JP6346115B2 - パターン形成方法 - Google Patents

パターン形成方法 Download PDF

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Publication number
JP6346115B2
JP6346115B2 JP2015061796A JP2015061796A JP6346115B2 JP 6346115 B2 JP6346115 B2 JP 6346115B2 JP 2015061796 A JP2015061796 A JP 2015061796A JP 2015061796 A JP2015061796 A JP 2015061796A JP 6346115 B2 JP6346115 B2 JP 6346115B2
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JP
Japan
Prior art keywords
phase
block copolymer
polymer
layer
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2015061796A
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English (en)
Japanese (ja)
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JP2016181630A5 (enExample
JP2016181630A (ja
Inventor
敦 日恵野
敦 日恵野
鋼児 浅川
鋼児 浅川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kioxia Corp
Original Assignee
Toshiba Memory Corp
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Publication date
Application filed by Toshiba Memory Corp filed Critical Toshiba Memory Corp
Priority to JP2015061796A priority Critical patent/JP6346115B2/ja
Priority to US15/065,129 priority patent/US9659816B2/en
Publication of JP2016181630A publication Critical patent/JP2016181630A/ja
Publication of JP2016181630A5 publication Critical patent/JP2016181630A5/ja
Application granted granted Critical
Publication of JP6346115B2 publication Critical patent/JP6346115B2/ja
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    • H10W20/057—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00031—Regular or irregular arrays of nanoscale structures, e.g. etch mask layer
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/002—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor using materials containing microcapsules; Preparing or processing such materials, e.g. by pressure; Devices or apparatus specially designed therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/165—Monolayers, e.g. Langmuir-Blodgett
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • H10P14/683—
    • H10P50/287—
    • H10P50/642—
    • H10P50/73—
    • H10P76/20—
    • H10P76/2042—
    • H10P76/4085—
    • H10W20/089—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0147—Film patterning
    • B81C2201/0149—Forming nanoscale microstructures using auto-arranging or self-assembling material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • General Chemical & Material Sciences (AREA)
  • Laminated Bodies (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
JP2015061796A 2015-03-24 2015-03-24 パターン形成方法 Expired - Fee Related JP6346115B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2015061796A JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法
US15/065,129 US9659816B2 (en) 2015-03-24 2016-03-09 Pattern forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015061796A JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法

Publications (3)

Publication Number Publication Date
JP2016181630A JP2016181630A (ja) 2016-10-13
JP2016181630A5 JP2016181630A5 (enExample) 2017-09-14
JP6346115B2 true JP6346115B2 (ja) 2018-06-20

Family

ID=56974399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015061796A Expired - Fee Related JP6346115B2 (ja) 2015-03-24 2015-03-24 パターン形成方法

Country Status (2)

Country Link
US (1) US9659816B2 (enExample)
JP (1) JP6346115B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950439B2 (en) 2019-03-14 2021-03-16 Toshiba Memory Corporation Pattern forming method

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* Cited by examiner, † Cited by third party
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US20180323078A1 (en) * 2015-12-24 2018-11-08 Intel Corporation Pitch division using directed self-assembly
TWI805162B (zh) * 2017-04-18 2023-06-11 日商東京威力科創股份有限公司 被處理體之處理裝置
JP7071175B2 (ja) * 2017-04-18 2022-05-18 東京エレクトロン株式会社 被処理体を処理する方法
JP6895352B2 (ja) * 2017-09-12 2021-06-30 東京エレクトロン株式会社 被加工物を処理する方法
KR102031825B1 (ko) * 2018-03-07 2019-10-15 한국과학기술원 용액재료의 자발적 상분리와 선택적 젖음을 이용한 미세패턴 제조방법
JP7257883B2 (ja) * 2018-07-25 2023-04-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
US11062946B2 (en) * 2018-11-08 2021-07-13 International Business Machines Corporation Self-aligned contact on a semiconductor device
JP2020150175A (ja) * 2019-03-14 2020-09-17 キオクシア株式会社 半導体装置の製造方法、パターン膜の製造方法および金属含有有機膜

Family Cites Families (24)

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JP3515445B2 (ja) 1999-09-30 2004-04-05 株式会社東芝 ミクロパターンの形成方法
JP2005510436A (ja) * 2001-11-21 2005-04-21 ユニバーシティー オブ マサチューセッツ メソポーラス材料および方法
JP3967114B2 (ja) * 2001-11-22 2007-08-29 株式会社東芝 加工方法
US20070277866A1 (en) 2006-05-31 2007-12-06 General Electric Company Thermoelectric nanotube arrays
JP4673266B2 (ja) * 2006-08-03 2011-04-20 日本電信電話株式会社 パターン形成方法及びモールド
US8084087B2 (en) * 2007-02-14 2011-12-27 The Board Of Trustees Of The Leland Stanford Junior University Fabrication method of size-controlled, spatially distributed nanostructures by atomic layer deposition
US7923373B2 (en) * 2007-06-04 2011-04-12 Micron Technology, Inc. Pitch multiplication using self-assembling materials
JP5233789B2 (ja) 2008-03-26 2013-07-10 大日本印刷株式会社 パターン形成方法
US8274777B2 (en) 2008-04-08 2012-09-25 Micron Technology, Inc. High aspect ratio openings
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US8673541B2 (en) * 2010-10-29 2014-03-18 Seagate Technology Llc Block copolymer assembly methods and patterns formed thereby
US20120164389A1 (en) * 2010-12-28 2012-06-28 Yang Xiaomin Imprint template fabrication and repair based on directed block copolymer assembly
CN102915907B (zh) * 2011-08-02 2015-05-13 中芯国际集成电路制造(北京)有限公司 一种半导体器件制作方法
JP5694109B2 (ja) 2011-09-26 2015-04-01 株式会社東芝 パターン形成方法
US9177794B2 (en) * 2012-01-13 2015-11-03 Micron Technology, Inc. Methods of patterning substrates
WO2013112383A1 (en) * 2012-01-26 2013-08-01 Sigma-Aldrich Co. Llc Molybdenum allyl complexes and use thereof in thin film deposition
US20130209755A1 (en) 2012-02-15 2013-08-15 Phillip Dene Hustad Self-assembled structures, method of manufacture thereof and articles comprising the same
US9005877B2 (en) 2012-05-15 2015-04-14 Tokyo Electron Limited Method of forming patterns using block copolymers and articles thereof
JP5881565B2 (ja) * 2012-09-07 2016-03-09 東京エレクトロン株式会社 基板処理方法、プログラム及びコンピュータ記憶媒体
JP6088800B2 (ja) * 2012-11-07 2017-03-01 株式会社東芝 パターン形成方法
EP2921472B1 (en) * 2012-11-13 2017-01-04 Adeka Corporation Metal alkoxide compound, thin film-forming starting material, method for producing thin film, and alcohol compound
JP5802233B2 (ja) * 2013-03-27 2015-10-28 株式会社東芝 パターン形成方法
US8853085B1 (en) * 2013-04-23 2014-10-07 International Business Machines Corporation Grapho-epitaxy DSA process with dimension control of template pattern
TWI661072B (zh) * 2014-02-04 2019-06-01 荷蘭商Ａｓｍ Ｉｐ控股公司 金屬、金屬氧化物與介電質的選擇性沈積

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10950439B2 (en) 2019-03-14 2021-03-16 Toshiba Memory Corporation Pattern forming method

Also Published As

Publication number Publication date
US20160284560A1 (en) 2016-09-29
US9659816B2 (en) 2017-05-23
JP2016181630A (ja) 2016-10-13

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