JP2015073096A5 - - Google Patents

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JP2015073096A5
JP2015073096A5 JP2014193560A JP2014193560A JP2015073096A5 JP 2015073096 A5 JP2015073096 A5 JP 2015073096A5 JP 2014193560 A JP2014193560 A JP 2014193560A JP 2014193560 A JP2014193560 A JP 2014193560A JP 2015073096 A5 JP2015073096 A5 JP 2015073096A5
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pulsed
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semiconductor substrate
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JP2014193560A 2013-09-30 2014-09-24 パルス化された低周波数ｒｆ電力による高選択性かつ低応力のカーボンハードマスク Active JP6527677B2 (ja)

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US201361884832P 2013-09-30 2013-09-30
US61/884,832 2013-09-30
US14/248,046 US9589799B2 (en) 2013-09-30 2014-04-08 High selectivity and low stress carbon hardmask by pulsed low frequency RF power
US14/248,046 2014-04-08

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JP2019005610A Division JP2019096888A (ja) 2013-09-30 2019-01-17 パルス化された低周波数ｒｆ電力による高選択性かつ低応力のカーボンハードマスク

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JP2015073096A JP2015073096A (ja) 2015-04-16
JP2015073096A5 true JP2015073096A5 (enExample) 2017-10-26
JP6527677B2 JP6527677B2 (ja) 2019-06-05

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JP2019005610A Pending JP2019096888A (ja) 2013-09-30 2019-01-17 パルス化された低周波数ｒｆ電力による高選択性かつ低応力のカーボンハードマスク

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US (1) US9589799B2 (enExample)
JP (2) JP6527677B2 (enExample)
KR (2) KR102447424B1 (enExample)
CN (2) CN109023311B (enExample)

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