JP4947965B2 - 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 - Google Patents
透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 Download PDFInfo
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- JP4947965B2 JP4947965B2 JP2005351847A JP2005351847A JP4947965B2 JP 4947965 B2 JP4947965 B2 JP 4947965B2 JP 2005351847 A JP2005351847 A JP 2005351847A JP 2005351847 A JP2005351847 A JP 2005351847A JP 4947965 B2 JP4947965 B2 JP 4947965B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/32—Polishing; Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Plasma & Fusion (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
Description
12 観察断面
14 前方空間
18 保護膜
18a 保護膜(薄膜化後)
22 拡張領域
22a 試料本体(薄膜化後)
24 後方空間
30 TEM試料
Claims (6)
- 半導体デバイスの特定箇所の観察断面を走査型顕微鏡で観察した後、当該断面を透過型電子顕微鏡で観察するための試料の作製方法において、
前記走査型顕微鏡による観察が行われた前記断面に非晶質構造の保護膜を形成する工程と;
前記保護膜が形成された観察断面の周囲を収束イオンビームを用いて除去する工程と;
前記保護膜に付着した堆積物を除去するとともに前記保護膜を薄膜化する工程とを含むことを特徴とする試料作製方法。 - 前記保護膜は、カーボン膜又はシリコン酸化膜であることを特徴とする請求項1に記載の試料作製方法。
- 前記保護膜は、収束イオンビーム又は電子ビームを用いて前記観察断面に堆積形成されることを特徴とする請求項1又は2に記載の試料作製方法。
- 半導体デバイスの断面を観察する観察方法において、
前記半導体デバイスの特定箇所の断面を走査型顕微鏡で観察する工程と;
前記走査型顕微鏡による観察が行われた前記断面に非晶質構造の保護膜を形成する工程と;
前記保護膜が形成された観察断面の周囲を収束イオンビームを用いて除去する工程と;
収束イオンビームを用いて前記保護膜に付着した堆積物を除去するとともに前記保護膜を薄膜化する工程と;
前記保護膜を透して透過型電子顕微鏡によって前記断面を更に観察する工程と;を含むことを特徴とする試料の観察方法。 - 前記保護膜は、カーボン膜又はシリコン酸化膜であることを特徴とする請求項4に記載の観察方法。
- 前記保護膜は、収束イオンビーム又は電子ビームを用いて前記観察断面に堆積形成されることを特徴とする請求項4又は5に記載の観察方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005351847A JP4947965B2 (ja) | 2005-12-06 | 2005-12-06 | 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 |
CN200610135723.8A CN1979119B (zh) | 2005-12-06 | 2006-10-18 | 透射型电子显微镜用的试样制作方法、观察方法以及结构 |
US11/604,268 US7525087B2 (en) | 2005-12-06 | 2006-11-27 | Method for creating observational sample |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005351847A JP4947965B2 (ja) | 2005-12-06 | 2005-12-06 | 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007155524A JP2007155524A (ja) | 2007-06-21 |
JP4947965B2 true JP4947965B2 (ja) | 2012-06-06 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005351847A Active JP4947965B2 (ja) | 2005-12-06 | 2005-12-06 | 透過型電子顕微鏡用の試料の作製方法、観察方法及び構造 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7525087B2 (ja) |
JP (1) | JP4947965B2 (ja) |
CN (1) | CN1979119B (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
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US7394075B1 (en) * | 2005-02-18 | 2008-07-01 | Cypress Semiconductor Corporation | Preparation of integrated circuit device samples for observation and analysis |
FR2932313A1 (fr) * | 2008-06-10 | 2009-12-11 | Commissariat Energie Atomique | Procede de preparation d'echantillons pour analyse microscopique |
EP2151848A1 (en) * | 2008-08-07 | 2010-02-10 | FEI Company | Method of machining a work piece with a focused particle beam |
CN101988909B (zh) * | 2009-08-06 | 2012-03-07 | 中芯国际集成电路制造(上海)有限公司 | 低k介电材料的失效分析方法 |
JP5281525B2 (ja) * | 2009-09-11 | 2013-09-04 | 一般財団法人電力中央研究所 | 試料作製方法 |
CN102269771B (zh) * | 2010-06-04 | 2013-09-25 | 中芯国际集成电路制造(上海)有限公司 | 一种透射电子显微镜观测样品制备方法 |
CN102269772A (zh) * | 2010-06-04 | 2011-12-07 | 中芯国际集成电路制造(上海)有限公司 | 一种纳米微粒浮栅透射电子显微镜观测样品制备方法 |
CN102410947B (zh) * | 2010-09-19 | 2013-03-06 | 中芯国际集成电路制造(上海)有限公司 | Tem样品的制备方法 |
CN102788723B (zh) * | 2011-05-20 | 2015-02-04 | 中国科学院微电子研究所 | 一种用于原位电学测试的透射电镜样品的制备方法 |
US8859963B2 (en) * | 2011-06-03 | 2014-10-14 | Fei Company | Methods for preparing thin samples for TEM imaging |
CN103946684B (zh) * | 2011-12-01 | 2017-06-23 | Fei 公司 | 用于横截面视图薄层的背侧打薄的高吞吐量tem制备工艺和硬件 |
JP5986408B2 (ja) | 2012-03-22 | 2016-09-06 | 株式会社日立ハイテクサイエンス | 試料作製方法 |
WO2013177209A1 (en) | 2012-05-21 | 2013-11-28 | Fei Company | Preparation of lamellae for tem viewing |
CN103196718B (zh) * | 2013-03-14 | 2015-06-17 | 上海华力微电子有限公司 | Tem样品的制备方法 |
WO2014165973A1 (en) | 2013-04-09 | 2014-10-16 | Laboratoires Bodycad Inc. | Multi-scale active contour segmentation |
EP2916342A1 (en) * | 2014-03-05 | 2015-09-09 | Fei Company | Fabrication of a lamella for correlative atomic-resolution tomographic analyses |
JP6305143B2 (ja) * | 2014-03-20 | 2018-04-04 | 株式会社日立ハイテクサイエンス | 断面加工方法 |
TWI506262B (zh) * | 2014-09-01 | 2015-11-01 | Powerchip Technology Corp | 穿透式電子顯微鏡試片的製備方法 |
US9378927B2 (en) * | 2014-09-11 | 2016-06-28 | Fei Company | AutoSlice and view undercut method |
CN104458371B (zh) * | 2014-11-26 | 2017-05-17 | 上海华力微电子有限公司 | 一种tem样品的制备方法 |
CN105136539B (zh) * | 2015-08-26 | 2019-05-03 | 上海华力微电子有限公司 | 一种制备tem芯片样品的方法 |
US10373802B2 (en) * | 2015-09-29 | 2019-08-06 | Hitachi High-Technologies Corporation | Transmission scanning microscopy including electron energy loss spectroscopy and observation method thereof |
US9978586B2 (en) * | 2015-11-06 | 2018-05-22 | Fei Company | Method of material deposition |
CN106908290B (zh) * | 2017-02-16 | 2019-10-11 | 中国科学院合肥物质科学研究院 | 全息观测透射电镜试样的制备方法 |
US20230063192A1 (en) * | 2020-02-27 | 2023-03-02 | Hitachi High-Tech Corporation | Semiconductor Analysis System |
CN112041671B (zh) * | 2020-07-24 | 2023-10-20 | 长江存储科技有限责任公司 | 制备和分析薄膜的方法 |
CN114441561B (zh) * | 2020-10-20 | 2023-12-01 | 陈健群 | 用于电子显微镜的测试样品及其制作方法 |
CN112687605B (zh) * | 2020-12-28 | 2022-07-29 | 华东师范大学 | 一种减少电子辐射损伤的方法和芯片 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH08261894A (ja) * | 1995-03-23 | 1996-10-11 | Mitsubishi Electric Corp | Tem評価試料及びその作成方法 |
US6538254B1 (en) | 1997-07-22 | 2003-03-25 | Hitachi, Ltd. | Method and apparatus for sample fabrication |
US6768110B2 (en) * | 2000-06-21 | 2004-07-27 | Gatan, Inc. | Ion beam milling system and method for electron microscopy specimen preparation |
JP3923733B2 (ja) * | 2001-01-29 | 2007-06-06 | 東芝マイクロエレクトロニクス株式会社 | 透過型電子顕微鏡の試料作製方法 |
JP2003194681A (ja) | 2001-12-26 | 2003-07-09 | Toshiba Microelectronics Corp | Tem試料作製方法 |
JP4170048B2 (ja) * | 2002-08-30 | 2008-10-22 | エスアイアイ・ナノテクノロジー株式会社 | イオンビーム装置およびイオンビーム加工方法 |
JP3735614B2 (ja) * | 2003-03-19 | 2006-01-18 | 株式会社東芝 | 透過電子顕微鏡観測用下地試料、透過電子顕微鏡測定方法、および透過電子顕微鏡装置 |
US7180061B2 (en) * | 2004-09-29 | 2007-02-20 | International Business Machines Corporation | Method for electron beam-initiated coating for application of transmission electron microscopy |
US7317188B2 (en) * | 2005-04-27 | 2008-01-08 | Systems On Silicon Manufacturing Company Pte. Ltd. | TEM sample preparation from a circuit layer structure |
-
2005
- 2005-12-06 JP JP2005351847A patent/JP4947965B2/ja active Active
-
2006
- 2006-10-18 CN CN200610135723.8A patent/CN1979119B/zh not_active Expired - Fee Related
- 2006-11-27 US US11/604,268 patent/US7525087B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7525087B2 (en) | 2009-04-28 |
JP2007155524A (ja) | 2007-06-21 |
CN1979119B (zh) | 2014-05-14 |
CN1979119A (zh) | 2007-06-13 |
US20070158566A1 (en) | 2007-07-12 |
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