JP2013510427A - 太陽電池及びその製造方法 - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
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- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000002950 deficient Effects 0.000 claims description 33
- 239000004020 conductor Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 13
- 238000000926 separation method Methods 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 27
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 15
- 239000011787 zinc oxide Substances 0.000 description 8
- 239000011669 selenium Substances 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
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- 239000003513 alkali Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
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- 239000004065 semiconductor Substances 0.000 description 2
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- 239000011701 zinc Substances 0.000 description 2
- -1 ITO Chemical compound 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Abstract
【解決手段】実施例による太陽電池は、基板の第1領域上に形成されて、後面電極パターン、光吸収層、バッファ層及び前面電極層をそれぞれ含む多数個の太陽電池セルと、前記基板の第2領域上に形成されて、前記多数個の太陽電池セルとそれぞれ電気的に連結されて、相互離隔されるように形成される金属膜パターンと、及び相互離隔されて形成された前記金属膜パターンの間に形成される連結部と、を含む。
【選択図】図1
Description
250 金属膜パターン
260 非晶質パターン
270 結晶質パターン
500 前面電極層
A 第1領域
B 第2領域
Claims (17)
- 基板の第1領域上に形成されて、後面電極パターン、光吸収層、バッファ層及び前面電極層をそれぞれ含む多数個の太陽電池セルと、
前記基板の第2領域上に形成されて、前記多数個の太陽電池セルとそれぞれ電気的に連結されて相互離隔されるように形成される金属膜パターンと、及び
相互離隔されて形成された前記金属膜パターンの間に形成される連結部と、を含む太陽電池。 - 前記金属膜パターンは、前記多数個の太陽電池セルの後面電極パターンとそれぞれ電気的に連結されることを特徴とする請求項1に記載の太陽電池。
- 前記連結部は、非晶質パターン及び結晶質パターンを含むことを特徴とする請求項1に記載の太陽電池。
- 前記結晶質パターンは、前記多数個の太陽電池セルのうちで不良セル領域と連結された金属膜パターンと電気的に接するように形成されることを特徴とする請求項3に記載の太陽電池。
- 前記多数個の太陽電池セルのうちで不良セル領域に対応する金属膜パターンと接する連結部は導電性物質を含み、前記導電性物質は導電性ペースト(paste)または導電性テープ(tape)であることを含むことを特徴とする請求項1に記載の太陽電池。
- 前記導電性ペーストは、シルバーペーストを含み、前記導電性テープは銅または炭素を含むことを特徴とする請求項5に記載の太陽電池。
- 前記金属膜パターンは、AlまたはCuを含むことを特徴とする請求項1に記載の太陽電池。
- 前記非晶質パターンは、Ge2Sb2Te5を含むことを特徴とする請求項3に記載の太陽電池。
- 前記前面電極層は、前記後面電極パターンと電気的に連結されることを特徴とする請求項1に記載の太陽電池。
- 前記多数個の太陽電池セルのうちで一つのセルの後面電極パターンと前記一つのセルと隣接するセルの上部電極を電気的に連結する接続配線をさらに含むことを特徴とする請求項1に記載の太陽電池。
- 前記接続配線は、透明な導電物質を含むことを特徴とする請求項10に記載の太陽電池。
- 基板上の第1領域にお互いに離隔されるように複数個の後面電極パターンを形成して、前記基板上の第2領域にそれぞれの前記後面電極パターンと連結されて、お互いに離隔されるように複数個の金属膜パターンを形成する段階と、
前記後面電極パターンが形成された前記基板の第1領域上に順にバッファ層及び光吸収層を形成する段階と、
前記バッファ層及び光吸収層を貫通するコンタクトパターンを形成する段階と、
前記コンタクトパターンを含む前記バッファ層及び光吸収層上に上部電極を形成した後、前記バッファ層、光吸収層及び上部電極を貫通して、前記後面電極パターンの一部が露出されて、単位セルに分けるための分離パターンを形成する段階と、及び
前記基板の第2領域上に形成されて、前記太陽電池セルのうちで不良セル領域の後面電極パターンを電気的に連結する段階を含み、
前記後面電極パターン、光吸収層、バッファ層及び前面電極層は、第1領域に形成されて、前記金属膜パターンと結晶質パターンは第2領域に形成されることを含むことを特徴とする太陽電池の製造方法。 - 前記分離パターンを形成した後、
前記基板の第2領域上に形成された前記金属膜パターンの間に非晶質パターンを形成する段階を含むことを特徴とする請求項12に記載の太陽電池の製造方法。 - 前記不良セル領域と対応する前記非晶質パターンにレーザー工程を進行させて、前記非晶質パターンを結晶質パターンに形成する段階を含み、
前記結晶質パターンによって前記不良セル領域の後面電極パターンだけ電気的に連結されることを含むことを特徴とする請求項13に記載の太陽電池の製造方法。 - 前記金属膜パターンは、AlまたはCuで形成され、前記非晶質パターンは、Ge2Sb2Te5で形成されることを含むことを特徴とする請求項13に記載の太陽電池の製造方法。
- 前記不良セル領域の後面電極パターンを電気的に連結する段階は、
前記不良セル領域と対応する前記金属膜パターンの間に導電性物質を形成する段階を含み、
前記導電性物質によって前記不良セル領域の後面電極パターンだけ電気的に連結されたことを含むことを特徴とする請求項12に記載の太陽電池の製造方法。 - 前記導電性物質は、導電性ペースト(paste)または導電性テープ(tape)で形成されたことを含むことを特徴とする請求項16に記載の太陽電池の製造方法。
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KR10-2009-0105421 | 2009-11-03 | ||
KR1020090105421A KR101091505B1 (ko) | 2009-11-03 | 2009-11-03 | 태양전지 및 이의 제조방법 |
PCT/KR2010/007649 WO2011055954A2 (ko) | 2009-11-03 | 2010-11-02 | 태양전지 및 이의 제조방법 |
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JP4993916B2 (ja) * | 2006-01-31 | 2012-08-08 | 昭和シェル石油株式会社 | Inハンダ被覆銅箔リボン導線及びその接続方法 |
KR20190057413A (ko) | 2013-07-11 | 2019-05-28 | 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 | 태양전지의 제조 방법 |
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- 2010-11-02 CN CN201080049922.1A patent/CN102598303B/zh not_active Expired - Fee Related
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KR20200030069A (ko) * | 2017-07-14 | 2020-03-19 | 커먼웰쓰 사이언티픽 앤드 인더스트리얼 리서치 오가니제이션 | 광전지 장치 및 방법 |
JP2020527322A (ja) * | 2017-07-14 | 2020-09-03 | コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼーション | 光起電装置および方法 |
JP7292254B2 (ja) | 2017-07-14 | 2023-06-16 | コモンウェルス サイエンティフィック アンド インダストリアル リサーチ オーガナイゼーション | 光起電装置および方法 |
KR102593979B1 (ko) | 2017-07-14 | 2023-10-26 | 커먼웰쓰 사이언티픽 앤드 인더스트리얼 리서치 오가니제이션 | 광전지 장치 및 방법 |
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Also Published As
Publication number | Publication date |
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KR20110048727A (ko) | 2011-05-12 |
US8802973B2 (en) | 2014-08-12 |
US20120204929A1 (en) | 2012-08-16 |
WO2011055954A2 (ko) | 2011-05-12 |
EP2439787A4 (en) | 2014-05-07 |
CN102598303A (zh) | 2012-07-18 |
CN102598303B (zh) | 2015-09-30 |
WO2011055954A3 (ko) | 2011-10-06 |
JP5624153B2 (ja) | 2014-11-12 |
KR101091505B1 (ko) | 2011-12-08 |
EP2439787A2 (en) | 2012-04-11 |
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