ATE366953T1 - Mikrostrukturierungsverfahren - Google Patents

Mikrostrukturierungsverfahren

Info

Publication number
ATE366953T1
ATE366953T1 AT04729445T AT04729445T ATE366953T1 AT E366953 T1 ATE366953 T1 AT E366953T1 AT 04729445 T AT04729445 T AT 04729445T AT 04729445 T AT04729445 T AT 04729445T AT E366953 T1 ATE366953 T1 AT E366953T1
Authority
AT
Austria
Prior art keywords
bulk
energy
radiation
microstructuring process
deposited
Prior art date
Application number
AT04729445T
Other languages
English (en)
Inventor
Samuel Jaccard
Serguei Mikhailov
Frans Munnik
Original Assignee
Haute Ecole Arc Ne Be Ju
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Haute Ecole Arc Ne Be Ju filed Critical Haute Ecole Arc Ne Be Ju
Application granted granted Critical
Publication of ATE366953T1 publication Critical patent/ATE366953T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00492—Processes for surface micromachining not provided for in groups B81C1/0046 - B81C1/00484
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/201—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by an oblique exposure; characterised by the use of plural sources; characterised by the rotation of the optical device; characterised by a relative movement of the optical device, the light source, the sensitive system or the mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/03—Processes for manufacturing substrate-free structures
    • B81C2201/032—LIGA process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31735—Direct-write microstructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31752—Lithography using particular beams or near-field effects, e.g. STM-like techniques
    • H01J2237/31755—Lithography using particular beams or near-field effects, e.g. STM-like techniques using ion beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31793—Problems associated with lithography
    • H01J2237/31796—Problems associated with lithography affecting resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Inorganic Fibers (AREA)
AT04729445T 2003-04-24 2004-04-26 Mikrostrukturierungsverfahren ATE366953T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03009333 2003-04-24

Publications (1)

Publication Number Publication Date
ATE366953T1 true ATE366953T1 (de) 2007-08-15

Family

ID=33305762

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04729445T ATE366953T1 (de) 2003-04-24 2004-04-26 Mikrostrukturierungsverfahren

Country Status (5)

Country Link
US (1) US7385209B2 (de)
EP (1) EP1616224B1 (de)
AT (1) ATE366953T1 (de)
DE (1) DE602004007500D1 (de)
WO (1) WO2004095138A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008058299A1 (de) * 2008-11-20 2010-05-27 Siemens Aktiengesellschaft Vorrichtung und Verfahren zur Reduzierung der Strahlaufweitung einer Strahlung
US9651539B2 (en) * 2012-10-28 2017-05-16 Quantapore, Inc. Reducing background fluorescence in MEMS materials by low energy ion beam treatment
DE102016015822B3 (de) 2016-04-04 2019-03-28 mi2-factory GmbH Verfahren zur Ionenimplantation
DE102016106119B4 (de) 2016-04-04 2019-03-07 mi2-factory GmbH Energiefilterelement für Ionenimplantationsanlagen für den Einsatz in der Produktion von Wafern
DE102016015819B3 (de) 2016-04-04 2019-04-11 mi2-factory GmbH Verfahren zur Ionenimplantation
DE102016015820B3 (de) 2016-04-04 2019-07-11 mi2-factory GmbH Implantationsanlage
DE102016015821B3 (de) 2016-04-04 2019-04-11 mi2-factory GmbH Verfahren zur Ionenimplantation

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5126006A (en) 1990-10-30 1992-06-30 International Business Machines Corp. Plural level chip masking
US5730924A (en) * 1994-12-28 1998-03-24 Sumitomo Heavy Industries, Ltd. Micromachining of polytetrafluoroethylene using radiation
US5761111A (en) * 1996-03-15 1998-06-02 President And Fellows Of Harvard College Method and apparatus providing 2-D/3-D optical information storage and retrieval in transparent materials
DE19652463C2 (de) * 1996-12-17 1999-02-25 Univ Schiller Jena Verfahren und Vorrichtung zur Herstellung dreidimensionaler Mikrostrukturen beliebiger Form
US6316153B1 (en) * 1998-04-21 2001-11-13 The University Of Connecticut Free-form fabricaton using multi-photon excitation
US6548224B1 (en) 2000-03-07 2003-04-15 Kulicke & Soffa Holdings, Inc. Wiring substrate features having controlled sidewall profiles
KR100811017B1 (ko) * 2000-06-15 2008-03-11 쓰리엠 이노베이티브 프로퍼티즈 캄파니 다중방향성 광반응성 흡수 방법

Also Published As

Publication number Publication date
US20060214105A1 (en) 2006-09-28
DE602004007500D1 (de) 2007-08-23
EP1616224A2 (de) 2006-01-18
EP1616224B1 (de) 2007-07-11
WO2004095138A2 (en) 2004-11-04
US7385209B2 (en) 2008-06-10
WO2004095138A3 (en) 2005-07-07

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Legal Events

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