KR102401846B1 - 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 - Google Patents

패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 Download PDF

Info

Publication number
KR102401846B1
KR102401846B1 KR1020177023155A KR20177023155A KR102401846B1 KR 102401846 B1 KR102401846 B1 KR 102401846B1 KR 1020177023155 A KR1020177023155 A KR 1020177023155A KR 20177023155 A KR20177023155 A KR 20177023155A KR 102401846 B1 KR102401846 B1 KR 102401846B1
Authority
KR
South Korea
Prior art keywords
patterned
feature
exposure
ions
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020177023155A
Other languages
English (en)
Korean (ko)
Other versions
KR20170105601A (ko
Inventor
트리스탄 와이. 마
모린 케이. 페터슨
존 하우탈라
루도빅 고데트
Original Assignee
베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크. filed Critical 베리안 세미콘덕터 이큅먼트 어소시에이츠, 인크.
Publication of KR20170105601A publication Critical patent/KR20170105601A/ko
Application granted granted Critical
Publication of KR102401846B1 publication Critical patent/KR102401846B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279—Ionlithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
KR1020177023155A 2015-01-23 2015-12-30 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리 Active KR102401846B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562106874P 2015-01-23 2015-01-23
US62/106,874 2015-01-23
US14/645,646 US9512517B2 (en) 2015-01-23 2015-03-12 Multiple exposure treatment for processing a patterning feature
US14/645,646 2015-03-12
PCT/US2015/068047 WO2016118299A1 (en) 2015-01-23 2015-12-30 Multiple exposure treatment for processing a patterning feature

Publications (2)

Publication Number Publication Date
KR20170105601A KR20170105601A (ko) 2017-09-19
KR102401846B1 true KR102401846B1 (ko) 2022-05-25

Family

ID=56417577

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020177023155A Active KR102401846B1 (ko) 2015-01-23 2015-12-30 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리

Country Status (6)

Country Link
US (1) US9512517B2 (enExample)
JP (1) JP6725518B2 (enExample)
KR (1) KR102401846B1 (enExample)
CN (1) CN107112211B (enExample)
TW (1) TWI604508B (enExample)
WO (1) WO2016118299A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102468232B1 (ko) * 2017-10-11 2022-11-21 삼성전자주식회사 기판 식각 방법
US10643858B2 (en) * 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate
US10522349B2 (en) * 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US11372332B2 (en) * 2018-10-26 2022-06-28 Tokyo Electron Limited Plasma treatment method to improve photo resist roughness and remove photo resist scum
JP2024131462A (ja) * 2023-03-16 2024-09-30 東京エレクトロン株式会社 炭素膜形成方法及び炭素膜形成装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP2005072518A (ja) 2003-08-28 2005-03-17 Hitachi Ltd 半導体装置の製造方法およびその装置
US20140272728A1 (en) * 2013-03-14 2014-09-18 Varian Semiconductor Equipment Associates, Inc. Techniques for processing photoresist features using ions

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648198A (en) * 1994-12-13 1997-07-15 Kabushiki Kaisha Toshiba Resist hardening process having improved thermal stability
KR0161389B1 (ko) * 1995-02-16 1999-01-15 윤종용 마스크 및 이를 사용한 패턴형성방법
US6004854A (en) * 1995-07-17 1999-12-21 Micron Technology, Inc. Method of forming CMOS integrated circuitry
JPH11102899A (ja) * 1997-09-26 1999-04-13 Sanyo Electric Co Ltd 半導体装置の製造方法
EP0940846A1 (en) 1998-03-06 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Method for stripping ion implanted photoresist layer
KR100364122B1 (en) * 2001-04-24 2002-12-11 Hynix Semiconductor Inc Method for fabricating semiconductor device
US6864144B2 (en) * 2002-05-30 2005-03-08 Intel Corporation Method of stabilizing resist material through ion implantation
US6811956B1 (en) * 2002-06-24 2004-11-02 Advanced Micro Devices, Inc. Line edge roughness reduction by plasma treatment before etch
JP2005197348A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 半導体製造装置及び半導体装置の製造方法
JP4968589B2 (ja) * 2005-11-16 2012-07-04 株式会社ニコン 基板処理方法、フォトマスクの製造方法及びフォトマスク、並びにデバイス製造方法
KR20100133507A (ko) 2008-05-01 2010-12-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물
CN101752205A (zh) * 2008-12-01 2010-06-23 中芯国际集成电路制造(上海)有限公司 收缩线型图形特征尺寸的方法
JP2010147252A (ja) * 2008-12-18 2010-07-01 Sharp Corp イオン注入方法、および半導体装置の製造方法
US8236659B2 (en) 2010-06-16 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Source and drain feature profile for improving device performance and method of manufacturing same
JP5674375B2 (ja) * 2010-08-03 2015-02-25 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US8133804B1 (en) 2010-10-01 2012-03-13 Varian Semiconductor Equipment Associates, Inc. Method and system for modifying patterned photoresist using multi-step ion implantation
CN103426760B (zh) * 2012-05-16 2016-02-10 上海华虹宏力半导体制造有限公司 P型ldmos表面沟道器件的制造工艺
US9159810B2 (en) * 2012-08-22 2015-10-13 Advanced Ion Beam Technology, Inc. Doping a non-planar semiconductor device
US9268228B2 (en) * 2013-02-23 2016-02-23 Varian Semiconductor Equipment Associates, Inc. Techniques for patterning a substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
JP2005072518A (ja) 2003-08-28 2005-03-17 Hitachi Ltd 半導体装置の製造方法およびその装置
US20140272728A1 (en) * 2013-03-14 2014-09-18 Varian Semiconductor Equipment Associates, Inc. Techniques for processing photoresist features using ions

Also Published As

Publication number Publication date
CN107112211B (zh) 2021-06-29
US20160215385A1 (en) 2016-07-28
CN107112211A (zh) 2017-08-29
TWI604508B (zh) 2017-11-01
KR20170105601A (ko) 2017-09-19
TW201630046A (zh) 2016-08-16
US9512517B2 (en) 2016-12-06
JP2018508815A (ja) 2018-03-29
JP6725518B2 (ja) 2020-07-22
WO2016118299A1 (en) 2016-07-28

Similar Documents

Publication Publication Date Title
KR102401846B1 (ko) 패턴화 특징부를 프로세싱하기 위한 다중 노출 처리
US8460569B2 (en) Method and system for post-etch treatment of patterned substrate features
US8133804B1 (en) Method and system for modifying patterned photoresist using multi-step ion implantation
JP5728566B2 (ja) イオン注入を用いて基板のパターン化特徴を変更するための方法及びシステム
TWI527117B (zh) 橫向修整硬遮罩的方法
US7371690B2 (en) Dry etching method and apparatus
US8952344B2 (en) Techniques for processing photoresist features using ions
US10332748B2 (en) Etch rate modulation through ion implantation
KR100382720B1 (ko) 반도체 식각 장치 및 이를 이용한 반도체 소자의 식각 방법
TW201303994A (zh) 鰭片場效電晶體結構的形成方法
WO2017112354A1 (en) Ion-assisted deposition and implantation of photoresist to improve line edge roughness
US9735013B2 (en) Ion implantation for improved contact hole critical dimension uniformity
US9885957B2 (en) Ion-assisted deposition and implantation of photoresist to improve line edge roughness
JP2018508815A5 (enExample)
US9613813B2 (en) Method for improving critical dimension variability by implanting argon or silicon ions into a patterned mask
KR20130124149A (ko) 이온 주입을 사용하는 기판 패턴화된 특징부들의 수정 방법 및 시스템
GB2320335A (en) Removing a resist film
US9520290B1 (en) Ion implantation for improved etch performance
CN113097058A (zh) 半导体器件及其制备方法
WO2025170672A1 (en) Direct current superposition (dcs) for protection of organic mandrel during spacer deposition
KR20040040686A (ko) 반도체소자의 콘택홀 형성방법

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4