JP2012530378A - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 52
- 230000031700 light absorption Effects 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims description 43
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 30
- 238000004544 sputter deposition Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 239000011787 zinc oxide Substances 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000010408 film Substances 0.000 description 18
- 238000002834 transmittance Methods 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 239000011669 selenium Substances 0.000 description 10
- -1 aluminum ions Chemical class 0.000 description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052750 molybdenum Inorganic materials 0.000 description 8
- 239000011733 molybdenum Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000013077 target material Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000011734 sodium Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 150000003346 selenoethers Chemical class 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【選択図】図1
Description
Claims (20)
- 基板と、
前記基板の上に配置される後面電極層と、
前記後面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置される前面電極層と、を含み、
前記前面電極層は、
前記光吸収層の上に配置される第1導電層と、
前記第1導電層の上に配置される第2導電層と、
を含むことを特徴とする、太陽電池。 - 前記第1導電層及び前記第2導電層は同一の物質からなり、互いに異なるグレーンサイズを有することを特徴とする、請求項1に記載の太陽電池。
- 前記前面電極層は、前記第2導電層の上に配置される第3導電層を含むことを特徴とする、請求項2に記載の太陽電池。
- 前記第3導電層及び前記第2導電層は同一の物質からなり、互いに異なるグレーンサイズを有することを特徴とする、請求項3に記載の太陽電池。
- 前記前面電極層は前記第3導電層の上に配置される第4導電層を含み、
前記第3導電層及び前記第4導電層は同一の物質からなり、互いに異なるグレーンサイズを有することを特徴とする、請求項4に記載の太陽電池。 - 前記第2導電層のグレーンサイズ及び前記第4導電層のグレーンサイズは互いに対応し、
前記第1導電層のグレーンサイズ及び前記第3導電層のグレーンサイズは互いに対応することを特徴とする、請求項5に記載の太陽電池。 - 前記第1導電層のグレーンサイズは15nm乃至20nmであり、前記第2導電層のグレーンサイズは30nm乃至40nmであることを特徴とする、請求項2に記載の太陽電池。
- 前記第1導電層の厚さは前記前面電極層の厚さの5%乃至40%であり、
前記第2導電層の厚さは前記前面電極層の厚さの60%乃至95%であることを特徴とする、請求項1に記載の太陽電池。 - 前記第2導電層の厚さは300nm乃至1475nmであることを特徴とする、請求項1に記載の太陽電池。
- 基板と、
前記基板の上に配置される後面電極層と、
前記後面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置される多数個の導電層と、を含み、
前記導電層は同一の物質からなり、
互いに隣接する導電層は互いに異なるグレーンサイズを有することを特徴とする、太陽電池。 - 前記導電層の個数は3個乃至10個であることを特徴とする、請求項10に記載の太陽電池。
- 互いに隣接する導電層の間の屈折率は互いに異なることを特徴とする、請求項10に記載の太陽電池。
- 基板の上に後面電極層を形成するステップと、
前記後面電極層の上に光吸収層を形成するステップと、
前記光吸収層の上に第1電力を使用して第1導電層を形成するステップと、
前記第1導電層の上に第2電力を使用して第2導電層を形成するステップと、
を含むことを特徴とする、太陽電池の製造方法。 - 前記第2導電層の上に第3電力を使用して第3導電層を形成するステップを含むことを特徴とする、請求項13に記載の太陽電池の製造方法。
- 前記第3導電層の上に第4電力を使用して第4導電層を形成するステップを含むことを特徴とする、請求項14に記載の太陽電池の製造方法。
- 前記第1電力は前記第3電力に対応し、前記第2電力は前記第4電力に対応することを特徴とする、請求項15に記載の太陽電池の製造方法。
- 前記第1導電層を形成するためのターゲット及び前記第2導電層を形成するためのターゲットは同一の物質を含むことを特徴とする、請求項13に記載の太陽電池の製造方法。
- 前記第1導電層を形成するステップ及び前記第2導電層を形成するステップは、アルミニウムがドーピングされたジンクオキサイドターゲットを使用するスパッタリング工程により進行され、
前記第1電力は1kW/cm2乃至2kW/cm2であり、前記第2電力は4kW/cm2乃至10kW/cm2であることを特徴とする、請求項13に記載の太陽電池の製造方法。 - 前記第1導電層を形成するステップは第1圧力で進行され、
前記第2導電層を形成するステップは前記第1圧力より低い第2圧力で進行されることを特徴とする、請求項13に記載の太陽電池の製造方法。 - 前記第1電力は0.8kW/cm2乃至1.1kW/cm2であり、
前記第1導電層は5mtorr乃至8mtorrの圧力で形成され、
前記第2電力は3.1kW/cm2乃至3.9kW/cm2であり、
前記第2導電層は1mtorr乃至3mtorrの圧力で形成されることを特徴とする、請求項13に記載の太陽電池の製造方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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KR1020090053230A KR101028192B1 (ko) | 2009-06-16 | 2009-06-16 | 태양전지 및 이의 제조방법 |
KR10-2009-0053230 | 2009-06-16 | ||
KR1020090054724A KR101039993B1 (ko) | 2009-06-19 | 2009-06-19 | 태양전지 및 이의 제조방법 |
KR10-2009-0054724 | 2009-06-19 | ||
PCT/KR2010/003889 WO2010147393A2 (en) | 2009-06-16 | 2010-06-16 | Solar cell and method of fabricating the same |
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JP2012530378A true JP2012530378A (ja) | 2012-11-29 |
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US (1) | US20120037225A1 (ja) |
EP (1) | EP2417638A2 (ja) |
JP (1) | JP2012530378A (ja) |
CN (1) | CN102804399A (ja) |
WO (1) | WO2010147393A2 (ja) |
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KR101072089B1 (ko) * | 2009-09-30 | 2011-10-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101262573B1 (ko) * | 2011-07-29 | 2013-05-08 | 엘지이노텍 주식회사 | 태양전지 및 그의 제조방법 |
KR20130030903A (ko) * | 2011-09-20 | 2013-03-28 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101273059B1 (ko) * | 2011-09-20 | 2013-06-10 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조방법 |
KR101349484B1 (ko) * | 2011-11-29 | 2014-01-10 | 엘지이노텍 주식회사 | 태양전지 모듈 및 이의 제조방법 |
US20130153015A1 (en) * | 2011-12-15 | 2013-06-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming solar cells |
KR20150041927A (ko) * | 2013-10-10 | 2015-04-20 | 엘지이노텍 주식회사 | 태양전지 |
KR20150057808A (ko) * | 2013-11-20 | 2015-05-28 | 삼성에스디아이 주식회사 | 태양 전지 |
KR20170030311A (ko) * | 2015-09-09 | 2017-03-17 | 주식회사 무한 | 박막형 태양전지 및 그 제조 방법 |
CN106653897A (zh) * | 2015-11-04 | 2017-05-10 | 北京有色金属研究总院 | 一种铜锌锡硫硒薄膜太阳能电池及其制备方法 |
JP6600670B2 (ja) * | 2017-09-15 | 2019-10-30 | 株式会社東芝 | 光電変換素子、その製造方法、およびその製造装置 |
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WO2003009394A1 (en) * | 2001-07-18 | 2003-01-30 | Honda Giken Kogyo Kabushiki Kaisha | Method of film-forming transparent electrode layer and device therefor |
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JPH0614554B2 (ja) * | 1985-03-22 | 1994-02-23 | 工業技術院長 | 薄膜太陽電池の製造方法 |
JPH0864848A (ja) * | 1994-08-23 | 1996-03-08 | Canon Inc | 光電気変換装置、反射防止膜及び電極基板 |
JP3527815B2 (ja) * | 1996-11-08 | 2004-05-17 | 昭和シェル石油株式会社 | 薄膜太陽電池の透明導電膜の製造方法 |
JP2001093591A (ja) * | 1999-09-28 | 2001-04-06 | Toshiba Corp | 光電変換素子 |
JP4162447B2 (ja) * | 2001-09-28 | 2008-10-08 | 三洋電機株式会社 | 光起電力素子及び光起電力装置 |
JP4055053B2 (ja) * | 2002-03-26 | 2008-03-05 | 本田技研工業株式会社 | 化合物薄膜太陽電池およびその製造方法 |
JP2006344507A (ja) * | 2005-06-09 | 2006-12-21 | Saichi Kogyo Kk | 光電変換用電極及びその製造方法 |
KR100656738B1 (ko) * | 2005-12-14 | 2006-12-14 | 한국과학기술원 | 집적형 박막 태양전지 및 그 제조 방법 |
KR20080009346A (ko) * | 2006-07-24 | 2008-01-29 | 주식회사 엘지화학 | 태양전지 버퍼층의 제조방법 |
US20080115821A1 (en) * | 2006-11-22 | 2008-05-22 | Li Xu | Multilayer transparent conductive oxide for improved chemical processing |
-
2010
- 2010-06-16 CN CN2010800269164A patent/CN102804399A/zh active Pending
- 2010-06-16 US US13/266,588 patent/US20120037225A1/en not_active Abandoned
- 2010-06-16 JP JP2012515980A patent/JP2012530378A/ja active Pending
- 2010-06-16 EP EP10789720A patent/EP2417638A2/en not_active Withdrawn
- 2010-06-16 WO PCT/KR2010/003889 patent/WO2010147393A2/en active Application Filing
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JPS61141185A (ja) * | 1984-12-13 | 1986-06-28 | Fuji Electric Co Ltd | 光起電力素子の製造方法 |
JPH10310862A (ja) * | 1997-05-13 | 1998-11-24 | Canon Inc | 堆積膜製造方法及び光起電力素子の製造方法 |
JP3040373B2 (ja) * | 1998-03-27 | 2000-05-15 | 昭和シェル石油株式会社 | 薄膜太陽電池のZnO系透明導電膜の製造方法 |
WO2003009394A1 (en) * | 2001-07-18 | 2003-01-30 | Honda Giken Kogyo Kabushiki Kaisha | Method of film-forming transparent electrode layer and device therefor |
Also Published As
Publication number | Publication date |
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CN102804399A (zh) | 2012-11-28 |
US20120037225A1 (en) | 2012-02-16 |
EP2417638A2 (en) | 2012-02-15 |
WO2010147393A3 (en) | 2011-03-31 |
WO2010147393A2 (en) | 2010-12-23 |
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