JP2015530477A - 基板加熱装置及びプロセスチャンバー - Google Patents
基板加熱装置及びプロセスチャンバー Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 160
- 239000000758 substrate Substances 0.000 title claims abstract description 154
- 238000010438 heat treatment Methods 0.000 title claims abstract description 90
- 238000002347 injection Methods 0.000 claims abstract description 10
- 239000007924 injection Substances 0.000 claims abstract description 10
- 230000003028 elevating effect Effects 0.000 claims description 11
- 238000000926 separation method Methods 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 115
- 238000000231 atomic layer deposition Methods 0.000 description 24
- 238000005229 chemical vapour deposition Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 9
- 238000007599 discharging Methods 0.000 description 5
- 238000010926 purge Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- C23C16/45523—Pulsed gas flow or change of composition over time
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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Abstract
Description
Claims (20)
- 複数枚の基板が上下に互いに離隔して積層されるボートと、内部空間に前記ボートが位置し、前記ボートに互いに離隔して積層された基板の間に内部の側壁の噴射孔を介して工程ガスを流し込むチャンバーハウジングと、を備えるプロセスチャンバーの基板加熱装置において、
前記ボートの下部において熱を発生させて基板を加熱する第1の加熱体を備える基板加熱装置。 - 前記ボートは、
上部プレートと、
下部プレートと、
前記上部プレートと前記下部プレートとを繋ぐ複数の支持棒と、
前記支持棒の側壁に形成される複数枚の基板載置溝と、
を備える請求項1に記載の基板加熱装置。 - 前記第1の加熱体は、前記下部プレートの上部面または前記上部プレートの下部面に形成されている請求項2に記載の基板加熱装置。
- 前記第1の加熱体は、前記下部プレートの内部または前記上部プレートの内部に埋め込まれて形成されている請求項2に記載の基板加熱装置。
- 前記ボート昇降手段は、
前記下部プレートを支持するボート支持台と、
前記下層チャンバーハウジングの底面を貫通して前記ボート支持台を昇降させる昇降回転駆動軸と、
を備える請求項2に記載の基板加熱装置。 - 前記第1の加熱体は、
前記下部プレートと前記ボート支持台とを互いに離隔させて繋ぐ支持軸と、
前記支持軸により固定され、前記下部プレートと前記ボート支持台との間の離隔空間に水平に形成される加熱プレートと、
を備える請求項5に記載の基板加熱装置。 - 前記チャンバーハウジングの壁体において熱を発生させて基板を加熱する第2の加熱体を備える請求項1に記載の基板加熱装置。
- 前記第2の加熱体は、熱線である請求項7に記載の基板加熱装置。
- 前記熱線は、前記チャンバーハウジングの内側壁から突設される請求項8に記載の基板加熱装置。
- 前記熱線は、前記チャンバーハウジングの壁体に埋め込まれて形成されている請求項8に記載の基板加熱装置。
- 前記熱線は、前記チャンバーハウジングの壁体の領域別に異なる温度調節が行われる請求項9から請求項10のうちのいずれか一項に記載の基板加熱装置。
- 複数枚の基板が上下に互いに離隔して積層されるボートと、
前記ボートを上昇させて内部空間に位置させ、側壁から工程ガスを水平方向に噴射し、この工程ガスを互いに離隔して積層された基板の間に流し込んで外部に排出するようにするチャンバーハウジングと、
前記ボートを前記チャンバーハウジングの内部に昇降させるボート昇降手段と、
前記チャンバーハウジングの一方の側壁が貫通される基板搬送ゲートと、
前記チャンバーハウジングの内部空間のボートに互いに離隔して積層された基板を加熱する加熱手段と、
を備えるプロセスチャンバー。 - 前記チャンバーハウジングは、
内部空間である第1の内部空間を有する下層チャンバーハウジングと、
前記下層チャンバーハウジングの上層に配設され、内部空間である第2の内部空間を有し、一方の内壁から工程ガスを噴射してボートに互いに離隔して積層された基板の間に流し込んで外部に排出するようにする上層チャンバーハウジングと、
を備える請求項12に記載のプロセスチャンバー。 - 前記加熱手段は、前記ボートの下部において熱を発生させて基板を加熱する第1の加熱体である請求項13に記載のプロセスチャンバー。
- 前記ボートは、
上部プレートと、
下部プレートと、
前記上部プレートと前記下部プレートとを繋ぐ複数の支持棒と、
前記支持棒の側壁に形成される複数枚の基板載置溝と、
を備える請求項14に記載のプロセスチャンバー。 - 前記第1の加熱体は、前記下部プレートの上部面または前記上部プレートの下部面に形成されている請求項15に記載のプロセスチャンバー。
- 前記第1の加熱体は、前記下部プレートの内部または前記上部プレートの内部に埋め込まれて形成されている請求項15に記載のプロセスチャンバー。
- 前記ボート昇降手段は、
前記下部プレートを支持するボート支持台と、
前記下層チャンバーハウジングの底面を貫通して前記ボート支持台を昇降させる昇降回転駆動軸と、
を備える請求項15に記載のプロセスチャンバー。 - 前記第1の加熱体は、
前記下部プレートと前記ボート支持台とを互いに離隔させて繋ぐ支持軸と、
前記支持軸により固定され、前記下部プレートと前記ボート支持台との間の離隔空間に水平に形成される加熱プレートと、
を備える請求項18に記載のプロセスチャンバー。 - 前記チャンバーハウジングの壁体において熱を発生させて基板を加熱する第2の加熱体を備える請求項13に記載のプロセスチャンバー。
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Application Number | Priority Date | Filing Date | Title |
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KR1020120069226A KR101224520B1 (ko) | 2012-06-27 | 2012-06-27 | 프로세스 챔버 |
KR10-2012-0069226 | 2012-06-27 | ||
PCT/KR2013/002749 WO2014003297A1 (ko) | 2012-06-27 | 2013-04-03 | 기판 가열 장치 및 프로세스 챔버 |
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JP2015530477A true JP2015530477A (ja) | 2015-10-15 |
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JP2015519997A Pending JP2015530477A (ja) | 2012-06-27 | 2013-04-03 | 基板加熱装置及びプロセスチャンバー |
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US (1) | US20150159272A1 (ja) |
JP (1) | JP2015530477A (ja) |
KR (1) | KR101224520B1 (ja) |
CN (1) | CN104620354A (ja) |
WO (1) | WO2014003297A1 (ja) |
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Also Published As
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KR101224520B1 (ko) | 2013-01-22 |
WO2014003297A1 (ko) | 2014-01-03 |
US20150159272A1 (en) | 2015-06-11 |
CN104620354A (zh) | 2015-05-13 |
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