JP6188792B2 - Ｔｅｍ観察用の薄片の調製 - Google Patents

Ｔｅｍ観察用の薄片の調製 Download PDF

Info

Publication number
JP6188792B2
JP6188792B2 JP2015514131A JP2015514131A JP6188792B2 JP 6188792 B2 JP6188792 B2 JP 6188792B2 JP 2015514131 A JP2015514131 A JP 2015514131A JP 2015514131 A JP2015514131 A JP 2015514131A JP 6188792 B2 JP6188792 B2 JP 6188792B2
Authority
JP
Japan
Prior art keywords
milling
flakes
ion beam
flake
workpiece
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2015514131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2015517676A (ja
JP2015517676A5 (enExample
Inventor
スコット・エドワード・フラー
ブライアン・ロバーツ・ルース・ジュニア
マイケル・モリアーティ
Original Assignee
エフ・イ−・アイ・カンパニー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エフ・イ−・アイ・カンパニー filed Critical エフ・イ−・アイ・カンパニー
Publication of JP2015517676A publication Critical patent/JP2015517676A/ja
Publication of JP2015517676A5 publication Critical patent/JP2015517676A5/ja
Application granted granted Critical
Publication of JP6188792B2 publication Critical patent/JP6188792B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP2015514131A 2012-05-21 2013-05-21 Ｔｅｍ観察用の薄片の調製 Active JP6188792B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261649917P 2012-05-21 2012-05-21
US61/649,917 2012-05-21
PCT/US2013/042090 WO2013177209A1 (en) 2012-05-21 2013-05-21 Preparation of lamellae for tem viewing

Publications (3)

Publication Number Publication Date
JP2015517676A JP2015517676A (ja) 2015-06-22
JP2015517676A5 JP2015517676A5 (enExample) 2016-06-23
JP6188792B2 true JP6188792B2 (ja) 2017-08-30

Family

ID=49624298

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2015514131A Active JP6188792B2 (ja) 2012-05-21 2013-05-21 Ｔｅｍ観察用の薄片の調製

Country Status (5)

Country Link
US (1) US10068749B2 (enExample)
EP (1) EP2852967B1 (enExample)
JP (1) JP6188792B2 (enExample)
CN (1) CN104303257B (enExample)
WO (1) WO2013177209A1 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103946684B (zh) 2011-12-01 2017-06-23 Fei 公司 用于横截面视图薄层的背侧打薄的高吞吐量tem制备工艺和硬件
CN104428867B (zh) 2012-07-16 2018-10-16 Fei 公司 用于聚焦离子束处理的终点确定
US10465293B2 (en) * 2012-08-31 2019-11-05 Fei Company Dose-based end-pointing for low-kV FIB milling TEM sample preparation
TWI607498B (zh) * 2012-10-05 2017-12-01 Fei公司 使用帶電粒子束曝露樣品中所關注特徵的方法及系統
EP2916342A1 (en) 2014-03-05 2015-09-09 Fei Company Fabrication of a lamella for correlative atomic-resolution tomographic analyses
CN103868773A (zh) * 2014-03-24 2014-06-18 上海华力微电子有限公司 透射电镜样品的制作方法
US9281163B2 (en) 2014-04-14 2016-03-08 Fei Company High capacity TEM grid
US20150369710A1 (en) 2014-06-24 2015-12-24 Fei Company Method and System of Creating a Symmetrical FIB Deposition
KR102383571B1 (ko) * 2014-06-30 2022-04-06 가부시키가이샤 히다치 하이테크 사이언스 자동 시료 제작 장치
TWI506262B (zh) * 2014-09-01 2015-11-01 Powerchip Technology Corp 穿透式電子顯微鏡試片的製備方法
KR102410666B1 (ko) 2015-01-09 2022-06-20 삼성전자주식회사 반도체 소자의 계측 방법, 및 이를 이용한 반도체 소자의 제조방법
CN105910855B (zh) * 2015-02-19 2020-09-04 日本株式会社日立高新技术科学 带电粒子束装置
FR3037943B1 (fr) * 2015-06-24 2018-11-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de croissance de nanomateriau sur lame mince
CN105300754B (zh) * 2015-09-11 2019-06-28 上海华力微电子有限公司 一种防止tem芯片样品破裂的方法
US9978586B2 (en) * 2015-11-06 2018-05-22 Fei Company Method of material deposition
DE102016002883B4 (de) * 2016-03-09 2023-05-17 Carl Zeiss Microscopy Gmbh Verfahren zum Struktuieren eines Objekts und Partikelstrahlsystem hierzu
US9837246B1 (en) 2016-07-22 2017-12-05 Fei Company Reinforced sample for transmission electron microscope
CN107860620B (zh) * 2016-09-22 2020-07-28 中芯国际集成电路制造(上海)有限公司 一种透射电子显微镜样品及其制备方法
EP3364444A1 (en) * 2017-02-21 2018-08-22 IMEC vzw A method and apparatus for transmission electron microscopy
US10546719B2 (en) * 2017-06-02 2020-01-28 Fei Company Face-on, gas-assisted etching for plan-view lamellae preparation
CZ310048B6 (cs) * 2017-07-25 2024-06-19 Tescan Group, A.S. Způsob odstranění hmoty
US10453646B2 (en) * 2017-09-06 2019-10-22 Fei Company Tomography-assisted TEM prep with requested intervention automation workflow
KR102677678B1 (ko) * 2017-09-25 2024-06-21 셀라 - 솔루션스 인에이블링 나노 어낼리시스 엘티디. 깊이 제어 가능한 이온 밀링
WO2019071352A1 (en) * 2017-10-13 2019-04-18 Fibics Incorporated PROCESS FOR PREPARING SAMPLE OF CROSS SECTION
KR102537699B1 (ko) * 2017-12-26 2023-05-26 삼성전자주식회사 반도체 장치의 검사 방법
US10748290B2 (en) * 2018-10-31 2020-08-18 Fei Company Smart metrology on microscope images
CN110082177B (zh) * 2019-04-17 2022-01-25 宸鸿科技(厦门)有限公司 晶体电子元件在tem制样过程中造成辐照损伤的清洁方法
US11440151B2 (en) * 2019-06-07 2022-09-13 Applied Materials Israel Ltd. Milling a multi-layered object
US11355305B2 (en) * 2019-10-08 2022-06-07 Fei Company Low keV ion beam image restoration by machine learning for object localization
CN110579495B (zh) * 2019-10-23 2022-06-28 长江存储科技有限责任公司 一种tem样品及其制备方法
JP7512849B2 (ja) * 2019-11-22 2024-07-09 住友金属鉱山株式会社 透過電子顕微鏡観察用試料とその作製方法
CN110926898A (zh) * 2019-12-09 2020-03-27 中国工程物理研究院化工材料研究所 一种电子束敏感脆性材料透射电镜样品制备方法
CN111238894B (zh) * 2020-02-03 2023-02-28 天津理工大学 一种原位电学tem样品的制备方法
US11355313B2 (en) * 2020-06-30 2022-06-07 Fei Company Line-based endpoint detection
US11499926B2 (en) * 2020-06-30 2022-11-15 Fei Company Method for diffraction pattern acquisition
CN113984821B (zh) * 2021-12-29 2022-03-11 中国科学院地质与地球物理研究所 纳米结构三维成像系统与方法
EP4379348A1 (en) * 2022-11-30 2024-06-05 Fei Company Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope
CN116380577B (zh) * 2023-03-01 2025-07-22 清华大学 利用聚焦离子束加工半导体芯片结构透射样品的方法
US20250112024A1 (en) * 2023-09-28 2025-04-03 Fei Company Adaptive slice depth in slice & view workflow
CN117405719B (zh) * 2023-12-14 2024-03-05 崇义章源钨业股份有限公司 一种薄膜材料截面扫描电镜样品制取装置
WO2025242376A1 (en) * 2024-05-22 2025-11-27 Carl Zeiss Smt Gmbh Semiconductor sample with reduced preparation time
CN119985563B (zh) * 2025-02-25 2025-10-31 浙江大学 一种单点金刚石刀具刃口的透射电镜样品制备方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4620898A (en) 1985-09-13 1986-11-04 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Ion beam sputter etching
US5435850A (en) 1993-09-17 1995-07-25 Fei Company Gas injection system
JP3221797B2 (ja) * 1994-06-14 2001-10-22 株式会社日立製作所 試料作成方法及びその装置
US5851413A (en) 1996-06-19 1998-12-22 Micrion Corporation Gas delivery systems for particle beam processing
JP3333731B2 (ja) 1998-02-09 2002-10-15 株式会社日立製作所 透過形電子顕微鏡用薄片試料作製方法
TW430871B (en) * 1998-06-18 2001-04-21 United Microelectronics Corp Method for milling test piece of transmission electron microscope
US6194720B1 (en) 1998-06-24 2001-02-27 Micron Technology, Inc. Preparation of transmission electron microscope samples
JP4270719B2 (ja) 1999-06-30 2009-06-03 株式会社東芝 半導体装置及びその製造方法
JP2001021467A (ja) * 1999-07-08 2001-01-26 Hitachi Ltd 集束イオンビームを用いた試料加工方法、及び集束イオンビーム加工装置
JP3923733B2 (ja) 2001-01-29 2007-06-06 東芝マイクロエレクトロニクス株式会社 透過型電子顕微鏡の試料作製方法
WO2002071031A1 (en) 2001-03-01 2002-09-12 Moore Thomas M Total release method for sample extraction from a charged particle instrument
US6927174B2 (en) * 2003-08-12 2005-08-09 Texas Instruments Incorporated Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation
KR20050033699A (ko) * 2003-10-07 2005-04-13 삼성전자주식회사 투과전자현미경 분석용 시편의 제작 방법
US7473496B2 (en) 2004-11-04 2009-01-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing opaque defects in photolithography masks
JP4947965B2 (ja) * 2005-12-06 2012-06-06 ラピスセミコンダクタ株式会社 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造
WO2008051880A2 (en) 2006-10-20 2008-05-02 Fei Company Method and apparatus for sample extraction and handling
EP2106555B1 (en) 2006-10-20 2015-01-07 FEI Company Method for s/tem sample analysis
US8835880B2 (en) 2006-10-31 2014-09-16 Fei Company Charged particle-beam processing using a cluster source
US7880151B2 (en) 2008-02-28 2011-02-01 Fei Company Beam positioning for beam processing
DE102009008166A1 (de) * 2009-02-10 2010-09-02 Carl Zeiss Nts Gmbh Verfahren zur Abscheidung von Schutzstrukturen
JP5763298B2 (ja) * 2010-03-10 2015-08-12 株式会社日立ハイテクサイエンス 集束イオンビーム装置及び断面加工観察方法
KR20110114026A (ko) 2010-04-12 2011-10-19 삼성전자주식회사 시편 제조 장치 및 방법
EP2402475A1 (en) 2010-06-30 2012-01-04 Fei Company Beam-induced deposition at cryogenic temperatures
JP5364049B2 (ja) * 2010-07-07 2013-12-11 株式会社日立ハイテクノロジーズ 荷電粒子ビーム装置、および試料作成方法

Also Published As

Publication number Publication date
CN104303257A (zh) 2015-01-21
CN104303257B (zh) 2018-03-30
WO2013177209A1 (en) 2013-11-28
EP2852967A4 (en) 2015-06-03
JP2015517676A (ja) 2015-06-22
EP2852967A1 (en) 2015-04-01
US20130319849A1 (en) 2013-12-05
EP2852967B1 (en) 2019-01-16
US10068749B2 (en) 2018-09-04

Similar Documents

Publication Publication Date Title
JP6188792B2 (ja) Ｔｅｍ観察用の薄片の調製
US10529538B2 (en) Endpointing for focused ion beam processing
JP5410286B2 (ja) Ｓ／ｔｅｍのサンプルを作成する方法およびサンプル構造
EP2704179B1 (en) Dose-based end-pointing for low-kv FIB milling in TEM sample preparation
US9279752B2 (en) Method for preparing thin samples for TEM imaging
JP6598684B2 (ja) 荷電粒子ビームを用いた傾斜ミリングまたは視射角ミリング操作用の基準マーク設計
JP2010507781A5 (enExample)
JP2010507782A5 (enExample)
US9837246B1 (en) Reinforced sample for transmission electron microscope
TWI713075B (zh) 對準用於處理之一帶電粒子射束之方法，用於形成一薄板以用於穿透式電子檢視之方法，及用於一樣本之帶電粒子射束處理之設備
KR20240135369A (ko) 투과 전자 현미경(tem) 분석을 위한 샘플을 제작하는 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20160501

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20160501

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20170223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20170314

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20170613

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20170614

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20170704

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20170801

R150 Certificate of patent or registration of utility model

Ref document number: 6188792

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250