JP2015092295A - 液晶表示装置アレイ基板及びその製造方法 - Google Patents
液晶表示装置アレイ基板及びその製造方法 Download PDFInfo
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- 239000011651 chromium Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
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- 230000001678 irradiating effect Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000001182 laser chemical vapour deposition Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
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- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
本発明は液晶表示装置に関し、さらに詳しくはデータラインのオープン不良をリペアすることができる液晶表示装置アレイ基板及びその製造方法に関する。
Claims (8)
- 基板上に一方向に配列されたゲートラインと、
前記ゲートラインと交差し、複数の画素領域を定義するデータラインと、
前記ゲートラインと前記データラインの交差部に形成された薄膜トランジスタと、
前記薄膜トランジスタに接続された画素電極と、
前記画素電極と対向し、電界を形成する共通電極と、
前記データラインと重畳するシールドパターンであって、当該シールドパターンは前記データラインと接続し、
前記シールドパターンは島パターンを有し、前記データラインのオープンされた部分に位置付けられ、
前記データラインのオープンされた部分の一端と、当該データラインのオープンされた部分の他の一端は、前記シールドパターンにより、それぞれ互いに電気的に接続される液晶表示装置アレイ基板。 - 前記シールドパターンはパッシベーション膜上に位置し、当該パッシベーション膜は前記データライン上に位置する請求項1記載の液晶表示装置アレイ基板。
- 前記シールドパターンは、前記データラインと、前記パッシベーション膜を貫通する少なくとも2つのコンタクトホールを介して接続され、
前記シールドパターンは、前記少なくとも2つのコンタクトホールに満たされたコンタクトパターンを介して、前記データラインと接続される請求項2に記載の液晶表示装置アレイ基板。 - 前記シールドパターンの幅は、前記データラインの幅より広い請求項1に記載の液晶表示装置アレイ基板。
- 液晶表示装置アレイ基板であって、
基板上に一方向に配列されたゲートラインと、
前記ゲートラインと交差し複数の画素領域を定義するデータラインと、
前記ゲートラインと前記データラインの交差部に形成された薄膜トランジスタと、
前記薄膜トランジスタに接続された画素電極と、
前記画素電極と対向し、電界を形成する共通電極であって、当該共通電極は、前記データラインと重畳されるシールドラインを含み、前記シールドラインは、当該シールドラインの他の部分より幅が狭いカッティング部を少なくとも二つ以上含み、さらに
カラーフィルタアレイ基板の前記カッティング部に隣接する領域に形成されるブラックマトリックスと、からなり、当該ブラックマトリックスは、前記データライン、薄膜トランジスタ、ゲートラインを含む信号線及び素子領域を覆い、前記画素電極をオープンする形状からなり、さらに前記カッティング部に隣接する領域に突出して形成され、
少なくとも2つの前記カッティング部の幅は、前記データラインの幅の約10%から99%であり、
シールドパターンを含む前記シールドラインは島パターンを有し、前記データラインのオープンされた部分に位置し、
前記データラインの前記オープンされた部分の一端と、前記データラインの前記オープンされた部分の他の一端は、前記シールドパターンにより、それぞれ互いに電気的に接続される液晶表示装置アレイ基板。 - 前記シールドパターンは、パッシベーション膜上に位置し、当該パッシベーション膜は前記データライン上に位置する請求項5に記載の液晶表示装置アレイ基板。
- 前記シールドパターンは、前記パッシベーション膜を貫通する少なくとも2つのコンタクトホールを介して、前記データラインに接続され、
前記シールドパターンは、前記少なくとも2つのコンタクトホールに満たされたコンタクトパターンを介して、前記データラインと接続する請求項6に記載の液晶表示装置アレイ基板。 - 前記シールドパターンの幅は、前記データラインの幅より広い請求項5に記載の液晶表示装置アレイ基板。
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KR10-2012-0023989 | 2012-03-08 | ||
KR1020120023989A KR101303476B1 (ko) | 2012-03-08 | 2012-03-08 | 액정표시장치 어레이 기판 및 그 제조방법 |
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WO2021033393A1 (ja) * | 2019-08-22 | 2021-02-25 | 株式会社ジャパンディスプレイ | 液晶表示装置 |
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CN202473922U (zh) * | 2012-03-16 | 2012-10-03 | 京东方科技集团股份有限公司 | 一种tft阵列基板及显示装置 |
KR20140118005A (ko) * | 2013-03-27 | 2014-10-08 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
CN103454798B (zh) * | 2013-08-30 | 2017-01-25 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法、显示装置 |
CN103681692A (zh) * | 2013-11-29 | 2014-03-26 | 北京京东方光电科技有限公司 | 一种阵列基板及其制作方法、显示装置 |
CN103676374B (zh) | 2013-12-06 | 2015-12-30 | 京东方科技集团股份有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
CN103676375A (zh) * | 2013-12-09 | 2014-03-26 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法 |
JP2015121583A (ja) | 2013-12-20 | 2015-07-02 | 株式会社ジャパンディスプレイ | 液晶表示パネル |
CN104916648A (zh) * | 2015-06-11 | 2015-09-16 | 京东方科技集团股份有限公司 | 一种阵列基板、制备方法及显示装置 |
CN104880878B (zh) * | 2015-06-19 | 2019-10-15 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法以及显示装置 |
CN104965370B (zh) * | 2015-07-31 | 2019-02-01 | 重庆京东方光电科技有限公司 | 阵列基板及其制造方法、显示装置 |
KR102597464B1 (ko) * | 2016-06-10 | 2023-11-06 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
KR102596770B1 (ko) * | 2016-12-05 | 2023-11-01 | 삼성디스플레이 주식회사 | 액정 표시 장치 |
KR102340941B1 (ko) * | 2017-09-07 | 2021-12-17 | 엘지디스플레이 주식회사 | 리페어 트랜지스터를 포함하는 유기 발광 표시 장치 |
CN108231850B (zh) * | 2018-01-03 | 2022-08-19 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
KR20200039263A (ko) * | 2018-10-05 | 2020-04-16 | 엘지디스플레이 주식회사 | 표시장치 |
CN111077711A (zh) * | 2019-12-30 | 2020-04-28 | Tcl华星光电技术有限公司 | 一种短路棒结构、阵列基板及显示装置 |
CN113568218A (zh) * | 2021-08-13 | 2021-10-29 | 信利(仁寿)高端显示科技有限公司 | 一种低电容阵列基板制作方法及液晶显示屏 |
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CN115084207A (zh) * | 2022-06-27 | 2022-09-20 | 合肥京东方卓印科技有限公司 | 显示基板及其制备方法、显示装置 |
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CN103309099A (zh) | 2013-09-18 |
US20130234143A1 (en) | 2013-09-12 |
CN103309099B (zh) | 2015-10-14 |
JP2013186466A (ja) | 2013-09-19 |
KR101303476B1 (ko) | 2013-09-05 |
US8653521B2 (en) | 2014-02-18 |
JP6181093B2 (ja) | 2017-08-16 |
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