JP2016181630A5 - - Google Patents

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Publication number
JP2016181630A5
JP2016181630A5 JP2015061796A JP2015061796A JP2016181630A5 JP 2016181630 A5 JP2016181630 A5 JP 2016181630A5 JP 2015061796 A JP2015061796 A JP 2015061796A JP 2015061796 A JP2015061796 A JP 2015061796A JP 2016181630 A5 JP2016181630 A5 JP 2016181630A5
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JP
Japan
Prior art keywords
phase
block copolymer
group
derivatives
forming
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Application number
JP2015061796A
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English (en)
Japanese (ja)
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JP6346115B2 (ja
JP2016181630A (ja
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Priority to JP2015061796A priority Critical patent/JP6346115B2/ja
Priority claimed from JP2015061796A external-priority patent/JP6346115B2/ja
Priority to US15/065,129 priority patent/US9659816B2/en
Publication of JP2016181630A publication Critical patent/JP2016181630A/ja
Publication of JP2016181630A5 publication Critical patent/JP2016181630A5/ja
Application granted granted Critical
Publication of JP6346115B2 publication Critical patent/JP6346115B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2015061796A 2015-03-24 2015-03-24 パターン形成方法 Expired - Fee Related JP6346115B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015061796A JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法
US15/065,129 US9659816B2 (en) 2015-03-24 2016-03-09 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015061796A JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2016181630A JP2016181630A (ja) 2016-10-13
JP2016181630A5 true JP2016181630A5 (enExample) 2017-09-14
JP6346115B2 JP6346115B2 (ja) 2018-06-20

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JP2015061796A Expired - Fee Related JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法

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US (1) US9659816B2 (enExample)
JP (1) JP6346115B2 (enExample)

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* Cited by examiner, † Cited by third party
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US20180323078A1 (en) * 2015-12-24 2018-11-08 Intel Corporation Pitch division using directed self-assembly
TWI805162B (zh) * 2017-04-18 2023-06-11 日商東京威力科創股份有限公司 被處理體之處理裝置
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
KR102031825B1 (ko) * 2018-03-07 2019-10-15 한국과학기술원 용액재료의 자발적 상분리와 선택적 젖음을 이용한 미세패턴 제조방법
JP7257883B2 (ja) * 2018-07-25 2023-04-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US11062946B2 (en) * 2018-11-08 2021-07-13 International Business Machines Corporation Self-aligned contact on a semiconductor device
JP2020150175A (ja) * 2019-03-14 2020-09-17 キオクシア株式会社 半導体装置の製造方法、パターン膜の製造方法および金属含有有機膜
JP7146674B2 (ja) 2019-03-14 2022-10-04 キオクシア株式会社 パターン形成方法

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JP3515445B2 (ja) 1999-09-30 2004-04-05 株式会社東芝 ミクロパターンの形成方法
JP2005510436A (ja) * 2001-11-21 2005-04-21 ユニバーシティー オブ マサチューセッツ メソポーラス材料および方法
JP3967114B2 (ja) * 2001-11-22 2007-08-29 株式会社東芝 加工方法
US20070277866A1 (en) 2006-05-31 2007-12-06 General Electric Company Thermoelectric nanotube arrays
JP4673266B2 (ja) * 2006-08-03 2011-04-20 日本電信電話株式会社 パターン形成方法及びモールド
US8084087B2 (en) * 2007-02-14 2011-12-27 The Board Of Trustees Of The Leland Stanford Junior University Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
US7923373B2 (en) * 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5233789B2 (ja) 2008-03-26 2013-07-10 大日本印刷株式会社 パターン形成方法
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US8673541B2 (en) * 2010-10-29 2014-03-18 Seagate Technology Llc Block copolymer assembly methods and patterns formed thereby
US20120164389A1 (en) * 2010-12-28 2012-06-28 Yang Xiaomin Imprint template fabrication and repair based on directed block copolymer assembly
CN102915907B (zh) * 2011-08-02 2015-05-13 中芯国际集成电路制造(北京)有限公司 一种半导体器件制作方法
JP5694109B2 (ja) 2011-09-26 2015-04-01 株式会社東芝 パターン形成方法
US9177794B2 (en) * 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
WO2013112383A1 (en) * 2012-01-26 2013-08-01 Sigma-Aldrich Co. Llc Molybdenum allyl complexes and use thereof in thin film deposition
US20130209755A1 (en) 2012-02-15 2013-08-15 Phillip Dene Hustad Self-assembled structures, method of manufacture thereof and articles comprising the same
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
JP5881565B2 (ja) * 2012-09-07 2016-03-09 東京エレクトロン株式会社 基板処理方法、プログラム及びコンピュータ記憶媒体
JP6088800B2 (ja) * 2012-11-07 2017-03-01 株式会社東芝 パターン形成方法
EP2921472B1 (en) * 2012-11-13 2017-01-04 Adeka Corporation Metal alkoxide compound, thin film-forming starting material, method for producing thin film, and alcohol compound
JP5802233B2 (ja) * 2013-03-27 2015-10-28 株式会社東芝 パターン形成方法
US8853085B1 (en) * 2013-04-23 2014-10-07 International Business Machines Corporation Grapho-epitaxy DSA process with dimension control of template pattern
TWI661072B (zh) * 2014-02-04 2019-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沈積

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