JP2015510260A - 基板を処理する方法および装置 - Google Patents

基板を処理する方法および装置 Download PDF

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Publication number
JP2015510260A
JP2015510260A JP2014552295A JP2014552295A JP2015510260A JP 2015510260 A JP2015510260 A JP 2015510260A JP 2014552295 A JP2014552295 A JP 2014552295A JP 2014552295 A JP2014552295 A JP 2014552295A JP 2015510260 A JP2015510260 A JP 2015510260A
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JP
Japan
Prior art keywords
substrate
gas
back side
processing
processing chamber
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Pending
Application number
JP2014552295A
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English (en)
Japanese (ja)
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JP2015510260A5 (https=
Inventor
マシュー ロジャーズ，
マシュー ロジャーズ，
マーティン リプリー，
マーティン リプリー，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2015510260A publication Critical patent/JP2015510260A/ja
Publication of JP2015510260A5 publication Critical patent/JP2015510260A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
JP2014552295A 2012-01-13 2013-01-10 基板を処理する方法および装置 Pending JP2015510260A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261586186P 2012-01-13 2012-01-13
US61/586,186 2012-01-13
US13/737,350 2013-01-09
US13/737,350 US8980767B2 (en) 2012-01-13 2013-01-09 Methods and apparatus for processing a substrate
PCT/US2013/021006 WO2013106552A1 (en) 2012-01-13 2013-01-10 Methods and apparatus for processing a substrate

Publications (2)

Publication Number Publication Date
JP2015510260A true JP2015510260A (ja) 2015-04-02
JP2015510260A5 JP2015510260A5 (https=) 2016-04-07

Family

ID=48780267

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014552295A Pending JP2015510260A (ja) 2012-01-13 2013-01-10 基板を処理する方法および装置

Country Status (6)

Country Link
US (2) US8980767B2 (https=)
JP (1) JP2015510260A (https=)
KR (3) KR20140121833A (https=)
CN (1) CN107464751B (https=)
TW (1) TWI579922B (https=)
WO (1) WO2013106552A1 (https=)

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JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2015073185A1 (en) * 2013-11-12 2015-05-21 Applied Materials, Inc. Pyrometer background elimination
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN110119072B (zh) * 2018-02-06 2021-05-14 志圣科技（广州）有限公司 曝光组件及曝光装置
US20220199379A1 (en) * 2019-04-26 2022-06-23 Lam Research Corporation High temperature heating of a substrate in a processing chamber
WO2021034508A1 (en) 2019-08-16 2021-02-25 Lam Research Corporation Spatially tunable deposition to compensate within wafer differential bow
WO2021138018A1 (en) 2020-01-03 2021-07-08 Lam Research Corporation Station-to-station control of backside bow compensation deposition
KR20260029373A (ko) 2020-01-30 2026-03-04 램 리써치 코포레이션 국부적인 응력 변조를 위한 uv 경화
US12176242B2 (en) * 2022-01-21 2024-12-24 Applied Materials, Inc. Rotatable thermal processing chamber
US20240288220A1 (en) * 2023-02-24 2024-08-29 Applied Materials, Inc. Convective substrate cooling with minimal pressure change

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255800A (ja) * 1994-12-19 1996-10-01 Applied Materials Inc 基板温度測定のための方法及び装置
JPH10189469A (ja) * 1996-12-03 1998-07-21 Applied Materials Inc 基板をガスにより支持する方法
JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
JP2001135635A (ja) * 1999-06-22 2001-05-18 Applied Materials Inc 研磨されたハロゲンドープシリコンガラスの窒素処理
JP2001196324A (ja) * 1999-07-08 2001-07-19 Applied Materials Inc 基板の熱処理
JP2002033314A (ja) * 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2002261087A (ja) * 2001-02-27 2002-09-13 Tokyo Electron Ltd 基板処理装置
JP2003077851A (ja) * 2001-08-28 2003-03-14 Applied Materials Inc 熱処理方法及び装置

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US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
KR100838874B1 (ko) * 2000-07-06 2008-06-16 어플라이드 머티어리얼스, 인코포레이티드 기판을 열 처리하는 시스템 및 방법
US6521292B1 (en) * 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
US20040266123A1 (en) 2002-05-08 2004-12-30 Applied Materials, Inc. Electron beam treatment of SixNy films
JP4186536B2 (ja) * 2002-07-18 2008-11-26 松下電器産業株式会社 プラズマ処理装置
JP4765328B2 (ja) 2004-04-16 2011-09-07 東京エレクトロン株式会社 被処理体の処理装置
US7860379B2 (en) * 2007-01-15 2010-12-28 Applied Materials, Inc. Temperature measurement and control of wafer support in thermal processing chamber
US8580078B2 (en) * 2007-01-26 2013-11-12 Lam Research Corporation Bevel etcher with vacuum chuck
US8057602B2 (en) * 2007-05-09 2011-11-15 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
WO2009031566A1 (ja) 2007-09-06 2009-03-12 Creative Technology Corporation 静電チャック装置におけるガス供給構造の製造方法及び静電チャック装置ガス供給構造並びに静電チャック装置
KR20100114037A (ko) * 2007-12-20 2010-10-22 어플라이드 머티어리얼스, 인코포레이티드 향상된 가스 유동 분포를 가진 열 반응기
JP2009231401A (ja) * 2008-03-21 2009-10-08 Tokyo Electron Ltd 載置台構造及び熱処理装置
EP3573092B1 (en) * 2008-05-02 2021-12-22 Applied Materials, Inc. System for non radial temperature control for rotating substrates
US8254767B2 (en) * 2008-08-29 2012-08-28 Applied Materials, Inc. Method and apparatus for extended temperature pyrometry
TWM478017U (zh) * 2013-09-05 2014-05-11 Sankitai Co Ltd 料件回吹分離裝置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08255800A (ja) * 1994-12-19 1996-10-01 Applied Materials Inc 基板温度測定のための方法及び装置
JP2007208287A (ja) * 1994-12-19 2007-08-16 Applied Materials Inc 基板温度測定のための装置
JPH10189469A (ja) * 1996-12-03 1998-07-21 Applied Materials Inc 基板をガスにより支持する方法
JP2001135635A (ja) * 1999-06-22 2001-05-18 Applied Materials Inc 研磨されたハロゲンドープシリコンガラスの窒素処理
JP2001196324A (ja) * 1999-07-08 2001-07-19 Applied Materials Inc 基板の熱処理
JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
JP2002033314A (ja) * 2000-02-10 2002-01-31 Applied Materials Inc Ｐｅｃｖｄキャッピングモジュールを含む低誘電率誘電体処理のための方法及び一体型装置
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
JP2002261087A (ja) * 2001-02-27 2002-09-13 Tokyo Electron Ltd 基板処理装置
JP2003077851A (ja) * 2001-08-28 2003-03-14 Applied Materials Inc 熱処理方法及び装置

Also Published As

Publication number Publication date
KR20140121833A (ko) 2014-10-16
KR20200093702A (ko) 2020-08-05
TW201335997A (zh) 2013-09-01
TWI579922B (zh) 2017-04-21
US20150206721A1 (en) 2015-07-23
CN104025280A (zh) 2014-09-03
KR200496202Y1 (ko) 2022-11-29
US8980767B2 (en) 2015-03-17
WO2013106552A1 (en) 2013-07-18
CN107464751B (zh) 2020-09-11
KR20200001978U (ko) 2020-09-08
US20130183834A1 (en) 2013-07-18
CN107464751A (zh) 2017-12-12

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