JP2015130490A5 - - Google Patents
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- JP2015130490A5 JP2015130490A5 JP2014243308A JP2014243308A JP2015130490A5 JP 2015130490 A5 JP2015130490 A5 JP 2015130490A5 JP 2014243308 A JP2014243308 A JP 2014243308A JP 2014243308 A JP2014243308 A JP 2014243308A JP 2015130490 A5 JP2015130490 A5 JP 2015130490A5
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- film
- oxide semiconductor
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- insulating film
- opening
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Claims (2)
前記第１の導電膜上の第１の絶縁膜と、A first insulating film on the first conductive film;
前記第１の絶縁膜上の酸化物半導体膜と、An oxide semiconductor film on the first insulating film;
前記酸化物半導体膜上の第２の絶縁膜と、A second insulating film on the oxide semiconductor film;
前記第２の絶縁膜上の第１の導電膜及び第２の導電膜と、を有し、A first conductive film and a second conductive film on the second insulating film,
前記酸化物半導体膜は、前記第１の絶縁膜を介して前記第１の導電膜と重なる第１の領域を有し、The oxide semiconductor film has a first region overlapping with the first conductive film with the first insulating film interposed therebetween,
前記第２の絶縁膜は、第１の開口部及び第２の開口部を有し、The second insulating film has a first opening and a second opening,
前記第２の導電膜は、前記第１の開口部を介して前記酸化物半導体膜と電気的に接続され、The second conductive film is electrically connected to the oxide semiconductor film through the first opening,
前記第３の導電膜は、前記第２の開口部を介して前記酸化物半導体膜と電気的に接続され、The third conductive film is electrically connected to the oxide semiconductor film through the second opening;
前記第２の絶縁膜は、第１の膜と、前記第１の膜上の第２の膜と、を有し、The second insulating film includes a first film and a second film on the first film,
前記第２の絶縁膜は、前記第１の領域と重なる領域を有し、The second insulating film has a region overlapping the first region,
前記第２の絶縁膜は、前記酸化物半導体膜の端部と重なる領域を有し、The second insulating film has a region overlapping with an end of the oxide semiconductor film;
前記第１の膜は、前記第１の領域の上面と接する領域を有し、The first film has a region in contact with the upper surface of the first region;
前記第１の膜は、前記酸化物半導体膜の端部と接する領域を有し、The first film has a region in contact with an end of the oxide semiconductor film;
前記第１の膜は、前記第１の絶縁膜と接する領域を有する半導体装置。The semiconductor device, wherein the first film has a region in contact with the first insulating film.
前記第１の導電膜上の第１の絶縁膜と、A first insulating film on the first conductive film;
前記第１の絶縁膜上の酸化物半導体膜と、An oxide semiconductor film on the first insulating film;
前記酸化物半導体膜上の第２の絶縁膜と、A second insulating film on the oxide semiconductor film;
前記第２の絶縁膜上の第１の導電膜及び第２の導電膜と、を有し、A first conductive film and a second conductive film on the second insulating film,
前記第１の導電膜は、前記第１の絶縁膜を介して前記酸化物半導体膜全体と重なる領域を有し、The first conductive film has a region overlapping with the entire oxide semiconductor film through the first insulating film,
前記第２の絶縁膜は、第１の開口部及び第２の開口部を有し、The second insulating film has a first opening and a second opening,
前記第２の導電膜は、前記第１の開口部を介して前記酸化物半導体膜と電気的に接続され、The second conductive film is electrically connected to the oxide semiconductor film through the first opening,
前記第３の導電膜は、前記第２の開口部を介して前記酸化物半導体膜と電気的に接続され、The third conductive film is electrically connected to the oxide semiconductor film through the second opening;
前記第２の絶縁膜は、第１の膜と、前記第１の膜上の第２の膜と、を有し、The second insulating film includes a first film and a second film on the first film,
前記第２の絶縁膜は、前記第１の開口部と前記第２の開口部との間において前記酸化物半導体膜と重なる領域を有し、The second insulating film has a region overlapping with the oxide semiconductor film between the first opening and the second opening,
前記第２の絶縁膜は、前記酸化物半導体膜の端部と重なる領域を有し、The second insulating film has a region overlapping with an end of the oxide semiconductor film;
前記第１の膜は、前記第１の領域の上面と接する領域を有し、The first film has a region in contact with the upper surface of the first region;
前記第１の膜は、前記酸化物半導体膜の端部と接する領域を有し、The first film has a region in contact with an end of the oxide semiconductor film;
前記第１の膜は、前記第１の絶縁膜と接する領域を有する半導体装置。The semiconductor device, wherein the first film has a region in contact with the first insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014243308A JP6496132B2 (en) | 2013-12-02 | 2014-12-01 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013249165 | 2013-12-02 | ||
| JP2013249165 | 2013-12-02 | ||
| JP2014243308A JP6496132B2 (en) | 2013-12-02 | 2014-12-01 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019042109A Division JP6823099B2 (en) | 2013-12-02 | 2019-03-08 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015130490A JP2015130490A (en) | 2015-07-16 |
| JP2015130490A5 true JP2015130490A5 (en) | 2018-01-11 |
| JP6496132B2 JP6496132B2 (en) | 2019-04-03 |
Family
ID=53266007
Family Applications (7)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014243308A Active JP6496132B2 (en) | 2013-12-02 | 2014-12-01 | Semiconductor device |
| JP2019042109A Active JP6823099B2 (en) | 2013-12-02 | 2019-03-08 | Semiconductor device |
| JP2020150621A Active JP7030917B2 (en) | 2013-12-02 | 2020-09-08 | Semiconductor device |
| JP2021001566A Active JP7042935B2 (en) | 2013-12-02 | 2021-01-07 | Display device |
| JP2022039971A Active JP7336561B2 (en) | 2013-12-02 | 2022-03-15 | semiconductor equipment |
| JP2023133851A Active JP7497503B2 (en) | 2013-12-02 | 2023-08-21 | Semiconductor Device |
| JP2024086798A Pending JP2024119867A (en) | 2013-12-02 | 2024-05-29 | Semiconductor Device |
Family Applications After (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019042109A Active JP6823099B2 (en) | 2013-12-02 | 2019-03-08 | Semiconductor device |
| JP2020150621A Active JP7030917B2 (en) | 2013-12-02 | 2020-09-08 | Semiconductor device |
| JP2021001566A Active JP7042935B2 (en) | 2013-12-02 | 2021-01-07 | Display device |
| JP2022039971A Active JP7336561B2 (en) | 2013-12-02 | 2022-03-15 | semiconductor equipment |
| JP2023133851A Active JP7497503B2 (en) | 2013-12-02 | 2023-08-21 | Semiconductor Device |
| JP2024086798A Pending JP2024119867A (en) | 2013-12-02 | 2024-05-29 | Semiconductor Device |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US9601634B2 (en) |
| JP (7) | JP6496132B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113793872A (en) | 2014-12-10 | 2021-12-14 | 株式会社半导体能源研究所 | Semiconductor device and method for manufacturing the same |
| US9653613B2 (en) * | 2015-02-27 | 2017-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US9947728B2 (en) * | 2015-08-25 | 2018-04-17 | Universal Display Corporation | Hybrid MEMS OLED display |
| US9852926B2 (en) * | 2015-10-20 | 2017-12-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device |
| US10411003B2 (en) | 2016-10-14 | 2019-09-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| CN109461660A (en) * | 2018-11-14 | 2019-03-12 | 合肥鑫晟光电科技有限公司 | A kind of metal-oxide film and preparation method thereof, thin film transistor (TFT) and array substrate |
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