JP2016174154A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
- Publication number
- JP2016174154A JP2016174154A JP2016053859A JP2016053859A JP2016174154A JP 2016174154 A JP2016174154 A JP 2016174154A JP 2016053859 A JP2016053859 A JP 2016053859A JP 2016053859 A JP2016053859 A JP 2016053859A JP 2016174154 A JP2016174154 A JP 2016174154A
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- type region
- layer
- region
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 249
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 230000005684 electric field Effects 0.000 claims description 103
- 230000005641 tunneling Effects 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 53
- 150000002736 metal compounds Chemical class 0.000 claims description 36
- 239000002019 doping agent Substances 0.000 claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 29
- 239000001301 oxygen Substances 0.000 claims description 29
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 28
- 230000004888 barrier function Effects 0.000 claims description 28
- 229910052733 gallium Inorganic materials 0.000 claims description 28
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 27
- 229910052725 zinc Inorganic materials 0.000 claims description 27
- 239000011701 zinc Substances 0.000 claims description 27
- 229910052738 indium Inorganic materials 0.000 claims description 23
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000013078 crystal Substances 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 7
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 6
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 6
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 6
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 6
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 5
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 7
- 150000004706 metal oxides Chemical class 0.000 abstract description 7
- 239000010410 layer Substances 0.000 description 275
- 239000002585 base Substances 0.000 description 40
- 238000002161 passivation Methods 0.000 description 19
- 230000000694 effects Effects 0.000 description 18
- 230000004048 modification Effects 0.000 description 17
- 238000012986 modification Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000000969 carrier Substances 0.000 description 14
- 230000007423 decrease Effects 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000002955 isolation Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000031700 light absorption Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/062—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the metal-insulator-semiconductor type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (20)
- 半導体基板と、
前記半導体基板の一面側に設けられ、第1導電型を有する第1導電型領域と、
前記第1導電型と反対の第2導電型を有する第2導電型領域と、
前記第1導電型領域に接続された第1電極と、
前記第2導電型領域に接続された第2電極と、
を備え、
前記第1導電型領域及び前記第2導電型領域のうち少なくとも一つが金属化合物層で構成される、太陽電池。 - 前記半導体基板の一面上に設けられたトンネリング層をさらに備え、
前記第1導電型領域及び前記第2導電型領域が前記トンネリング層上に共に配置される、請求項1に記載の太陽電池。 - 前記第1導電型領域及び前記第2導電型領域のうち少なくとも一つは、前記半導体物質、該半導体物質でドーパントとして作用する物質を含まない、請求項2に記載の太陽電池。
- 前記半導体基板がn型の導電型を有するシリコンを含み、
前記第1導電型領域が金属化合物層で構成され、正孔を選択的に収集するエミッタ領域であり、
前記第1導電型領域のフェルミレベルが前記半導体基板のフェルミレベルよりも低く、前記第1導電型領域の仕事関数が前記半導体基板の仕事関数よりも大きく、
前記第1導電型領域がモリブデン酸化物層、タングステン酸化物層、又はバナジウム酸化物層で構成される、請求項2に記載の太陽電池。 - 前記半導体基板がn型の導電型を有するシリコンを含み、
前記第2導電型領域が金属化合物層で構成され、電子を選択的に収集する電界領域であり、
前記第2導電型領域のフェルミレベルが前記半導体基板のフェルミレベルよりも高く、前記第2導電型領域の仕事関数が前記半導体基板の仕事関数よりも小さく、
前記第2導電型領域がチタン酸化物層又は亜鉛酸化物層で構成される、請求項2に記載の太陽電池。 - 前記第1導電型領域が第1金属化合物層で構成され、
前記第2導電型領域が前記第1金属化合物層と異なる第2金属化合物層で構成される、請求項2に記載の太陽電池。 - 前記第1導電型領域及び前記第2導電型領域のうち少なくとも一つに接続される前記第1電極又は前記第2電極は、透明導電性物質を含む第1電極層と、前記第1電極層上に設けられ、パターンを有し、金属物質を含む第2電極層とを有する、請求項2に記載の太陽電池。
- 前記半導体基板の他面上に設けられ、固定電荷を含み、又は金属化合物を含む層で構成される前面電界形成層をさらに備え、
前記前面電界形成層は、アルミニウム酸化物層、モリブデン酸化物層、タングステン酸化物層、バナジウム酸化物層、チタン酸化物層及び亜鉛酸化物層のうち少なくとも一つを含む、請求項2に記載の太陽電池。 - 前記半導体基板の他面上に設けられ、固定電荷を含み、又は金属化合物を含む層で構成される前面電界形成層をさらに備え、
前記前面電界形成層の前記金属化合物を含む層と、前記第1導電型領域及び前記第2導電型領域のうち少なくとも一つに含まれる前記金属化合物層とが同じ物質で構成される、請求項2に記載の太陽電池。 - 前記第2導電型領域が金属化合物層で構成され、金属及び酸素を含む酸化物半導体層を含み、
前記第1導電型領域が前記第2導電型領域と異なる半導体物質を含む、請求項1に記載の太陽電池。 - 前記第1導電型領域が単一半導体物質を含む、請求項10に記載の太陽電池。
- 前記第2導電型領域の前記酸化物半導体層がn型を有し、第12族又は第13族に含まれる金属を1つ又は複数含む、請求項10に記載の太陽電池。
- 前記酸化物半導体層がインジウム、ガリウム及び亜鉛を含む、請求項12に記載の太陽電池。
- 前記第2導電型領域において前記インジウムの量が前記ガリウムの量、前記亜鉛の量及び前記酸素の量のそれぞれよりも多い、請求項13に記載の太陽電池。
- 前記亜鉛の量が前記ガリウムの量及び前記酸素の量のそれぞれよりも多い、請求項14に記載の太陽電池。
- 前記第2導電型領域内にインジウムの量が50at%〜90%であり、
前記第2導電型領域内に亜鉛の量が10at%〜40%であり、
前記第2導電型領域内にガリウムの量が1at%〜10%である、請求項13に記載の太陽電池。 - 前記半導体基板が単一半導体物質を含み、前記半導体基板と前記第2導電型領域の半導体物質が互いに異なり、
前記半導体基板と前記第1導電型領域とが同じ単一半導体物質を含み、結晶構造は互いに異なる、請求項11に記載の太陽電池。 - 前記半導体基板が前記第2導電型を有し、
前記第1導電型領域が前記半導体基板と異なる導電型を有してエミッタ領域を構成し、
前記第2導電型領域が前記半導体基板と同じ導電型を有して前面電界領域又は背面電界領域を構成する、請求項10に記載の太陽電池。 - 前記半導体基板の一面上に形成されるトンネリング層をさらに備え、
前記第1導電型領域及び前記第2導電型領域が前記トンネリング層上に共に設けられており、
前記第1導電型領域と前記第2導電型領域との間に分離領域又はバリアー領域が設けられている、請求項10に記載の太陽電池。 - 前記半導体基板の他面に前記第2導電型領域が設けられており、
前記第2導電型領域が前記半導体基板に接して形成され、又は前記半導体基板と前記第2導電型領域との間にトンネリング層がさらに設けられている、請求項10に記載の太陽電池。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2015-0036472 | 2015-03-17 | ||
KR10-2015-0036473 | 2015-03-17 | ||
KR1020150036473A KR20160111623A (ko) | 2015-03-17 | 2015-03-17 | 태양 전지 |
KR1020150036472A KR20160111622A (ko) | 2015-03-17 | 2015-03-17 | 태양 전지 |
KR10-2015-0138657 | 2015-10-01 | ||
KR1020150138657A KR20170039472A (ko) | 2015-10-01 | 2015-10-01 | 태양 전지 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017087299A Division JP6522684B2 (ja) | 2015-03-17 | 2017-04-26 | 太陽電池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016174154A true JP2016174154A (ja) | 2016-09-29 |
JP6505627B2 JP6505627B2 (ja) | 2019-04-24 |
Family
ID=55542564
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016053859A Active JP6505627B2 (ja) | 2015-03-17 | 2016-03-17 | 太陽電池 |
JP2017087299A Active JP6522684B2 (ja) | 2015-03-17 | 2017-04-26 | 太陽電池 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017087299A Active JP6522684B2 (ja) | 2015-03-17 | 2017-04-26 | 太陽電池 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10566483B2 (ja) |
EP (2) | EP3070750B1 (ja) |
JP (2) | JP6505627B2 (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6266176B1 (ja) * | 2016-11-15 | 2018-01-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池の製造方法 |
KR101848182B1 (ko) | 2016-12-27 | 2018-04-11 | 울산과학기술원 | 후면전극 태양전지의 제조방법 |
JP2018082157A (ja) * | 2016-11-14 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2018082160A (ja) * | 2017-10-24 | 2018-05-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム |
JP2018082162A (ja) * | 2016-11-14 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2018117125A (ja) * | 2017-01-20 | 2018-07-26 | エルジー エレクトロニクス インコーポレイティド | 異種接合太陽電池及びその製造方法 |
JP2018121053A (ja) * | 2017-01-26 | 2018-08-02 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
KR20190049273A (ko) * | 2017-11-01 | 2019-05-09 | 한국생산기술연구원 | 태양 전지 |
WO2020071083A1 (ja) * | 2018-10-02 | 2020-04-09 | 株式会社カネカ | 太陽電池デバイスおよび太陽電池モジュール |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3151289A1 (en) * | 2015-10-01 | 2017-04-05 | LG Electronics Inc. | Solar cell |
EP4006993A4 (en) * | 2019-07-31 | 2023-07-05 | Kaneka Corporation | METHOD OF MANUFACTURING A SOLAR CELL, SOLAR CELL, SOLAR CELL DEVICE AND SOLAR CELL MODULE |
JPWO2021171953A1 (ja) * | 2020-02-26 | 2021-09-02 | ||
US20230238463A1 (en) * | 2020-06-15 | 2023-07-27 | Longi Green Energy Technology Co., Ltd. | Back contact solar cell and production method, and back contact battery assembly |
CN112201701B (zh) * | 2020-09-30 | 2024-05-03 | 浙江晶科能源有限公司 | 太阳能电池和光伏组件 |
CN115274875A (zh) * | 2022-05-31 | 2022-11-01 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
CN117712199A (zh) | 2022-09-08 | 2024-03-15 | 浙江晶科能源有限公司 | 太阳能电池及光伏组件 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011086770A (ja) * | 2009-10-15 | 2011-04-28 | Idemitsu Kosan Co Ltd | 光電変換素子及びその製造方法 |
JP2012069538A (ja) * | 2010-05-11 | 2012-04-05 | Tokyo Univ Of Agriculture & Technology | 半導体ソーラーセル及びその製造方法 |
US20130247965A1 (en) * | 2012-03-23 | 2013-09-26 | Richard M. Swanson | Solar cell having an emitter region with wide bandgap semiconductor material |
JP2013234106A (ja) * | 2012-02-17 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | p型半導体材料および半導体装置 |
JP2014027001A (ja) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | 光電変換素子 |
JP2014053421A (ja) * | 2012-09-06 | 2014-03-20 | Sharp Corp | 太陽電池 |
US20140102524A1 (en) * | 2012-10-15 | 2014-04-17 | Silevo, Inc. | Novel electron collectors for silicon photovoltaic cells |
JP2015015472A (ja) * | 2013-07-05 | 2015-01-22 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE202010018510U1 (de) * | 2009-09-07 | 2017-03-15 | Lg Electronics Inc. | Solarzelle |
JP5792523B2 (ja) * | 2010-06-18 | 2015-10-14 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
US9099596B2 (en) | 2011-07-29 | 2015-08-04 | International Business Machines Corporation | Heterojunction photovoltaic device and fabrication method |
TWI495615B (zh) * | 2012-09-28 | 2015-08-11 | Ind Tech Res Inst | p型金屬氧化物半導體材料 |
US8642378B1 (en) * | 2012-12-18 | 2014-02-04 | International Business Machines Corporation | Field-effect inter-digitated back contact photovoltaic device |
WO2014134515A1 (en) | 2013-02-28 | 2014-09-04 | The Board Of Trustees Of The Leland Stanford Junior University | High-efficiency, low-cost silicon-zinc oxide heterojunction solar cells |
KR101613843B1 (ko) | 2013-04-23 | 2016-04-20 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
-
2016
- 2016-03-16 US US15/071,923 patent/US10566483B2/en active Active
- 2016-03-17 JP JP2016053859A patent/JP6505627B2/ja active Active
- 2016-03-17 EP EP16160828.6A patent/EP3070750B1/en not_active Not-in-force
- 2016-03-17 EP EP17185839.2A patent/EP3261133B1/en active Active
-
2017
- 2017-04-26 JP JP2017087299A patent/JP6522684B2/ja active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011086770A (ja) * | 2009-10-15 | 2011-04-28 | Idemitsu Kosan Co Ltd | 光電変換素子及びその製造方法 |
JP2012069538A (ja) * | 2010-05-11 | 2012-04-05 | Tokyo Univ Of Agriculture & Technology | 半導体ソーラーセル及びその製造方法 |
JP2013234106A (ja) * | 2012-02-17 | 2013-11-21 | Semiconductor Energy Lab Co Ltd | p型半導体材料および半導体装置 |
US20130247965A1 (en) * | 2012-03-23 | 2013-09-26 | Richard M. Swanson | Solar cell having an emitter region with wide bandgap semiconductor material |
JP2014027001A (ja) * | 2012-07-24 | 2014-02-06 | Toyota Gakuen | 光電変換素子 |
JP2014053421A (ja) * | 2012-09-06 | 2014-03-20 | Sharp Corp | 太陽電池 |
US20140102524A1 (en) * | 2012-10-15 | 2014-04-17 | Silevo, Inc. | Novel electron collectors for silicon photovoltaic cells |
JP2015015472A (ja) * | 2013-07-05 | 2015-01-22 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018082157A (ja) * | 2016-11-14 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2018082162A (ja) * | 2016-11-14 | 2018-05-24 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
WO2018092189A1 (ja) * | 2016-11-15 | 2018-05-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム |
US11201253B2 (en) | 2016-11-15 | 2021-12-14 | Shin-Etsu Chemical Co., Ltd. | High photovoltaic-conversion efficiency solar cell, method for manufacturing the same, solar cell module, and photovoltaic power generation system |
JP6266176B1 (ja) * | 2016-11-15 | 2018-01-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池の製造方法 |
CN110073504A (zh) * | 2016-11-15 | 2019-07-30 | 信越化学工业株式会社 | 高光电转换效率的太阳能电池、其制造方法、太阳能电池组件和光伏发电系统 |
KR101848182B1 (ko) | 2016-12-27 | 2018-04-11 | 울산과학기술원 | 후면전극 태양전지의 제조방법 |
US10249776B2 (en) | 2017-01-20 | 2019-04-02 | Lg Electronics Inc. | Heterojunction solar cell and manufacturing method thereof |
JP2018117125A (ja) * | 2017-01-20 | 2018-07-26 | エルジー エレクトロニクス インコーポレイティド | 異種接合太陽電池及びその製造方法 |
KR102018381B1 (ko) * | 2017-01-26 | 2019-09-04 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
KR20180088083A (ko) * | 2017-01-26 | 2018-08-03 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
JP2018121053A (ja) * | 2017-01-26 | 2018-08-02 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びその製造方法 |
JP2018082160A (ja) * | 2017-10-24 | 2018-05-24 | 信越化学工業株式会社 | 高光電変換効率太陽電池、その製造方法、太陽電池モジュール及び太陽光発電システム |
KR20190049273A (ko) * | 2017-11-01 | 2019-05-09 | 한국생산기술연구원 | 태양 전지 |
KR101992964B1 (ko) * | 2017-11-01 | 2019-09-30 | 한국생산기술연구원 | 태양 전지 |
WO2020071083A1 (ja) * | 2018-10-02 | 2020-04-09 | 株式会社カネカ | 太陽電池デバイスおよび太陽電池モジュール |
JPWO2020071083A1 (ja) * | 2018-10-02 | 2021-09-02 | 株式会社カネカ | 太陽電池デバイスおよび太陽電池モジュール |
JP7467352B2 (ja) | 2018-10-02 | 2024-04-15 | 株式会社カネカ | 太陽電池デバイスおよび太陽電池モジュール |
Also Published As
Publication number | Publication date |
---|---|
US20160276515A1 (en) | 2016-09-22 |
US10566483B2 (en) | 2020-02-18 |
EP3261133A1 (en) | 2017-12-27 |
JP2017135421A (ja) | 2017-08-03 |
EP3261133B1 (en) | 2022-05-04 |
EP3070750B1 (en) | 2017-08-23 |
JP6505627B2 (ja) | 2019-04-24 |
JP6522684B2 (ja) | 2019-05-29 |
EP3070750A1 (en) | 2016-09-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6522684B2 (ja) | 太陽電池 | |
USRE47484E1 (en) | Solar cell | |
KR101918738B1 (ko) | 태양 전지 | |
JP6235536B2 (ja) | 太陽電池 | |
JP2005019742A (ja) | 太陽電池 | |
US20230307569A1 (en) | Carrier-selective contact junction silicon solar cell and manufacturing method therefor | |
US11522091B2 (en) | Solar cell | |
JP2012530378A (ja) | 太陽電池及びその製造方法 | |
KR20200075640A (ko) | 텐덤 태양전지 | |
KR102586115B1 (ko) | 양면 수광형 실리콘 태양전지 | |
JP2017069567A (ja) | 太陽電池 | |
KR101625876B1 (ko) | 태양 전지 및 이의 제조 방법 | |
JP2018121053A (ja) | 太陽電池及びその製造方法 | |
JP2013510427A (ja) | 太陽電池及びその製造方法 | |
KR101905477B1 (ko) | 태양 전지 및 이의 제조 방법 | |
KR20200061479A (ko) | 전하선택 박막을 포함하는 실리콘 태양전지 및 이의 제조방법 | |
JP5388899B2 (ja) | 光電変換装置および光電変換装置の製造方法 | |
KR20160111623A (ko) | 태양 전지 | |
KR101867854B1 (ko) | 태양 전지 | |
KR20160111622A (ko) | 태양 전지 | |
WO2019235461A1 (ja) | 太陽電池素子 | |
CN117995924A (zh) | 叠层电池以及光伏组件 | |
KR20170039472A (ko) | 태양 전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161220 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20170321 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170426 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170926 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20171226 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180111 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20180703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181102 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20181113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190305 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190327 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6505627 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |