JP2016072623A - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
JP2016072623A
JP2016072623A JP2015186596A JP2015186596A JP2016072623A JP 2016072623 A JP2016072623 A JP 2016072623A JP 2015186596 A JP2015186596 A JP 2015186596A JP 2015186596 A JP2015186596 A JP 2015186596A JP 2016072623 A JP2016072623 A JP 2016072623A
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circuit
transistor
layer
oxide semiconductor
semiconductor layer
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JP2016072623A5 (enExample
Inventor
池田　隆之
Takayuki Ikeda
隆之 池田
黒川　義元
Yoshimoto Kurokawa
義元 黒川
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1892—Direct radiation image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/121—Active materials comprising only selenium or only tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/60—Thermal-PV hybrids

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Thin Film Transistor (AREA)
  • Eye Examination Apparatus (AREA)
  • Fluid-Damping Devices (AREA)
  • Vehicle Body Suspensions (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
JP2015186596A 2014-09-26 2015-09-24 撮像装置 Withdrawn JP2016072623A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014196247 2014-09-26
JP2014196247 2014-09-26

Related Child Applications (1)

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JP2020189297A Division JP6845968B2 (ja) 2014-09-26 2020-11-13 撮像装置

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JP2016072623A true JP2016072623A (ja) 2016-05-09
JP2016072623A5 JP2016072623A5 (enExample) 2018-11-01

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JP2015186596A Withdrawn JP2016072623A (ja) 2014-09-26 2015-09-24 撮像装置
JP2020189297A Active JP6845968B2 (ja) 2014-09-26 2020-11-13 撮像装置
JP2021030031A Active JP7142120B2 (ja) 2014-09-26 2021-02-26 撮像装置
JP2022144606A Withdrawn JP2022173277A (ja) 2014-09-26 2022-09-12 撮像装置
JP2024150463A Withdrawn JP2024163178A (ja) 2014-09-26 2024-09-02 撮像装置

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JP2021030031A Active JP7142120B2 (ja) 2014-09-26 2021-02-26 撮像装置
JP2022144606A Withdrawn JP2022173277A (ja) 2014-09-26 2022-09-12 撮像装置
JP2024150463A Withdrawn JP2024163178A (ja) 2014-09-26 2024-09-02 撮像装置

Country Status (4)

Country Link
US (2) US9748291B2 (enExample)
JP (5) JP2016072623A (enExample)
TW (3) TWI792119B (enExample)
WO (1) WO2016046685A1 (enExample)

Cited By (4)

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DE112017001010T5 (de) 2016-02-25 2018-11-22 Mitsubishi Hitachi Power Systems, Ltd. Kondensator und mit demselben versehene dampfturbinenanlage
JP2020516056A (ja) * 2017-03-16 2020-05-28 ピクスクアンタ リミテッドＰｉｘｑｕａｎｔａ Ｌｉｍｉｔｅｄ 電磁放射線検出装置
JP2020526020A (ja) * 2017-06-26 2020-08-27 ネーデルランドセ・オルガニサティ・フォール・トゥーヘパスト−ナトゥールウェテンスハッペライク・オンデルズーク・テーエヌオー 光検出器アレイ、その製造方法、及び光検出器アレイを含む撮像デバイス
JP2023014361A (ja) * 2017-11-24 2023-01-26 株式会社半導体エネルギー研究所 トランジスタ

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JP6685240B2 (ja) 2015-01-27 2020-04-22 株式会社半導体エネルギー研究所 乗員保護装置
TWI710124B (zh) 2015-01-30 2020-11-11 日商半導體能源研究所股份有限公司 成像裝置及電子裝置
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TWI738569B (zh) 2015-07-07 2021-09-01 日商半導體能源研究所股份有限公司 成像裝置及其運作方法
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KR102698685B1 (ko) 2015-09-10 2024-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치, 모듈, 전자 기기, 및 촬상 장치의 동작 방법
JP6202512B1 (ja) * 2015-12-03 2017-09-27 パナソニックＩｐマネジメント株式会社 撮像装置
US10020336B2 (en) 2015-12-28 2018-07-10 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device using three dimentional (3D) integration
JP2018074077A (ja) * 2016-11-02 2018-05-10 ソニー株式会社 撮像素子、固体撮像装置及び電子デバイス
TWI653752B (zh) 2018-03-28 2019-03-11 英屬開曼群島商錼創科技股份有限公司 發光二極體顯示面板及其製造方法
US11257956B2 (en) 2018-03-30 2022-02-22 Intel Corporation Thin film transistor with selectively doped oxide thin film
US11362215B2 (en) 2018-03-30 2022-06-14 Intel Corporation Top-gate doped thin film transistor
US12002823B2 (en) 2018-07-03 2024-06-04 Sony Semiconductor Solutions Corporation Solid-state image sensor with imaging device blocks that each include imaging devices
WO2020026636A1 (ja) * 2018-07-30 2020-02-06 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子及び電子装置
CN112840639B (zh) 2018-10-11 2024-10-15 株式会社半导体能源研究所 摄像装置及电子设备
TWI728504B (zh) * 2018-11-13 2021-05-21 日商索尼半導體解決方案公司 固體攝像元件、固體攝像裝置及電子機器
KR102710266B1 (ko) 2019-01-07 2024-09-27 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JPWO2020229917A1 (enExample) * 2019-05-10 2020-11-19
KR102674960B1 (ko) 2019-05-30 2024-06-17 삼성전자주식회사 이미지 센서 및 이의 제조 방법
US12376410B2 (en) 2019-07-04 2025-07-29 Semiconductor Energy Laboratory Co., Ltd. Imaging device with embedded conductive layers
JP7596258B2 (ja) 2019-09-13 2024-12-09 株式会社半導体エネルギー研究所 撮像装置、及びその駆動方法
CN111244119B (zh) * 2019-12-13 2024-09-10 京东方科技集团股份有限公司 一种探测基板、其制作方法及平板探测器
US12120446B2 (en) 2020-07-24 2024-10-15 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
KR20220032923A (ko) 2020-09-08 2022-03-15 삼성전자주식회사 이미지 센서
CN116075943A (zh) * 2020-09-25 2023-05-05 株式会社半导体能源研究所 摄像装置及电子设备
JP7466475B2 (ja) 2021-02-03 2024-04-12 オークマ株式会社 リニアモータ
JP2023016007A (ja) 2021-07-20 2023-02-01 株式会社半導体エネルギー研究所 表示装置および電子装置
CN115000109B (zh) * 2022-06-08 2025-03-14 京东方科技集团股份有限公司 射线探测器及射线探测设备

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JP2023014361A (ja) * 2017-11-24 2023-01-26 株式会社半導体エネルギー研究所 トランジスタ
JP7493576B2 (ja) 2017-11-24 2024-05-31 株式会社半導体エネルギー研究所 トランジスタ

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