TWI579922B - 用於處理基板的方法與裝置 - Google Patents

用於處理基板的方法與裝置 Download PDF

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Publication number
TWI579922B
TWI579922B TW102100951A TW102100951A TWI579922B TW I579922 B TWI579922 B TW I579922B TW 102100951 A TW102100951 A TW 102100951A TW 102100951 A TW102100951 A TW 102100951A TW I579922 B TWI579922 B TW I579922B
Authority
TW
Taiwan
Prior art keywords
substrate
gas
back side
processing
processing chamber
Prior art date
Application number
TW102100951A
Other languages
English (en)
Chinese (zh)
Other versions
TW201335997A (zh
Inventor
羅吉斯馬修
雷普利馬丁
Original Assignee
應用材料股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 應用材料股份有限公司 filed Critical 應用材料股份有限公司
Publication of TW201335997A publication Critical patent/TW201335997A/zh
Application granted granted Critical
Publication of TWI579922B publication Critical patent/TWI579922B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
TW102100951A 2012-01-13 2013-01-10 用於處理基板的方法與裝置 TWI579922B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261586186P 2012-01-13 2012-01-13
US13/737,350 US8980767B2 (en) 2012-01-13 2013-01-09 Methods and apparatus for processing a substrate

Publications (2)

Publication Number Publication Date
TW201335997A TW201335997A (zh) 2013-09-01
TWI579922B true TWI579922B (zh) 2017-04-21

Family

ID=48780267

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102100951A TWI579922B (zh) 2012-01-13 2013-01-10 用於處理基板的方法與裝置

Country Status (6)

Country Link
US (2) US8980767B2 (https=)
JP (1) JP2015510260A (https=)
KR (3) KR20140121833A (https=)
CN (1) CN107464751B (https=)
TW (1) TWI579922B (https=)
WO (1) WO2013106552A1 (https=)

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JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2015073185A1 (en) * 2013-11-12 2015-05-21 Applied Materials, Inc. Pyrometer background elimination
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN110119072B (zh) * 2018-02-06 2021-05-14 志圣科技（广州）有限公司 曝光组件及曝光装置
US20220199379A1 (en) * 2019-04-26 2022-06-23 Lam Research Corporation High temperature heating of a substrate in a processing chamber
WO2021034508A1 (en) 2019-08-16 2021-02-25 Lam Research Corporation Spatially tunable deposition to compensate within wafer differential bow
WO2021138018A1 (en) 2020-01-03 2021-07-08 Lam Research Corporation Station-to-station control of backside bow compensation deposition
KR20260029373A (ko) 2020-01-30 2026-03-04 램 리써치 코포레이션 국부적인 응력 변조를 위한 uv 경화
US12176242B2 (en) * 2022-01-21 2024-12-24 Applied Materials, Inc. Rotatable thermal processing chamber
US20240288220A1 (en) * 2023-02-24 2024-08-29 Applied Materials, Inc. Convective substrate cooling with minimal pressure change

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US20040266123A1 (en) * 2002-05-08 2004-12-30 Applied Materials, Inc. Electron beam treatment of SixNy films
US20080179010A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with vacuum chuck
US20080280453A1 (en) * 2007-05-09 2008-11-13 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US20100254064A1 (en) * 2007-09-06 2010-10-07 Kinya Miyashita Method for manufacturing gas supply structure in electrostatic chuck apparatus, gas supply structure in electrostatic chuck apparatus, and electrostatic chuck apparatus

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US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
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JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
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US20040266123A1 (en) * 2002-05-08 2004-12-30 Applied Materials, Inc. Electron beam treatment of SixNy films
US20080179010A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Bevel etcher with vacuum chuck
US20080280453A1 (en) * 2007-05-09 2008-11-13 Applied Materials, Inc. Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber
US20100254064A1 (en) * 2007-09-06 2010-10-07 Kinya Miyashita Method for manufacturing gas supply structure in electrostatic chuck apparatus, gas supply structure in electrostatic chuck apparatus, and electrostatic chuck apparatus

Also Published As

Publication number Publication date
KR20140121833A (ko) 2014-10-16
KR20200093702A (ko) 2020-08-05
TW201335997A (zh) 2013-09-01
JP2015510260A (ja) 2015-04-02
US20150206721A1 (en) 2015-07-23
CN104025280A (zh) 2014-09-03
KR200496202Y1 (ko) 2022-11-29
US8980767B2 (en) 2015-03-17
WO2013106552A1 (en) 2013-07-18
CN107464751B (zh) 2020-09-11
KR20200001978U (ko) 2020-09-08
US20130183834A1 (en) 2013-07-18
CN107464751A (zh) 2017-12-12

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