JP6725518B2 - パターニングフィーチャーを加工するための多重露光処理 - Google Patents

パターニングフィーチャーを加工するための多重露光処理 Download PDF

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JP6725518B2
JP6725518B2 JP2017538246A JP2017538246A JP6725518B2 JP 6725518 B2 JP6725518 B2 JP 6725518B2 JP 2017538246 A JP2017538246 A JP 2017538246A JP 2017538246 A JP2017538246 A JP 2017538246A JP 6725518 B2 JP6725518 B2 JP 6725518B2
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feature
exposure
photoresist
ions
patterning
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JP2018508815A5 (enExample
JP2018508815A (ja
Inventor
ワイ マ トリスタン
ワイ マ トリスタン
ケイ パターソン モーリーン
ケイ パターソン モーリーン
ホータラ ジョン
ホータラ ジョン
ゴデ ルドヴィック
ゴデ ルドヴィック
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ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0277—Electrolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0279—Ionlithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Micromachines (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
JP2017538246A 2015-01-23 2015-12-30 パターニングフィーチャーを加工するための多重露光処理 Active JP6725518B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562106874P 2015-01-23 2015-01-23
US62/106,874 2015-01-23
US14/645,646 US9512517B2 (en) 2015-01-23 2015-03-12 Multiple exposure treatment for processing a patterning feature
US14/645,646 2015-03-12
PCT/US2015/068047 WO2016118299A1 (en) 2015-01-23 2015-12-30 Multiple exposure treatment for processing a patterning feature

Publications (3)

Publication Number Publication Date
JP2018508815A JP2018508815A (ja) 2018-03-29
JP2018508815A5 JP2018508815A5 (enExample) 2019-02-07
JP6725518B2 true JP6725518B2 (ja) 2020-07-22

Family

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JP2017538246A Active JP6725518B2 (ja) 2015-01-23 2015-12-30 パターニングフィーチャーを加工するための多重露光処理

Country Status (6)

Country Link
US (1) US9512517B2 (enExample)
JP (1) JP6725518B2 (enExample)
KR (1) KR102401846B1 (enExample)
CN (1) CN107112211B (enExample)
TW (1) TWI604508B (enExample)
WO (1) WO2016118299A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
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KR102468232B1 (ko) * 2017-10-11 2022-11-21 삼성전자주식회사 기판 식각 방법
US10643858B2 (en) * 2017-10-11 2020-05-05 Samsung Electronics Co., Ltd. Method of etching substrate
US10522349B2 (en) * 2017-11-30 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective coating by ion implantation for lithography patterning
US11372332B2 (en) * 2018-10-26 2022-06-28 Tokyo Electron Limited Plasma treatment method to improve photo resist roughness and remove photo resist scum
JP2024131462A (ja) * 2023-03-16 2024-09-30 東京エレクトロン株式会社 炭素膜形成方法及び炭素膜形成装置

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JP2001358061A (ja) * 2000-04-12 2001-12-26 Mitsubishi Electric Corp 半導体装置の製造方法
KR100364122B1 (en) * 2001-04-24 2002-12-11 Hynix Semiconductor Inc Method for fabricating semiconductor device
US6864144B2 (en) * 2002-05-30 2005-03-08 Intel Corporation Method of stabilizing resist material through ion implantation
US6811956B1 (en) * 2002-06-24 2004-11-02 Advanced Micro Devices, Inc. Line edge roughness reduction by plasma treatment before etch
JP4538209B2 (ja) 2003-08-28 2010-09-08 株式会社日立ハイテクノロジーズ 半導体装置の製造方法
JP2005197348A (ja) * 2004-01-05 2005-07-21 Semiconductor Leading Edge Technologies Inc 半導体製造装置及び半導体装置の製造方法
JP4968589B2 (ja) * 2005-11-16 2012-07-04 株式会社ニコン 基板処理方法、フォトマスクの製造方法及びフォトマスク、並びにデバイス製造方法
KR20100133507A (ko) 2008-05-01 2010-12-21 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 고밀도 주입된 레지스트의 제거를 위한 저 ｐｈ 혼합물
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Also Published As

Publication number Publication date
CN107112211B (zh) 2021-06-29
US20160215385A1 (en) 2016-07-28
CN107112211A (zh) 2017-08-29
TWI604508B (zh) 2017-11-01
KR102401846B1 (ko) 2022-05-25
KR20170105601A (ko) 2017-09-19
TW201630046A (zh) 2016-08-16
US9512517B2 (en) 2016-12-06
JP2018508815A (ja) 2018-03-29
WO2016118299A1 (en) 2016-07-28

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