JP5128792B2 - Thin film transistor manufacturing method - Google Patents

Thin film transistor manufacturing method Download PDF

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JP5128792B2
JP5128792B2 JP2006236828A JP2006236828A JP5128792B2 JP 5128792 B2 JP5128792 B2 JP 5128792B2 JP 2006236828 A JP2006236828 A JP 2006236828A JP 2006236828 A JP2006236828 A JP 2006236828A JP 5128792 B2 JP5128792 B2 JP 5128792B2
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insulating film
thin film
oxide semiconductor
semiconductor thin
film layer
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JP2008060419A (en
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孝 平尾
守 古田
寛 古田
時宜 松田
孝浩 平松
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財団法人高知県産業振興センター
カシオ計算機株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78609Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current

Description

  The present invention relates to a method of manufacturing a thin film transistor (hereinafter abbreviated as TFT), and more particularly to a method of manufacturing a thin film transistor having an oxide semiconductor thin film layer containing zinc oxide as a main component.

It has been known for a long time that oxides such as zinc oxide or magnesium zinc oxide exhibit excellent semiconductor (active layer) properties.In recent years, with the aim of application to electronic devices such as thin film transistors, light-emitting devices, transparent conductive films, etc. Research and development of semiconductor thin film layers using compounds has been activated.
TFTs using zinc oxide or magnesium zinc oxide as semiconductor thin film layers are electrons compared to amorphous silicon TFTs using amorphous silicon (a-Si: H), which is mainly used in conventional liquid crystal displays, as semiconductor thin film layers. Active development is underway, with advantages such as high mobility, excellent TFT characteristics, and the expectation of high mobility by obtaining a polycrystalline thin film even at low temperatures near room temperature.

  As a TFT (zinc oxide TFT) using zinc oxide as an oxide semiconductor thin film layer, a top gate type (see Patent Document 1 below) and bottom gate type structure have been reported.

As an example of the top gate structure, a structure in which a source / drain electrode, an oxide semiconductor thin film layer, a gate insulating film, and a gate electrode are stacked in this order from the substrate can be exemplified.
As an example of the bottom gate structure, a structure in which a gate electrode, a gate insulating film, an oxide semiconductor thin film layer, a protective insulating film, and a source / drain electrode are stacked in this order from the substrate can be exemplified.

However, in the case of a top-gate thin film transistor, since the upper portion of the oxide semiconductor thin film layer is used as a channel portion, the channel portion is exposed to heat or plasma atmosphere generated when the gate insulating film is formed on the oxide semiconductor thin film layer. The problem of being exposed arises.
In particular, since zinc oxide, which is the main component of the oxide semiconductor thin film layer, does not have sufficient heat resistance, it is a constituent element from the vicinity of the surface of the oxide semiconductor thin film layer (channel portion) due to the thermal history associated with the formation of the gate insulating film. Some desorption of zinc and oxygen occurs. The constituent elements zinc and oxygen are desorbed from the oxide semiconductor thin film, so that defects are generated and the film quality is deteriorated.
Further, when the gate insulating film is formed, the surface of the oxide semiconductor is exposed to a plasma atmosphere at the same time as a thermal process. Since the plasma contains high-energy particles, damage is induced on the surface of the oxide semiconductor. Further, in the case where the plasma is a reducing atmosphere such as hydrogen or a hydroxyl group, the surface of the oxide semiconductor is reduced, causing oxygen vacancies, resulting in defects, and further reducing the film quality.
These defects form an electrically shallow impurity level and cause a reduction in resistance of the oxide semiconductor thin film layer. Therefore, when zinc oxide is used for the active layer of a top gate type thin film transistor, it becomes a normally-on type, that is, a depletion type operation in which a drain current flows without applying a gate voltage. The voltage decreases and the leakage current increases.
Further, the defect becomes a trap of carriers in zinc oxide serving as an active layer, and causes a decrease in electron mobility of the thin film transistor.
Furthermore, when the gate insulating film is formed in a low temperature region such as 200 ° C. or less by a plasma chemical vapor deposition method using an organic metal or the like as a source gas, carbon is taken into the film. Carbon becomes a factor that degrades the quality of the gate insulating film, and causes problems such as an increase in leakage current and deterioration in reliability.

  On the other hand, in the case of a bottom gate type thin film transistor, when a protective insulating film is formed on the oxide semiconductor thin film layer, the oxide semiconductor thin film layer and the protective insulating film itself have defects for the same reason as the top gate type thin film transistor. Occurs and the film quality decreases. Further, the film quality of the protective insulating film also deteriorates when carbon is contained in the protective insulating film. This deteriorates the interface characteristics between the oxide semiconductor thin film layer and the first protective insulating film. The interface is the opposite surface of the channel and corresponds to the back channel. However, the deterioration of the interface characteristics of the back channel also causes a problem of increased leakage current.

JP 2003-298062 A

The present invention has been made in view of the above problems, and suppresses an increase in defects due to desorption and reduction of constituent elements on the surface of the oxide semiconductor thin film in a stacked structure in which an insulating film is formed on the oxide semiconductor thin film layer. To do. Accordingly, it is an object of the present invention to provide a method for manufacturing a thin film transistor that can suppress adverse effects such as an increase in leakage current.
In addition, the interface characteristics between the oxide semiconductor thin film layer and the gate insulating film are improved. Accordingly, another object of the present invention is to provide a method for manufacturing a thin film transistor with excellent leakage and further reduced leakage current.

The invention according to claim 1 is an oxide semiconductor thin film layer in which source and drain electrodes are formed on a substrate, each part of the source and drain electrodes is covered and zinc oxide is a main component, and the oxide semiconductor The first insulating film covering only the upper surface of the thin film layer is patterned to oxidize the first insulating film and oxidize each part of the source and drain electrodes covered by the oxide semiconductor thin film layer Without oxidizing, the upper surface of the oxide semiconductor thin film layer in contact with the first insulating film is oxidized through the oxidized first insulating film, and a second insulating film is formed on the first insulating film. The present invention relates to a method for manufacturing a thin film transistor characterized by forming a film.

The invention according to claim 2 relates to the preparation of thin film transistor according to claim 1, wherein said first insulating film is characterized in that it contains carbon.

The invention according to claim 3 relates to the preparation of thin film transistor according to claim 1, wherein said first insulating film is made of a compound containing a constituent element of oxygen.

The invention according to claim 4 relates to the method of manufacturing a thin film transistor according to claim 1 or 2 , wherein the first insulating film is made of a compound not containing oxygen as a constituent element.

Invention, the oxide of the first insulating film, according to any one of claims 1 to 4, characterized in that by exposing the first insulating film to a plasma containing at least oxygen as a constituent element according to claim 5 The present invention relates to a method for manufacturing a thin film transistor.

Invention, the oxide formation with the formation of the first insulating film of the semiconductor thin film layer, method of claims 1 to 5 thin film transistor according any one and performing in succession in a vacuum according to claim 6 About.

According to the first aspect of the invention, the oxide semiconductor thin film layer covered with the first insulating film together with the first insulating film is obtained by oxidizing the first insulating film before forming the second insulating film. Can be oxidized. Therefore, in the top gate type thin film transistor, defects in the oxide semiconductor thin film layer caused by the heat treatment accompanying the formation of the first insulating film are reduced, and the resistance of the oxide semiconductor thin film layer is reduced and the decrease in conductivity is suppressed. can do. Therefore, a thin film transistor having a high electron mobility with a low threshold voltage and suppressed leakage current is obtained.
In addition, since the defects in the oxide semiconductor thin film layer are reduced, the film quality of the oxide semiconductor thin film layer is also improved. In addition, since the defect level in the first insulating film is reduced by oxidizing the first insulating film, the film quality of the first insulating film is also improved. Therefore, the interface characteristics with the oxide semiconductor thin film layer are improved, and a thin film transistor in which leakage current is further suppressed is obtained.
In addition, even in a bottom-gate thin film transistor, the interface characteristics with the first insulating film accompanying the reduction in defects occur on the back channel side of the oxide semiconductor thin film layer, and the effect of suppressing leakage current can be sufficiently achieved. it can.

  According to the invention of claim 2, the oxide semiconductor thin film is formed by patterning the first insulating film so as to cover only the upper surface of the oxide semiconductor thin film layer, and then oxidizing the first insulating film. The layer sides can be oxidized. Therefore, defects in the oxide semiconductor thin film layer can be further reduced, and leakage current can be further suppressed.

  According to the invention of claim 3, when the first insulating film contains carbon, carbon and oxygen are bonded by oxidizing the first insulating film. Accordingly, carbon is desorbed from the first insulating film together with oxygen, and a good first insulating film with a low carbon content can be formed. Therefore, the film quality of the first insulating film can be improved, and the interface between the first insulating film and the oxide semiconductor thin film layer becomes good.

  According to the invention of claim 4, when the first insulating film is made of a compound containing oxygen as a constituent element, defects such as oxygen vacancies existing in the first insulating film are compensated for by oxidation treatment, whereby the defect level is reduced. Decrease. Therefore, the film quality of the first insulating film is improved and the interface with the oxide semiconductor thin film layer is improved.

  According to the fifth aspect of the invention, when the first insulating film is made of a compound that does not contain oxygen as a constituent element, defects such as dangling bonds existing in the first insulating film are compensated with oxygen by oxidation treatment, and the defect The level decreases. Therefore, the film quality of the first insulating film is improved and the interface with the oxide semiconductor thin film layer is improved.

  According to the invention of claim 6, the first gate insulating film and the first gate insulating film are extensively exposed by exposing the first gate insulating film to plasma containing at least oxygen as a constituent element. The oxide semiconductor thin film layer coated on the surface can be oxidized.

  According to the seventh aspect of the present invention, the formation of the oxide semiconductor thin film layer and the formation of the first insulating film are continuously performed in a vacuum, whereby the interface characteristics between the oxide semiconductor thin film layer and the first insulating film are further increased. The leakage current can be further suppressed.

A thin film transistor according to a first embodiment of the present invention will be described below with reference to FIG.
The thin film transistor according to the present invention is not limited by the structure of the embodiment.

  A thin film transistor 100 according to a first embodiment of the present invention includes a substrate 1, a pair of source / drain electrodes 2, an oxide semiconductor thin film layer 3, a first gate insulating film 4, a contact portion 5a, a second gate insulating film 6, and a pair. Source / drain external electrode 2a, gate electrode 7, and display electrode 8, each of which is laminated as shown in FIG.

As shown in FIG. 1, the thin film transistor 100 is formed on a substrate 1 made of glass (non-alkali glass mainly composed of SiO 2 and Al 2 O 3 ).
The material of the substrate 1 is not limited to glass, and any material can be used as long as it is an insulator such as a plastic or metal foil coated with an insulator.

A pair of source / drain electrodes 2 are stacked on the substrate 1. The pair of source / drain electrodes 2 are disposed on the upper surface of the substrate 1 with a gap.
The source / drain electrode 2 is formed of, for example, a conductive oxide such as indium tin oxide (ITO) or n + ZnO, a metal, or a metal at least partially covered with the conductive oxide.

The oxide semiconductor thin film layer 3 is stacked on the substrate 1 and the source / drain electrodes 2.
The oxide semiconductor thin film layer 3 is disposed so as to form a channel between the pair of source / drain electrodes 2, and is formed of an oxide semiconductor containing zinc oxide as a main component. Here, the oxide semiconductor containing zinc oxide as a main component is doped with intrinsic zinc oxide, p-type dopants such as Li, Na, N, and C and n-type dopants such as B, Al, Ga, and In. Zinc oxide and zinc oxide doped with Mg, Be, In, Sn or the like.
In the oxide semiconductor thin film layer 3, the thickness of the portion formed on each source / drain electrode 2 is shown to be thinner than the portion formed between the pair of source / drain electrodes 2. This is merely for the convenience of illustration, and in reality, the thicknesses of both are substantially the same.

  The first gate insulating film 4 is formed so as to cover only the upper surface of the oxide semiconductor thin film layer 3. The first gate insulating film 4 is provided as a part of the gate insulating film, and also serves as a protective film for protecting the oxide semiconductor thin film layer 3 from a resist stripping solution in the manufacturing process.

  The first gate insulating film 4 is oxidized before the second gate insulating film 6 is formed. Thereby, not only the first gate insulating film 4 but also the oxide semiconductor thin film layer 3 can be oxidized. By oxidizing the oxide semiconductor thin film layer 3, defects in the oxide semiconductor thin film layer can be reduced, and a reduction in resistance of the oxide semiconductor thin film layer can be suppressed. Therefore, a thin film transistor in which leakage current is suppressed is obtained. In addition, when the number of defects is reduced, the carrier concentration is increased and a thin film transistor with high mobility is obtained.

Further, when the first gate insulating film 4 is made of a compound containing oxygen, the first gate insulating film 4 has defects such as oxygen vacancies. At this time, by oxidizing the first gate insulating film 4, defects in the first gate insulating film are compensated by oxygen, and the defect level is reduced. Thereby, the film quality is improved. Examples of the compound containing oxygen include silicon oxide, silicon oxynitride, aluminum oxide, magnesium oxide, yttrium oxide, and hafnium oxide.
Further, when the first gate insulating film 4 is composed of a compound not containing oxygen, the first gate insulating film 4 has defects such as dangling bonds. Although the defect is not an oxygen vacancy, by oxidizing the first gate insulating film 4, the defect is compensated with oxygen, and the defect level is reduced. Thereby, the film quality is improved. Examples of the compound not containing oxygen include silicon nitride.

  Further, for example, when the first gate insulating film is formed at a low temperature range of 200 ° C. or lower by plasma chemical vapor deposition using an organic material, the organic material is not sufficiently separated. Therefore, carbon as an impurity is taken into the first gate insulating film 4 and the film quality of the first gate insulating film is deteriorated. However, when the first gate insulating film 4 is oxidized, carbon and oxygen are combined and desorbed from the gate insulating film. As a result, an insulating film with a small amount of carbon as an impurity is formed, and a high-quality gate insulating film is obtained.

As described above, the film quality of the gate insulating film 4 is improved, and in addition, the film quality of the oxide semiconductor thin film layer 3 is also improved by reducing defects. Therefore, the interface characteristics between the oxide semiconductor thin film layer 3 and the first gate insulating film 4 are improved, and a highly reliable thin film transistor in which leakage current is suppressed is obtained.
The thickness of the first gate insulating film 4 needs to be thin enough to oxidize to the upper surface of the oxide semiconductor thin film layer 3 by oxidation treatment. This is because if the oxide semiconductor thin film layer surface is not oxidized, defects on the oxide semiconductor thin film layer surface are not reduced, and the effect of the present invention is halved. Although the specific film thickness depends on the oxidation treatment method, it is preferably about 100 mm when the oxidation treatment is performed by exposure with plasma containing oxygen as a constituent element.

The second gate insulating film 6 is laminated so as to cover the pair of source / drain electrodes 2, the side surfaces of the oxide semiconductor thin film layer 3, and the entire surface of the first gate insulating film 4. Thus, by laminating the second gate insulating film 6, the surface of the oxide semiconductor thin film layer 3 can be completely covered with the first gate insulating film 4 and the side surface can be completely covered with the second gate insulating film 6. it can.
The thickness of the second gate insulating film 6 is formed, for example, to 200 to 400 nm, and preferably about 300 nm.

The second gate insulating film 6 is formed using a silicon oxide (SiOx) film, a silicon oxynitride (SiON) film, a silicon nitride (SiNx) film, or silicon nitride (SiNx) using oxygen or a compound containing oxygen as a constituent element. It is formed by a doped film. As the second gate insulating film 6, a compound having a dielectric constant larger than that of a silicon oxide compound (SiOx) or silicon oxynitride (SiON) and containing oxygen or oxygen as a constituent element in SiNx, such as N 2 O, is used. A film doped with oxygen is preferably used. This is because the thin film transistor has a high dielectric constant and is excellent from the viewpoint of protecting the oxide semiconductor thin film layer.
The first gate insulating film 4 and the second gate insulating film 6 are formed by plasma chemical vapor deposition (PCVD), for example.

  The pair of source / drain external electrodes 2a are connected to the corresponding source / drain electrodes 2 via contact portions 5a.

The gate electrode 7 is formed on the second gate insulating film 6. The gate electrode 7 serves to control the electron density in the oxide semiconductor thin film layer 3 by a gate voltage applied to the thin film transistor.
The gate electrode 7 is made of a metal film exemplified by Cr and Ti.

  The display electrode 8 is formed in order to apply a voltage to the liquid crystal used for the liquid crystal display via a thin film transistor. Since this electrode requires high transmittance for visible light, an oxide conductive thin film using indium tin oxide (ITO) or the like is formed. Although omitted in FIG. 1, the display electrode 8 extends on the second gate insulating film 6 in the direction opposite to the gate electrode 7.

  A method of manufacturing a thin film transistor (TFT) according to the first embodiment of the present invention will be described below with reference to FIGS. However, FIGS. 2 and 3 are divided into two drawings due to space, but show a continuous process.

  First, as shown in FIG. 2A, after a metal thin film such as Ti or Cr is formed to a thickness of, for example, 100 nm on the entire surface of the substrate 1 by a magnetron sputtering method or the like, the photolithography method is applied to the thin film. A pair of source / drain electrodes 2 is formed.

  As shown in FIG. 2B, a semiconductor thin film containing zinc oxide as a main component, preferably intrinsic zinc oxide, is used as the oxide semiconductor thin film layer 3 on the entire surface of the substrate 1 and the pair of source / drain electrodes 2, for example, 50 It is formed with a film thickness of about 100 nm.

  As shown in FIG. 2 (3), the first gate insulating film 4 is formed on the oxide semiconductor thin film layer 3. At this time, it is preferable to continuously form the oxide semiconductor thin film layer 3 and the first gate insulating film 4 in a vacuum. This is because the interface characteristics between the oxide semiconductor thin film layer 3 and the first gate insulating film 4 can be maintained well.

As shown in FIG. 2 (4), a photoresist is coated on the first gate insulating film 4 to form a patterned photoresist 4a. Using the photoresist 4a as a mask, the first gate insulating film 4 is formed. Is dry-etched using a gas such as SF 6 and then wet etching is performed on the oxide semiconductor thin film layer 3 with a 0.2% HNO 3 solution.

The subsequent steps will be described with reference to FIG.
FIG. 3A is a cross-sectional view in which the photoresist 4a is removed after wet etching of the oxide semiconductor thin film layer 3, and the TFT active layer having the first gate insulating film 4 having the same shape as the oxide semiconductor thin film layer 3 is shown. A region is formed. In addition to forming an interface with the oxide semiconductor thin film layer 3, the first gate insulating film 4 also plays a role of protecting the oxide semiconductor thin film layer when patterning the active region. That is, if the resist stripping solution used for stripping the photoresist 4a after patterning the active layer contacts the surface of the oxide semiconductor thin film layer 3, the surface of the thin film and the crystal grain boundary are roughened by etching, but the first gate insulation The presence of the film 4 on the surface of the oxide semiconductor thin film layer 3 serves as a protective insulating film against various chemicals such as a resist stripping solution in a photolithography process, and can prevent surface roughness of the oxide semiconductor thin film layer 3. .

After the oxide semiconductor thin film layer 3 and the first gate insulating film 4 are formed, the first gate insulating film 4 is oxidized. The oxidation is preferably performed by exposing the first gate insulating film 4 to plasma containing oxygen as a constituent element. This is because the first gate insulating film 4 and the oxide semiconductor thin film layer 3 coated on the first gate insulating film 4 can be oxidized over a wide range. The plasma can be generated using an oxidizing gas such as oxygen (O 2 ) or nitrous oxide (N 2 O).
When the first gate insulating film 4 is formed, a thermal process is involved. Since zinc oxide, which is a main component of the oxide semiconductor thin film layer, does not have sufficient heat resistance, the heat treatment causes desorption of zinc and oxygen as constituent elements from the vicinity of the oxide semiconductor thin film layer surface (channel portion). Therefore, defects occur in the oxide semiconductor thin film layer 3 and the film quality is deteriorated.
Further, when the first gate insulating film 4 is formed, the surface of the oxide semiconductor is exposed to a plasma atmosphere at the same time as a thermal process. In the case where the plasma is a reducing atmosphere such as hydrogen or a hydroxyl group, the oxide semiconductor surface is reduced, which causes oxygen deficiency, resulting in defects, and film quality is degraded. The oxidation treatment is performed in order to reduce the influence of defects due to the formation of the gate insulating film 4. Hereinafter, the effect of the oxidation treatment will be described in detail.
As described above, with the formation of the gate insulating film 4, zinc and oxygen in the oxide semiconductor thin film layer are desorbed and defects are formed. The defect forms an electrically shallow impurity level, which causes a reduction in resistance of the oxide semiconductor thin film layer. Therefore, the thin film transistor is normally on, that is, a depletion type operation. As the defect increases, the threshold voltage decreases and the leakage current increases.
In addition, the defect becomes a trap of carriers in zinc oxide serving as an active layer, which causes a decrease in electron mobility of the thin film transistor.
Therefore, after the first gate insulating film 4 is formed, the oxide semiconductor thin film layer 3 is oxidized together with the first gate insulating film, so that oxygen compensates for defects and reduces the defects. be able to. Accordingly, a thin film transistor with high mobility in which leakage current is suppressed is obtained.
In addition, since the defects in the oxide semiconductor thin film layer are reduced, the film quality of the oxide semiconductor thin film layer is also improved.

In addition, defects such as oxygen vacancies and dangling bonds also exist in the first gate insulating film 4 itself, but the defect level in the first gate insulating film is reduced by performing the oxidation treatment. Thereby, the film quality of the first gate insulating film is also improved, and the interface characteristics between the first gate insulating film 4 and the oxide semiconductor thin film layer 3 are improved. Hereinafter, the process of decreasing the defect level will be described separately for the case where the compound constituting the gate insulating film contains oxygen and the case where it does not contain oxygen.
When the first gate insulating film 4 is composed of a compound containing oxygen, the first gate insulating film 4 has defects such as oxygen vacancies. At this time, by oxidizing the first gate insulating film 4, oxygen is replenished and the defect level is reduced.
Further, when the first gate insulating film 4 is composed of a compound not containing oxygen, defects such as dangling bonds exist. Although the defect is not an oxygen deficiency, by oxidizing the first gate insulating film 4, oxygen compensates the defect and the defect level decreases.

Further, when the first gate insulating film 4 contains carbon, carbon becomes an impurity, and the film quality of the first gate insulating film is deteriorated. However, when the first gate insulating film 4 is oxidized, carbon and oxygen are combined and desorbed from the gate insulating film. Thereby, carbon as an impurity is reduced, and a high-quality gate insulating film is obtained. As a result, a thin film transistor having excellent reliability in which leakage current is further suppressed is obtained.
In the case where carbon is contained in the first gate insulating film 4, for example, the gate insulating film 4 is formed in a low temperature region of 200 ° C. or less by plasma chemical vapor deposition using an organic metal such as organic silicon or organic aluminum as a raw material. The case where it forms into a film is considered. Organic metals are not sufficiently dissociated at low temperatures and contain carbon in the film. Organic silicon includes tetraethoxysilane (TEOS), tetramethylsilane (TMS), dimethyldimethoxysilane (DMDMOS), tetramethoxysilane (TMOS), tetraethylsilane (TES), octmethylcyclotetrasiloxane (OMCTS), tetrapropoxy Examples include silane (TPOS), tetramethylcyclotetrasiloxane (TMCTS), and hexamethyldisilazane (HMDS). Examples of the organic aluminum include tetramethylaluminum (TMA) and tetraethylaluminum (TEA).
Note that the oxidation treatment may be performed before the pattern formation of the oxide semiconductor thin film layer and the first gate insulating film, but the side surface of the oxide semiconductor thin film layer can also be oxidized by performing the oxidation treatment after the pattern formation. Accordingly, defects near the side surface of the oxide semiconductor thin film layer can be further suppressed, and leakage current can be further suppressed.

  After the oxidation treatment of the first gate insulating film 4, as shown in FIG. 3B, the second gate insulation is formed on the entire surface of the substrate 1, the source / drain electrodes 2, the oxide semiconductor thin film layer 3, and the first gate insulating film 4. A film 6 is formed, and then a contact hole 5 is opened on the pair of source / drain electrodes 2 by photolithography. In this case, it is desirable to form the second gate insulating film 6 by using a plasma enhanced chemical vapor deposition (PCVD) method under the same conditions as the first gate insulating film 4 (interface control type insulating film).

  Finally, as shown in FIG. 3 (3), a gate electrode 7 made of a metal film such as Cr or Ti is formed on the second gate insulating film 6, and a pair of source / drain external electrodes 2 a made of the same material as the gate electrode 7. Are connected to the corresponding source / drain electrodes 2 via the contact portions 5a. Thereafter, a display electrode 8 made of indium tin oxide (ITO) or the like is formed to complete the TFT array.

  Next, the structure of the thin film transistor according to the second embodiment of the present invention will be described with reference to FIG. The structure of the second embodiment is similar to the structure of a bottom gate type amorphous silicon TFT currently commercialized as a driving element for a liquid crystal display, and the process for manufacturing the amorphous silicon TFT can be applied. This is effective in reducing investment and commercializing zinc oxide TFTs.

  FIG. 4 is a sectional view showing the structure of the thin film transistor 101 according to the second embodiment of the present invention. The thin film transistor 101 includes a substrate 9, a gate electrode 10, a gate insulating film 11, an oxide semiconductor thin film layer 12, a first protective insulating film 13, a second protective insulating film 14, a pair of source / drain electrodes 15, and an overcoat insulating film 16. As shown in FIG. 4, each of the above components is stacked.

The thin film transistor 101 is formed on the substrate 9 as shown in FIG.
A gate electrode 10 is formed on the substrate 9.

The gate insulating film 11 is laminated on the entire surface of the substrate 9 so as to cover the gate electrode 10.
The oxide semiconductor thin film layer 12 is formed so as to cover a part of the gate insulating film 11 across the gate electrode 10. The oxide semiconductor thin film layer 12 is formed of an oxide semiconductor containing zinc oxide as a main component.

  The first protective insulating film 13 is laminated so as to cover the upper surface of the oxide semiconductor thin film layer 12. The first protective insulating film 13 is provided to protect the oxide semiconductor thin film layer 12 made of zinc oxide from damage and reductive desorption, but protects the oxide semiconductor thin film layer 12 from the resist stripping solution in the manufacturing process. It also plays a role as an insulating film.

The first protective insulating film 13 is oxidized before the second protective insulating film 14 is formed. Thereby, not only the first protective insulating film 13 but also the oxide semiconductor thin film layer 12 can be oxidized. Oxidation of the oxide semiconductor thin film layer 12 and the first protective insulating film 13 reduces defects and improves film quality. Thereby, the characteristics of the interface (portion corresponding to the back channel) between the oxide semiconductor thin film layer 12 and the first protective insulating film 13 are improved, and a thin film transistor in which leakage current is suppressed is obtained. Further, for example, when the first protective insulating film 13 is formed in a low temperature range of 200 ° C. or less by plasma chemical vapor deposition using an organic material, the first protective insulating film 13 contains carbon. However, when the first protective insulating film 13 is oxidized, carbon is combined with oxygen and desorbed. Thereby, the film thickness of the first protective insulating film is further improved, and the leakage current is further suppressed.
The thickness of the first protective insulating film 13 needs to be thin enough to oxidize to the upper surface of the oxide semiconductor thin film layer 12 by oxidation treatment. This is because if the oxide semiconductor thin film layer surface is not oxidized, defects on the oxide semiconductor thin film layer surface are not reduced, and the effect of the present invention is halved. Although the specific film thickness depends on the method of oxidation treatment, it is preferably about 100 mm when the oxidation treatment is performed by exposure with plasma containing oxygen as a constituent element.

The second protective insulating film 14 is laminated so as to cover the entire surface of the first protective insulating film 13 and the side surfaces of the oxide semiconductor thin film layer 12.
By providing the second protective insulating film 14, the side surface of the oxide semiconductor thin film layer 12 that is not covered by the first protective insulating film 13 can be reliably covered.

  The pair of source / drain electrodes 15 are formed at a distance from each other so as to be in contact with the oxide semiconductor thin film layer 12 through contact holes opened in the first protective insulating film 13 and the second protective insulating film 14.

The overcoat insulating film 16 is provided for the purpose of protecting the device of the thin film transistor 101, and is laminated so as to cover the entire surface of the thin film transistor.
By providing the overcoat insulating film 16, the entire device of the thin film transistor 101 can be more reliably protected.

  Next, the manufacturing method of the bottom gate type TFT according to the second embodiment of the present invention will be described below with reference to FIG.

  As shown in FIG. 5A, a gate electrode 10 is formed on the entire surface of the substrate 9 by a magnetron sputtering method or the like, and by photolithography.

As shown in FIG. 4B, a gate insulating film 11 is formed on the entire surface of the substrate 9 so as to cover the gate electrode 10.
The method for forming the gate insulating film 11 is not particularly limited, but it is preferable to use a plasma enhanced chemical vapor deposition (PCVD) method capable of forming a film over a large area substrate.
After the gate insulating film 11 is formed, the substrate surface is preferably cleaned with plasma using an oxidizing gas such as oxygen (O 2 ) or nitrous oxide (N 2 O). In particular, when oxygen is used as the oxidizing gas, the amount of oxygen radicals generated is increased by using a plasma in which a rare gas such as Ar, Xe, He, or Kr is added to oxygen, and the surface of the oxide semiconductor thin film layer is increased. The cleaning efficiency for the adsorbed organic component and moisture is increased, and at the same time, metal impurities on the surface of the oxide semiconductor thin film layer can be removed by the sputtering effect of the additive gas, which is more preferable.

  After the formation of the gate insulating film 11, as shown in FIG. 5C, the oxide semiconductor thin film layer 12 is formed on the entire surface of the gate insulating film 11 with a film thickness of, for example, about 50 to 100 nm. As the oxide semiconductor thin film layer 12, a semiconductor thin film containing zinc oxide as a main component, preferably intrinsic zinc oxide is used.

  After the oxide semiconductor thin film layer 12 is formed, a first protective insulating film 13 that covers the entire surface of the oxide semiconductor thin film layer 12 is formed as shown in FIG. At this time, it is preferable to continuously form the gate insulating film 11, the oxide semiconductor thin film layer 12, and the first protective insulating film 13 in a vacuum. This is because the interface of each layer can be maintained well.

  After the formation of the first protective insulating film 13, the oxide semiconductor thin film layer 12 and the first protective insulating film 13 are processed into a channel shape. The shape processing is performed so that the oxide semiconductor thin film layer 12 and the first protective insulating film 13 cover a part of the gate insulating film including the upper portion of the gate electrode 10. By this shape processing, a structure in which the oxide semiconductor thin film layer 12 is completely covered with the second protective insulating film 14 can be realized while maintaining the function of the oxide semiconductor thin film layer 12 as the channel layer.

  Specifically, a photoresist is coated on the upper surface of the first protective insulating film 13, the first protective insulating film 13 is etched using the patterned photoresist as a mask, and then the patterned first protective insulating film 13 is used. The oxide semiconductor thin film layer 12 is wet-etched using as a mask.

After the oxide semiconductor thin film layer 12 and the first protective insulating film 13 are formed, the first protective insulating film 13 is oxidized. The oxidation is preferably performed by exposing the first protective insulating film 13 to plasma containing oxygen as a constituent element. This is because the first protective insulating film 13 and the oxide semiconductor thin film layer 12 coated on the first protective insulating film 13 can be oxidized over a wide range.
By oxidizing the first protective insulating film 13, the oxide semiconductor thin film layer 12 is also oxidized. Thereby, defects in the oxide semiconductor thin film layer 12 and the first protective insulating film 13 are reduced, and the film quality is improved. Therefore, interface characteristics with the oxide semiconductor thin film layer are improved. Although the interface corresponds to a back channel, the back channel characteristics are improved, so that a thin film transistor in which leakage current is suppressed is obtained.
In addition, for example, when the first protective insulating film is formed at a low temperature range of 200 ° C. or less by plasma chemical vapor deposition using an organic material, carbon is contained in the first protective insulating film 13, Although the film quality is deteriorated, carbon is bonded to oxygen and desorbed by the oxidation treatment. Thereby, the film quality of the first protective insulating film 13 is improved, and the leakage current is further suppressed by improving the interface characteristics with the oxide semiconductor thin film layer 12. As a case where carbon is contained in the first protective insulating film, a case where an organic metal is used as a raw material gas is cited.
The oxidation treatment may be performed before the pattern formation of the oxide semiconductor thin film layer 12 and the first protective insulating film 13, but the side surface of the oxide semiconductor thin film layer 12 can also be oxidized by performing the oxidation treatment after the pattern formation. . Thereby, defects near the side surface of the oxide semiconductor thin film layer 12 can be further suppressed, and leakage current can be further suppressed.

  After the oxidation treatment of the first protective insulating film 13, as shown in FIG. 5 (5), the second protective insulating film is formed so as to cover the entire surface of the first protective insulating film 13, the oxide semiconductor thin film layer 12, and the gate insulating film 11. A film 14 is formed.

After the formation of the second protective insulating film 14, as shown in FIG. 5 (6), two contact holes are formed at intervals as contact portions between the source / drain electrodes 15 and the oxide semiconductor thin film layer 12 described later. To do.
The contact hole is formed by photolithography and etching up to a portion that reaches the surface of the oxide semiconductor thin film layer 12 through the first protective insulating film 13 and the second protective insulating film 14.

After the contact holes are formed, a pair of source / drain electrodes 15 are formed.
The pair of source / drain electrodes 15 are formed with a space between the contact hole portions.

  Finally, the overcoat insulating film 16 is formed on the thin film transistor, thereby completing the TFT of the second embodiment.

  The thin film transistor obtained by the production method according to the present invention has excellent performance and can be suitably used as a driving element for a liquid crystal display device or the like.

It is sectional drawing which shows the form of the 1st Example of the thin-film transistor (TFT) obtained by the manufacturing method which concerns on this invention. BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows one form of 1st Example of the manufacturing method of the thin-film transistor (TFT) based on this invention with time, (1) Sectional drawing of the structure which shape | molded the source / drain electrode on the board | substrate (2) Oxide Cross-sectional view of a structure coated with a semiconductor thin film layer (3) Cross-sectional view of a structure covered with a first gate insulating film (4) Cross-sectional view of a structure formed with a photoresist. It is sectional drawing which shows one form of the continuation of FIG. 2 of the 1st Example of the manufacturing method of the thin-film transistor (TFT) based on this invention with time, (1) The oxide semiconductor thin film layer and the 1st gate insulating film were patterned Cross-sectional view of structure (2) Cross-sectional view of structure in which second gate insulating film and contact hole are formed (3) Cross-sectional view of structure in which gate electrode, contact portion, source / drain external electrode and display electrode are formed. It is sectional drawing which shows the form of the thin-film transistor (TFT) based on the 2nd Example of this invention. It is sectional drawing which shows one form of the manufacturing method of the thin-film transistor (TFT) based on 2nd Example of this invention over time, (1) Sectional drawing of the structure in which the gate electrode was formed on the board | substrate (2) Gate insulating film Cross-sectional view of structure coated (3) Cross-sectional view of structure coated with oxide semiconductor thin film layer (4) Cross-sectional view of structure coated with first protective insulating film (5) Oxide semiconductor thin film layer and first protective insulating film FIG. 6 is a cross-sectional view of the structure in which the second protective insulating film is formed after the shape processing is performed. (6) The cross-sectional view of the structure in which the source / drain electrodes and the overcoat insulating film are formed.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 9 Substrate 3, 12 Oxide semiconductor thin film layer 4 First gate insulating film 6 Second gate insulating film 13 First protective insulating film 14 Second protective insulating film 100 Top gate type thin film transistor 101 Bottom gate type thin film transistor

Claims (6)

  1. Source and drain electrodes are formed on the substrate,
    Patterning an oxide semiconductor thin film layer mainly covering zinc oxide and covering each part of the source and drain electrodes, and a first insulating film covering only the upper surface of the oxide semiconductor thin film layer;
    The first insulating film is oxidized, and the first and second electrodes covered with the oxide semiconductor thin film layer are oxidized without passing through the oxidized first insulating film. Oxidizing the upper surface of the oxide semiconductor thin film layer in contact with one insulating film;
    A method of manufacturing a thin film transistor, wherein a second insulating film is formed on the first insulating film .
  2. Preparation of the thin film transistor of claim 1 wherein said first insulating film is characterized in that it contains carbon.
  3. 3. The method for manufacturing a thin film transistor according to claim 1, wherein the first insulating film is made of a compound containing oxygen as a constituent element.
  4. 3. The method of manufacturing a thin film transistor according to claim 1, wherein the first insulating film is made of a compound not containing oxygen as a constituent element.
  5. The oxidation of the first insulating film, according to claim 1 to 4 thin film transistor process according any one and performing by exposing the first insulating film to a plasma containing at least oxygen as a constituent element.
  6. The oxide formation of forming said first insulating film of the semiconductor thin film layer, claims 1 to 5 or the thin film transistor of the procedure described is characterized in that continuously performed in vacuum.
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