JP2013541845A5 - - Google Patents

Download PDF

Info

Publication number
JP2013541845A5
JP2013541845A5 JP2013531767A JP2013531767A JP2013541845A5 JP 2013541845 A5 JP2013541845 A5 JP 2013541845A5 JP 2013531767 A JP2013531767 A JP 2013531767A JP 2013531767 A JP2013531767 A JP 2013531767A JP 2013541845 A5 JP2013541845 A5 JP 2013541845A5
Authority
JP
Japan
Prior art keywords
angle
ion
substrate
sidewall
irradiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013531767A
Other languages
English (en)
Japanese (ja)
Other versions
JP5858496B2 (ja
JP2013541845A (ja
Filing date
Publication date
Priority claimed from US12/896,046 external-priority patent/US8133804B1/en
Application filed filed Critical
Publication of JP2013541845A publication Critical patent/JP2013541845A/ja
Publication of JP2013541845A5 publication Critical patent/JP2013541845A5/ja
Application granted granted Critical
Publication of JP5858496B2 publication Critical patent/JP5858496B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013531767A 2010-10-01 2011-09-28 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム Active JP5858496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/896,046 US8133804B1 (en) 2010-10-01 2010-10-01 Method and system for modifying patterned photoresist using multi-step ion implantation
US12/896,046 2010-10-01
PCT/US2011/053666 WO2012044677A1 (en) 2010-10-01 2011-09-28 Method and system for modifying patterned photoresist using multi-step ion implantion

Publications (3)

Publication Number Publication Date
JP2013541845A JP2013541845A (ja) 2013-11-14
JP2013541845A5 true JP2013541845A5 (enExample) 2014-07-10
JP5858496B2 JP5858496B2 (ja) 2016-02-10

Family

ID=44906363

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013531767A Active JP5858496B2 (ja) 2010-10-01 2011-09-28 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム

Country Status (6)

Country Link
US (1) US8133804B1 (enExample)
JP (1) JP5858496B2 (enExample)
KR (1) KR101872708B1 (enExample)
CN (1) CN103155090B (enExample)
TW (1) TWI520181B (enExample)
WO (1) WO2012044677A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8974683B2 (en) * 2011-09-09 2015-03-10 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying resist openings using multiple angled ions
WO2014002336A1 (ja) * 2012-06-29 2014-01-03 キヤノンアネルバ株式会社 イオンビーム処理方法およびイオンビーム処理装置
CN104345568A (zh) * 2013-08-07 2015-02-11 中芯国际集成电路制造(上海)有限公司 减小光刻胶图形线宽粗糙度的方法
US20160064239A1 (en) * 2014-08-28 2016-03-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method for Integrated Circuit Patterning
US9512517B2 (en) 2015-01-23 2016-12-06 Varian Semiconductor Equipment Associates, Inc. Multiple exposure treatment for processing a patterning feature
CN106298929B (zh) * 2015-06-12 2019-11-01 中芯国际集成电路制造(上海)有限公司 鳍式场效应管的形成方法
KR20170016107A (ko) * 2015-08-03 2017-02-13 삼성전자주식회사 반도체 장치 제조 방법
CN105632981A (zh) * 2016-03-19 2016-06-01 复旦大学 一种利用热处理减小微电子器件表面粗糙度的仪器
CN105789044A (zh) * 2016-03-19 2016-07-20 复旦大学 一种利用热处理减小微电子器件表面粗糙度的方法
US10658184B2 (en) 2016-12-15 2020-05-19 Taiwan Semiconductor Manufacturing Co., Ltd. Pattern fidelity enhancement with directional patterning technology
US10310379B2 (en) * 2017-01-13 2019-06-04 Varian Semiconductor Equipment Associates, Inc. Multiple patterning approach using ion implantation
US10147584B2 (en) * 2017-03-20 2018-12-04 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for decelerated ion beam with no energy contamination
KR102491093B1 (ko) 2017-08-21 2023-01-20 삼성전자주식회사 패턴 형성 방법
US10522349B2 (en) 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US10818473B2 (en) * 2018-08-14 2020-10-27 Taiwan Semiconductor Manufacturing Co., Ltd. Implanter calibration
KR102687231B1 (ko) * 2020-03-30 2024-07-22 주식회사 히타치하이테크 하전 입자선 장치 및 조도 지표 산출 방법
US11635695B2 (en) * 2020-06-15 2023-04-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing line-end space in integrated circuit patterning
CN111755326A (zh) * 2020-06-29 2020-10-09 西安微电子技术研究所 一种解决7度角注入工艺中硅衬底起皮缺陷的方法
US12354873B2 (en) * 2020-09-30 2025-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for multiple step directional patterning
US11854818B2 (en) * 2021-05-04 2023-12-26 Applied Materials, Inc. Angled etch for surface smoothing
US20220399272A1 (en) * 2021-06-14 2022-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. System and method to reduce layout dimensions using non-perpendicular process scheme
US12198931B2 (en) * 2022-04-14 2025-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Ion implantation method for reducing roughness of patterned resist lines
US20240194540A1 (en) * 2022-12-08 2024-06-13 Applied Materials, Inc. Two step implant to improve line edge roughness and line width roughness

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100272159B1 (ko) * 1993-11-24 2000-11-15 윤종용 대칭적 이온 주입 방법
JP2000235969A (ja) * 1999-02-15 2000-08-29 Sony Corp 半導体装置の製造方法
JP4060659B2 (ja) * 2002-07-24 2008-03-12 株式会社東芝 パターン形成方法、及び基板処理装置
US20040087153A1 (en) * 2002-10-31 2004-05-06 Yan Du Method of etching a silicon-containing dielectric material
JP3963846B2 (ja) * 2003-01-30 2007-08-22 東京エレクトロン株式会社 熱的処理方法および熱的処理装置
JP4213533B2 (ja) * 2003-07-17 2009-01-21 富士通株式会社 スリミング製造方法およびスリミングシステム
CN100440450C (zh) * 2003-09-30 2008-12-03 日本航空电子工业株式会社 固体表面平坦化方法及其装置
US7291563B2 (en) * 2005-08-18 2007-11-06 Micron Technology, Inc. Method of etching a substrate; method of forming a feature on a substrate; and method of depositing a layer comprising silicon, carbon, and fluorine onto a semiconductor substrate
WO2008054013A1 (fr) * 2006-10-30 2008-05-08 Japan Aviation Electronics Industry Limited Procédé de façonnage d'une surface solide faisant intervenir un faisceau ionique à agrégats gazeux
US20100096566A1 (en) * 2008-10-20 2010-04-22 Robert Bristol Reducing Line Edge Roughness by Particle Beam Exposure

Similar Documents

Publication Publication Date Title
JP2013541845A5 (enExample)
JP5858496B2 (ja) 多段階イオン注入を利用してパターニングされたフォトレジストを修正する方法およびシステム
Möller TRI3DYN–Collisional computer simulation of the dynamic evolution of 3-dimensional nanostructures under ion irradiation
US8698109B2 (en) Method and system for controlling critical dimension and roughness in resist features
JP2015517676A5 (enExample)
JP2014515889A5 (enExample)
PH12015501621A1 (en) Process for treatment by a beam of mono- or multicharged ions of a gas to produce antireflective glass materials
TW201145354A (en) Method and system for modifying substrate relief features using ion implantation
JP2015111668A5 (enExample)
US10310379B2 (en) Multiple patterning approach using ion implantation
JP2010021041A (ja) イオン注入装置のウェーハ保持具
US9659784B1 (en) Ion-assisted deposition and implantation of photoresist to improve line edge roughness
JP2018508815A5 (enExample)
CN102254808B (zh) 减小ler的方法及实施该方法的装置
KR102309247B1 (ko) 레이저빔 조사 장치 및 이를 포함하는 기판 처리 시스템, 기판 처리 방법
JP5246474B2 (ja) ミリング装置及びミリング方法
TW202022931A (zh) 形成半導體器件的方法及處理半導體器件的方法
CN103441071B (zh) 多晶硅栅干法刻蚀中收缩关键尺寸的方法
Kozawa Relationship between absorption coefficient and line edge roughness of chemically amplified resists used for extreme ultraviolet lithography
US9520290B1 (en) Ion implantation for improved etch performance
JP2012243992A5 (enExample)
JP2014510811A (ja) イオン衝撃を使用して基板の表面を修正する方法
CN103871844B (zh) 用于改善图形化蓝宝石衬底的底部刻蚀异常的方法
SG11201907049YA (en) Process for treatment with a beam of ions in order to produce a scratch-resistant high-transmittance antireflective sapphire
US20150228842A1 (en) Complementary Traveling Masks