Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32082—Radio frequency generated discharge
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
  • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32697—Electrostatic control
  • H01J37/32706—Polarising the substrate
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
  • H05H1/00—Generating plasma; Handling plasma
  • H05H1/24—Generating plasma
  • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

• the positive ions and the negative ions have substantially the same mass. Therefore, the positive ions and the negative ions can alternately be extracted from a plasma comprising a mixture of positive ions and negative ions and accelerated in an AC or DC pulsed electric field having a frequency of 1 MHz or lower, preferably 600 kHz or lower. At this time, accumulated charges are reduced on the surface of the workpiece, for thereby suppressing etching profile irregularities or charge build-up damage. Therefore, the workpiece can be processed in a fine pattern having a higher aspect ratio.
• a etching rate can be enhanced by chemical sputtering effect.
• the ions that have passed through the grid electrode 5 are emitted as an energetic beam into the process chamber 6.
• the ion beam travels directly in the process chamber 6 and is applied to the workpiece X placed on the workpiece holder 20, for thereby etching the surface of the workpiece X, cleaning the surface of the workpiece X, modifying (e.g., nitriding or oxidizing) the surface of the workpiece X, or depositing a film on the workpiece X.
• the ion beam generated through the grid electrode 4 may be neutralized to generate a neutral particle beam.
• an orifice electrode made of an electrically conductive material may be used as a neutralization device or neutralizing the ion beam, as shown in FIG. 3. In FIG.
• the neutral particle beam travels directly in the process chamber 6 and is applied to the workpiece X placed on the workpiece holder 20, for thereby etching the surface of the workpiece X, cleaning the surface of the workpiece X, modifying (e.g., nitriding or oxidizing) the surface of the workpiece X, or depositing a filmon the workpiece X.
• FIG. 4 is a timing chart showing timing chart showing operating states of the processing apparatus shown in FIG.1.
• Va represents the potential of the coil 10
• Te the electron temperature in the plasma generating chamber 2
• ne the electron density in the plasma generating chamber 2
• ni the negative ion density in the plasma generating chamber 2
• Vbl, Vb2 and Vb3 the potentials of the grid electrode 4.
• the timing chart is schematically shown in FIG. 4, and the shown frequencies are different from the actual frequencies, for example.
• the high-frequency voltage applied by the high-frequency power supply 101 is interrupted for 100 microseconds.
• the period of time (100 microseconds) for which the high-frequency voltage is interrupted is sufficiently longer than a period of time in which the electrons in the plasma are attached to the residual process gas to generate negative ions, and sufficiently shorter than a period of time in which the electron density in the plasma is lowered to extinguish the plasma.
• the period of time (10 microseconds) for which the high-frequency voltage is applied is long enough to recover the energy of the electrons in the plasma which has been lowered during the interruption of the high-frequency voltage.
• FIG. 5 is a schematic view showing a whole arrangement of a processing apparatus according to a second embodiment of the present invention, with electric components in block form.
• like parts and components are denoted by the same reference numerals and characters as those of the first embodiment and will not be described below.

Landscapes

• Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Plasma & Fusion (AREA)
• Chemical & Material Sciences (AREA)
• Analytical Chemistry (AREA)
• Electromagnetism (AREA)
• Spectroscopy & Molecular Physics (AREA)
• Drying Of Semiconductors (AREA)
• ing And Chemical Polishing (AREA)
• Welding Or Cutting Using Electron Beams (AREA)

Priority Applications (1)

Applications Claiming Priority (2)

Publications (2)

Family

ID=18943908

Family Applications (1)

Country Status (4)

Cited By (1)

Families Citing this family (20)

Family Cites Families (16)

• 2001
  • 2001-03-26 JP JP2001088888A patent/JP2002289584A/ja active Pending
• 2002
  • 2002-03-22 WO PCT/JP2002/002751 patent/WO2002078044A2/en not_active Ceased
  • 2002-03-22 US US10/471,743 patent/US6909087B2/en not_active Expired - Fee Related
  • 2002-03-25 TW TW091105701A patent/TW541572B/zh not_active IP Right Cessation

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