CN104965365A - 液晶显示面板及其阵列基板 - Google Patents
液晶显示面板及其阵列基板 Download PDFInfo
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Abstract
本发明公开一种用于液晶显示面板的阵列基板,其包括:第一基板(101);在所述第一基板(101)之上的低温多晶硅薄膜晶体管;在所述低温多晶硅薄膜晶体管之上的彩色光阻层;以及在所述彩色光阻层之上的间隔保持体。本发明还公开一种液晶显示面板,其包括所述阵列基板及与所述阵列基板相对设置的第二基板(201)。本发明利用第二基板与低温多晶硅薄膜晶体管阵列基板对盒组装形成液晶显示面板,由于第二基板为裸基板(即无任何图形),所以其在与所述阵列基板对盒组装不存在对组精度的问题。这样,制作出的液晶显示面板的开口率不会存在偏差异的问题。
Description
技术领域
本发明属于液晶显示技术领域,具体地讲,涉及一种低温多晶硅(LowerTemperature Polycrystal Silicon,LTPS)薄膜晶体管(Thin Film Transistor,TFT)阵列基板及具有该阵列基板的液晶显示面板。
背景技术
随着光电与半导体技术的演进,也带动了平板显示器(Flat Panel Display)的蓬勃发展,而在诸多平板显示器中,液晶显示器(Liquid Crystal Display,简称LCD)因具有高空间利用效率、低消耗功率、无辐射以及低电磁干扰等诸多优越特性,已成为市场的主流。
目前,作为LCD的开关元件而广泛采用的是非晶硅薄膜三极管(a-Si TFT),但a-Si TFT LCD在满足薄型、轻量、高精细度、高亮度、高可靠性、低功耗等要求仍受到限制。低温多晶硅(Lower Temperature Polycrystal Silicon,LTPS)TFT LCD与a-Si TFT LCD相比,在满足上述要求方面,具有明显优势。
在现有的LTPS TFT LCD中,通常具有由彩色滤光片基板(简称CF基板)和阵列基板(简称Array基板)对盒形成的液晶显示面板。在液晶显示面板中,为了防止像素(Pixel)边缘漏光,通常利用CF基板上的黑色矩阵(简称BM)来遮挡像素边缘。同时,当光从CF基板一侧入射时,BM还能防止由于阵列基板(简称Array基板)上的源/漏极金属层反光而造成的液晶显示面板的对比度下降的问题。这样,在对盒CF基板和Array基板时,需要考虑BM和源/漏极金属层的对组精度。在目前的制程能力下,二者的对组无法做到完全无偏差,有时偏差会达到±5μm,这样制作出的液晶显示面板的开口率等就会存在极大的偏差异,影响液晶显示面板的品质。
发明内容
为了解决上述现有技术存在的问题,本发明的目的在于提供一种用于液晶显示面板的阵列基板,其包括:基板;在所述基板之上的低温多晶硅薄膜晶体管;在所述低温多晶硅薄膜晶体管之上的彩色光阻层;以及在所述彩色光阻层之上的间隔保持体。
进一步地,所述阵列基板还包括:在所述基板与所述低温多晶硅薄膜晶体管之间的遮光层;其中,所述遮光层与所述低温多晶硅薄膜晶体管相对设置。
进一步地,所述阵列基板还包括:在所述遮光层与所述低温多晶硅薄膜晶体管之间的第一绝缘层;其中,所述第一绝缘层覆盖所述遮光层。
进一步地,所述低温多晶硅薄膜晶体管包括:在所述第一绝缘层之上的多晶硅层;在所述第一绝缘层之上且覆盖所述多晶硅层的第二绝缘层;在所述第二绝缘层之上的栅极金属层;在所述第二绝缘层之上且覆盖所述栅极金属层的第三绝缘层;在所述第三绝缘层和所述第二绝缘层中的第一通孔和第二通孔;其中,所述第一通孔和所述第二通孔露出所述多晶硅层的表面;在所述第三绝缘层之上的源极金属层和漏极金属层;其中,所述源极金属层填充所述第一通孔并接触所述多晶硅层的表面,所述漏极金属层填充所述第二通孔并接触所述多晶硅层的表面;在所述第三绝缘层之上且覆盖所述源极金属层和所述漏极金属层的第一平坦层;在所述第一平坦层之上的公共电极层;在所述公共电极层之上的第一钝化层;在所述第一钝化层、所述公共电极层以及所述第一平坦层中的过孔;其中,所述过孔露出所述漏极金属层的表面;在所述第一钝化层之上的像素电极层;其中,所述像素电极层通过所述过孔接触所述漏极金属层的表面;覆盖所述像素电极层的第二钝化层。
进一步地,所述彩色光阻层包括:红色光阻层、绿色光阻层及蓝色光阻层;其中,所述红色光阻层、所述绿色光阻层及所述蓝色光阻层在所述第二钝化层之上。
进一步地,所述阵列基板还包括:在所述彩色光阻层之上的第二平坦层;其中,所述第二平坦层填充所述过孔。
进一步地,所述间隔保持体包括:主间隔保持体及副间隔保持体;其中,所述主间隔保持体和所述副间隔保持体均在所述第二平坦层之上。
本发明的另一目的还在于提供一种液晶显示面板,其包括上述的阵列基板及与所述阵列基板相对设置的第二基板。
进一步地,所述液晶显示面板还包括:在所述第二基板的背向所述阵列基板的表面之上的黑色遮光层;其中,所述黑色遮光层与所述低温多晶硅薄膜晶体管相对设置,并且所述黑色遮光层的遮光面积大于所述阵列基板的遮光层的遮光面积。
进一步地,所述液晶显示面板还包括:在所述第二基板的背向所述阵列基板的表面之上且覆盖所述黑色遮光层的第三钝化层。
本发明的有益效果:利用第二基板与低温多晶硅薄膜晶体管阵列基板对盒组装形成液晶显示面板,由于第二基板为裸基板(即无任何图形),所以其在与所述阵列基板对盒组装不存在对组精度的问题。这样,制作出的液晶显示面板的开口率不会存在偏差异的问题。
附图说明
通过结合附图进行的以下描述,本发明的实施例的上述和其它方面、特点和优点将变得更加清楚,附图中:
图1是根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板的结构示意图;
图2是根据本发明的实施例的液晶显示面板的结构示意图。
具体实施方式
以下,将参照附图来详细描述本发明的实施例。然而,可以以许多不同的形式来实施本发明,并且本发明不应该被解释为限制于这里阐述的具体实施例。相反,提供这些实施例是为了解释本发明的原理及其实际应用,从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中,为了清楚器件,夸大了层和区域的厚度,相同的标号在整个说明书和附图中可用来表示相同的元件。
将理解的是,尽管在这里可使用术语“第一”、“第二”、“第三”等来描述各种元件,但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。
也将理解的是,在一层或元件被称为在或形成在另一层或基板“之上”时,它可以直接在或形成在该另一层或基板上,或者也可以存在中间层。
图1是根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板的结构示意图。
参照图1,根据本发明的实施例的低温多晶硅薄膜晶体管阵列基板包括:第一基板101;在第一基板101之上的低温多晶硅(Lower Temperature PolycrystalSilicon,LTPS)薄膜晶体管(Thin Film Transistor,TFT);在低温多晶硅薄膜晶体管之上的彩色光阻层;以及在彩色光阻层116a、116b、116c之上的间隔保持体。在本实施例中,第一基板101可为透明的玻璃基板,但本发明并不限制于此,例如第一基板101也可为透明的树脂基板。
进一步地,为了防止低温多晶硅薄膜晶体管因光照而产生漏电流,所述阵列基板还包括:在第一基板101与低温多晶硅薄膜晶体管之间的遮光层102;其中,遮光层102与低温多晶硅薄膜晶体管相对设置,从而遮光层102对低温多晶硅薄膜晶体管的沟道进行遮光。进一步地,遮光层102与低温多晶硅薄膜晶体管正相对设置。也就是说,从下向上看,遮光层102完全遮挡低温多晶硅薄膜晶体管。
此外,所述阵列基板还包括:在第一基板101与低温多晶硅薄膜晶体管之间的第一绝缘层103;其中,第一绝缘层103覆盖遮光层102。也就是说,遮光层102直接形成在第一基板101上,第一绝缘层103直接形成在第一基板101上并覆盖遮光层102,而低温多晶硅薄膜晶体管直接形成在第一绝缘层103上。在本实施例中,第一绝缘层103由氮化硅和氧化硅形成,但本发明并不限制于此。
以下,将对根据本发明的实施例的低温多晶硅薄膜晶体管的构成进行详细描述。根据本发明的实施例的低温多晶硅薄膜晶体管包括:
在第一绝缘层103之上的多晶硅层104;其中,多晶硅层104用来形成载流子移动通道;
在第一绝缘层103之上且覆盖多晶硅层104的第二绝缘层105;其中,在本实施例中,第二绝缘层105由氮化硅和氧化硅形成,但本发明并不限制于此;
在第二绝缘层105之上的栅极金属层106;
在第二绝缘层105之上且覆盖栅极金属层106的第三绝缘层107;其中,在本实施例中,第三绝缘层107由氮化硅和氧化硅形成,但本发明并不限制于此;
在第三绝缘层107和第二绝缘层105中的第一通孔108a和第二通孔108b;其中,第一通孔108a和第二通孔108b露出多晶硅层104的表面;
在第三绝缘层107之上的源极金属层109a和漏极金属层109b;其中,源极金属层109a填充第一通孔108a并接触多晶硅层104的表面,漏极金属层109b填充第二通孔108b并接触多晶硅层104的表面;
在第三绝缘层107之上且覆盖源极金属层109a和漏极金属层109b的第一平坦层110;在本实施例中,第一平坦层110为有机平坦层,但本发明并不限制于此;
在第一平坦层110之上的公共电极层111;在本实施例中,公共电极层111由氧化铟锡ITO形成,但本发明并不限制于此;
在公共电极层111之上的第一钝化层112;
在第一钝化层112、公共电极层111以及第一平坦层110中的过孔113;其中,过孔113露出漏极金属层109b的表面;
在第一钝化层112之上的像素电极层114;其中,像素电极层114通过过孔113接触漏极金属层109b的表面;在本实施例中,像素电极层114由氧化铟锡ITO形成,但本发明并不限制于此;
覆盖像素电极层114的第二钝化层115。
此外,在本实施例中,所述彩色光阻层包括:红色光阻层116a、绿色光阻层116b及蓝色光阻层116c;其中,红色光阻层116a、绿色光阻层116b及蓝色光阻层116c直接形成在第二钝化层115之上。
另外,所述阵列基板还包括:在第二钝化层115之上并覆盖红色光阻层116a、绿色光阻层116b及蓝色光阻层116c的第二平坦层117;其中,第二平坦层117填充过孔113。在本实施例中,第二平坦层117为有机平坦层,但本发明并不限制于此。
进一步地,间隔保持体包括:主间隔保持体(Main Photo Spacer)118a及副间隔保持体(Sub Photo Spacer)118b;其中,主间隔保持体118a及副间隔保持体118b均在第二平坦层117之上。
图2是根据本发明的实施例的液晶显示面板的结构示意图。
参照图2,根据本发明的实施例的液晶显示面板包括:相对设置的图1所示的低温多晶硅薄膜晶体管阵列基板和第二基板201,以及夹设在所述阵列基板和第二基板201之间的液晶层300。
在本实施例中,第二基板201可为透明的玻璃基板,但本发明并不限制于此,例如,第二基板201也可为透明的树脂基板。
为了防止由第二基板201一侧入射的光线从低温多晶硅薄膜晶体管阵列基板的金属层(例如,源极金属层109a和漏极金属层109b)反射,从而造成液晶显示面板的对比度下降,在本实施例中,进一步地,在第二基板201的背向低温多晶硅薄膜晶体管阵列基板的表面(即第二基板201的上表面)上设置黑色遮光层202;其中,黑色遮光层202与低温多晶硅薄膜晶体管相对设置。进一步地黑色遮光层202与低温多晶硅薄膜晶体管正相对设置。
进一步地,黑色遮光层202的遮光面积大于遮光层102的遮光面积;也就是从,从上往下看,黑色遮光层202完全遮挡低温多晶硅薄膜晶体管和遮光层102。在本实施例中,黑色遮光层202可由铬形成,但本发明并不限制于此,例如,黑色遮光层202也可由其他黑色金属形成,或者黑色树脂形成。
此外,为了对黑色遮光层202进行保护,进一步地,在第二基板201的背向低温多晶硅薄膜晶体管阵列基板的表面(即第二基板201的上表面)上设置第三钝化层203;其中,第三钝化层203覆盖黑色遮光层202。
综上所述,根据本发明的实施例,在形成液晶显示面板时,利用第二基板与低温多晶硅薄膜晶体管阵列基板对盒组装,由于第二基板为裸基板(即无任何图形),所以其在与所述阵列基板对盒组装无需考虑对组精度。这样,制作出的液晶显示面板的开口率不会存在偏差异的问题。
虽然已经参照特定实施例示出并描述了本发明,但是本领域的技术人员将理解:在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下,可在此进行形式和细节上的各种变化。
Claims (10)
1.一种用于液晶显示面板的阵列基板,其特征在于,包括:
第一基板(101);
在所述第一基板(101)之上的低温多晶硅薄膜晶体管;
在所述低温多晶硅薄膜晶体管之上的彩色光阻层;以及
在所述彩色光阻层之上的间隔保持体。
2.根据权利要求1所述的阵列基板,其特征在于,所述阵列基板还包括:在所述第一基板(101)与所述低温多晶硅薄膜晶体管之间的遮光层(102);其中,所述遮光层(102)与所述低温多晶硅薄膜晶体管相对设置。
3.根据权利要求2所述的阵列基板,其特征在于,所述阵列基板还包括:在所述遮光层(102)与所述低温多晶硅薄膜晶体管之间的第一绝缘层(103);其中,所述第一绝缘层(103)覆盖所述遮光层(102)。
4.根据权利要求3所述的阵列基板,其特征在于,所述低温多晶硅薄膜晶体管包括:
在所述第一绝缘层(103)之上的多晶硅层(104);
在所述第一绝缘层(103)之上且覆盖所述多晶硅层(104)的第二绝缘层(105);
在所述第二绝缘层(105)之上的栅极金属层(106);
在所述第二绝缘层(105)之上且覆盖所述栅极金属层(106)的第三绝缘层(107);
在所述第三绝缘层(107)和所述第二绝缘层(105)中的第一通孔(108a)和第二通孔(108b);其中,所述第一通孔(108a)和所述第二通孔(108b)露出所述多晶硅层(104)的表面;
在所述第三绝缘层(107)之上的源极金属层(109a)和漏极金属层(109b);其中,所述源极金属层(109a)填充所述第一通孔(108a)并接触所述多晶硅层(104)的表面,所述漏极金属层(109b)填充所述第二通孔(108b)并接触所述多晶硅层(104)的表面;
在所述第三绝缘层(107)之上且覆盖所述源极金属层(109a)和所述漏极金属层(109b)的第一平坦层(110);
在所述第一平坦层(110)之上的公共电极层(111);
在所述公共电极层(111)之上的第一钝化层(112);
在所述第一钝化层(112)、所述公共电极层(111)以及所述第一平坦层(110)中的过孔(113);其中,所述过孔(113)露出所述漏极金属层(109b)的表面;
在所述第一钝化层(112)之上的像素电极层(114);其中,所述像素电极层(114)通过所述过孔(113)接触所述漏极金属层(109b)的表面;以及
覆盖所述像素电极层(114)的第二钝化层(115)。
5.根据权利要求4所述的阵列基板,其特征在于,所述彩色光阻层包括:红色光阻层(116a)、绿色光阻层(116b)及蓝色光阻层(116c);其中,所述红色光阻层(116a)、所述绿色光阻层(116b)及所述蓝色光阻层(116c)在所述第二钝化层(115)之上。
6.根据权利要求5所述的阵列基板,其特征在于,所述阵列基板还包括:在所述彩色光阻层之上的第二平坦层(117);其中,所述第二平坦层(117)填充所述过孔(113)。
7.根据权利要求6所述的阵列基板,其特征在于,所述间隔保持体包括:主间隔保持体(118a)及副间隔保持体(118b);其中,所述主间隔保持体(118a)和所述副间隔保持体(118b)均在所述第二平坦层(117)之上。
8.一种液晶显示面板,其特征在于,包括权利要求1至7任一项所述的阵列基板及与所述阵列基板相对设置的第二基板(201)。
9.根据权利要求8所述的液晶显示面板,其特征在于,所述液晶显示面板还包括:在所述第二基板(201)的背向所述阵列基板的表面之上的黑色遮光层(202);其中,所述黑色遮光层(202)与所述低温多晶硅薄膜晶体管相对设置,并且所述黑色遮光层(202)的遮光面积大于所述阵列基板的遮光层(102)的遮光面积。
10.根据权利要求9所述的液晶显示面板,其特征在于,所述液晶显示面板还包括:在所述第二基板(201)的背向所述阵列基板的表面之上且覆盖所述黑色遮光层(202)的第三钝化层(203)。
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US11294249B2 (en) | 2019-08-27 | 2022-04-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Liquid crystal display panel and manufacturing method |
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US20170168347A1 (en) | 2017-06-15 |
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