JP2015204301A - 半導体装置および半導体装置の製造方法 - Google Patents

半導体装置および半導体装置の製造方法 Download PDF

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Publication number
JP2015204301A
JP2015204301A JP2014081239A JP2014081239A JP2015204301A JP 2015204301 A JP2015204301 A JP 2015204301A JP 2014081239 A JP2014081239 A JP 2014081239A JP 2014081239 A JP2014081239 A JP 2014081239A JP 2015204301 A JP2015204301 A JP 2015204301A
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Japan
Prior art keywords
electrode film
type silicon
semiconductor device
silicon substrate
layer
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Pending
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JP2014081239A
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English (en)
Japanese (ja)
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JP2015204301A5 (enExample
Inventor
考男 加地
Takao Kaji
考男 加地
政良 多留谷
Masayoshi Taruya
政良 多留谷
康博 吉浦
Yasuhiro Yoshiura
康博 吉浦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2014081239A priority Critical patent/JP2015204301A/ja
Priority to US14/585,456 priority patent/US9755037B2/en
Priority to DE102015202123.8A priority patent/DE102015202123B4/de
Priority to CN201510160872.9A priority patent/CN104979179B/zh
Publication of JP2015204301A publication Critical patent/JP2015204301A/ja
Publication of JP2015204301A5 publication Critical patent/JP2015204301A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/0485—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/411—PN diodes having planar bodies

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2014081239A 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法 Pending JP2015204301A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014081239A JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法
US14/585,456 US9755037B2 (en) 2014-04-10 2014-12-30 Semiconductor device and method of manufacturing semiconductor device
DE102015202123.8A DE102015202123B4 (de) 2014-04-10 2015-02-06 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
CN201510160872.9A CN104979179B (zh) 2014-04-10 2015-04-07 半导体装置以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014081239A JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法

Publications (2)

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JP2015204301A true JP2015204301A (ja) 2015-11-16
JP2015204301A5 JP2015204301A5 (enExample) 2016-08-04

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JP2014081239A Pending JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法

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US (1) US9755037B2 (enExample)
JP (1) JP2015204301A (enExample)
CN (1) CN104979179B (enExample)
DE (1) DE102015202123B4 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017103404A (ja) * 2015-12-04 2017-06-08 シャープ株式会社 半導体装置およびその製造方法
WO2017126344A1 (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 電力用半導体装置および電力用半導体装置を製造する方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165673A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH03183126A (ja) * 1989-12-13 1991-08-09 Kawasaki Steel Corp 半導体装置の製造方法
JPH0521372A (ja) * 1991-07-17 1993-01-29 Nippondenso Co Ltd 半導体装置の電極形成方法
JPH0864799A (ja) * 1994-08-18 1996-03-08 Toshiba Corp 半導体チップおよびそれを用いた半導体装置の製造方法
JPH11274102A (ja) * 1998-03-25 1999-10-08 Matsushita Electron Corp 半導体装置の製造方法及びその製造装置
JP2008004739A (ja) * 2006-06-22 2008-01-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP2013194291A (ja) * 2012-03-21 2013-09-30 Mitsubishi Electric Corp 半導体装置およびその半導体装置の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69223868T2 (de) 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
DE19734434C1 (de) * 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JP3703435B2 (ja) * 2002-02-05 2005-10-05 三菱電機株式会社 半導体装置
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
JP4221012B2 (ja) 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
JP2010129585A (ja) 2008-11-25 2010-06-10 Toyota Motor Corp 半導体装置の製造方法
WO2010109572A1 (ja) * 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
JP2011049393A (ja) * 2009-08-27 2011-03-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4970530B2 (ja) * 2009-12-28 2012-07-11 株式会社ノリタケカンパニーリミテド 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池
JP5585379B2 (ja) * 2010-10-21 2014-09-10 富士電機株式会社 半導体装置の製造方法およびその製造装置
JP5925103B2 (ja) 2012-10-15 2016-05-25 株式会社デンソーアイティーラボラトリ 経路探索装置、ナビゲーション装置、経路探索方法、経路探索プログラム、及びナビゲーションプログラム

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165673A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH03183126A (ja) * 1989-12-13 1991-08-09 Kawasaki Steel Corp 半導体装置の製造方法
JPH0521372A (ja) * 1991-07-17 1993-01-29 Nippondenso Co Ltd 半導体装置の電極形成方法
JPH0864799A (ja) * 1994-08-18 1996-03-08 Toshiba Corp 半導体チップおよびそれを用いた半導体装置の製造方法
JPH11274102A (ja) * 1998-03-25 1999-10-08 Matsushita Electron Corp 半導体装置の製造方法及びその製造装置
JP2008004739A (ja) * 2006-06-22 2008-01-10 Fuji Electric Device Technology Co Ltd 半導体装置
JP2013194291A (ja) * 2012-03-21 2013-09-30 Mitsubishi Electric Corp 半導体装置およびその半導体装置の製造方法

Also Published As

Publication number Publication date
CN104979179A (zh) 2015-10-14
DE102015202123A1 (de) 2015-10-15
US9755037B2 (en) 2017-09-05
DE102015202123B4 (de) 2024-12-05
CN104979179B (zh) 2018-03-16
US20150294871A1 (en) 2015-10-15

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