WO2011055954A3 - 태양전지 및 이의 제조방법 - Google Patents

태양전지 및 이의 제조방법 Download PDF

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Publication number
WO2011055954A3
WO2011055954A3 PCT/KR2010/007649 KR2010007649W WO2011055954A3 WO 2011055954 A3 WO2011055954 A3 WO 2011055954A3 KR 2010007649 W KR2010007649 W KR 2010007649W WO 2011055954 A3 WO2011055954 A3 WO 2011055954A3
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WO
WIPO (PCT)
Prior art keywords
solar battery
surface electrode
rear surface
manufacturing same
substrate
Prior art date
Application number
PCT/KR2010/007649
Other languages
English (en)
French (fr)
Other versions
WO2011055954A2 (ko
Inventor
김경암
Original Assignee
엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US13/379,885 priority Critical patent/US8802973B2/en
Priority to JP2012536706A priority patent/JP5624153B2/ja
Priority to CN201080049922.1A priority patent/CN102598303B/zh
Priority to EP10828489.4A priority patent/EP2439787A4/en
Publication of WO2011055954A2 publication Critical patent/WO2011055954A2/ko
Publication of WO2011055954A3 publication Critical patent/WO2011055954A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H01L31/02245—Electrode arrangements specially adapted for back-contact solar cells for metallisation wrap-through [MWT] type solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

실시예에 따른 태양전지는 기판의 제1영역 상에 형성되고, 후면전극 패턴, 광 흡수층, 버퍼층 및 전면전극층을 포함하는 다수개의 태양전지 셀들; 및 상기 기판의 제2영역 상에 형성되고, 상기 태양전지 셀들 중 불량셀 영역의 후면전극 패턴을 전기적으로 연결하는 금속막 패턴을 포함하며, 각각의 상기 후면전극 패턴은 상기 금속막 패턴에 의해 선택적으로 연결된 것을 포함한다.
PCT/KR2010/007649 2009-11-03 2010-11-02 태양전지 및 이의 제조방법 WO2011055954A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US13/379,885 US8802973B2 (en) 2009-11-03 2010-11-02 Solar battery and method for manufacturing the same
JP2012536706A JP5624153B2 (ja) 2009-11-03 2010-11-02 太陽電池及びその製造方法
CN201080049922.1A CN102598303B (zh) 2009-11-03 2010-11-02 太阳能电池及其制造方法
EP10828489.4A EP2439787A4 (en) 2009-11-03 2010-11-02 SOLAR BATTERY AND METHOD OF MANUFACTURING THE SAME

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020090105421A KR101091505B1 (ko) 2009-11-03 2009-11-03 태양전지 및 이의 제조방법
KR10-2009-0105421 2009-11-03

Publications (2)

Publication Number Publication Date
WO2011055954A2 WO2011055954A2 (ko) 2011-05-12
WO2011055954A3 true WO2011055954A3 (ko) 2011-10-06

Family

ID=43970523

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/007649 WO2011055954A2 (ko) 2009-11-03 2010-11-02 태양전지 및 이의 제조방법

Country Status (6)

Country Link
US (1) US8802973B2 (ko)
EP (1) EP2439787A4 (ko)
JP (1) JP5624153B2 (ko)
KR (1) KR101091505B1 (ko)
CN (1) CN102598303B (ko)
WO (1) WO2011055954A2 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4993916B2 (ja) * 2006-01-31 2012-08-08 昭和シェル石油株式会社 Ｉｎハンダ被覆銅箔リボン導線及びその接続方法
KR20160017034A (ko) 2013-07-11 2016-02-15 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 태양전지의 제조 방법
US11881361B2 (en) 2017-07-14 2024-01-23 Commonwealth Scientific And Industrial Research Organisation Photovoltaic apparatus and method
DE102018001181B3 (de) * 2018-02-15 2019-07-11 Azur Space Solar Power Gmbh Sonnenstandssensor

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JP2003124484A (ja) * 2001-10-10 2003-04-25 Seiko Epson Corp 光電変換素子の製造方法および光電変換素子
KR20090097777A (ko) * 2008-03-12 2009-09-16 삼성전자주식회사 태양 에너지 모듈, 이를 갖는 태양 에너지 어셈블리, 태양 에너지 모듈의 리페어 방법 및 태양 에너지 어셈블리의 조율 방법
KR20100095928A (ko) * 2009-02-23 2010-09-01 삼성전자주식회사 태양 전지 모듈 및 그 수리 방법

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JPS5848475A (ja) 1981-09-18 1983-03-22 Konishiroku Photo Ind Co Ltd アモルフアスシリコン太陽電池及びその製造方法
JPS5848474A (ja) * 1981-09-18 1983-03-22 Konishiroku Photo Ind Co Ltd アモルフアスシリコン太陽電池及びその製造方法
JP2003158282A (ja) * 2001-08-30 2003-05-30 Canon Inc 太陽光発電システム
JP2003273383A (ja) * 2002-03-15 2003-09-26 Sharp Corp 太陽電池素子およびその製造方法
JP2004103959A (ja) * 2002-09-11 2004-04-02 Matsushita Electric Ind Co Ltd 太陽電池およびその製造方法
EP1734589B1 (en) * 2005-06-16 2019-12-18 Panasonic Intellectual Property Management Co., Ltd. Method for manufacturing photovoltaic module
US8125613B2 (en) 2006-04-21 2012-02-28 Nikon Corporation Exposure apparatus, exposure method, and device manufacturing method
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Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003124484A (ja) * 2001-10-10 2003-04-25 Seiko Epson Corp 光電変換素子の製造方法および光電変換素子
KR20090097777A (ko) * 2008-03-12 2009-09-16 삼성전자주식회사 태양 에너지 모듈, 이를 갖는 태양 에너지 어셈블리, 태양 에너지 모듈의 리페어 방법 및 태양 에너지 어셈블리의 조율 방법
KR20100095928A (ko) * 2009-02-23 2010-09-01 삼성전자주식회사 태양 전지 모듈 및 그 수리 방법

Non-Patent Citations (1)

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Title
See also references of EP2439787A4 *

Also Published As

Publication number Publication date
KR20110048727A (ko) 2011-05-12
JP5624153B2 (ja) 2014-11-12
KR101091505B1 (ko) 2011-12-08
CN102598303B (zh) 2015-09-30
JP2013510427A (ja) 2013-03-21
EP2439787A4 (en) 2014-05-07
US20120204929A1 (en) 2012-08-16
US8802973B2 (en) 2014-08-12
WO2011055954A2 (ko) 2011-05-12
EP2439787A2 (en) 2012-04-11
CN102598303A (zh) 2012-07-18

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