JP2015517676A5 - - Google Patents

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Publication number
JP2015517676A5
JP2015517676A5 JP2015514131A JP2015514131A JP2015517676A5 JP 2015517676 A5 JP2015517676 A5 JP 2015517676A5 JP 2015514131 A JP2015514131 A JP 2015514131A JP 2015514131 A JP2015514131 A JP 2015514131A JP 2015517676 A5 JP2015517676 A5 JP 2015517676A5
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Japan
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stage
ion beam
beam column
controller
operations
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JP2015514131A
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Japanese (ja)
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JP6188792B2 (ja
JP2015517676A (ja
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Priority claimed from PCT/US2013/042090 external-priority patent/WO2013177209A1/en
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Publication of JP2015517676A5 publication Critical patent/JP2015517676A5/ja
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JP2015514131A 2012-05-21 2013-05-21 Ｔｅｍ観察用の薄片の調製 Active JP6188792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261649917P 2012-05-21 2012-05-21
US61/649,917 2012-05-21
PCT/US2013/042090 WO2013177209A1 (en) 2012-05-21 2013-05-21 Preparation of lamellae for tem viewing

Publications (3)

Publication Number Publication Date
JP2015517676A JP2015517676A (ja) 2015-06-22
JP2015517676A5 true JP2015517676A5 (enExample) 2016-06-23
JP6188792B2 JP6188792B2 (ja) 2017-08-30

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JP2015514131A Active JP6188792B2 (ja) 2012-05-21 2013-05-21 Ｔｅｍ観察用の薄片の調製

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US (1) US10068749B2 (enExample)
EP (1) EP2852967B1 (enExample)
JP (1) JP6188792B2 (enExample)
CN (1) CN104303257B (enExample)
WO (1) WO2013177209A1 (enExample)

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US10748290B2 (en) * 2018-10-31 2020-08-18 Fei Company Smart metrology on microscope images
CN110082177B (zh) * 2019-04-17 2022-01-25 宸鸿科技(厦门)有限公司 晶体电子元件在tem制样过程中造成辐照损伤的清洁方法
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US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
CN110579495B (zh) * 2019-10-23 2022-06-28 长江存储科技有限责任公司 一种tem样品及其制备方法
JP7512849B2 (ja) * 2019-11-22 2024-07-09 住友金属鉱山株式会社 透過電子顕微鏡観察用試料とその作製方法
CN110926898A (zh) * 2019-12-09 2020-03-27 中国工程物理研究院化工材料研究所 一种电子束敏感脆性材料透射电镜样品制备方法
CN111238894B (zh) * 2020-02-03 2023-02-28 天津理工大学 一种原位电学tem样品的制备方法
US11355313B2 (en) * 2020-06-30 2022-06-07 Fei Company Line-based endpoint detection
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