JP2015513094A5 - - Google Patents

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Publication number
JP2015513094A5
JP2015513094A5 JP2014561330A JP2014561330A JP2015513094A5 JP 2015513094 A5 JP2015513094 A5 JP 2015513094A5 JP 2014561330 A JP2014561330 A JP 2014561330A JP 2014561330 A JP2014561330 A JP 2014561330A JP 2015513094 A5 JP2015513094 A5 JP 2015513094A5
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JP
Japan
Prior art keywords
radiation
substrate
reflected
radiation source
surface region
Prior art date
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Granted
Application number
JP2014561330A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015513094A (ja
JP6114762B2 (ja
Filing date
Publication date
Priority claimed from DE102012005428.9A external-priority patent/DE102012005428B4/de
Application filed filed Critical
Publication of JP2015513094A publication Critical patent/JP2015513094A/ja
Publication of JP2015513094A5 publication Critical patent/JP2015513094A5/ja
Application granted granted Critical
Publication of JP6114762B2 publication Critical patent/JP6114762B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2014561330A 2012-03-16 2013-03-15 基板の温度を測定する装置 Active JP6114762B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats
DE102012005428.9 2012-03-16
PCT/EP2013/000807 WO2013135394A1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats

Publications (3)

Publication Number Publication Date
JP2015513094A JP2015513094A (ja) 2015-04-30
JP2015513094A5 true JP2015513094A5 (enExample) 2016-04-28
JP6114762B2 JP6114762B2 (ja) 2017-04-12

Family

ID=48128252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014561330A Active JP6114762B2 (ja) 2012-03-16 2013-03-15 基板の温度を測定する装置

Country Status (6)

Country Link
US (1) US9805993B2 (enExample)
EP (1) EP2825859B1 (enExample)
JP (1) JP6114762B2 (enExample)
KR (1) KR102045393B1 (enExample)
DE (1) DE102012005428B4 (enExample)
WO (1) WO2013135394A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017050772A1 (de) * 2015-09-23 2017-03-30 Centrotherm Photovoltaics Ag Verfahren und vorrichtung zum passivieren von defekten in halbleitersubstraten
CN118670525A (zh) * 2018-06-26 2024-09-20 应用材料公司 用于测量温度的方法和设备
KR20240033107A (ko) * 2018-09-24 2024-03-12 어플라이드 머티어리얼스, 인코포레이티드 세정 및 표면 처리를 위한 원자 산소 및 오존 디바이스
CN110124837B (zh) * 2019-05-17 2021-04-23 西安奕斯伟硅片技术有限公司 一种硅晶体的破碎方法及热处理装置
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5154512A (en) * 1990-04-10 1992-10-13 Luxtron Corporation Non-contact techniques for measuring temperature or radiation-heated objects
KR940703996A (ko) * 1992-11-03 1994-12-12 알.밴 오버스트래텐 가열챔버내 물체의 가열 조정방법 및 그 장치(System For The Controlled Heating Of An Object)
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6183130B1 (en) * 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
US6541287B2 (en) * 1998-03-19 2003-04-01 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
JP2000105152A (ja) * 1998-09-29 2000-04-11 Toshiba Corp 温度測定方法及びその装置
DE19964181B4 (de) * 1999-02-10 2005-12-08 Steag Rtp Systems Gmbh Vorrichtung zum Messen der Tempertur von Substraten
JP2002015982A (ja) * 2000-06-30 2002-01-18 Ibiden Co Ltd 赤外線温度センサ付きホットプレート
DE10032465A1 (de) * 2000-07-04 2002-01-31 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Objekten
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
JP4864396B2 (ja) * 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature

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