JP2016072630A5 - - Google Patents
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- Publication number
- JP2016072630A5 JP2016072630A5 JP2015187791A JP2015187791A JP2016072630A5 JP 2016072630 A5 JP2016072630 A5 JP 2016072630A5 JP 2015187791 A JP2015187791 A JP 2015187791A JP 2015187791 A JP2015187791 A JP 2015187791A JP 2016072630 A5 JP2016072630 A5 JP 2016072630A5
- Authority
- JP
- Japan
- Prior art keywords
- doping
- semiconductor
- mask
- semiconductor according
- dopant impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 14
- 239000002019 doping agent Substances 0.000 claims 10
- 239000012535 impurity Substances 0.000 claims 10
- 239000000463 material Substances 0.000 claims 6
- 238000000151 deposition Methods 0.000 claims 3
- 238000002513 implantation Methods 0.000 claims 3
- 238000000137 annealing Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000007669 thermal treatment Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1459130 | 2014-09-26 | ||
| FR1459130A FR3026557B1 (fr) | 2014-09-26 | 2014-09-26 | Procede de dopage d'un semi-conducteur a base de gan |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016072630A JP2016072630A (ja) | 2016-05-09 |
| JP2016072630A5 true JP2016072630A5 (enExample) | 2018-11-01 |
| JP6847573B2 JP6847573B2 (ja) | 2021-03-24 |
Family
ID=51866239
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015187791A Expired - Fee Related JP6847573B2 (ja) | 2014-09-26 | 2015-09-25 | ＧａＮを主成分とする半導体をドープするための方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9496348B2 (enExample) |
| EP (1) | EP3001448A1 (enExample) |
| JP (1) | JP6847573B2 (enExample) |
| FR (1) | FR3026557B1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6439642B2 (ja) * | 2015-09-30 | 2018-12-19 | 豊田合成株式会社 | Ｍｐｓダイオードの製造方法 |
| JP6402746B2 (ja) * | 2016-05-27 | 2018-10-10 | 株式会社豊田中央研究所 | 半導体基板と、その調整方法と、半導体装置 |
| JP6669029B2 (ja) * | 2016-09-28 | 2020-03-18 | 豊田合成株式会社 | 半導体装置の製造方法 |
| WO2019123763A1 (ja) * | 2017-12-19 | 2019-06-27 | 株式会社Sumco | Ｉｉｉ族窒化物半導体基板の製造方法 |
| US12142642B2 (en) * | 2018-06-20 | 2024-11-12 | Lawrence Livermore National Security, Llc | Field assisted interfacial diffusion doping through heterostructure design |
| US11881404B2 (en) * | 2020-02-11 | 2024-01-23 | QROMIS, Inc. | Method and system for diffusing magnesium in gallium nitride materials using sputtered magnesium sources |
| WO2022025080A1 (ja) * | 2020-07-29 | 2022-02-03 | 京セラ株式会社 | 半導体素子の製造方法、半導体素子及び半導体装置 |
| US11621168B1 (en) | 2022-07-12 | 2023-04-04 | Gyrotron Technology, Inc. | Method and system for doping semiconductor materials |
| DE102022130078A1 (de) | 2022-11-14 | 2024-05-16 | Helmholtz-Zentrum Dresden - Rossendorf E. V. | Verfahren zum herstellen p dotierter und n dotierter gruppe-iii-nitrid-verbindungshalbleiter und eines halbleiterbauelements |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53104158A (en) * | 1977-02-23 | 1978-09-11 | Toshiba Corp | Manufacture for semiconductor device |
| JPS5445571A (en) * | 1977-09-17 | 1979-04-10 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS57501656A (enExample) | 1980-10-28 | 1982-09-09 | ||
| US5296394A (en) * | 1990-12-26 | 1994-03-22 | Electronics And Telecommunications Research Institute | Manufacturing method of GaAs metal semiconductor FET |
| US5306662A (en) | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
| KR940007668B1 (ko) * | 1991-12-26 | 1994-08-22 | 재단법인 한국전자통신연구소 | 갈륨비소 금속반도체 전계효과 트랜지스터의 제조방법 |
| JPH0963982A (ja) * | 1995-08-28 | 1997-03-07 | Koichi Ishida | ノックオンにより伝導型を制御して作成した半導体装置 |
| US5766695A (en) | 1996-11-27 | 1998-06-16 | Hughes Electronics Corporation | Method for reducing surface layer defects in semiconductor materials having a volatile species |
| US7589004B2 (en) | 2005-06-21 | 2009-09-15 | Los Alamos National Security, Llc | Method for implantation of high dopant concentrations in wide band gap materials |
| KR100661602B1 (ko) * | 2005-12-09 | 2006-12-26 | 삼성전기주식회사 | 수직 구조 질화갈륨계 ｌｅｄ 소자의 제조방법 |
| US7419892B2 (en) * | 2005-12-13 | 2008-09-02 | Cree, Inc. | Semiconductor devices including implanted regions and protective layers and methods of forming the same |
| US9040398B2 (en) | 2006-05-16 | 2015-05-26 | Cree, Inc. | Method of fabricating seminconductor devices including self aligned refractory contacts |
| JP2008135700A (ja) * | 2006-11-01 | 2008-06-12 | Furukawa Electric Co Ltd:The | Ｉｉｉ族窒化物膜の製造方法及びｉｉｉ族窒化物半導体素子 |
| US8093597B2 (en) | 2007-06-25 | 2012-01-10 | International Rectifier Corporation | In situ dopant implantation and growth of a III-nitride semiconductor body |
| US7994027B2 (en) | 2008-05-09 | 2011-08-09 | George Mason Intellectual Properties, Inc. | Microwave heating for semiconductor nanostructure fabrication |
| US7977224B2 (en) | 2008-12-03 | 2011-07-12 | The United States Of America As Represented By The Secretary Of The Army | Method using multiple layer annealing cap for fabricating group III-nitride semiconductor device structures and devices formed thereby |
| US8518808B2 (en) | 2010-09-17 | 2013-08-27 | The United States Of America, As Represented By The Secretary Of The Navy | Defects annealing and impurities activation in III-nitride compound |
| US20130056793A1 (en) | 2011-09-07 | 2013-03-07 | Applied Materials, Inc. | Providing group v and group vi over pressure for thermal treatment of compound semiconductor thin films |
| US10460955B2 (en) | 2014-08-25 | 2019-10-29 | The United States Of America As Represented By The Secretary Of The Army | Methodology for annealing group III-nitride semiconductor device structures using novel weighted cover systems |
-
2014
- 2014-09-26 FR FR1459130A patent/FR3026557B1/fr not_active Expired - Fee Related
-
2015
- 2015-09-08 EP EP15184348.9A patent/EP3001448A1/fr not_active Withdrawn
- 2015-09-16 US US14/855,761 patent/US9496348B2/en not_active Expired - Fee Related
- 2015-09-25 JP JP2015187791A patent/JP6847573B2/ja not_active Expired - Fee Related
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