JP2016510357A - ジルコニアおよび金属酸化剤を含む化学機械研磨組成物 - Google Patents
ジルコニアおよび金属酸化剤を含む化学機械研磨組成物 Download PDFInfo
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- JP2016510357A JP2016510357A JP2015556063A JP2015556063A JP2016510357A JP 2016510357 A JP2016510357 A JP 2016510357A JP 2015556063 A JP2015556063 A JP 2015556063A JP 2015556063 A JP2015556063 A JP 2015556063A JP 2016510357 A JP2016510357 A JP 2016510357A
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- VTIIJXUACCWYHX-UHFFFAOYSA-L disodium;carboxylatooxy carbonate Chemical compound [Na+].[Na+].[O-]C(=O)OOC([O-])=O VTIIJXUACCWYHX-UHFFFAOYSA-L 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 229940116333 ethyl lactate Drugs 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- RBNPOMFGQQGHHO-UHFFFAOYSA-N glyceric acid Chemical compound OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- PEYVWSJAZONVQK-UHFFFAOYSA-N hydroperoxy(oxo)borane Chemical compound OOB=O PEYVWSJAZONVQK-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004310 lactic acid Substances 0.000 description 1
- 235000014655 lactic acid Nutrition 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229940057867 methyl lactate Drugs 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- NRNFFDZCBYOZJY-UHFFFAOYSA-N p-quinodimethane Chemical group C=C1C=CC(=C)C=C1 NRNFFDZCBYOZJY-UHFFFAOYSA-N 0.000 description 1
- 239000006179 pH buffering agent Substances 0.000 description 1
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- DPBLXKKOBLCELK-UHFFFAOYSA-N pentan-1-amine Chemical compound CCCCCN DPBLXKKOBLCELK-UHFFFAOYSA-N 0.000 description 1
- LLYCMZGLHLKPPU-UHFFFAOYSA-N perbromic acid Chemical class OBr(=O)(=O)=O LLYCMZGLHLKPPU-UHFFFAOYSA-N 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- KHIWWQKSHDUIBK-UHFFFAOYSA-N periodic acid Chemical class OI(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000005498 phthalate group Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229960004889 salicylic acid Drugs 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 229940045872 sodium percarbonate Drugs 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 150000003890 succinate salts Chemical class 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
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- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
(a)研磨剤粒子、この研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、この少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、ここで、化学機械研磨組成物のpHは、1〜7の範囲であり、そしてこの化学機械研磨組成物はペルオキシ型の酸化剤を含まない。
(i)基材を準備すること、
(ii)研磨パッドを準備すること、
(iii)以下の(a)〜(c)を含む化学機械研磨組成物を準備すること、
(a)研磨剤粒子、この研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、この少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、ここで、化学機械研磨組成物のpHは、1〜7の範囲であり、そしてこの化学機械研磨組成物はペルオキシ型の酸化剤を含まない、
(iv)基材を研磨パッドおよび化学機械研磨組成物と接触させること、ならびに、
(v)研磨パッドおよび化学機械研磨組成物を、基材に対して動かして、基材の少なくとも一部を削り取って、基材を研磨すること。
(a)研磨剤粒子、この研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、この少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、ここで、化学機械研磨組成物のpHは、1〜7の範囲であり、そしてこの化学機械研磨組成物はペルオキシ型の酸化剤を含まない。
(i)基材を準備すること、
(ii)研磨パッドを準備すること、
(iii)前記の化学機械研磨組成物を準備すること、
(iv)基材を、研磨パッドおよび化学機械研磨組成物と接触させること、ならびに、
(v)研磨パッドおよび化学機械研磨組成物を、基材に対して動かして、基材の少なくとも一部を削り取って、基材を研磨すること。
(i)基材を準備すること、
(ii)研磨パッドを準備すること、
(iii)以下の(a)〜(c)を含む化学機械研磨組成物を準備すること、
(a)研磨剤粒子、この研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、この少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、ここで、化学機械研磨組成物のpHは、1〜7の範囲であり、そしてこの化学機械研磨組成物はペルオキシ型の酸化剤を含まない、
(iv)基材を、研磨パッドおよび化学機械研磨組成物と接触させること、ならびに、
(v)研磨パッドおよび化学機械研磨組成物を、基材に対して動かして、基材の少なくとも一部を削り取って、基材を研磨すること。
この例は、ポリベンゾオキサゾール(PBO)フィルムの除去速度に対するジルコニア研磨剤粒子の効果を示している。
この例は、硝酸アンモニウムセリウムの、ポリベンゾオキサゾール(PBO)の除去速度への効果を示している。
この例は、ジルコニア研磨剤粒子の、Ge2Sb2Te5(GST)の除去速度への効果を示している。
この例は、Fe3+を含む金属イオン酸化剤の、ポリベンゾオキサゾール(PBO)の除去速度への効果を示している。
Claims (41)
- 化学機械研磨組成物であって、
(a)研磨剤粒子、該研磨材粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、該少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、
を含んでなり、
該化学機械研磨組成物のpHは、1〜7の範囲であり、かつ該化学機械研磨組成物はペルオキシ型の酸化剤を含まない、
化学機械研磨組成物。 - 前記少なくとも1種の金属イオン酸化剤が、Fe3+を含む、請求項1記載の化学機械研磨組成物。
- 前記少なくとも1種の金属イオン酸化剤が、Ce4+を含む、請求項1記載の化学機械研磨組成物。
- 前記少なくとも1種の金属イオン酸化剤が、硝酸アンモニウムセリウムを含む、請求項1記載の化学機械研磨組成物。
- 前記研磨剤粒子が、ジルコニアからなる、請求項1記載の化学機械研磨組成物。
- 前記研磨剤粒子が、前記化学機械研磨組成物中に、0.5質量%〜3質量%の濃度で存在する、請求項1記載の化学機械研磨組成物。
- 前記少なくとも1種の金属イオン酸化剤が、前記化学機械研磨組成物中に、0.025質量%〜0.5質量%の濃度で存在する、請求項1記載の化学機械研磨組成物。
- 少なくとも1種の錯化剤を更に含む、請求項1記載の化学機械研磨組成物。
- 前記少なくとも1種の錯化剤が、モノ−、ジ−、トリ−、またはポリ−カルボン酸、アミン含有化合物、あるいはモノ−、ジ−、トリ−、またはポリ−リン酸である、請求項8記載の化学機械研磨組成物。
- 前記少なくとも1種の錯化剤が、ピコリン酸である、請求項9記載の化学機械研磨組成物。
- 腐食防止剤を更に含む、請求項1記載の化学機械研磨組成物。
- 前記化学機械研磨組成物のpHが、2〜3.5の範囲である、請求項1記載の化学機械研磨組成物。
- 基材の研磨方法であって、
(i)該基材を準備すること、
(ii)研磨パッドを準備すること、
(iii)請求項1記載の化学機械研磨組成物を準備すること、
(iv)該基材を該研磨パッドおよび該化学機械研磨組成物と接触させること、ならびに、
(v)該研磨パッドおよび該化学機械研磨組成物を、該基材に対して動かして、該基材の少なくとも一部を削り取って、該基材を研磨すること、
を含んでなる、方法。 - 基材の研磨方法であって、
(i)該基材を準備すること、該基材は有機ポリマーフィルムを含んでいる、
(ii)研磨パッドを準備すること、
(iii)以下の(a)〜(c)を含む化学機械研磨組成物を準備すること、
(a)研磨剤粒子、該研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、該少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、
ここで、該化学機械研磨組成物のpHは、1〜7の範囲であり、かつ該化学機械研磨組成物はペルオキシ型の酸化剤を含まない、
(iv)該基材を該研磨パッドおよび該化学機械研磨組成物と接触させること、ならびに、
(v)該研磨パッドおよび該化学機械研磨組成物を、該基材に対して動かして、該基材の表面の該有機ポリマーフィルムの少なくとも一部を削り取って、該基材を研磨すること、
を含んでなる、方法。 - 前記有機ポリマーフィルムが、2.5以上の誘電率を有する、請求項14記載の方法。
- 前記有機ポリマーフィルムが、ヘテロ環式有機ポリマーフィルムを含む、請求項14記載の方法。
- 前記ヘテロ環式有機ポリマーフィルムが、ポリベンゾオキサゾールを含む、請求項16記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、Fe3+を含む、請求項14記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、Ce4+を含む、請求項14記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、硝酸アンモニウムセリウムを含む、請求項14記載の方法。
- 前記研磨剤粒子が、ジルコニアからなる、請求項14記載の方法。
- 前記研磨剤粒子が、前記化学機械研磨組成物中に、0.5質量%〜3質量%の濃度で存在する、請求項14記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、前記化学機械研磨組成物中に、0.025質量%〜0.5質量%の濃度で存在する、請求項14記載の方法。
- 前記化学機械研磨組成物が、少なくとも1種の錯化剤を更に含む、請求項14記載の方法。
- 前記少なくとも1種の錯化剤が、モノ−、ジ−、トリ−、またはポリ−カルボン酸、アミン含有化合物、あるいはモノ−、ジ−、トリ−、またはポリ−リン酸である、請求項24記載の方法。
- 前記少なくとも1種の錯化剤が、ピコリン酸である、請求項25記載の方法。
- 前記化学機械研磨組成物が、腐食防止剤を更に含む、請求項14記載の方法。
- 前記化学機械研磨組成物のpHが、2〜3.5の範囲である、請求項14記載の方法。
- 基材の研磨方法であって、
(i)該基材を準備すること、該基材は相変化合金(PCA)を含んでいる、
(ii)研磨パッドを準備すること、
(iii)以下の(a)〜(c)を含む化学機械研磨組成物を準備すること、
(a)研磨剤粒子、該研磨剤粒子はジルコニアを含んでいる、
(b)少なくとも1種の金属イオン酸化剤、該少なくとも1種の金属イオン酸化剤は、Co3+、Au+、Ag+、Pt2+、Hg2+、Cr3+、Fe3+、Ce4+、もしくはCu2+の金属イオンを含む、ならびに、
(c)水性キャリア、
ここで、該化学機械研磨組成物のpHは、約1〜約7の範囲であり、かつ該化学機械研磨組成物はペルオキシ型の酸化剤を含まない、
(iv)該基材を該研磨パッドおよび該化学機械研磨組成物と接触させること、ならびに、
(v)該研磨パッドおよび該化学機械研磨組成物を、該基材に対して動かして、該基材の表面の該PCAの少なくとも一部を削り取って、該基材を研磨すること、
を含んでなる、方法。 - 前記相変化合金(PCA)が、ゲルマニウム−アンチモン−テルル(GST)を含む、請求項29記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、Fe3+を含む、請求項29記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、Ce4+を含む、請求項29記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、硝酸アンモニウムセリウムを含む、請求項29記載の方法。
- 前記研磨剤粒子が、ジルコニアからなる、請求項29記載の方法。
- 前記研磨剤粒子が、前記化学機械研磨組成物中に、約0.5質量%〜約3質量%の濃度で存在する、請求項29記載の方法。
- 前記少なくとも1種の金属イオン酸化剤が、前記化学機械研磨組成物中に、約0.025質量%〜約0.5質量%の濃度で存在する、請求項29記載の方法。
- 前記化学機械研磨組成物が、少なくとも1種の錯化剤を更に含む、請求項29記載の方法。
- 前記少なくとも1種の錯化剤が、モノ−、ジ−、トリ−、またはポリ−カルボン酸、アミン含有化合物、あるいはモノ−、ジ−、トリ−、またはポリ−リン酸である、請求項37記載の方法。
- 前記少なくとも1種の錯化剤が、ピコリン酸である、請求項38記載の方法。
- 前記化学機械研磨組成物が、腐食防止剤を更に含む、請求項29記載の方法。
- 前記化学機械研磨組成物のpHが、約2〜約3.5の範囲である、請求項29記載の方法。
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