JP2018117125A - 異種接合太陽電池及びその製造方法 - Google Patents
異種接合太陽電池及びその製造方法 Download PDFInfo
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- JP2018117125A JP2018117125A JP2018005362A JP2018005362A JP2018117125A JP 2018117125 A JP2018117125 A JP 2018117125A JP 2018005362 A JP2018005362 A JP 2018005362A JP 2018005362 A JP2018005362 A JP 2018005362A JP 2018117125 A JP2018117125 A JP 2018117125A
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- transparent conductive
- electrode
- solar cell
- oxide layer
- layer
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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Abstract
Description
異なる物質で形成される場合、銅粒子の拡散を防止しない金属酸化物材質で形成された金属酸化物層と電極部の間に位置する透明導電性酸化物層は、IWOで形成され、銅粒子の拡散を防止することができる金属酸化物材質(酸化タングステン及び酸化ニッケル)で形成された金属酸化物層と電極部との間に位置する透明導電性酸化物層はITO、IZO、及びAZOの内から選択されたいずれか1つの物質で形成されることができる。
Claims (10)
- 半導体基板上に金属化合物をコーティングする段階と、
前記金属化合物上に透明導電性酸化物をコーティングする段階と
前記透明導電性酸化物上に電極形成物質をコーティングする段階と、
前記電極形成物質を光焼結(light sintering)の方法により焼結して電極部を形成する段階と
を含み、
前記透明導電性酸化物も光焼結方法により焼結して、前記透明導電性酸化物で形成された透明導電性酸化物層を形成する異種接合太陽電池の製造方法。 - 前記透明導電性酸化物と前記電極形成物質を一緒に光焼結するとき、前記金属化合物も一緒に光焼結して、前記金属化合物で形成された、金属化合物層、前記透明導電性酸化物層及び前記電極部を同時に形成する、請求項1に記載の異種接合太陽電池の製造方法。
- 前記金属酸化物と前記透明導電性酸化物を光焼結して前記金属化合物で形成された、金属化合物層と前記透明導電性酸化物層を先に形成した後、前記電極形成物質を形成、乾燥及び光焼結して前記電極部を形成する、請求項1に記載の異種接合太陽電池の製造方法。
- 前記光焼結は5J/cm2〜500J/cm2のエネルギー(E)、0.1ms〜50msのパルス幅(W)、1番〜100番のパルス数(N)、及び1ms乃至100msのパルスギャップを有するキセノンフラッシュランプを用いて実施する、請求項2または3に記載の異種接合太陽電池の製造方法。
- 前記金属化合物と前記透明導電性酸化物の光焼結は、前記キセノンフラッシュランプを使用して実施し、前記キセノンフラッシュランプのエネルギーを、前記電極形成物質を光焼結する際に使用するエネルギー以下のエネルギーで行う、請求項4に記載の異種接合太陽電池の製造方法。
- 前記金属化合物は、
酸化モリブデン、酸化チタン、酸化バナジウム、酸化タングステン、酸化亜鉛、酸化マンガン、酸化ニッケル、及び酸化クロムの内から選択されたいずれか1つの2成分系金属酸化物で形成する、請求項1に記載の異種接合太陽電池の製造方法。 - 前記透明導電性酸化物は、ITO、IWO、IZO、及びAZOの内から選択されたいずれか1つの物質で形成する、請求項6に記載の異種接合太陽電池の製造方法。
- 前記電極形成物質は、銅、銅‐銀、及び銅‐ニッケルの内から選ばれた少なくとも一種類の微細金属粒子と、バインダー及び溶剤を含む導電性ペーストで形成する、請求項6に記載の異種接合太陽電池の製造方法。
- 前記微細金属粒子は、マイクロまたはナノの大きさで形成し、前記ペーストは、前記微細金属粒子と前記バインダー及び前記溶剤を前記ペースト又は前記インクの全重量に対して50〜80重量%、15〜40重量%、及び5〜40重量%で混合して形成する、請求項8に記載の異種接合太陽電池の製造方法。
- 前記半導体基板上に前記金属化合物をコーティングする前に、前記半導体基板上にトンネル層を形成する段階をさらに含み、
前記トンネル層は、真性非晶質シリコンまたは酸化シリコンで形成する、請求項6に記載の異種接合太陽電池の製造方法。
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