JP2016181630A - パターン形成方法 - Google Patents
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- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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- G03F7/165—Monolayers, e.g. Langmuir-Blodgett
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- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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Abstract
【解決手段】実施形態のパターン形成方法は、基板上に、第1の重合体と、第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、ブロック共重合体層を熱処理し、ブロック共重合体層を、第1の重合体を含む第1の相と、第2の重合体を含む第2の相とに相分離させ、原子堆積法を用いて、第1の相上に選択的に金属層を形成し、且つ、第2の相を選択的に除去する。
【選択図】図5
Description
本実施形態のパターン形成方法は、基板上に、第1の重合体と、第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、ブロック共重合体層を熱処理し、ブロック共重合体層を、第1の重合体を含む第1の相と、第2の重合体を含む第2の相とに相分離させ、原子堆積法を用いて、第1の相上に選択的に金属層を形成し、且つ、第2の相を選択的に除去する。
本実施形態のパターン形成方法は、基板上に、第1の重合体と、第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、ブロック共重合体層を熱処理し、ブロック共重合体層を、第1の重合体を含む第1の相と、第2の重合体を含む第2の相とに相分離させ、原子堆積法を用いて、第1の相上に選択的に酸化物層を形成し、且つ、第2の相を選択的に除去する。
本実施形態のパターン形成方法は、基板上に、第1の重合体と、第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、ブロック共重合体層を熱処理し、ブロック共重合体層を、第1の重合体を含む第1の相と、第2の重合体を含む第2の相とに相分離させ、原子堆積法を用いて、第1の相上に選択的に酸化物層を形成し、且つ、第2の相を選択的に除去する。
本実施形態のパターン形成方法は、基板上に、第1の重合体と、第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、ブロック共重合体層を熱処理し、ブロック共重合体層を、第1の重合体を含む第1の相と、第2の重合体を含む第2の相とに相分離させ、原子堆積法を用いて、第1の相上に選択的に酸化物層を形成し、且つ、第2の相を選択的に除去する。
第1の実施形態のパターン形成方法の実施例を以下説明する。
ガイドパターン作製材料をPHS−OHとPHS−r−PMMA−OHからヒドロキシル基末端のポリ(2−ビニルピリジン)(P2VP−OH)とポリスチレン−ポリ(2−ビニルピリジン)ランダムコポリマー(PS−r−P2VP−OH)に変更し、ブロック共重合体材料をPHS−b−PMMAからPS−P2VPブロック共重合体(PS−b−P2VP)に変更した以外は実施例1と同様の処理を行った。なお、P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05で、PS−r−P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05、体積分率fPS=0.5で、PS−b−P2VPの分子量Mn=122,000、多分散度Mw/Mn=1.08、体積分率fPHS=0.5である。
第2の実施形態のパターン形成方法の実施例を以下説明する。
ガイドパターン作製材料をPHS−OHとPHS−r−PMMA−OHからヒドロキシル基末端のポリ(2−ビニルピリジン)(P2VP−OH)とポリスチレン−ポリ(2−ビニルピリジン)ランダムコポリマー(PS−r−P2VP−OH)に変更した以外は実施例3と同様の処理を行った。
第3の実施形態のパターン形成方法の実施例を以下説明する。
ガイドパターン作製材料をPHS−OHとPHS−r−PMMA−OHからヒドロキシル基末端のポリ(2−ビニルピリジン)(P2VP−OH)とポリスチレン−ポリ(2−ビニルピリジン)ランダムコポリマー(PS−r−P2VP−OH)に変更し、ブロック共重合体材料をPHS−b−PMMAからPS−P2VPブロック共重合体(PS−b−P2VP)に変更した以外は実施例5と同様の処理を行った。なお、P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05で、PS−r−P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05、体積分率fPS=0.5で、PS−b−P2VPの分子量Mn=122,000、多分散度Mw/Mn=1.08、体積分率fPHS=0.5である。
PHS−b−PMMAでL&Sパターン形成するところまでは実施例1と同様の処理を行う。
ガイドパターン作製材料をPHS−OHとPHS−r−PMMA−OHからヒドロキシル基末端のポリ(2−ビニルピリジン)(P2VP−OH)とポリスチレン−ポリ(2−ビニルピリジン)ランダムコポリマー(PS−r−P2VP−OH)に変更し、ブロック共重合体材料をPHS−b−PMMAからPS−P2VPブロック共重合体(PS−b−P2VP)に変更した以外は実施例7と同様の処理を行った。なお、P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05で、PS−r−P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05、体積分率fPS=0.5で、PS−b−P2VPの分子量Mn=122,000、多分散度Mw/Mn=1.08、体積分率fPHS=0.5である。
PHS−b−PMMAでL&Sパターン形成するところまでは実施例3と同様な処理を行う。
ガイドパターン作製材料をPHS−OHとPHS−r−PMMA−OHからヒドロキシル基末端のポリ(2−ビニルピリジン)(P2VP−OH)とポリスチレン−ポリ(2−ビニルピリジン)ランダムコポリマー(PS−r−P2VP−OH)に変更し、ブロック共重合体材料をPHS−b−PMMAからPS−P2VPブロック共重合体(PS−b−P2VP)に変更した以外は実施例9と同様の処理を行った。
なお、P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05で、PS−r−P2VP−OHの分子量Mn=50,000、多分散度Mw/Mn=1.05、体積分率fPS=0.5で、PS−b−P2VPの分子量Mn=122,000、多分散度Mw/Mn=1.08、体積分率fPHS=0.5である。
第4の実施形態のパターン形成方法の実施例を以下説明する。
PS−b−P2VPの分子量Mn=122,000、多分散度Mw/Mn=1.08、体積分率fPHS=0.75である。
14 ブロック共重合体層
14a 第1の相
14b 第2の相
16 金属層
Claims (1)
- 基板上に、第1の重合体と、前記第1の重合体より低い表面エネルギーを有する第2の重合体とを含むブロック共重合体層を形成し、
前記ブロック共重合体層を熱処理し、前記ブロック共重合体層を、前記第1の重合体を含む第1の相と、前記第2の重合体を含む第2の相とに相分離させ、
原子堆積法を用いて、前記第1の相上に選択的に金属層を形成し、且つ、前記第2の相を選択的に除去するパターン形成方法。
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JP2015061796A JP6346115B2 (ja) | 2015-03-24 | 2015-03-24 | パターン形成方法 |
US15/065,129 US9659816B2 (en) | 2015-03-24 | 2016-03-09 | Pattern forming method |
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JP2015061796A JP6346115B2 (ja) | 2015-03-24 | 2015-03-24 | パターン形成方法 |
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JP2016181630A5 JP2016181630A5 (ja) | 2017-09-14 |
JP6346115B2 JP6346115B2 (ja) | 2018-06-20 |
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CN108735596A (zh) * | 2017-04-18 | 2018-11-02 | 东京毅力科创株式会社 | 处理被处理体的方法 |
JP2018182310A (ja) * | 2017-04-18 | 2018-11-15 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
KR20190106099A (ko) * | 2018-03-07 | 2019-09-18 | 한국과학기술원 | 용액재료의 자발적 상분리와 선택적 젖음을 이용한 미세패턴 제조방법 |
JP2020025078A (ja) * | 2018-07-25 | 2020-02-13 | 東京エレクトロン株式会社 | プラズマ処理方法およびプラズマ処理装置 |
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WO2017111822A1 (en) * | 2015-12-24 | 2017-06-29 | Intel Corporation | Pitch division using directed self-assembly |
JP6895352B2 (ja) * | 2017-09-12 | 2021-06-30 | 東京エレクトロン株式会社 | 被加工物を処理する方法 |
US11062946B2 (en) * | 2018-11-08 | 2021-07-13 | International Business Machines Corporation | Self-aligned contact on a semiconductor device |
JP2020150175A (ja) * | 2019-03-14 | 2020-09-17 | キオクシア株式会社 | 半導体装置の製造方法、パターン膜の製造方法および金属含有有機膜 |
JP7146674B2 (ja) | 2019-03-14 | 2022-10-04 | キオクシア株式会社 | パターン形成方法 |
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