JP2015204301A5 - - Google Patents

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Publication number
JP2015204301A5
JP2015204301A5 JP2014081239A JP2014081239A JP2015204301A5 JP 2015204301 A5 JP2015204301 A5 JP 2015204301A5 JP 2014081239 A JP2014081239 A JP 2014081239A JP 2014081239 A JP2014081239 A JP 2014081239A JP 2015204301 A5 JP2015204301 A5 JP 2015204301A5
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JP
Japan
Prior art keywords
electrode film
type silicon
silicon substrate
silicon layer
titanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014081239A
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English (en)
Japanese (ja)
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JP2015204301A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2014081239A priority Critical patent/JP2015204301A/ja
Priority claimed from JP2014081239A external-priority patent/JP2015204301A/ja
Priority to US14/585,456 priority patent/US9755037B2/en
Priority to DE102015202123.8A priority patent/DE102015202123B4/de
Priority to CN201510160872.9A priority patent/CN104979179B/zh
Publication of JP2015204301A publication Critical patent/JP2015204301A/ja
Publication of JP2015204301A5 publication Critical patent/JP2015204301A5/ja
Pending legal-status Critical Current

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JP2014081239A 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法 Pending JP2015204301A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014081239A JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法
US14/585,456 US9755037B2 (en) 2014-04-10 2014-12-30 Semiconductor device and method of manufacturing semiconductor device
DE102015202123.8A DE102015202123B4 (de) 2014-04-10 2015-02-06 Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
CN201510160872.9A CN104979179B (zh) 2014-04-10 2015-04-07 半导体装置以及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014081239A JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2015204301A JP2015204301A (ja) 2015-11-16
JP2015204301A5 true JP2015204301A5 (enExample) 2016-08-04

Family

ID=54193404

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014081239A Pending JP2015204301A (ja) 2014-04-10 2014-04-10 半導体装置および半導体装置の製造方法

Country Status (4)

Country Link
US (1) US9755037B2 (enExample)
JP (1) JP2015204301A (enExample)
CN (1) CN104979179B (enExample)
DE (1) DE102015202123B4 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017103404A (ja) * 2015-12-04 2017-06-08 シャープ株式会社 半導体装置およびその製造方法
WO2017126344A1 (ja) * 2016-01-19 2017-07-27 三菱電機株式会社 電力用半導体装置および電力用半導体装置を製造する方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165673A (en) * 1979-06-12 1980-12-24 Fujitsu Ltd Semiconductor device
JPS6439775A (en) * 1987-08-06 1989-02-10 Fuji Electric Co Ltd Formation of electrode film of semiconductor device
JPH03183126A (ja) * 1989-12-13 1991-08-09 Kawasaki Steel Corp 半導体装置の製造方法
JP3127494B2 (ja) * 1991-07-17 2001-01-22 株式会社デンソー 半導体装置の電極形成方法
DE69223868T2 (de) 1991-07-17 1998-09-03 Denso Corp Verfahren zur Herstellung von Elektroden eines Halbleiterbauelements
JPH0864799A (ja) * 1994-08-18 1996-03-08 Toshiba Corp 半導体チップおよびそれを用いた半導体装置の製造方法
DE19734434C1 (de) * 1997-08-08 1998-12-10 Siemens Ag Halbleiterkörper mit Rückseitenmetallisierung und Verfahren zu deren Herstellung
JPH11274102A (ja) * 1998-03-25 1999-10-08 Matsushita Electron Corp 半導体装置の製造方法及びその製造装置
JP3703435B2 (ja) * 2002-02-05 2005-10-05 三菱電機株式会社 半導体装置
US8575474B2 (en) * 2006-03-20 2013-11-05 Heracus Precious Metals North America Conshohocken LLC Solar cell contacts containing aluminum and at least one of boron, titanium, nickel, tin, silver, gallium, zinc, indium and copper
JP4221012B2 (ja) 2006-06-12 2009-02-12 トヨタ自動車株式会社 半導体装置とその製造方法
JP4967472B2 (ja) * 2006-06-22 2012-07-04 富士電機株式会社 半導体装置
JP5381420B2 (ja) * 2008-07-22 2014-01-08 富士電機株式会社 半導体装置
JP2010129585A (ja) 2008-11-25 2010-06-10 Toyota Motor Corp 半導体装置の製造方法
WO2010109572A1 (ja) * 2009-03-23 2010-09-30 トヨタ自動車株式会社 半導体装置
JP2011049393A (ja) * 2009-08-27 2011-03-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4970530B2 (ja) * 2009-12-28 2012-07-11 株式会社ノリタケカンパニーリミテド 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池
JP5585379B2 (ja) * 2010-10-21 2014-09-10 富士電機株式会社 半導体装置の製造方法およびその製造装置
JP5669780B2 (ja) * 2012-03-21 2015-02-18 三菱電機株式会社 半導体装置の製造方法
JP5925103B2 (ja) 2012-10-15 2016-05-25 株式会社デンソーアイティーラボラトリ 経路探索装置、ナビゲーション装置、経路探索方法、経路探索プログラム、及びナビゲーションプログラム

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