CN104360557B - 阵列基板及其制造方法，以及显示装置 - Google Patents

阵列基板及其制造方法，以及显示装置 Download PDF

Info

Publication number
CN104360557B
CN104360557B CN201410697709.1A CN201410697709A CN104360557B CN 104360557 B CN104360557 B CN 104360557B CN 201410697709 A CN201410697709 A CN 201410697709A CN 104360557 B CN104360557 B CN 104360557B
Authority
CN
China
Prior art keywords
hole
conductive layer
layer
array base
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410697709.1A
Other languages
English (en)
Other versions
CN104360557A (zh
Inventor
舒适
张锋
谷耀辉
贺芳
谷丰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201410697709.1A priority Critical patent/CN104360557B/zh
Priority to US14/574,721 priority patent/US9437487B2/en
Publication of CN104360557A publication Critical patent/CN104360557A/zh
Priority to US15/233,255 priority patent/US9673231B2/en
Application granted granted Critical
Publication of CN104360557B publication Critical patent/CN104360557B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133345—Insulating layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Geometry (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明的实施例提供阵列基板及其制造方法，以及显示装置。该阵列基板的制造方法，包括：形成薄膜晶体管；形成覆盖所述薄膜晶体管的钝化层，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；形成过孔导电层，该过孔导电层覆盖所述漏极于所述过孔处露出的部分并连接所述漏极；对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率；以及形成像素电极，该像素电极通过所述过孔导电层连接所述漏极。

Description

阵列基板及其制造方法，以及显示装置
技术领域
本发明的实施例涉及阵列基板及其制造方法，以及显示装置。
背景技术
薄膜晶体管液晶显示装置主要包括阵列基板、彩膜基板以及夹置在阵列基板和彩膜基板之间的液晶层。阵列基板包括栅线、数据线以及由栅线和数据线彼此交叉而限定的多个像素区域。在每个像素区域内形成有薄膜晶体管和像素电极。像素电极经由于覆盖薄膜晶体管的钝化层中形成的过孔而与薄膜晶体管的漏极连接。彩膜基板上形成有红、绿、蓝(R、G、B)三种彩膜组成的彩膜层和黑矩阵。黑矩阵与薄膜晶体管对应设置，防止漏光。
在实际工艺中，阵列基板和彩膜基板对盒时往往会存在偏差，因此需要增大黑矩阵的宽度，以避免对盒偏差造成漏光。然而，增大黑矩阵的宽度会降低像素区域的开口率，影响显示效果。为了解决上述问题，将彩膜层及黑矩阵直接形成在阵列基板上的COA(Colorfilter On Array)技术应用而生。在COA技术中，彩膜层和黑矩阵与薄膜晶体管一起形成在阵列基板上，如此不仅可以提升显示装置的开口率，增加显示装置的亮度，而且避免了将彩膜层和薄膜晶体管形成在不同基板上所衍生的各种问题。
然而，在COA技术中，黑矩阵形成在阵列基板上，此时尽管黑矩阵可以遮挡薄膜晶体管及大面积的金属线(例如，栅线、数据线)，然而由于位于钝化层过孔处的漏极需要与像素电极连接，因此位于过孔处的漏极是不能被黑矩阵遮挡的。在此情形下，过孔处的漏极将反射环境光，造成显示装置的对比度和色纯度下降，从而严重影响显示装置的显示效果。
发明内容
根据本发明的实施例，提供一种阵列基板的制造方法。例如，该阵列基板的制造方法可以包括：形成薄膜晶体管；形成覆盖所述薄膜晶体管的钝化层，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；形成过孔导电层，该过孔导电层覆盖所述漏极于所述过孔处露出的部分并连接所述漏极；对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率；以及形成像素电极，该像素电极通过所述过孔导电层连接所述漏极。
例如，所述方法还可以包括：形成公共电极。所述过孔导电层与所述公共电极同时形成，并且所述过孔导电层与所述公共电极彼此断开。
例如，所述方法还可以包括：在所述过孔导电层和所述公共电极上形成电极间绝缘层；对所述电极间绝缘层进行构图工艺，以露出所述过孔导电层；以及对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率。
例如，所述方法还可以包括：在所述电极间绝缘层上形成所述像素电极。
例如，所述过孔导电层可以与所述像素电极一体形成。
例如，所述方法还可以包括：形成像素电极层；在像素电极层上涂覆光刻胶，采用双色调掩模板对光刻胶进行曝光、显影，以形成光刻胶完全保留区域、光刻胶部分保留区域和光刻胶完全去除区域，该光刻胶完全保留区域对应于要形成所述像素电极的区域，该光刻胶部分保留区域对应于要形成所述过孔导电层的区域，该光刻胶完全去除区域对应于其他区域；蚀刻去除光刻胶完全去除区域的像素电极层；灰化去除光刻胶部分保留区域的光刻胶，以形成所述过孔导电层；以剩余的光刻胶作为掩模，对所述过孔导电层进行处理以使过孔导电层的反射率低于漏极的反射率；以及去除剩余的光刻胶，得到像素电极。
例如，所述方法还可以包括：形成像素电极层；采用第一单色调掩模板对所述像素电极层进行构图工艺以形成所述像素电极和过孔导电层；以及采用第二单色调掩模板对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率。
例如，对所述过孔导电层进行处理可以包括：对所述过孔导电层进行氢化处理。
例如，所述氢化处理可以采用氢等离子体。
例如，所述方法还可以包括：形成黑矩阵和彩膜层，其中所述黑矩阵形成为对应于所述薄膜晶体管，并且所述彩膜层形成为对应于所述像素电极。
例如，所述方法还可以包括：形成有机绝缘层，其中所述有机绝缘层形成为位于所述像素电极所在层与所述漏极所在的层之间。
例如，所述方法还可以包括：形成隔垫物，其中所述隔垫物位于所述阵列基板的最上层。
根据本发明的实施例，提供一种阵列基板。例如，该阵列基板可以包括：薄膜晶体管；钝化层，覆盖所述薄膜晶体管，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；过孔导电层，覆盖所述漏极于所述过孔处露出的部分并连接所述漏极，并且所述过孔导电层的反射率低于所述漏极的反射率；以及像素电极，该像素电极通过所述过孔导电层连接所述漏极。
例如，所述阵列基板还可以包括公共电极。所述过孔导电层与所述公共电极同层设置，并且所述过孔导电层与所述公共电极彼此断开。
例如，所述过孔导电层与所述像素电极同层设置，并且所述过孔导电层与所述像素电极彼此连接。
例如，所述阵列基板还可以包括黑矩阵和彩膜层，其中所述黑矩阵对应于所述薄膜晶体管，并且所述彩膜层对应于所述像素电极。
例如，所述阵列基板还可以包括有机绝缘层，其中所述有机绝缘层位于所述像素电极所在层与所述漏极所在的层之间。
例如，所述阵列基板还可以包括隔垫物，其中所述隔垫物位于所述阵列基板的最上层。
根据本发明的实施例，提供一种显示装置。例如，该显示装置可以包括如上所述的阵列基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1是示出在根据本发明实施例的阵列基板的制造方法中形成薄膜晶体管的示意图；
图2是示出在根据本发明实施例的阵列基板的制造方法中形成钝化层及过孔的示意图；
图3是示出在根据本发明实施例的阵列基板的制造方法中形成黑矩阵的示意图；
图4是示出在根据本发明实施例的阵列基板的制造方法中形成彩膜层的示意图；
图5是示出在根据本发明实施例的阵列基板的制造方法中形成公共电极和过孔导电层的示意图；
图6是示出在根据本发明实施例的阵列基板的制造方法中形成电极间绝缘层的示意图；
图7是示出在根据本发明实施例的阵列基板的制造方法中对过孔导电层进行处理以降低其反射率的示意图；
图8是示出在根据本发明实施例的阵列基板的制造方法中形成像素电极的示意图；
图9是示出在根据本发明实施例的阵列基板的制造方法中形成隔垫物的示意图；
图10示出在根据本发明实施例的阵列基板的制造方法中形成有机绝缘层的示意图；以及
图11是示出在根据本发明实施例的阵列基板的制造方法中形成像素电极和过孔导电层的示意图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另作定义，此处使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本发明专利申请说明书以及权利要求书中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现在“包括”或者“包含”前面的元件或者物件涵盖出现在“包括”或者“包含”后面列举的元件或者物件及其等同，并不排除其他元件或者物件。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
根据本发明的实施例，提供一种阵列基板的制造方法。该阵列基板的制造方法包括：形成薄膜晶体管；形成覆盖所述薄膜晶体管的钝化层，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；形成过孔导电层，该过孔导电层覆盖所述漏极于所述过孔处露出的部分并连接所述漏极；对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率；以及形成像素电极，该像素电极通过所述过孔导电层连接所述漏极。
在根据本发明实施例的阵列基板的制造方法中，由于过孔导电层覆盖漏极于钝化层过孔处露出的部分且经处理后的过孔导电层的反射率低于漏极的反射率，因此能够避免漏极反光并能够提高显示装置的显示质量。
在根据本发明实施例的阵列基板的制造方法中，可以采用单独的工艺形成过孔导电层并采用单独的工艺对过孔导电层进行处理以降低其反射率。然而，为了简化制造工艺并降低制造成本，希望形成过孔导电层的步骤及对过孔导电层进行处理以降低其反射率的步骤能与形成阵列基板的其他部件的步骤同时进行。例如，一种情形下：过孔导电层与公共电极同时形成；以及另一种情形下：过孔导电层与像素电极同时形成。下面，作为示例，将结合附图对上述两种情形下的阵列基板的制造方法进行详细的描述。
[过孔导电层与公共电极同时形成]
图1至图10是示出根据本发明实施例的阵列基板的制造方法的示意图。如图1至图10所示，根据本发明实施例的阵列基板的制造方法包括以下步骤。
首先，在基底基板1上形成薄膜晶体管，如图1所示。薄膜晶体管可以是底栅型或顶栅型。作为示例，图中示出了底栅型的薄膜晶体管。
薄膜晶体管包括栅极2、栅绝缘层5、有源层6、源极7和漏极8。在形成栅极2的同时，还可以形成栅线(未示出)、公共电极线3和接口区焊垫4。在形成源极7和漏极8的同时还可以形成数据线(未示出)。所述栅线和数据线彼此交叉以限定矩阵形式的多个像素单元。在图中，作为示例，仅示出了一个像素单元，但是其他像素单元可以相似地形成。
接着，形成钝化层9，并对钝化层9进行构图工艺以在钝化层9中形成过孔10，如图2所示。过孔10位于薄膜晶体管的漏极8处，以露出漏极8的至少一部分。在形成过孔10的同时，还可以形成附加过孔10’。附加过孔10’位于公共电极线3处并延伸穿过栅绝缘层5以露出公共电极线3的一部分。
接着，形成黑矩阵11和彩膜层12，如图3和图4所示。黑矩阵11形成为对应于薄膜晶体管，彩膜层12形成为对应于像素电极。
例如，阵列基板包括红色像素单元、绿色像素单元和蓝色像素单元，相应地，彩膜层12包括位于红色像素单元中的红色彩膜、位于绿色像素单元中的绿色彩膜和位于蓝色像素单元中的蓝色彩膜。红色彩膜、绿色彩膜和蓝色彩膜分别通过不同的构图工艺形成。
接着，形成公共电极13和过孔导电层14，如图5所示。具体而言，首先沉积一层公共电极层，然后对公共电极层进行构图工艺以同时形成公共电极13和过孔导电层14。公共电极13和过孔导电层14彼此断开。公共电极13经由附加过孔10’连接到公共电极线3。过孔导电层14位于过孔10处。更进一步地，过孔导电层14覆盖漏极8于过孔10处露出的部分并连接漏极8。例如，公共电极13和过孔导电层14由ITO(Indium Tin Oxide)、IZO(Indium ZincOxide)、氧化锡等透明导电氧化物形成。
接着，形成电极间绝缘层15并对电极间绝缘层15进行构图工艺以露出过孔导电层14，如图6所示。电极间绝缘层15覆盖整个基板而仅露出过孔导电层14。
接着，对露出的过孔导电层14进行处理，以使其反射率降低，如图7所示。例如，所述处理为氢化处理，并且进一步地，该氢化处理采用氢等离子体。例如，在40-200mtorr的压强下对过孔导电层14进行10-300秒的氢化处理。更进一步地，例如，在60mtorr的压强下对过孔导电层14进行60秒的氢化处理。如上所述过孔导电层可以由ITO形成，ITO通常包含90％的In2O3和10％的SnO2，当进行氢化处理时，氢可以将SnO2中的Sn还原，被还原的Sn从ITO的表面析出形成雾状的黑点，从而可使得过孔导电层14的反射率显著降低并低于由金属形成的漏极8的反射率。由于过孔导电层14覆盖漏极8于过孔10处露出的部分并且经处理后的过孔导电层14的反射率低于漏极8的反射率，因此能够避免漏极8反射环境光的情形，从而提高显示装置的显示效果。
另外，在上述对露出的过孔导电层14进行处理以降低其反射率的步骤中，电极间绝缘层15可以保护整个基板不受影响，所以在该步骤中不需要设置专门的掩模板来保护基板，从而进一步简化了制造工艺并降低了制造成本。
最后，形成像素电极16，如图8所示。例如，像素电极16由ITO(Indium Tin Oxide)、IZO(Indium Zinc Oxide)、氧化锡等透明导电氧化物形成，并且像素电极16为具有多个狭缝的狭缝电极。像素电极16通过过孔导电层14与薄膜晶体管的漏极8连接。
[过孔导电层与像素电极同时形成]
下面，将参照图11对过孔导电层与像素电极同时形成的情形进行描述。在下面的描述中，将仅描述与过孔导电层和公共电极同时形成的情形不同的特征，而相同的特征将不再重复描述。
在根据本发明实施例的阵列基板的制造方法中，过孔导电层14和像素电极16可以同时形成并相互连接。如图11所示，过孔导电层14和像素电极16可以一体形成。
例如，在形成过孔导电层14和像素电极16并对过孔导电层14进行处理以降低其反射率的过程中，可以采用双色调掩模板(诸如，灰色调掩模板和半色调掩模板)。首先，形成像素电极层；然后在像素电极层上涂覆光刻胶，采用双色调掩模板对光刻胶进行曝光、显影，以形成光刻胶完全保留区域、光刻胶部分保留区域和光刻胶完全去除区域，该光刻胶完全保留区域对应于要形成像素电极的区域，该光刻胶部分保留区域对应于要形成过孔导电层的区域，该光刻胶完全去除区域对应于其他区域；蚀刻去除光刻胶完全去除区域的像素电极层；灰化去除光刻胶部分保留区域的光刻胶，以形成过孔导电层；以剩余的光刻胶作为掩模，对所述过孔导电层进行处理以使过孔导电层的反射率低于漏极的反射率；以及去除剩余的光刻胶，得到像素电极。由于在形成过孔导电层14和像素电极16并对过孔导电层14进行处理以降低其反射率的过程中仅采用了一块双色调掩模板，因此可以进一步简化制造工艺并降低制造成本。
例如，像素电极16和过孔导电层14由ITO(Indium Tin Oxide)、IZO(Indium ZincOxide)、氧化锡等透明导电氧化物形成。
例如，所述处理为氢化处理，并且进一步地，该氢化处理采用氢等离子体。例如，在40-200mtorr的压强下对过孔导电层14进行10-300秒的氢化处理。更进一步地，例如，在60mtorr的压强下对过孔导电层14进行60秒的氢化处理。如上所述过孔导电层可以由ITO形成，ITO通常包含90％的In2O3和10％的SnO2，当进行氢化处理时，氢可以将SnO2中的Sn还原，被还原的Sn从ITO的表面析出形成雾状的黑点，从而可使得过孔导电层14的反射率显著降低并低于由金属形成的漏极8的反射率。由于过孔导电层14覆盖漏极8于过孔10处露出的部分并且经处理后的过孔导电层14的反射率低于漏极8的反射率，因此能够避免漏极8反射环境光的情形，从而提高显示装置的显示效果。
当然，在形成过孔导电层14和像素电极16并对过孔导电层14进行处理以降低其反射率的过程中，也可以采用两次单色调掩模板。首先，形成像素电极层；然后采用第一单色调掩模板对像素电极层进行构图工艺以得到一体形成的像素电极和过孔导电层；最后再采用第二单色调掩模板对过孔导电层14进行处理，以使其反射率低于漏极的反射率。
例如，采用第二单色调掩模板对过孔导电层14进行处理以使其反射率低于漏极的反射率可以包括：涂覆光刻胶，以覆盖整个基板；采用所述第二单色调掩模板对所述光刻胶进行曝光、显影，以形成光刻胶完全去除区域和光刻胶完全保留区域，该光刻胶完全去除区域对应于所述过孔导电层，该光刻胶完全保留区域对应于其他区域；对光刻胶完全去除区域的过孔导电层进行处理，以使其反射率低于漏极的反射率；以及去除光刻胶完全保留区域的光刻胶。
需要说明的是，尽管图11中示出的是ADS模式的显示装置的阵列基板，但是上面描述的过孔导电层与像素电极同时形成的技术方案也同样适用于VA模式、IPS模式等的显示装置的阵列基板。
需要说明的是，在根据本发明实施例的阵列基板的制造方法中，除了上述步骤之外，还可以形成隔垫物17，如图9所示。在将阵列基板与对向基板对盒之后，隔垫物17用于维持阵列基板和对向基板之间的盒厚。例如，隔垫物17位于阵列基板的最上层。
需要说明的是，在根据本发明实施例的阵列基板的制造方法中，除了上述步骤之外，还可以形成有机绝缘层18，如图10所示。该有机绝缘层18位于像素电极16所在层与漏极8所在的层之间，以降低像素电极16与漏极8所在的层之间的寄生电容，例如像素电极16与数据线之间的寄生电容Cpd。例如，该有机绝缘层18由聚酰亚胺、环氧树脂等形成。
需要说明的是，在根据本发明实施例的阵列基板的制造方法中，基底基板1、栅极2、栅绝缘层5、有源层6、源极7和漏极8、钝化层9、黑矩阵11、彩膜层12、电极间绝缘层15以及隔垫物17可以由本领域已知的材料和工艺形成，在此不再赘述。
根据本发明的实施例，还提供一种阵列基板。该阵列基板包括：薄膜晶体管；钝化层，覆盖所述薄膜晶体管，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；过孔导电层，覆盖所述漏极于所述过孔处露出的部分并连接所述漏极，并且所述过孔导电层的反射率低于所述漏极的反射率；以及像素电极，该像素电极通过所述过孔导电层连接所述漏极。
在根据本发明实施例的阵列基板中，由于过孔导电层覆盖漏极于钝化层过孔处露出的部分且过孔导电层的反射率低于漏极的反射率，因此能够避免漏极反光并能够提高显示装置的显示质量。
根据本发明的实施例，还提供一种显示装置，其包括上述任一实施例的阵列基板。该显示装置包括阵列基板与对向基板，该阵列基板与对向基板彼此对置以形成液晶盒，在液晶盒中填充有液晶材料。该对向基板例如为彩膜基板。在一些示例中，该液晶显示装置还包括为阵列基板提供背光的背光源。所述液晶显示装置例如可以实现为：液晶面板、电子纸、有机发光二极管(OLED)面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪、手表等任何具有显示功能的产品或部件。
由于根据本发明实施例的阵列基板包括如上所述的阵列基板，因此能够避免漏极反光并能够提高显示装置的显示质量。
以上所述仅是本发明的示范性实施例，而非用于限制本发明的保护范围，本发明的保护范围由权利要求确定。

Claims (19)

1.一种阵列基板的制造方法，该阵列基板包括栅线、数据线以及栅线和数据线彼此交叉所限定的像素单元，
其中，所述方法包括：
形成薄膜晶体管；
形成覆盖所述薄膜晶体管的钝化层，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；
形成过孔导电层，该过孔导电层覆盖所述漏极于所述过孔处露出的部分并连接所述漏极；
对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率；以及
形成像素电极，该像素电极通过所述过孔导电层连接所述漏极，
其中所述过孔导电层设置在所述过孔处且不延伸进入所述像素单元的显示区域。
2.根据权利要求1所述的阵列基板的制造方法，还包括：形成公共电极，其中所述过孔导电层与所述公共电极同时形成，并且所述过孔导电层与所述公共电极彼此断开。
3.根据权利要求2所述的阵列基板的制造方法，还包括：
在所述过孔导电层和所述公共电极上形成电极间绝缘层；
对所述电极间绝缘层进行构图工艺，以露出所述过孔导电层；以及
对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率。
4.根据权利要求3所述的阵列基板的制造方法，还包括：在所述电极间绝缘层上形成所述像素电极。
5.根据权利要求1所述的阵列基板的制造方法，其中所述过孔导电层与所述像素电极一体形成。
6.根据权利要求5所述的阵列基板的制造方法，还包括：
形成像素电极层；
在像素电极层上涂覆光刻胶，采用双色调掩模板对光刻胶进行曝光、显影，以形成光刻胶完全保留区域、光刻胶部分保留区域和光刻胶完全去除区域，该光刻胶完全保留区域对应于要形成所述像素电极的区域，该光刻胶部分保留区域对应于要形成所述过孔导电层的区域，该光刻胶完全去除区域对应于其他区域；
蚀刻去除光刻胶完全去除区域的像素电极层；
灰化去除光刻胶部分保留区域的光刻胶，以形成所述过孔导电层；
以剩余的光刻胶作为掩模，对所述过孔导电层进行处理以使过孔导电层的反射率低于漏极的反射率；以及
去除剩余的光刻胶，得到像素电极。
7.根据权利要求5所述的阵列基板的制造方法，还包括：
形成像素电极层；
采用第一单色调掩模板对所述像素电极层进行构图工艺以形成所述像素电极和过孔导电层；以及
采用第二单色调掩模板对所述过孔导电层进行处理，以使所述过孔导电层的反射率低于所述漏极的反射率。
8.根据权利要求1-7任一项所述的阵列基板的制造方法，其中对所述过孔导电层进行处理包括：对所述过孔导电层进行氢化处理。
9.根据权利要求8所述的阵列基板的制造方法，其中所述氢化处理采用氢等离子体。
10.根据权利要求1-7任一项所述的阵列基板的制造方法，还包括：形成黑矩阵和彩膜层，其中所述黑矩阵形成为对应于所述薄膜晶体管，并且所述彩膜层形成为对应于所述像素电极。
11.根据权利要求1-7任一项所述的阵列基板的制造方法，还包括：形成有机绝缘层，其中所述有机绝缘层形成为位于所述像素电极所在层与所述漏极所在的层之间。
12.根据权利要求1-7任一项所述的阵列基板的制造方法，还包括：形成隔垫物，其中所述隔垫物位于所述阵列基板的最上层。
13.一种阵列基板，包括：
薄膜晶体管；
钝化层，覆盖所述薄膜晶体管，该钝化层具有过孔并且该过孔露出所述薄膜晶体管的漏极的至少一部分；
过孔导电层，覆盖所述漏极于所述过孔处露出的部分并连接所述漏极，并且所述过孔导电层的反射率低于所述漏极的反射率；以及
像素电极，该像素电极通过所述过孔导电层连接所述漏极，
其中所述阵列基板还包括栅线、数据线以及栅线和数据线彼此交叉所限定的像素单元，并且
其中所述过孔导电层设置在所述过孔处且不延伸进入所述像素单元的显示区域。
14.根据权利要求13所述的阵列基板，还包括公共电极，其中所述过孔导电层与所述公共电极同层设置，并且所述过孔导电层与所述公共电极彼此断开。
15.根据权利要求13所述的阵列基板，其中所述过孔导电层与所述像素电极同层设置，并且所述过孔导电层与所述像素电极彼此连接。
16.根据权利要求13-15任一项所述的阵列基板，还包括黑矩阵和彩膜层，其中所述黑矩阵对应于所述薄膜晶体管，并且所述彩膜层对应于所述像素电极。
17.根据权利要求13-15任一项所述的阵列基板，还包括有机绝缘层，其中所述有机绝缘层位于所述像素电极所在层与所述漏极所在的层之间。
18.根据权利要求13-15任一项所述的阵列基板，还包括隔垫物，其中所述隔垫物位于所述阵列基板的最上层。
19.一种显示装置，包括如权利要求13所述的阵列基板。
CN201410697709.1A 2014-11-26 2014-11-26 阵列基板及其制造方法，以及显示装置 Active CN104360557B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201410697709.1A CN104360557B (zh) 2014-11-26 2014-11-26 阵列基板及其制造方法，以及显示装置
US14/574,721 US9437487B2 (en) 2014-11-26 2014-12-18 Array substrate and fabrication method thereof, and display device
US15/233,255 US9673231B2 (en) 2014-11-26 2016-08-10 Array substrate having via-hole conductive layer and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410697709.1A CN104360557B (zh) 2014-11-26 2014-11-26 阵列基板及其制造方法，以及显示装置

Publications (2)

Publication Number Publication Date
CN104360557A CN104360557A (zh) 2015-02-18
CN104360557B true CN104360557B (zh) 2017-04-26

Family

ID=52527833

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410697709.1A Active CN104360557B (zh) 2014-11-26 2014-11-26 阵列基板及其制造方法，以及显示装置

Country Status (2)

Country Link
US (2) US9437487B2 (zh)
CN (1) CN104360557B (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160148765A (ko) * 2015-06-16 2016-12-27 삼성디스플레이 주식회사 표시 장치
KR102401621B1 (ko) * 2015-07-23 2022-05-25 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
CN105185787B (zh) * 2015-08-26 2018-08-14 深圳市华星光电技术有限公司 制作阵列基板的方法、阵列基板以及液晶显示面板
CN105116655B (zh) * 2015-09-22 2017-04-12 深圳市华星光电技术有限公司 液晶显示面板、阵列基板及其制造方法
CN105204254B (zh) * 2015-10-09 2019-01-04 深圳市华星光电技术有限公司 一种tft阵列基板、显示面板及其制作方法
CN105304648A (zh) * 2015-10-23 2016-02-03 京东方科技集团股份有限公司 一种阵列基板及其制作方法、显示装置
CN105278193B (zh) * 2015-11-19 2018-09-18 深圳市华星光电技术有限公司 阵列基板及其制造方法、液晶显示面板
CN105428313A (zh) * 2016-01-05 2016-03-23 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
CN105511173A (zh) * 2016-01-05 2016-04-20 京东方科技集团股份有限公司 显示基板及其制作方法、显示面板及其制作方法
CN105679768B (zh) * 2016-01-25 2019-07-12 武汉华星光电技术有限公司 阵列基板、液晶显示面板及液晶显示装置
CN105742293A (zh) * 2016-03-01 2016-07-06 京东方科技集团股份有限公司 一种阵列基板及其制作方法
CN108666218A (zh) * 2017-03-29 2018-10-16 京东方科技集团股份有限公司 薄膜晶体管和显示基板及其制作方法、显示装置
CN208848008U (zh) 2018-10-29 2019-05-10 惠科股份有限公司 基板及显示面板
CN111694464B (zh) * 2020-06-19 2024-04-19 京东方科技集团股份有限公司 阵列基板及其制备方法、显示装置
KR20220060019A (ko) 2020-11-02 2022-05-11 삼성디스플레이 주식회사 디스플레이 장치 및 그 제조 방법
CN115113445A (zh) * 2021-03-19 2022-09-27 京东方科技集团股份有限公司 阵列基板与显示装置
CN113671758A (zh) * 2021-08-09 2021-11-19 Tcl华星光电技术有限公司 显示面板及显示面板制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451269B (en) * 1999-04-20 2001-08-21 Semiconductor Energy Lab Semiconductor device and the fabricating method therefor
CN1429056A (zh) * 2001-12-26 2003-07-09 三星Sdi株式会社 带有黑矩阵的平板显示装置及其制造方法
CN102116984A (zh) * 2009-12-31 2011-07-06 乐金显示有限公司 液晶显示设备及其制造方法
CN103283029A (zh) * 2010-12-27 2013-09-04 夏普株式会社 半导体装置及其制造方法
CN204188927U (zh) * 2014-11-26 2015-03-04 京东方科技集团股份有限公司 阵列基板以及显示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100900404B1 (ko) * 2003-12-22 2009-06-02 엘지디스플레이 주식회사 액정표시소자의 제조 방법
US8144146B2 (en) * 2004-05-21 2012-03-27 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
TWM451269U (zh) * 2012-11-01 2013-04-21 Long-An Qiu 汽機車電量指示及ｕｓｂ供電裝置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW451269B (en) * 1999-04-20 2001-08-21 Semiconductor Energy Lab Semiconductor device and the fabricating method therefor
CN1429056A (zh) * 2001-12-26 2003-07-09 三星Sdi株式会社 带有黑矩阵的平板显示装置及其制造方法
CN102116984A (zh) * 2009-12-31 2011-07-06 乐金显示有限公司 液晶显示设备及其制造方法
CN103283029A (zh) * 2010-12-27 2013-09-04 夏普株式会社 半导体装置及其制造方法
CN204188927U (zh) * 2014-11-26 2015-03-04 京东方科技集团股份有限公司 阵列基板以及显示装置

Also Published As

Publication number Publication date
US9673231B2 (en) 2017-06-06
US20160351588A1 (en) 2016-12-01
US20160148838A1 (en) 2016-05-26
CN104360557A (zh) 2015-02-18
US9437487B2 (en) 2016-09-06

Similar Documents

Publication Publication Date Title
CN104360557B (zh) 阵列基板及其制造方法，以及显示装置
KR101327847B1 (ko) 액정표시장치와 그 제조방법
US7817227B2 (en) Array substrate, display panel having the same and method of manufacturing the same
US11923397B2 (en) Micro light emitting diode display substrate and manufacturing method thereof
US8030103B2 (en) Liquid crystal display panel and method of manufacturing the same
KR101749757B1 (ko) 고 투과 수평 전계형 액정표시장치 및 그 제조 방법
US20140131715A1 (en) Array substrate, method for fabricating the same, and display device
US9543324B2 (en) Array substrate, display device and manufacturing method of the array substrate
CN107479277A (zh) 显示装置及其显示衬底
CN104716196B (zh) 薄膜晶体管及其制作方法、阵列基板及显示装置
CN104298040A (zh) 一种coa基板及其制作方法和显示装置
CN104035250B (zh) 主动元件阵列基板
KR20160053261A (ko) 박막 트랜지스터 기판 및 이의 제조 방법
EP3185287B1 (en) Array substrate and manufacturing method thereof, and display device
US7894010B2 (en) Liquid crystal display panel and method for fabricating the same
CN106353944A (zh) 阵列基板及其制造方法、显示面板、显示装置
CN104133313A (zh) 阵列基板及其制备方法、液晶显示装置
KR20070041877A (ko) 액정표시장치용 어레이 기판 및 그 제조 방법
KR102484136B1 (ko) 표시 기판, 이를 포함하는 액정 표시 장치, 및 이의 제조 방법
CN104658981B (zh) 阵列基板及其制作方法、显示装置
CN108346622A (zh) 阵列基板及其制备方法、显示面板
CN204188927U (zh) 阵列基板以及显示装置
CN204116761U (zh) 一种coa基板和显示装置
KR101978789B1 (ko) 표시장치용 어레이 기판 및 그의 제조 방법
KR20160044168A (ko) 표시 기판 및 이의 제조 방법

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant