CN107464751B - 用于处理基板的方法和设备 - Google Patents

用于处理基板的方法和设备 Download PDF

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Publication number
CN107464751B
CN107464751B CN201610946323.9A CN201610946323A CN107464751B CN 107464751 B CN107464751 B CN 107464751B CN 201610946323 A CN201610946323 A CN 201610946323A CN 107464751 B CN107464751 B CN 107464751B
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China
Prior art keywords
substrate
gas
processing
backside
processing chamber
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CN201610946323.9A
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Chinese (zh)
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CN107464751A (zh
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马修·罗杰斯
马丁·里普利
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Applied Materials Inc
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Applied Materials Inc
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Priority claimed from CN201380004591.3A external-priority patent/CN104025280B/zh
Publication of CN107464751A publication Critical patent/CN107464751A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32522—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6504—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
CN201610946323.9A 2012-01-13 2013-01-10 用于处理基板的方法和设备 Active CN107464751B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261586186P 2012-01-13 2012-01-13
US61/586,186 2012-01-13
US13/737,350 2013-01-09
US13/737,350 US8980767B2 (en) 2012-01-13 2013-01-09 Methods and apparatus for processing a substrate
CN201380004591.3A CN104025280B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201380004591.3A Division CN104025280B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Publications (2)

Publication Number Publication Date
CN107464751A CN107464751A (zh) 2017-12-12
CN107464751B true CN107464751B (zh) 2020-09-11

Family

ID=48780267

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610946323.9A Active CN107464751B (zh) 2012-01-13 2013-01-10 用于处理基板的方法和设备

Country Status (6)

Country Link
US (2) US8980767B2 (https=)
JP (1) JP2015510260A (https=)
KR (3) KR20140121833A (https=)
CN (1) CN107464751B (https=)
TW (1) TWI579922B (https=)
WO (1) WO2013106552A1 (https=)

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JP6065366B2 (ja) * 2012-01-30 2017-01-25 富士通セミコンダクター株式会社 半導体装置の製造方法
WO2015073185A1 (en) * 2013-11-12 2015-05-21 Applied Materials, Inc. Pyrometer background elimination
US9881788B2 (en) * 2014-05-22 2018-01-30 Lam Research Corporation Back side deposition apparatus and applications
CN106298581B (zh) * 2015-05-13 2020-10-13 盛美半导体设备(上海)股份有限公司 光辐射加热刻蚀装置及方法
US10260149B2 (en) * 2016-04-28 2019-04-16 Applied Materials, Inc. Side inject nozzle design for processing chamber
KR102528559B1 (ko) * 2016-07-26 2023-05-04 삼성전자주식회사 대면적 기판 제조 장치
US10851457B2 (en) 2017-08-31 2020-12-01 Lam Research Corporation PECVD deposition system for deposition on selective side of the substrate
CN110119072B (zh) * 2018-02-06 2021-05-14 志圣科技（广州）有限公司 曝光组件及曝光装置
US20220199379A1 (en) * 2019-04-26 2022-06-23 Lam Research Corporation High temperature heating of a substrate in a processing chamber
WO2021034508A1 (en) 2019-08-16 2021-02-25 Lam Research Corporation Spatially tunable deposition to compensate within wafer differential bow
WO2021138018A1 (en) 2020-01-03 2021-07-08 Lam Research Corporation Station-to-station control of backside bow compensation deposition
KR20260029373A (ko) 2020-01-30 2026-03-04 램 리써치 코포레이션 국부적인 응력 변조를 위한 uv 경화
US12176242B2 (en) * 2022-01-21 2024-12-24 Applied Materials, Inc. Rotatable thermal processing chamber
US20240288220A1 (en) * 2023-02-24 2024-08-29 Applied Materials, Inc. Convective substrate cooling with minimal pressure change

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US5267607A (en) * 1991-05-28 1993-12-07 Tokyo Electron Limited Substrate processing apparatus
US5660472A (en) * 1994-12-19 1997-08-26 Applied Materials, Inc. Method and apparatus for measuring substrate temperatures
US6465043B1 (en) * 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US5960555A (en) * 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US5879128A (en) * 1996-07-24 1999-03-09 Applied Materials, Inc. Lift pin and support pin apparatus for a processing chamber
US5920797A (en) * 1996-12-03 1999-07-06 Applied Materials, Inc. Method for gaseous substrate support
US6413871B2 (en) * 1999-06-22 2002-07-02 Applied Materials, Inc. Nitrogen treatment of polished halogen-doped silicon glass
US6803546B1 (en) * 1999-07-08 2004-10-12 Applied Materials, Inc. Thermally processing a substrate
US6375748B1 (en) * 1999-09-01 2002-04-23 Applied Materials, Inc. Method and apparatus for preventing edge deposition
JP2001102321A (ja) * 1999-09-17 2001-04-13 Applied Materials Inc 半導体製造装置における基板加熱方法及び半導体製造装置
EP1124252A2 (en) * 2000-02-10 2001-08-16 Applied Materials, Inc. Apparatus and process for processing substrates
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
KR100838874B1 (ko) * 2000-07-06 2008-06-16 어플라이드 머티어리얼스, 인코포레이티드 기판을 열 처리하는 시스템 및 방법
US6521292B1 (en) * 2000-08-04 2003-02-18 Applied Materials, Inc. Substrate support including purge ring having inner edge aligned to wafer edge
JP3494435B2 (ja) * 2001-02-27 2004-02-09 東京エレクトロン株式会社 基板処理装置
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Also Published As

Publication number Publication date
KR20140121833A (ko) 2014-10-16
KR20200093702A (ko) 2020-08-05
TW201335997A (zh) 2013-09-01
JP2015510260A (ja) 2015-04-02
TWI579922B (zh) 2017-04-21
US20150206721A1 (en) 2015-07-23
CN104025280A (zh) 2014-09-03
KR200496202Y1 (ko) 2022-11-29
US8980767B2 (en) 2015-03-17
WO2013106552A1 (en) 2013-07-18
KR20200001978U (ko) 2020-09-08
US20130183834A1 (en) 2013-07-18
CN107464751A (zh) 2017-12-12

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