JP2018508815A5 - - Google Patents
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- Publication number
- JP2018508815A5 JP2018508815A5 JP2017538246A JP2017538246A JP2018508815A5 JP 2018508815 A5 JP2018508815 A5 JP 2018508815A5 JP 2017538246 A JP2017538246 A JP 2017538246A JP 2017538246 A JP2017538246 A JP 2017538246A JP 2018508815 A5 JP2018508815 A5 JP 2018508815A5
- Authority
- JP
- Japan
- Prior art keywords
- feature
- exposure
- species
- patterning
- ion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000002500 ions Chemical class 0.000 claims description 46
- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 20
- 238000000059 patterning Methods 0.000 claims description 20
- -1 hydrogen ions Chemical class 0.000 claims description 17
- 238000002513 implantation Methods 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- 239000006117 anti-reflective coating Substances 0.000 claims 4
- 239000007943 implant Substances 0.000 claims 3
- 229910052796 boron Inorganic materials 0.000 claims 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000539 dimer Substances 0.000 description 2
- 239000013638 trimer Substances 0.000 description 2
- 235000001674 Agaricus brunnescens Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562106874P | 2015-01-23 | 2015-01-23 | |
| US62/106,874 | 2015-01-23 | ||
| US14/645,646 US9512517B2 (en) | 2015-01-23 | 2015-03-12 | Multiple exposure treatment for processing a patterning feature |
| US14/645,646 | 2015-03-12 | ||
| PCT/US2015/068047 WO2016118299A1 (en) | 2015-01-23 | 2015-12-30 | Multiple exposure treatment for processing a patterning feature |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018508815A JP2018508815A (ja) | 2018-03-29 |
| JP2018508815A5 true JP2018508815A5 (enExample) | 2019-02-07 |
| JP6725518B2 JP6725518B2 (ja) | 2020-07-22 |
Family
ID=56417577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538246A Active JP6725518B2 (ja) | 2015-01-23 | 2015-12-30 | パターニングフィーチャーを加工するための多重露光処理 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9512517B2 (enExample) |
| JP (1) | JP6725518B2 (enExample) |
| KR (1) | KR102401846B1 (enExample) |
| CN (1) | CN107112211B (enExample) |
| TW (1) | TWI604508B (enExample) |
| WO (1) | WO2016118299A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102468232B1 (ko) * | 2017-10-11 | 2022-11-21 | 삼성전자주식회사 | 기판 식각 방법 |
| US10643858B2 (en) * | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
| US10522349B2 (en) * | 2017-11-30 | 2019-12-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-reflective coating by ion implantation for lithography patterning |
| US11372332B2 (en) * | 2018-10-26 | 2022-06-28 | Tokyo Electron Limited | Plasma treatment method to improve photo resist roughness and remove photo resist scum |
| JP2024131462A (ja) * | 2023-03-16 | 2024-09-30 | 東京エレクトロン株式会社 | 炭素膜形成方法及び炭素膜形成装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5648198A (en) * | 1994-12-13 | 1997-07-15 | Kabushiki Kaisha Toshiba | Resist hardening process having improved thermal stability |
| KR0161389B1 (ko) * | 1995-02-16 | 1999-01-15 | 윤종용 | 마스크 및 이를 사용한 패턴형성방법 |
| US6004854A (en) * | 1995-07-17 | 1999-12-21 | Micron Technology, Inc. | Method of forming CMOS integrated circuitry |
| JPH11102899A (ja) * | 1997-09-26 | 1999-04-13 | Sanyo Electric Co Ltd | 半導体装置の製造方法 |
| EP0940846A1 (en) | 1998-03-06 | 1999-09-08 | Interuniversitair Micro-Elektronica Centrum Vzw | Method for stripping ion implanted photoresist layer |
| JP2001358061A (ja) * | 2000-04-12 | 2001-12-26 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
| KR100364122B1 (en) * | 2001-04-24 | 2002-12-11 | Hynix Semiconductor Inc | Method for fabricating semiconductor device |
| US6864144B2 (en) * | 2002-05-30 | 2005-03-08 | Intel Corporation | Method of stabilizing resist material through ion implantation |
| US6811956B1 (en) * | 2002-06-24 | 2004-11-02 | Advanced Micro Devices, Inc. | Line edge roughness reduction by plasma treatment before etch |
| JP4538209B2 (ja) | 2003-08-28 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | 半導体装置の製造方法 |
| JP2005197348A (ja) * | 2004-01-05 | 2005-07-21 | Semiconductor Leading Edge Technologies Inc | 半導体製造装置及び半導体装置の製造方法 |
| JP4968589B2 (ja) * | 2005-11-16 | 2012-07-04 | 株式会社ニコン | 基板処理方法、フォトマスクの製造方法及びフォトマスク、並びにデバイス製造方法 |
| KR20100133507A (ko) | 2008-05-01 | 2010-12-21 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물 |
| CN101752205A (zh) * | 2008-12-01 | 2010-06-23 | 中芯国际集成电路制造(上海)有限公司 | 收缩线型图形特征尺寸的方法 |
| JP2010147252A (ja) * | 2008-12-18 | 2010-07-01 | Sharp Corp | イオン注入方法、および半導体装置の製造方法 |
| US8236659B2 (en) | 2010-06-16 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source and drain feature profile for improving device performance and method of manufacturing same |
| JP5674375B2 (ja) * | 2010-08-03 | 2015-02-25 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US8133804B1 (en) | 2010-10-01 | 2012-03-13 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying patterned photoresist using multi-step ion implantation |
| CN103426760B (zh) * | 2012-05-16 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | P型ldmos表面沟道器件的制造工艺 |
| US9159810B2 (en) * | 2012-08-22 | 2015-10-13 | Advanced Ion Beam Technology, Inc. | Doping a non-planar semiconductor device |
| US9268228B2 (en) * | 2013-02-23 | 2016-02-23 | Varian Semiconductor Equipment Associates, Inc. | Techniques for patterning a substrate |
| US8952344B2 (en) | 2013-03-14 | 2015-02-10 | Varian Semiconductor Equipment Associates | Techniques for processing photoresist features using ions |
-
2015
- 2015-03-12 US US14/645,646 patent/US9512517B2/en active Active
- 2015-12-24 TW TW104143480A patent/TWI604508B/zh active
- 2015-12-30 CN CN201580073031.2A patent/CN107112211B/zh active Active
- 2015-12-30 KR KR1020177023155A patent/KR102401846B1/ko active Active
- 2015-12-30 JP JP2017538246A patent/JP6725518B2/ja active Active
- 2015-12-30 WO PCT/US2015/068047 patent/WO2016118299A1/en not_active Ceased
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