JP2015130490A5 - - Google Patents

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JP2015130490A5
JP2015130490A5 JP2014243308A JP2014243308A JP2015130490A5 JP 2015130490 A5 JP2015130490 A5 JP 2015130490A5 JP 2014243308 A JP2014243308 A JP 2014243308A JP 2014243308 A JP2014243308 A JP 2014243308A JP 2015130490 A5 JP2015130490 A5 JP 2015130490A5
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film
oxide semiconductor
region
insulating film
opening
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JP2014243308A
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JP2015130490A (ja
JP6496132B2 (ja
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JP2014243308A 2013-12-02 2014-12-01 半導体装置 Active JP6496132B2 (ja)

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JP2014243308A JP6496132B2 (ja) 2013-12-02 2014-12-01 半導体装置

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JP2013249165 2013-12-02
JP2013249165 2013-12-02
JP2014243308A JP6496132B2 (ja) 2013-12-02 2014-12-01 半導体装置

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JP2019042109A Division JP6823099B2 (ja) 2013-12-02 2019-03-08 半導体装置

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JP2015130490A JP2015130490A (ja) 2015-07-16
JP2015130490A5 true JP2015130490A5 (enExample) 2018-01-11
JP6496132B2 JP6496132B2 (ja) 2019-04-03

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JP2014243308A Active JP6496132B2 (ja) 2013-12-02 2014-12-01 半導体装置
JP2019042109A Active JP6823099B2 (ja) 2013-12-02 2019-03-08 半導体装置
JP2020150621A Active JP7030917B2 (ja) 2013-12-02 2020-09-08 半導体装置
JP2021001566A Active JP7042935B2 (ja) 2013-12-02 2021-01-07 表示装置
JP2022039971A Active JP7336561B2 (ja) 2013-12-02 2022-03-15 半導体装置
JP2023133851A Active JP7497503B2 (ja) 2013-12-02 2023-08-21 半導体装置
JP2024086798A Withdrawn JP2024119867A (ja) 2013-12-02 2024-05-29 半導体装置
JP2025048294A Pending JP2025089432A (ja) 2013-12-02 2025-03-24 表示装置

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JP2019042109A Active JP6823099B2 (ja) 2013-12-02 2019-03-08 半導体装置
JP2020150621A Active JP7030917B2 (ja) 2013-12-02 2020-09-08 半導体装置
JP2021001566A Active JP7042935B2 (ja) 2013-12-02 2021-01-07 表示装置
JP2022039971A Active JP7336561B2 (ja) 2013-12-02 2022-03-15 半導体装置
JP2023133851A Active JP7497503B2 (ja) 2013-12-02 2023-08-21 半導体装置
JP2024086798A Withdrawn JP2024119867A (ja) 2013-12-02 2024-05-29 半導体装置
JP2025048294A Pending JP2025089432A (ja) 2013-12-02 2025-03-24 表示装置

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US (2) US9601634B2 (enExample)
JP (8) JP6496132B2 (enExample)

Families Citing this family (7)

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WO2016092427A1 (en) 2014-12-10 2016-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
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US9852926B2 (en) * 2015-10-20 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device
US10411003B2 (en) 2016-10-14 2019-09-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN109461660A (zh) * 2018-11-14 2019-03-12 合肥鑫晟光电科技有限公司 一种金属氧化物薄膜及其制备方法、薄膜晶体管和阵列基板
JP7612504B2 (ja) 2021-04-26 2025-01-14 株式会社ジャパンディスプレイ アレイ基板および表示装置

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