JP6114762B2 - 基板の温度を測定する装置 - Google Patents

基板の温度を測定する装置 Download PDF

Info

Publication number
JP6114762B2
JP6114762B2 JP2014561330A JP2014561330A JP6114762B2 JP 6114762 B2 JP6114762 B2 JP 6114762B2 JP 2014561330 A JP2014561330 A JP 2014561330A JP 2014561330 A JP2014561330 A JP 2014561330A JP 6114762 B2 JP6114762 B2 JP 6114762B2
Authority
JP
Japan
Prior art keywords
radiation
substrate
reflected
surface region
radiation source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2014561330A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015513094A (ja
JP2015513094A5 (enExample
Inventor
リック、ハルトムート
レアヒ、ヴィルフリート
ニース、ユルゲン
Original Assignee
セントロターム フォトヴォルテイックス アーゲー
セントロターム フォトヴォルテイックス アーゲー
ハークー−ディエレクトリック ゲーエムベーハー
ハークー−ディエレクトリック ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by セントロターム フォトヴォルテイックス アーゲー, セントロターム フォトヴォルテイックス アーゲー, ハークー−ディエレクトリック ゲーエムベーハー, ハークー−ディエレクトリック ゲーエムベーハー filed Critical セントロターム フォトヴォルテイックス アーゲー
Publication of JP2015513094A publication Critical patent/JP2015513094A/ja
Publication of JP2015513094A5 publication Critical patent/JP2015513094A5/ja
Application granted granted Critical
Publication of JP6114762B2 publication Critical patent/JP6114762B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/0275—Control or determination of height or distance or angle information for sensors or receivers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0801—Means for wavelength selection or discrimination
    • G01J5/0802—Optical filters
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Radiation Pyrometers (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2014561330A 2012-03-16 2013-03-15 基板の温度を測定する装置 Active JP6114762B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012005428.9 2012-03-16
DE102012005428.9A DE102012005428B4 (de) 2012-03-16 2012-03-16 Vorrichtung zum Bestimmen der Temperatur eines Substrats
PCT/EP2013/000807 WO2013135394A1 (de) 2012-03-16 2013-03-15 Vorrichtung zum bestimmen der temperatur eines substrats

Publications (3)

Publication Number Publication Date
JP2015513094A JP2015513094A (ja) 2015-04-30
JP2015513094A5 JP2015513094A5 (enExample) 2016-04-28
JP6114762B2 true JP6114762B2 (ja) 2017-04-12

Family

ID=48128252

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014561330A Active JP6114762B2 (ja) 2012-03-16 2013-03-15 基板の温度を測定する装置

Country Status (6)

Country Link
US (1) US9805993B2 (enExample)
EP (1) EP2825859B1 (enExample)
JP (1) JP6114762B2 (enExample)
KR (1) KR102045393B1 (enExample)
DE (1) DE102012005428B4 (enExample)
WO (1) WO2013135394A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180058750A (ko) * 2015-09-23 2018-06-01 센트로테에름 인터내셔널 아게 반도체 기판들 내의 결함들을 패시베이팅하기 위한 방법들 및 장치
JP7274512B2 (ja) * 2018-06-26 2023-05-16 アプライド マテリアルズ インコーポレイテッド 温度を測定するための方法及び装置
CN112703588A (zh) * 2018-09-24 2021-04-23 应用材料公司 用于清洁和表面处理的原子氧和臭氧装置
CN110124837B (zh) * 2019-05-17 2021-04-23 西安奕斯伟硅片技术有限公司 一种硅晶体的破碎方法及热处理装置
JP7370763B2 (ja) * 2019-08-22 2023-10-30 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法および熱処理装置
JP7338441B2 (ja) * 2019-12-13 2023-09-05 ウシオ電機株式会社 光加熱装置

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01124726A (ja) * 1987-11-09 1989-05-17 Toshiba Corp 加熱装置
US4919542A (en) * 1988-04-27 1990-04-24 Ag Processing Technologies, Inc. Emissivity correction apparatus and method
US5154512A (en) 1990-04-10 1992-10-13 Luxtron Corporation Non-contact techniques for measuring temperature or radiation-heated objects
KR940703996A (ko) * 1992-11-03 1994-12-12 알.밴 오버스트래텐 가열챔버내 물체의 가열 조정방법 및 그 장치(System For The Controlled Heating Of An Object)
US5624590A (en) * 1993-04-02 1997-04-29 Lucent Technologies, Inc. Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6179466B1 (en) * 1994-12-19 2001-01-30 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6183130B1 (en) * 1998-02-20 2001-02-06 Applied Materials, Inc. Apparatus for substrate temperature measurement using a reflecting cavity and detector
JP2000105152A (ja) * 1998-09-29 2000-04-11 Toshiba Corp 温度測定方法及びその装置
US6541287B2 (en) * 1998-03-19 2003-04-01 Kabushiki Kaisha Toshiba Temperature measuring method and apparatus, measuring method for the thickness of the formed film, measuring apparatus for the thickness of the formed film thermometer for wafers
DE19964183B4 (de) * 1999-02-10 2004-04-29 Steag Rtp Systems Gmbh Vorrichtung und Verfahen zum Messen der Temperatur von Substraten
JP2002015982A (ja) * 2000-06-30 2002-01-18 Ibiden Co Ltd 赤外線温度センサ付きホットプレート
DE10032465A1 (de) * 2000-07-04 2002-01-31 Steag Rtp Systems Gmbh Verfahren und Vorrichtung zum thermischen Behandeln von Objekten
US6849831B2 (en) * 2002-03-29 2005-02-01 Mattson Technology, Inc. Pulsed processing semiconductor heating methods using combinations of heating sources
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
US6835914B2 (en) * 2002-11-05 2004-12-28 Mattson Technology, Inc. Apparatus and method for reducing stray light in substrate processing chambers
US7642205B2 (en) * 2005-04-08 2010-01-05 Mattson Technology, Inc. Rapid thermal processing using energy transfer layers
JP4864396B2 (ja) * 2005-09-13 2012-02-01 株式会社東芝 半導体素子の製造方法、及び、半導体素子の製造装置
US7543981B2 (en) * 2006-06-29 2009-06-09 Mattson Technology, Inc. Methods for determining wafer temperature

Also Published As

Publication number Publication date
WO2013135394A1 (de) 2013-09-19
DE102012005428B4 (de) 2014-10-16
DE102012005428A1 (de) 2013-09-19
JP2015513094A (ja) 2015-04-30
EP2825859B1 (de) 2022-10-19
KR102045393B1 (ko) 2019-11-15
US9805993B2 (en) 2017-10-31
US20150087085A1 (en) 2015-03-26
EP2825859A1 (de) 2015-01-21
KR20140140081A (ko) 2014-12-08

Similar Documents

Publication Publication Date Title
JP6114762B2 (ja) 基板の温度を測定する装置
US8152365B2 (en) Method and system for determining optical properties of semiconductor wafers
JP4368792B2 (ja) 熱処理チャンバ内で温度測定装置を較正するシステムおよび方法
JP4518463B2 (ja) 基板の熱処理方法および熱処理装置
US5738440A (en) Combined emissivity and radiance measurement for the determination of the temperature of a radiant object
EP4111494B1 (en) Transmission-based temperature measurement of a workpiece in a thermal processing system
CN101512744A (zh) 用于确定晶片温度的方法
TWI701425B (zh) 用於晶圓溫度量測的腔室和光學裝置，及用於量測基板的溫度的方法
JP4461097B2 (ja) 高速加熱装置における半導体ウェーハの温度を決定する方法
JP2008235858A (ja) 半導体表面温度測定方法及びその装置
TWI585880B (zh) 透過雷射繞射測量３ｄ半導體結構之溫度的設備及方法
US20030067956A1 (en) Temperature measuring method and apparatus
JPH08184496A (ja) 放熱物体の温度測定に使用する角濾波による放射輝度の測定
CN116124292A (zh) 热处理系统及温度测量方法
JP2025004756A (ja) 半導体ワークピース用熱処理装置、及び温度制御調節方法
JPH11260748A (ja) 熱処理装置および熱処理方法
US20240363448A1 (en) Measuring systems, processing systems, and related apparatus and methods, including band gap materials
TWI906145B (zh) 熱處理系統中基於透過率的工件溫度測量
KR100529882B1 (ko) 노광기
JP2000114195A (ja) 基板処理装置、基板処理装置の放射温度計のキャリブレーションに使用する治具および放射温度計のキャリブレーション方法
TW202329291A (zh) 用於改正基板的熱處理的系統、方法和裝置
JPS6049851B2 (ja) 鋼板表面温度の校正法
JPS6228622A (ja) 近赤外分光光度計のシヤツタ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20150410

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20150410

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20150413

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160309

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160309

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170215

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170228

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170317

R150 Certificate of patent or registration of utility model

Ref document number: 6114762

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250