JP2002289584A - 表面処理方法 - Google Patents

表面処理方法

Info

Publication number
JP2002289584A
JP2002289584A JP2001088888A JP2001088888A JP2002289584A JP 2002289584 A JP2002289584 A JP 2002289584A JP 2001088888 A JP2001088888 A JP 2001088888A JP 2001088888 A JP2001088888 A JP 2001088888A JP 2002289584 A JP2002289584 A JP 2002289584A
Authority
JP
Japan
Prior art keywords
ions
plasma
negative ions
surface treatment
positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001088888A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002289584A5 (enExample
Inventor
Katsunori Ichiki
克則 一木
Kazuo Yamauchi
和雄 山内
Hirokuni Hiyama
浩国 桧山
Seiji Sagawa
誠二 寒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2001088888A priority Critical patent/JP2002289584A/ja
Priority to US10/471,743 priority patent/US6909087B2/en
Priority to PCT/JP2002/002751 priority patent/WO2002078044A2/en
Priority to TW091105701A priority patent/TW541572B/zh
Publication of JP2002289584A publication Critical patent/JP2002289584A/ja
Publication of JP2002289584A5 publication Critical patent/JP2002289584A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H01J37/32706—Polarising the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Welding Or Cutting Using Electron Beams (AREA)
JP2001088888A 2001-03-26 2001-03-26 表面処理方法 Pending JP2002289584A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001088888A JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法
US10/471,743 US6909087B2 (en) 2001-03-26 2002-03-22 Method of processing a surface of a workpiece
PCT/JP2002/002751 WO2002078044A2 (en) 2001-03-26 2002-03-22 Method of processing a surface of a workpiece
TW091105701A TW541572B (en) 2001-03-26 2002-03-25 Method of processing a surface of a workpiece with use of positive and negative ions generated in plasma or neutral particles generated by the positive and negative ions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001088888A JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法

Publications (2)

Publication Number Publication Date
JP2002289584A true JP2002289584A (ja) 2002-10-04
JP2002289584A5 JP2002289584A5 (enExample) 2004-12-24

Family

ID=18943908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001088888A Pending JP2002289584A (ja) 2001-03-26 2001-03-26 表面処理方法

Country Status (4)

Country Link
US (1) US6909087B2 (enExample)
JP (1) JP2002289584A (enExample)
TW (1) TW541572B (enExample)
WO (1) WO2002078044A2 (enExample)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
JP2007042609A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd プラズマ加速装置及び該装置を備えるプラズマ処理システム
JP2007096299A (ja) * 2005-09-28 2007-04-12 Samsung Electronics Co Ltd 基板処理装置と基板処理方法
US7550715B2 (en) 2006-04-27 2009-06-23 Panasonic Corporation Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus
JP2010228066A (ja) * 2009-03-27 2010-10-14 Kyushu Univ ナノドットの作製方法
JP2011199297A (ja) * 2004-07-07 2011-10-06 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
WO2012060423A1 (ja) * 2010-11-05 2012-05-10 株式会社アルバック ラジカルクリーニング装置及び方法
JP2012529777A (ja) * 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
JP2013248653A (ja) * 2012-06-01 2013-12-12 Nippon Steel & Sumitomo Metal Corp 金属のガス切断方法及び金属のガス切断装置
KR20140051962A (ko) * 2011-07-20 2014-05-02 램 리써치 코포레이션 비활성 가스로부터 형성된 준안정 원자들을 사용한 원자층 에칭
WO2018173227A1 (ja) * 2017-03-23 2018-09-27 Ｓｐｐテクノロジーズ株式会社 中性粒子ビーム処理装置

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7387738B2 (en) 2003-04-28 2008-06-17 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment for wafer bumping applications
US7897029B2 (en) * 2008-03-04 2011-03-01 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US8361340B2 (en) * 2003-04-28 2013-01-29 Air Products And Chemicals, Inc. Removal of surface oxides by electron attachment
US20060236931A1 (en) * 2005-04-25 2006-10-26 Varian Semiconductor Equipment Associates, Inc. Tilted Plasma Doping
US7772544B2 (en) * 2007-10-09 2010-08-10 Tokyo Electron Limited Neutral beam source and method for plasma heating
EP2160081A1 (en) * 2008-08-27 2010-03-03 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Non-thermal plasma for wound treatment and associated apparatus and method
US8338220B2 (en) * 2009-02-06 2012-12-25 Applied Materials, Inc. Negatively charged passivation layer in a photovoltaic cell
US9892931B2 (en) * 2013-10-14 2018-02-13 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor manufacturing apparatus and method thereof
JP7412074B2 (ja) * 2018-07-18 2024-01-12 住友重機械工業株式会社 負イオン照射装置、及び負イオン照射装置の制御方法
CN118571739A (zh) * 2019-03-14 2024-08-30 朗姆研究公司 用于高深宽比蚀刻的等离子体蚀刻工具

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158589A (en) * 1977-12-30 1979-06-19 International Business Machines Corporation Negative ion extractor for a plasma etching apparatus
US4250009A (en) * 1979-05-18 1981-02-10 International Business Machines Corporation Energetic particle beam deposition system
US4837591A (en) * 1988-05-02 1989-06-06 Xerox Corporation Highlight color imaging by depositing positive and negative ions on a substrate
JP2572270B2 (ja) * 1988-09-30 1997-01-16 新敏術事業団 超高純度成膜装置
JPH05326452A (ja) * 1991-06-10 1993-12-10 Kawasaki Steel Corp プラズマ処理装置及び方法
JP2845163B2 (ja) * 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
WO1997016946A2 (en) * 1995-10-31 1997-05-09 Arakhne Technology Inc Uniform plasma generation, filter, and neutralization apparatus and method
JP2842344B2 (ja) * 1995-11-14 1999-01-06 日本電気株式会社 中性粒子ビーム処理装置
JPH1079372A (ja) * 1996-09-03 1998-03-24 Matsushita Electric Ind Co Ltd プラズマ処理方法及びプラズマ処理装置
JPH1083899A (ja) * 1996-09-09 1998-03-31 Ebara Corp 中性粒子線源
DE19929278A1 (de) * 1998-06-26 2000-02-17 Nissin Electric Co Ltd Verfahren zum Implantieren negativer Wasserstoffionen und Implantierungseinrichtung
JP2000100790A (ja) * 1998-09-22 2000-04-07 Canon Inc プラズマ処理装置及びそれを用いた処理方法
JP3948857B2 (ja) * 1999-07-14 2007-07-25 株式会社荏原製作所 ビーム源
JP3912993B2 (ja) * 2001-03-26 2007-05-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP2002289585A (ja) * 2001-03-26 2002-10-04 Ebara Corp 中性粒子ビーム処理装置

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006049817A (ja) * 2004-07-07 2006-02-16 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
JP2011199297A (ja) * 2004-07-07 2011-10-06 Showa Denko Kk プラズマ処理方法およびプラズマエッチング方法
JP2007042609A (ja) * 2005-07-29 2007-02-15 Samsung Electronics Co Ltd プラズマ加速装置及び該装置を備えるプラズマ処理システム
JP2007096299A (ja) * 2005-09-28 2007-04-12 Samsung Electronics Co Ltd 基板処理装置と基板処理方法
US7550715B2 (en) 2006-04-27 2009-06-23 Panasonic Corporation Fast atom bombardment source, fast atom beam emission method, and surface modification apparatus
JP2010228066A (ja) * 2009-03-27 2010-10-14 Kyushu Univ ナノドットの作製方法
JP2012529777A (ja) * 2009-12-15 2012-11-22 ユニバーシティ オブ ヒューストン システム パルスプラズマを用いた原子層エッチング
US10515782B2 (en) 2009-12-15 2019-12-24 University Of Houston System Atomic layer etching with pulsed plasmas
JP2014007432A (ja) * 2009-12-15 2014-01-16 Univ Of Houston System パルスプラズマを用いた原子層エッチング
KR101392838B1 (ko) * 2009-12-15 2014-05-15 유니버시티 오브 휴스턴 시스템 펄스형 플라즈마를 사용한 원자층 에칭
WO2012060423A1 (ja) * 2010-11-05 2012-05-10 株式会社アルバック ラジカルクリーニング装置及び方法
TWI474876B (zh) * 2010-11-05 2015-03-01 Ulvac Inc Free radical cleaning device and method
JP2014522104A (ja) * 2011-07-20 2014-08-28 ラム リサーチ コーポレーション 不活性ガスから生成される準安定ガスを使用する原子層エッチング
KR20140051962A (ko) * 2011-07-20 2014-05-02 램 리써치 코포레이션 비활성 가스로부터 형성된 준안정 원자들을 사용한 원자층 에칭
US10014192B2 (en) 2011-07-20 2018-07-03 Lam Research Corporation Apparatus for atomic layering etching
KR101920527B1 (ko) * 2011-07-20 2018-11-20 램 리써치 코포레이션 비활성 가스로부터 형성된 준안정 원자들을 사용한 원자층 에칭
JP2013248653A (ja) * 2012-06-01 2013-12-12 Nippon Steel & Sumitomo Metal Corp 金属のガス切断方法及び金属のガス切断装置
WO2018173227A1 (ja) * 2017-03-23 2018-09-27 Ｓｐｐテクノロジーズ株式会社 中性粒子ビーム処理装置
JPWO2018173227A1 (ja) * 2017-03-23 2019-07-18 Ｓｐｐテクノロジーズ株式会社 中性粒子ビーム処理装置

Also Published As

Publication number Publication date
US20040094400A1 (en) 2004-05-20
WO2002078044A3 (en) 2003-03-06
US6909087B2 (en) 2005-06-21
WO2002078044A2 (en) 2002-10-03
TW541572B (en) 2003-07-11

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