DE102012005428B4 - Vorrichtung zum Bestimmen der Temperatur eines Substrats - Google Patents

Vorrichtung zum Bestimmen der Temperatur eines Substrats Download PDF

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Publication number
DE102012005428B4
DE102012005428B4 DE102012005428.9A DE102012005428A DE102012005428B4 DE 102012005428 B4 DE102012005428 B4 DE 102012005428B4 DE 102012005428 A DE102012005428 A DE 102012005428A DE 102012005428 B4 DE102012005428 B4 DE 102012005428B4
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DE
Germany
Prior art keywords
radiation
substrate
temperature
pyrometer
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102012005428.9A
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German (de)
English (en)
Other versions
DE102012005428A1 (de
Inventor
Hartmut Rick
Dr. Lerch Wilfried
Dr. Nieß Jürgen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
HQ Dielectrics GmbH
Original Assignee
Centrotherm Photovoltaics AG
HQ Dielectrics GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG, HQ Dielectrics GmbH filed Critical Centrotherm Photovoltaics AG
Priority to DE102012005428.9A priority Critical patent/DE102012005428B4/de
Priority to KR1020147029081A priority patent/KR102045393B1/ko
Priority to JP2014561330A priority patent/JP6114762B2/ja
Priority to EP13716726.8A priority patent/EP2825859B1/de
Priority to PCT/EP2013/000807 priority patent/WO2013135394A1/de
Priority to US14/384,223 priority patent/US9805993B2/en
Publication of DE102012005428A1 publication Critical patent/DE102012005428A1/de
Application granted granted Critical
Publication of DE102012005428B4 publication Critical patent/DE102012005428B4/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE102012005428.9A 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats Active DE102012005428B4 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats
KR1020147029081A KR102045393B1 (ko) 2012-03-16 2013-03-15 기판의 온도를 판정하기 위한 장치 및 기판을 열처리하기 위한 방법
JP2014561330A JP6114762B2 (ja) 2012-03-16 2013-03-15 基板の温度を測定する装置
EP13716726.8A EP2825859B1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats
PCT/EP2013/000807 WO2013135394A1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats
US14/384,223 US9805993B2 (en) 2012-03-16 2013-03-15 Device for determining the temperature of a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats

Publications (2)

Publication Number Publication Date
DE102012005428A1 DE102012005428A1 (de) 2013-09-19
DE102012005428B4 true DE102012005428B4 (de) 2014-10-16

Family

ID=48128252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102012005428.9A Active DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats

Country Status (6)

Country Link
US (1) US9805993B2 (enExample)
EP (1) EP2825859B1 (enExample)
JP (1) JP6114762B2 (enExample)
KR (1) KR102045393B1 (enExample)
DE (1) DE102012005428B4 (enExample)
WO (1) WO2013135394A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180058750A (ko) * 2015-09-23 2018-06-01 센트로테에름 인터내셔널 아게 반도체 기판들 내의 결함들을 패시베이팅하기 위한 방법들 및 장치
JP7274512B2 (ja) * 2018-06-26 2023-05-16 アプライド マテリアルズ インコーポレイテッド 温度を測定するための方法及び装置
CN112703588A (zh) * 2018-09-24 2021-04-23 应用材料公司 用于清洁和表面处理的原子氧和臭氧装置
CN110124837B (zh) * 2019-05-17 2021-04-23 西安奕斯伟硅片技术有限公司 一种硅晶体的破碎方法及热处理装置
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5318362A (en) * 1990-04-10 1994-06-07 Luxtron Corporation Non-contact techniques for measuring temperature of radiation-heated objects
DE69523424T2 (de) * 1994-12-19 2002-06-27 Applied Materials, Inc. Verfahren und Gerät zur Messung der Substrattemperatur
DE69932165T2 (de) * 1998-08-06 2007-05-16 Applied Materials, Inc., Santa Clara Ein sensor zum messen einer substrattemperatur

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940703996A (ko) * 1992-11-03 1994-12-12 알.밴 오버스트래텐 가열챔버내 물체의 가열 조정방법 및 그 장치(System For The Controlled Heating Of An Object)
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
JP2000105152A (ja) * 1998-09-29 2000-04-11 Toshiba Corp 温度測定方法及びその装置
US6541287B2 (en) * 1998-03-19 2003-04-01 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
DE19964183B4 (de) * 1999-02-10 2004-04-29 Steag Rtp Systems Gmbh Vorrichtung und Verfahen zum Messen der Temperatur von Substraten
JP2002015982A (ja) * 2000-06-30 2002-01-18 Ibiden Co Ltd 赤外線温度センサ付きホットプレート
DE10032465A1 (de) * 2000-07-04 2002-01-31 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Objekten
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
JP4864396B2 (ja) * 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5318362A (en) * 1990-04-10 1994-06-07 Luxtron Corporation Non-contact techniques for measuring temperature of radiation-heated objects
DE69523424T2 (de) * 1994-12-19 2002-06-27 Applied Materials, Inc. Verfahren und Gerät zur Messung der Substrattemperatur
DE69932165T2 (de) * 1998-08-06 2007-05-16 Applied Materials, Inc., Santa Clara Ein sensor zum messen einer substrattemperatur

Also Published As

Publication number Publication date
WO2013135394A1 (de) 2013-09-19
JP6114762B2 (ja) 2017-04-12
DE102012005428A1 (de) 2013-09-19
JP2015513094A (ja) 2015-04-30
EP2825859B1 (de) 2022-10-19
KR102045393B1 (ko) 2019-11-15
US9805993B2 (en) 2017-10-31
US20150087085A1 (en) 2015-03-26
EP2825859A1 (de) 2015-01-21
KR20140140081A (ko) 2014-12-08

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