JP6598684B2 - 荷電粒子ビームを用いた傾斜ミリングまたは視射角ミリング操作用の基準マーク設計 - Google Patents
荷電粒子ビームを用いた傾斜ミリングまたは視射角ミリング操作用の基準マーク設計 Download PDFInfo
- Publication number
- JP6598684B2 JP6598684B2 JP2015550843A JP2015550843A JP6598684B2 JP 6598684 B2 JP6598684 B2 JP 6598684B2 JP 2015550843 A JP2015550843 A JP 2015550843A JP 2015550843 A JP2015550843 A JP 2015550843A JP 6598684 B2 JP6598684 B2 JP 6598684B2
- Authority
- JP
- Japan
- Prior art keywords
- sample
- angle
- milling
- feature
- charged particle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/221—Image processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/22—Treatment of data
- H01J2237/226—Image reconstruction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2814—Measurement of surface topography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/3174—Etching microareas
- H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers
Description
Claims (5)
- 試料上に基準マークを形成する方法であって、
第1のミリング操作のために、第2の角度と実質的に直交する第1の角度で荷電粒子ビームが前記試料に導かれるように前記試料を配置すること、
前記荷電粒子ビームに対して実質的に平行な前記試料上の面を、前記荷電粒子ビームを用いてミリングすること、
前記試料の前記ミリングされた面に材料を付着させることにより、前記試料の前記ミリングされた面に3次元基準マークを形成すること、
画像認識のコントラストおよび可読性を向上させるために、前記3次元基準マークの少なくとも1つの表面にパターンをミリングすること、
第2のミリング操作のために、前記第2の角度で前記荷電粒子ビームが前記試料に導かれるように前記試料を配置し、前記第2の角度が、前記試料の表面に対して10度以下であること
を含む方法。 - 前記第2の角度が、前記試料の表面に対して5度以下である、請求項1に記載の方法。
- 前記第2の角度が、前記試料の表面に対して1度以下である、請求項1または請求項2に記載の方法。
- 請求項1から3のいずれか一項に記載の方法を実行するシステムであって、
集束イオン・ビーム・システムと、
電子顕微鏡と、
試料を支持する試料ステージと
を備えるシステム。 - 前記3次元基準マークを形成する前記材料は、付着前駆体ガスの存在下で前記荷電粒子ビームを使用して付着される、請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261747516P | 2012-12-31 | 2012-12-31 | |
US201261747515P | 2012-12-31 | 2012-12-31 | |
US61/747,515 | 2012-12-31 | ||
US61/747,516 | 2012-12-31 | ||
PCT/US2013/078315 WO2014106182A1 (en) | 2012-12-31 | 2013-12-30 | Fiducial design for tilted or glancing mill operations with a charged particle beam |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2016503890A JP2016503890A (ja) | 2016-02-08 |
JP2016503890A5 JP2016503890A5 (ja) | 2017-02-09 |
JP6598684B2 true JP6598684B2 (ja) | 2019-10-30 |
Family
ID=51022112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015550843A Active JP6598684B2 (ja) | 2012-12-31 | 2013-12-30 | 荷電粒子ビームを用いた傾斜ミリングまたは視射角ミリング操作用の基準マーク設計 |
Country Status (7)
Country | Link |
---|---|
US (2) | US10026590B2 (ja) |
EP (1) | EP2939254A4 (ja) |
JP (1) | JP6598684B2 (ja) |
KR (1) | KR102148284B1 (ja) |
CN (1) | CN105264635B (ja) |
TW (2) | TWI643235B (ja) |
WO (1) | WO2014106182A1 (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016002341A1 (ja) * | 2014-06-30 | 2016-01-07 | 株式会社 日立ハイテクノロジーズ | パターン測定方法、及びパターン測定装置 |
TWI600053B (zh) * | 2015-03-04 | 2017-09-21 | 國立中興大學 | 聚集游離裝置及質譜儀 |
US9619728B2 (en) * | 2015-05-31 | 2017-04-11 | Fei Company | Dynamic creation of backup fiducials |
US9627176B2 (en) * | 2015-07-23 | 2017-04-18 | Fei Company | Fiducial formation for TEM/STEM tomography tilt-series acquisition and alignment |
US10816333B2 (en) * | 2016-07-28 | 2020-10-27 | Hitachi High-Tech Corporation | Pattern measurement method and pattern measurement device |
CN106353353A (zh) * | 2016-10-31 | 2017-01-25 | 上海华虹宏力半导体制造有限公司 | 超级结沟槽底部定点分析方法 |
JP7113613B2 (ja) * | 2016-12-21 | 2022-08-05 | エフ イー アイ カンパニ | 欠陥分析 |
DE102017212020B3 (de) * | 2017-07-13 | 2018-05-30 | Carl Zeiss Microscopy Gmbh | Verfahren zur In-situ-Präparation und zum Transfer mikroskopischer Proben, Computerprogrammprodukt sowie mikroskopische Probe |
CZ2017424A3 (cs) * | 2017-07-25 | 2019-02-06 | Tescan Brno, S.R.O. | Způsob odstranění hmoty |
US10731979B2 (en) * | 2018-01-12 | 2020-08-04 | Applied Materials Israel Ltd. | Method for monitoring nanometric structures |
CN111758144B (zh) * | 2018-02-28 | 2023-06-02 | 株式会社日立高新技术 | 离子铣削装置及离子铣削装置的离子源调整方法 |
US10811219B2 (en) | 2018-08-07 | 2020-10-20 | Applied Materials Israel Ltd. | Method for evaluating a region of an object |
CN112912988A (zh) * | 2018-10-23 | 2021-06-04 | 应用材料公司 | 用于大面积基板的聚焦离子束系统 |
WO2020100179A1 (ja) * | 2018-11-12 | 2020-05-22 | 株式会社日立ハイテク | 画像形成方法及び画像形成システム |
KR102641280B1 (ko) * | 2018-11-22 | 2024-02-27 | 어플라이드 머티어리얼스, 인코포레이티드 | 기판에 대한 임계 치수 측정을 위한 방법, 및 기판 상의 전자 디바이스를 검사하고 절단하기 위한 장치 |
US11158487B2 (en) * | 2019-03-29 | 2021-10-26 | Fei Company | Diagonal compound mill |
JP2021086793A (ja) * | 2019-11-29 | 2021-06-03 | 株式会社日立ハイテク | 荷電粒子ビームシステム、荷電粒子線装置における焦点位置を自動で探索する範囲を決定する方法、およびコンピュータシステムに、荷電粒子線装置における焦点位置を自動で探索する範囲を決定させるためのプログラムを記録した非一時的記憶媒体 |
CN115280463A (zh) | 2020-03-13 | 2022-11-01 | 卡尔蔡司Smt有限责任公司 | 晶片中检查体积的截面成像方法 |
CN114689630A (zh) | 2020-12-30 | 2022-07-01 | Fei 公司 | 用于对三维特征进行成像的方法和系统 |
WO2022174187A2 (en) * | 2021-02-15 | 2022-08-18 | E.A. Fischione Instruments, Inc. | System and method for uniform ion milling |
US20230115376A1 (en) * | 2021-10-07 | 2023-04-13 | Carl Zeiss Smt Gmbh | Wafer-tilt determination for slice-and-image process |
CN116337903B (zh) * | 2023-04-11 | 2023-12-22 | 胜科纳米(苏州)股份有限公司 | 一种3dnada闪存垂直通道的超薄电镜样品及其制样方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3699334A (en) * | 1969-06-16 | 1972-10-17 | Kollsman Instr Corp | Apparatus using a beam of positive ions for controlled erosion of surfaces |
US5435850A (en) | 1993-09-17 | 1995-07-25 | Fei Company | Gas injection system |
US5851413A (en) | 1996-06-19 | 1998-12-22 | Micrion Corporation | Gas delivery systems for particle beam processing |
US6353222B1 (en) * | 1998-09-03 | 2002-03-05 | Applied Materials, Inc. | Determining defect depth and contour information in wafer structures using multiple SEM images |
JP2000097823A (ja) * | 1998-09-24 | 2000-04-07 | Canon Inc | マーキング方法、マーキングしたマークの除去方法、並びにマークを利用した加工方法及び被加工物 |
NL1021376C1 (nl) * | 2002-09-02 | 2004-03-03 | Fei Co | Werkwijze voor het verkrijgen van een deeltjes-optische afbeelding van een sample in een deeltjes-optisch toestel. |
JP2004253232A (ja) * | 2003-02-20 | 2004-09-09 | Renesas Technology Corp | 試料固定台 |
DE602004021750D1 (de) | 2003-07-14 | 2009-08-13 | Fei Co | Zweistrahlsystem |
JP4486462B2 (ja) | 2004-09-29 | 2010-06-23 | 日本電子株式会社 | 試料作製方法および試料作製装置 |
US7312448B2 (en) * | 2005-04-06 | 2007-12-25 | Carl Zeiss Nts Gmbh | Method and apparatus for quantitative three-dimensional reconstruction in scanning electron microscopy |
JP2007164992A (ja) * | 2005-12-09 | 2007-06-28 | Sii Nanotechnology Inc | 複合荷電粒子ビーム装置 |
JP4293201B2 (ja) * | 2006-04-25 | 2009-07-08 | 株式会社日立製作所 | 試料作製方法および装置 |
JP5039961B2 (ja) * | 2007-04-24 | 2012-10-03 | エスアイアイ・ナノテクノロジー株式会社 | 三次元画像構築方法 |
JP5117764B2 (ja) | 2007-05-22 | 2013-01-16 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビーム加工装置 |
JP5105281B2 (ja) * | 2007-12-04 | 2012-12-26 | エスアイアイ・ナノテクノロジー株式会社 | 試料加工方法および装置 |
GB0905571D0 (en) * | 2009-03-31 | 2009-05-13 | Sec Dep For Innovation Univers | Method and apparatus for producing three dimensional nano and micro scale structures |
DE102011002583B9 (de) | 2011-01-12 | 2018-06-28 | Carl Zeiss Microscopy Gmbh | Teilchenstrahlgerät und Verfahren zur Bearbeitung und/oder Analyse einer Probe |
DE102011006588A1 (de) * | 2011-03-31 | 2012-10-04 | Carl Zeiss Nts Gmbh | Teilchenstrahlgerät mit Detektoranordnung |
JP6174584B2 (ja) | 2011-09-12 | 2017-08-02 | エフ・イ−・アイ・カンパニー | 視射角ミル |
US8502172B1 (en) | 2012-06-26 | 2013-08-06 | Fei Company | Three dimensional fiducial |
US9412560B2 (en) | 2012-10-05 | 2016-08-09 | Fei Company | Bulk deposition for tilted mill protection |
-
2013
- 2013-12-30 JP JP2015550843A patent/JP6598684B2/ja active Active
- 2013-12-30 TW TW102149124A patent/TWI643235B/zh active
- 2013-12-30 TW TW107137808A patent/TWI686837B/zh active
- 2013-12-30 KR KR1020157020830A patent/KR102148284B1/ko active IP Right Grant
- 2013-12-30 EP EP13867985.7A patent/EP2939254A4/en not_active Withdrawn
- 2013-12-30 WO PCT/US2013/078315 patent/WO2014106182A1/en active Application Filing
- 2013-12-30 CN CN201380074020.7A patent/CN105264635B/zh active Active
- 2013-12-30 US US14/758,466 patent/US10026590B2/en active Active
-
2018
- 2018-06-20 US US16/012,888 patent/US11315756B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI643235B (zh) | 2018-12-01 |
JP2016503890A (ja) | 2016-02-08 |
CN105264635A (zh) | 2016-01-20 |
US20150357159A1 (en) | 2015-12-10 |
CN105264635B (zh) | 2018-11-20 |
US20180301319A1 (en) | 2018-10-18 |
TW201907437A (zh) | 2019-02-16 |
KR102148284B1 (ko) | 2020-08-26 |
TWI686837B (zh) | 2020-03-01 |
KR20150102119A (ko) | 2015-09-04 |
TW201442054A (zh) | 2014-11-01 |
EP2939254A4 (en) | 2016-09-07 |
US11315756B2 (en) | 2022-04-26 |
WO2014106182A1 (en) | 2014-07-03 |
EP2939254A1 (en) | 2015-11-04 |
US10026590B2 (en) | 2018-07-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11315756B2 (en) | Fiducial design for tilted or glancing mill operations with a charged particle beam | |
US10529538B2 (en) | Endpointing for focused ion beam processing | |
US20180247793A1 (en) | Glancing angle mill | |
TWI618935B (zh) | 多維度結構接取 | |
TWI628702B (zh) | 高「高寬比」結構之分析 | |
JP6644127B2 (ja) | 荷電粒子ビーム試料作製におけるカーテニングを低減させる方法およびシステム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150901 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161220 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20161220 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20171010 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171128 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180227 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180427 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180528 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181102 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190310 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20191001 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6598684 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |