TW541572B - Method of processing a surface of a workpiece with use of positive and negative ions generated in plasma or neutral particles generated by the positive and negative ions - Google Patents
Method of processing a surface of a workpiece with use of positive and negative ions generated in plasma or neutral particles generated by the positive and negative ions Download PDFInfo
- Publication number
- TW541572B TW541572B TW091105701A TW91105701A TW541572B TW 541572 B TW541572 B TW 541572B TW 091105701 A TW091105701 A TW 091105701A TW 91105701 A TW91105701 A TW 91105701A TW 541572 B TW541572 B TW 541572B
- Authority
- TW
- Taiwan
- Prior art keywords
- workpiece
- plasma
- ions
- negative ions
- treating
- Prior art date
Links
- 150000002500 ions Chemical class 0.000 title claims abstract description 204
- 238000000034 method Methods 0.000 title claims abstract description 90
- 239000002245 particle Substances 0.000 title claims description 40
- 230000007935 neutral effect Effects 0.000 title claims description 35
- 230000008569 process Effects 0.000 claims abstract description 50
- 239000000284 extract Substances 0.000 claims abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000011368 organic material Substances 0.000 claims description 16
- 230000005855 radiation Effects 0.000 claims description 9
- 238000006386 neutralization reaction Methods 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims 1
- 230000001131 transforming effect Effects 0.000 claims 1
- VRDIULHPQTYCLN-UHFFFAOYSA-N Prothionamide Chemical compound CCCC1=CC(C(N)=S)=CC=N1 VRDIULHPQTYCLN-UHFFFAOYSA-N 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 101
- 239000007789 gas Substances 0.000 description 54
- 239000010408 film Substances 0.000 description 20
- 238000009825 accumulation Methods 0.000 description 18
- 238000010884 ion-beam technique Methods 0.000 description 17
- 239000000758 substrate Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 238000000605 extraction Methods 0.000 description 9
- 230000003472 neutralizing effect Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 4
- 230000002411 adverse Effects 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000011143 downstream manufacturing Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000002689 soil Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 241001527902 Aratus Species 0.000 description 1
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 241000283973 Oryctolagus cuniculus Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011257 shell material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001088888A JP2002289584A (ja) | 2001-03-26 | 2001-03-26 | 表面処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW541572B true TW541572B (en) | 2003-07-11 |
Family
ID=18943908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091105701A TW541572B (en) | 2001-03-26 | 2002-03-25 | Method of processing a surface of a workpiece with use of positive and negative ions generated in plasma or neutral particles generated by the positive and negative ions |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6909087B2 (enExample) |
| JP (1) | JP2002289584A (enExample) |
| TW (1) | TW541572B (enExample) |
| WO (1) | WO2002078044A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI474876B (zh) * | 2010-11-05 | 2015-03-01 | Ulvac Inc | Free radical cleaning device and method |
| CN113574628A (zh) * | 2019-03-14 | 2021-10-29 | 朗姆研究公司 | 用于高深宽比蚀刻的等离子体蚀刻工具 |
| TWI778278B (zh) * | 2018-07-18 | 2022-09-21 | 日商住友重機械工業股份有限公司 | 負離子照射裝置及負離子照射裝置的控制方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7387738B2 (en) | 2003-04-28 | 2008-06-17 | Air Products And Chemicals, Inc. | Removal of surface oxides by electron attachment for wafer bumping applications |
| US7897029B2 (en) * | 2008-03-04 | 2011-03-01 | Air Products And Chemicals, Inc. | Removal of surface oxides by electron attachment |
| US8361340B2 (en) * | 2003-04-28 | 2013-01-29 | Air Products And Chemicals, Inc. | Removal of surface oxides by electron attachment |
| JP2011199297A (ja) * | 2004-07-07 | 2011-10-06 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
| JP2006049817A (ja) * | 2004-07-07 | 2006-02-16 | Showa Denko Kk | プラズマ処理方法およびプラズマエッチング方法 |
| US20060236931A1 (en) * | 2005-04-25 | 2006-10-26 | Varian Semiconductor Equipment Associates, Inc. | Tilted Plasma Doping |
| KR100698614B1 (ko) * | 2005-07-29 | 2007-03-22 | 삼성전자주식회사 | 플라즈마 가속장치 및 그것을 구비하는 플라즈마 처리시스템 |
| KR100653073B1 (ko) * | 2005-09-28 | 2006-12-01 | 삼성전자주식회사 | 기판처리장치와 기판처리방법 |
| GB2437820B (en) | 2006-04-27 | 2011-06-22 | Matsushita Electric Industrial Co Ltd | Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus |
| US7772544B2 (en) * | 2007-10-09 | 2010-08-10 | Tokyo Electron Limited | Neutral beam source and method for plasma heating |
| EP2160081A1 (en) * | 2008-08-27 | 2010-03-03 | Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. | Non-thermal plasma for wound treatment and associated apparatus and method |
| US8338220B2 (en) * | 2009-02-06 | 2012-12-25 | Applied Materials, Inc. | Negatively charged passivation layer in a photovoltaic cell |
| JP2010228066A (ja) * | 2009-03-27 | 2010-10-14 | Kyushu Univ | ナノドットの作製方法 |
| US20110139748A1 (en) * | 2009-12-15 | 2011-06-16 | University Of Houston | Atomic layer etching with pulsed plasmas |
| US8617411B2 (en) * | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
| JP6210658B2 (ja) * | 2012-06-01 | 2017-10-11 | 新日鐵住金株式会社 | 金属のガス切断方法及び金属のガス切断装置 |
| US9892931B2 (en) * | 2013-10-14 | 2018-02-13 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor manufacturing apparatus and method thereof |
| WO2018173227A1 (ja) * | 2017-03-23 | 2018-09-27 | Ｓｐｐテクノロジーズ株式会社 | 中性粒子ビーム処理装置 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
| US4250009A (en) * | 1979-05-18 | 1981-02-10 | International Business Machines Corporation | Energetic particle beam deposition system |
| US4837591A (en) * | 1988-05-02 | 1989-06-06 | Xerox Corporation | Highlight color imaging by depositing positive and negative ions on a substrate |
| JP2572270B2 (ja) * | 1988-09-30 | 1997-01-16 | 新敏術事業団 | 超高純度成膜装置 |
| JPH05326452A (ja) * | 1991-06-10 | 1993-12-10 | Kawasaki Steel Corp | プラズマ処理装置及び方法 |
| JP2845163B2 (ja) * | 1994-10-27 | 1999-01-13 | 日本電気株式会社 | プラズマ処理方法及びその装置 |
| WO1997016946A2 (en) * | 1995-10-31 | 1997-05-09 | Arakhne Technology Inc | Uniform plasma generation, filter, and neutralization apparatus and method |
| JP2842344B2 (ja) * | 1995-11-14 | 1999-01-06 | 日本電気株式会社 | 中性粒子ビーム処理装置 |
| JPH1079372A (ja) * | 1996-09-03 | 1998-03-24 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
| JPH1083899A (ja) * | 1996-09-09 | 1998-03-31 | Ebara Corp | 中性粒子線源 |
| DE19929278A1 (de) * | 1998-06-26 | 2000-02-17 | Nissin Electric Co Ltd | Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung |
| JP2000100790A (ja) * | 1998-09-22 | 2000-04-07 | Canon Inc | プラズマ処理装置及びそれを用いた処理方法 |
| JP3948857B2 (ja) * | 1999-07-14 | 2007-07-25 | 株式会社荏原製作所 | ビーム源 |
| JP3912993B2 (ja) * | 2001-03-26 | 2007-05-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP4073174B2 (ja) * | 2001-03-26 | 2008-04-09 | 株式会社荏原製作所 | 中性粒子ビーム処理装置 |
| JP2002289585A (ja) * | 2001-03-26 | 2002-10-04 | Ebara Corp | 中性粒子ビーム処理装置 |
-
2001
- 2001-03-26 JP JP2001088888A patent/JP2002289584A/ja active Pending
-
2002
- 2002-03-22 WO PCT/JP2002/002751 patent/WO2002078044A2/en not_active Ceased
- 2002-03-22 US US10/471,743 patent/US6909087B2/en not_active Expired - Fee Related
- 2002-03-25 TW TW091105701A patent/TW541572B/zh not_active IP Right Cessation
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI474876B (zh) * | 2010-11-05 | 2015-03-01 | Ulvac Inc | Free radical cleaning device and method |
| TWI778278B (zh) * | 2018-07-18 | 2022-09-21 | 日商住友重機械工業股份有限公司 | 負離子照射裝置及負離子照射裝置的控制方法 |
| TWI823563B (zh) * | 2018-07-18 | 2023-11-21 | 日商住友重機械工業股份有限公司 | 負離子照射裝置及負離子照射裝置的控制方法 |
| CN113574628A (zh) * | 2019-03-14 | 2021-10-29 | 朗姆研究公司 | 用于高深宽比蚀刻的等离子体蚀刻工具 |
| CN113574628B (zh) * | 2019-03-14 | 2024-05-28 | 朗姆研究公司 | 用于高深宽比蚀刻的等离子体蚀刻工具 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20040094400A1 (en) | 2004-05-20 |
| JP2002289584A (ja) | 2002-10-04 |
| WO2002078044A3 (en) | 2003-03-06 |
| US6909087B2 (en) | 2005-06-21 |
| WO2002078044A2 (en) | 2002-10-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |