JP2015173259A - 酸化物、半導体装置、モジュールおよび電子機器 - Google Patents
酸化物、半導体装置、モジュールおよび電子機器 Download PDFInfo
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- JP2015173259A JP2015173259A JP2015027950A JP2015027950A JP2015173259A JP 2015173259 A JP2015173259 A JP 2015173259A JP 2015027950 A JP2015027950 A JP 2015027950A JP 2015027950 A JP2015027950 A JP 2015027950A JP 2015173259 A JP2015173259 A JP 2015173259A
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- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000001350 scanning transmission electron microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000010454 slate Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 229910002076 stabilized zirconia Inorganic materials 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
本発明の一態様は、面上の酸化物であって、平板状のIn−Ga−Zn酸化物を複数有し、複数の平板状のIn−Ga−Zn酸化物のそれぞれは、結晶構造を有し、複数の平板状のIn−Ga−Zn酸化物のそれぞれは、第1の層と、第2の層と、第3の層と、を有し、第1の層は、ガリウム原子と、亜鉛原子と、酸素原子と、を有し、第2の層は、インジウム原子と、酸素原子と、を有し、第3の層は、ガリウム原子と、亜鉛原子と、酸素原子と、を有し、複数の平板状のIn−Ga−Zn酸化物のそれぞれの平面は、面の法線ベクトルに概略垂直な方向を向いている酸化物である。
または、本発明の一態様は、(1)において、複数の平板状のIn−Ga−Zn酸化物を有し、複数の平板状のIn−Ga−Zn酸化物は、第1の平板状のIn−Ga−Zn酸化物、第2の平板状のIn−Ga−Zn酸化物と、第3の平板状のIn−Ga−Zn酸化物と、を有し、第1の平板状のIn−Ga−Zn酸化物は、第2の平板状のIn−Ga−Zn酸化物と、第3の平板状のIn−Ga−Zn酸化物との間に設けられ、第1の平板状のIn−Ga−Zn酸化物の平面は、面の法線ベクトルに概略垂直な方向を向いていない酸化物である。
または、本発明の一態様は、(1)または(2)において、複数の平板状のIn−Ga−Zn酸化物のそれぞれの組成式がInGaZnO4である酸化物である。
または、本発明の一態様は、(1)乃至(3)のいずれか一に記載の結晶性酸化物を有する半導体と、絶縁体と、導電体と、を有し、絶縁体は半導体と接する領域を有し、導電体は、絶縁体を介して導電体と、半導体と、が互いに重なる領域を有する半導体装置である。
または、本発明の一態様は、(4)に記載の半導体装置と、プリント基板と、を有するモジュールである。
または、本発明の一態様は、(4)に記載の半導体装置、または、(5)に記載のモジュールと、スピーカー、操作キー、または、バッテリーと、を有する電子機器である。
以下では、本実施の形態に係る結晶性を有する酸化物半導体であるCAAC−OS(C−Axis Aligned Crystalline Oxide Semiconductor)について図を用いて説明する。CAAC−OSは、a軸およびb軸の配向は不規則であるが、c軸配向性を有し、かつc軸が被形成面または上面の法線ベクトルに平行な方向を向いている酸化物半導体である。
以下では、CAAC−OSおよびnc−OSの成膜モデルについて説明する。
なお、CAAC−OSは、複数の構造を有する場合がある。
以下では、CAAC−OSの成膜モデルにおいて記載のターゲットの劈開面について説明する。
以下では、前述したCAAC−OSを成膜することが可能な成膜装置について説明する。
以下では、本発明の一態様に係るトランジスタの構造について説明する。
図38(A)および図38(B)は、本発明の一態様のトランジスタの上面図および断面図である。図38(A)は上面図であり、図38(B)は、図38(A)に示す一点鎖線A1−A2、および一点鎖線A3−A4に対応する断面図である。なお、図38(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
図42(A)および図42(B)は、本発明の一態様のトランジスタの上面図および断面図である。図42(A)は上面図であり、図42(B)は、図42(A)に示す一点鎖線J1−J2、および一点鎖線J3−J4に対応する断面図である。なお、図42(A)の上面図では、図の明瞭化のために一部の要素を省いて図示している。
以下では、本発明の一態様に係る半導体装置を例示する。
以下では、上述したトランジスタ、または記憶装置を含むRFタグについて、図48を用いて説明する。
以下では、本発明の一態様に係るRFタグの使用例について図49を用いて説明する。RFタグの用途は広範にわたるが、例えば、紙幣、硬貨、有価証券類、無記名債券類、証書類(運転免許証や住民票等、図49(A)参照。)、包装用容器類(包装紙やボトル等、図49(C)参照。)、記録媒体(DVDやビデオテープ等、図49(B)参照。)、乗り物類(自転車等、図49(D)参照。)、身の回り品(鞄や眼鏡等)、食品類、植物類、動物類、人体、衣類、生活用品類、薬品や薬剤を含む医療品、または電子機器(液晶表示装置、EL表示装置、テレビジョン装置、または携帯電話)等の物品、もしくは各物品に取り付ける荷札(図49(E)および図49(F)参照。)等に設けて使用することができる。
以下では、上述したトランジスタや上述した記憶装置などの半導体装置を含むCPUについて説明する。
以下では、本発明の一態様に係る表示装置の構成例について説明する。
図52(A)には、本発明の一態様に係る表示装置の上面図を示す。また、図52(B)には、本発明の一態様に係る表示装置の画素に液晶素子を用いた場合における画素回路を示す。また、図52(C)には、本発明の一態様に係る表示装置の画素に有機EL素子を用いた場合における画素回路を示す。
また、画素の回路構成の一例を図52(B)に示す。ここでは、VA型液晶表示装置の画素などに適用することができる画素回路を示す。
画素の回路構成の他の一例を図52(C)に示す。ここでは、有機EL素子を用いた表示装置の画素構造を示す。
以下では、本発明の一態様に係る半導体装置を適用した表示モジュールについて、図53を用いて説明を行う。
本発明の一態様に係る半導体装置は、表示機器、パーソナルコンピュータ、記録媒体を備えた画像再生装置(代表的にはDVD:Digital Versatile Disc等の記録媒体を再生し、その画像を表示しうるディスプレイを有する装置)に用いることができる。その他に、本発明の一態様に係る半導体装置を用いることができる電子機器として、携帯電話、携帯型を含むゲーム機、携帯データ端末、電子書籍端末、ビデオカメラ、デジタルスチルカメラ等のカメラ、ゴーグル型ディスプレイ(ヘッドマウントディスプレイ)、ナビゲーションシステム、音響再生装置(カーオーディオ、デジタルオーディオプレイヤー等)、複写機、ファクシミリ、プリンタ、プリンタ複合機、現金自動預け入れ払い機(ATM)、自動販売機などが挙げられる。これら電子機器の具体例を図54に示す。
以下では、本発明の一態様に係る電子機器の一例である表示領域または発光領域に曲面を有する電子機器について、図55を参照しながら説明する。なお、ここでは、電子機器の一例として、情報機器、特に携帯性を有する情報機器(携帯機器)について説明する。携帯性を有する情報機器としては、例えば、携帯電話機(ファブレット、スマートフォン(スマホ))、タブレット端末(スレートPC)なども含まれる。
携帯機器1300Aは、例えば電話、電子メール作成閲覧、手帳または情報閲覧などの機能から選ばれた一つまたは複数の機能を有する。
100a ペレット
100b ペレット
101 イオン
102 酸化亜鉛粒子
120 基板
130 ターゲット
161 領域
162 領域
163 領域
164 アトミックボイド
310 電子銃室
312 光学系
314 試料室
316 光学系
318 カメラ
320 観察室
322 フィルム室
324 電子
328 物質
332 蛍光板
400 基板
402 絶縁体
404 導電体
406a 半導体
406b 半導体
406c 半導体
408 絶縁体
412 絶縁体
413 導電体
416a 導電体
416b 導電体
418 絶縁体
423a 低抵抗領域
423b 低抵抗領域
424a 導電体
424b 導電体
426a 導電体
426b 導電体
428 絶縁体
600 基板
604 導電体
606a 半導体
606b 半導体
606c 半導体
612 絶縁体
613 導電体
616a 導電体
616b 導電体
618 絶縁体
620 絶縁体
700 成膜装置
701 大気側基板供給室
702 大気側基板搬送室
703a ロードロック室
703b アンロードロック室
704 搬送室
705 基板加熱室
706a 成膜室
706b 成膜室
706c 成膜室
751 クライオトラップ
752 ステージ
761 カセットポート
762 アライメントポート
763 搬送ロボット
764 ゲートバルブ
765 加熱ステージ
766 ターゲット
767 防着板
768 基板ステージ
769 基板
770 真空ポンプ
771 クライオポンプ
772 ターボ分子ポンプ
780 マスフローコントローラ
781 精製機
782 ガス加熱機構
800 RFタグ
801 通信器
802 アンテナ
803 無線信号
804 アンテナ
805 整流回路
806 定電圧回路
807 復調回路
808 変調回路
809 論理回路
810 記憶回路
811 ROM
901 筐体
902 筐体
903 表示部
904 表示部
905 マイクロフォン
906 スピーカー
907 操作キー
908 スタイラス
911 筐体
912 筐体
913 表示部
914 表示部
915 接続部
916 操作キー
921 筐体
922 表示部
923 キーボード
924 ポインティングデバイス
931 筐体
932 冷蔵室用扉
933 冷凍室用扉
941 筐体
942 筐体
943 表示部
944 操作キー
945 レンズ
946 接続部
951 車体
952 車輪
953 ダッシュボード
954 ライト
1189 ROMインターフェース
1190 基板
1191 ALU
1192 ALUコントローラ
1193 インストラクションデコーダ
1194 インタラプトコントローラ
1195 タイミングコントローラ
1196 レジスタ
1197 レジスタコントローラ
1198 バスインターフェース
1199 ROM
1200 記憶素子
1201 回路
1202 回路
1203 スイッチ
1204 スイッチ
1206 論理素子
1207 容量素子
1208 容量素子
1209 トランジスタ
1210 トランジスタ
1213 トランジスタ
1214 トランジスタ
1220 回路
1300A 携帯機器
1300B 携帯機器
1300C 携帯機器
1310 筐体
1311 領域
1312 領域
2100 トランジスタ
2200 トランジスタ
2201 絶縁体
2202 導電体
2203 導電体
2204 絶縁体
2205 導電体
2206 導電体
2207 絶縁体
2208 絶縁体
2211 半導体基板
2212 絶縁層
2213 ゲート電極
2214 ゲート絶縁体
2215 ソース領域およびドレイン領域
3001 配線
3002 配線
3003 配線
3004 配線
3005 配線
3200 トランジスタ
3300 トランジスタ
3400 容量素子
4000 RFタグ
5000 基板
5001 画素部
5002 走査線駆動回路
5003 走査線駆動回路
5004 信号線駆動回路
5010 容量配線
5012 ゲート配線
5013 ゲート配線
5014 ドレイン電極
5016 トランジスタ
5017 トランジスタ
5018 液晶素子
5019 液晶素子
5020 画素
5021 スイッチング用トランジスタ
5022 駆動用トランジスタ
5023 容量素子
5024 発光素子
5025 信号線
5026 走査線
5027 電源線
5028 共通電極
8000 表示モジュール
8001 上部カバー
8002 下部カバー
8003 FPC
8004 タッチパネル
8005 FPC
8006 セル
8007 バックライトユニット
8008 光源
8009 フレーム
8010 プリント基板
8011 バッテリー
Claims (6)
- 面上の酸化物であって、
平板状のIn−Ga−Zn酸化物を複数有し、
前記複数の平板状のIn−Ga−Zn酸化物のそれぞれは、結晶構造を有し、
前記複数の平板状のIn−Ga−Zn酸化物のそれぞれは、第1の層と、第2の層と、第3の層と、を有し、
前記第1の層は、ガリウム原子と、亜鉛原子と、酸素原子と、を有し、
前記第2の層は、インジウム原子と、酸素原子と、を有し、
前記第3の層は、ガリウム原子と、亜鉛原子と、酸素原子と、を有し、
前記複数の平板状のIn−Ga−Zn酸化物のそれぞれの平面は、前記面の法線ベクトルに概略垂直な方向を向いていることを特徴とする酸化物。 - 請求項1において、
複数のIn−Ga−Zn酸化物を有し、
前記複数のIn−Ga−Zn酸化物は、第1の平板状のIn−Ga−Zn酸化物、第2の平板状のIn−Ga−Zn酸化物と、第3の平板状のIn−Ga−Zn酸化物と、を有し、
前記第1の平板状のIn−Ga−Zn酸化物は、結晶構造を有し、
前記第1の平板状のIn−Ga−Zn酸化物は、前記第2の平板状のIn−Ga−Zn酸化物と、前記第3の平板状のIn−Ga−Zn酸化物との間に設けられ、
前記第1の平板状のIn−Ga−Zn酸化物の平面は、前記面の法線ベクトルに概略垂直な方向を向いていないことを特徴とする酸化物。 - 請求項1または請求項2において、
前記複数の平板状のIn−Ga−Zn酸化物のそれぞれの組成式がInGaZnO4であることを特徴とする酸化物。 - 請求項1乃至請求項3のいずれか一に記載の酸化物を有する半導体と、
絶縁体と、
導電体と、を有し、
前記絶縁体は前記半導体と接する領域を有し、
前記導電体は、前記絶縁体を介して、前記導電体と、前記半導体と、が互いに重なる領域を有することを特徴とする半導体装置。 - 請求項4に記載の半導体装置と、
プリント基板と、
を有することを特徴とするモジュール。 - 請求項4に記載の半導体装置、または、請求項5に記載のモジュールと、
スピーカー、操作キー、または、バッテリーと、
を有することを特徴とする電子機器。
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US20150236162A1 (en) | 2015-08-20 |
US9508864B2 (en) | 2016-11-29 |
JP2019195112A (ja) | 2019-11-07 |
TW201543692A (zh) | 2015-11-16 |
TWI685976B (zh) | 2020-02-21 |
WO2015125042A1 (en) | 2015-08-27 |
KR20160120741A (ko) | 2016-10-18 |
KR102317297B1 (ko) | 2021-10-26 |
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