JP2016509343A5 - - Google Patents

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Publication number
JP2016509343A5
JP2016509343A5 JP2015553734A JP2015553734A JP2016509343A5 JP 2016509343 A5 JP2016509343 A5 JP 2016509343A5 JP 2015553734 A JP2015553734 A JP 2015553734A JP 2015553734 A JP2015553734 A JP 2015553734A JP 2016509343 A5 JP2016509343 A5 JP 2016509343A5
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JP
Japan
Prior art keywords
temperature
optical element
light beam
amplified light
monitored
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Application number
JP2015553734A
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English (en)
Japanese (ja)
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JP2016509343A (ja
JP6250067B2 (ja
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Priority claimed from US13/747,263 external-priority patent/US9148941B2/en
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Publication of JP2016509343A publication Critical patent/JP2016509343A/ja
Publication of JP2016509343A5 publication Critical patent/JP2016509343A5/ja
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Publication of JP6250067B2 publication Critical patent/JP6250067B2/ja
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JP2015553734A 2013-01-22 2013-12-17 極端紫外線光源内の光学素子に対する増幅光ビームの位置調整方法 Active JP6250067B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/747,263 US9148941B2 (en) 2013-01-22 2013-01-22 Thermal monitor for an extreme ultraviolet light source
US13/747,263 2013-01-22
PCT/US2013/075871 WO2014116371A1 (en) 2013-01-22 2013-12-17 Thermal monitor for an extreme ultraviolet light source

Publications (3)

Publication Number Publication Date
JP2016509343A JP2016509343A (ja) 2016-03-24
JP2016509343A5 true JP2016509343A5 (enExample) 2016-12-22
JP6250067B2 JP6250067B2 (ja) 2017-12-20

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ID=51207012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015553734A Active JP6250067B2 (ja) 2013-01-22 2013-12-17 極端紫外線光源内の光学素子に対する増幅光ビームの位置調整方法

Country Status (5)

Country Link
US (1) US9148941B2 (enExample)
JP (1) JP6250067B2 (enExample)
KR (2) KR102062296B1 (enExample)
TW (1) TWI611427B (enExample)
WO (1) WO2014116371A1 (enExample)

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US10128017B1 (en) * 2017-05-12 2018-11-13 Asml Netherlands B.V. Apparatus for and method of controlling debris in an EUV light source
US10824083B2 (en) 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
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US20200057376A1 (en) * 2018-08-14 2020-02-20 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography system and lithography method
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