JP2002289584A5 - - Google Patents

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Publication number
JP2002289584A5
JP2002289584A5 JP2001088888A JP2001088888A JP2002289584A5 JP 2002289584 A5 JP2002289584 A5 JP 2002289584A5 JP 2001088888 A JP2001088888 A JP 2001088888A JP 2001088888 A JP2001088888 A JP 2001088888A JP 2002289584 A5 JP2002289584 A5 JP 2002289584A5
Authority
JP
Japan
Prior art keywords
ions
neutralizing
irradiated
shielding
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001088888A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289584A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001088888A priority Critical patent/JP2002289584A/ja
Priority claimed from JP2001088888A external-priority patent/JP2002289584A/ja
Priority to US10/471,743 priority patent/US6909087B2/en
Priority to PCT/JP2002/002751 priority patent/WO2002078044A2/en
Priority to TW091105701A priority patent/TW541572B/zh
Publication of JP2002289584A publication Critical patent/JP2002289584A/ja
Publication of JP2002289584A5 publication Critical patent/JP2002289584A5/ja
Pending legal-status Critical Current

Links

JP2001088888A 2001-03-26 2001-03-26 表面処理方法 Pending JP2002289584A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001088888A JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法
US10/471,743 US6909087B2 (en) 2001-03-26 2002-03-22 Method of processing a surface of a workpiece
PCT/JP2002/002751 WO2002078044A2 (en) 2001-03-26 2002-03-22 Method of processing a surface of a workpiece
TW091105701A TW541572B (en) 2001-03-26 2002-03-25 Method of processing a surface of a workpiece with use of positive and negative ions generated in plasma or neutral particles generated by the positive and negative ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001088888A JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法

Publications (2)

Publication Number Publication Date
JP2002289584A JP2002289584A (ja) 2002-10-04
JP2002289584A5 true JP2002289584A5 (enExample) 2004-12-24

Family

ID=18943908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001088888A Pending JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法

Country Status (4)

Country Link
US (1) US6909087B2 (enExample)
JP (1) JP2002289584A (enExample)
TW (1) TW541572B (enExample)
WO (1) WO2002078044A2 (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
JP2011199297A (ja) * 2004-07-07 2011-10-06 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
KR100698614B1 (ko) * 2005-07-29 2007-03-22 삼성전자주식회사 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템
KR100653073B1 (ko) * 2005-09-28 2006-12-01 삼성전자주식회사 기판처리장치와 기판처리방법
GB2437820B (en) 2006-04-27 2011-06-22 Matsushita Electric Industrial Co Ltd Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus
US7772544B2 (en) * 2007-10-09 2010-08-10 Tokyo Electron Limited Neutral beam source and method for plasma heating
EP2160081A1 (en) * 2008-08-27 2010-03-03 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Non-thermal plasma for wound treatment and associated apparatus and method
US8338220B2 (en) * 2009-02-06 2012-12-25 Applied Materials, Inc. Negatively charged passivation layer in a photovoltaic cell
JP2010228066A (ja) * 2009-03-27 2010-10-14 Kyushu Univ ナノドットの作製方法
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
KR101335237B1 (ko) * 2010-11-05 2013-11-29 가부시키가이샤 알박 라디칼 클리닝 장치 및 방법
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
JP6210658B2 (ja) * 2012-06-01 2017-10-11 新日鐵住金株式会社 金属のガス切断方法及び金属のガス切断装置
US9892931B2 (en) * 2013-10-14 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing apparatus and method thereof
WO2018173227A1 (ja) * 2017-03-23 2018-09-27 Ｓｐｐテクノロジーズ株式会社 中性粒子ビーム処理装置
JP7412074B2 (ja) * 2018-07-18 2024-01-12 住友重機械工業株式会社 負イオン照射装置、及び負イオン照射装置の制御方法
CN118571739A (zh) * 2019-03-14 2024-08-30 朗姆研究公司 用于高深宽比蚀刻的等离子体蚀刻工具

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US4250009A (en) * 1979-05-18 1981-02-10 International Business Machines Corporation Energetic particle beam deposition system
US4837591A (en) * 1988-05-02 1989-06-06 Xerox Corporation Highlight color imaging by depositing positive and negative ions on a substrate
JP2572270B2 (ja) * 1988-09-30 1997-01-16 新敏術事業団 超高純度成膜装置
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
WO1997016946A2 (en) * 1995-10-31 1997-05-09 Arakhne Technology Inc Uniform plasma generation, filter, and neutralization apparatus and method
JP2842344B2 (ja) * 1995-11-14 1999-01-06 日本電気株式会社 中性粒子ビーム処理装置
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JPH1083899A (ja) * 1996-09-09 1998-03-31 Ebara Corp 中性粒子線源
DE19929278A1 (de) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung
JP2000100790A (ja) * 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP3948857B2 (ja) * 1999-07-14 2007-07-25 株式会社荏原製作所 ビーム源
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2002289585A (ja) * 2001-03-26 2002-10-04 Ebara Corp 中性粒子ビーム処理装置

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