JP2015059073A - 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 - Google Patents
炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 Download PDFInfo
- Publication number
- JP2015059073A JP2015059073A JP2013195011A JP2013195011A JP2015059073A JP 2015059073 A JP2015059073 A JP 2015059073A JP 2013195011 A JP2013195011 A JP 2013195011A JP 2013195011 A JP2013195011 A JP 2013195011A JP 2015059073 A JP2015059073 A JP 2015059073A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- wafer
- silicon carbide
- crystal wafer
- carbide single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 93
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 81
- 238000000034 method Methods 0.000 title claims abstract description 64
- 238000011156 evaluation Methods 0.000 title claims abstract description 9
- 238000001069 Raman spectroscopy Methods 0.000 claims abstract description 67
- 238000005498 polishing Methods 0.000 claims abstract description 34
- 238000001953 recrystallisation Methods 0.000 claims abstract description 14
- 238000000859 sublimation Methods 0.000 claims abstract description 14
- 230000008022 sublimation Effects 0.000 claims abstract description 14
- 230000014509 gene expression Effects 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 132
- 238000005259 measurement Methods 0.000 description 30
- 229910003460 diamond Inorganic materials 0.000 description 14
- 239000010432 diamond Substances 0.000 description 14
- 238000007517 polishing process Methods 0.000 description 11
- 238000005520 cutting process Methods 0.000 description 10
- 238000012545 processing Methods 0.000 description 9
- 238000003841 Raman measurement Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007717 exclusion Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000009972 noncorrosive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007518 final polishing process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
(1)昇華再結晶法によって製造された炭化珪素単結晶ウェハの、主面内の2点で測定されたラマンシフト値の差分による、炭化珪素単結晶ウェハ内部応力の評価方法。
(2)(1)に記載の評価方法であって、中心で測定されたラマンシフト値(A)と外周部で測定されたラマンシフト値(B)とのラマンシフト差(A−B)を用いる評価方法。
(3)昇華再結晶法によって製造された炭化珪素単結晶ウェハの反りを事前に予測する方法であって、炭化珪素単結晶ウェハを得る際の最終研磨よりも前に測定した、表裏面のいずれか一方の面内の2点のラマンシフト値の差分を用いて、研磨工程完了後のウェハの反りを見積る、炭化珪素単結晶ウェハの反りの予測方法。
(4)昇華再結晶法により得られた炭化珪素単結晶インゴットをスライスした単結晶薄板の表裏面のいずれか一方の面内の2点で測定されたラマンシフト値の差分を用いる、(3)に記載の炭化珪素単結晶ウェハの反りの予測方法。
(5)ラマンシフト値の差分と炭化珪素単結晶ウェハの反りとの関係を予め求めておき、得られた関係式をもとに、ラマンシフト値の差分から炭化珪素単結晶ウェハの反りを予測する、(3)又は(4)に記載の炭化珪素単結晶ウェハの反りの予測方法。
比較的簡便に、かつ短時間で内部応力を測定する手法として、ラマン散乱光のピーク波数の変化、所謂ラマンシフトを用いる方法がある。結晶に内部応力が存在すると原子間距離が変化し、それに伴いラマン散乱光のピーク波数がシフトすることは広く知られた事実である。すなわち、圧縮応力では高波数側にシフトし、引張応力では低波数側にシフトする。
昇華再結晶法によって製造されたSiC単結晶ウェハであって、口径100mmの、<0001>面を主面とするSiC単結晶ウェハ2枚(ウェハ番号11および12)についてラマン指数測定を行い、さらに、X線回折手法を用いて同ウェハの内部応力測定も行った。ウェハは表裏面とも最終的に平均粒径0.5μmのダイヤモンドスラリーでポリッシュされ、鏡面に仕上げられており、研磨後の厚さは約2.3mmである。変形による応力緩和を回避し、精密な測定を行うため、このような厚いウェハを用いた。
表1、および図3で示した通り、ラマン指数には応力の分布や方向の情報は含まれないが、ラマン指数と内部応力とが対応関係を有することから、ラマン指数によりウェハの内部応力の全体的な大きさは評価可能であることが分かる。なお、ラマン測定、XRDともウェハのSi面、C面の両面で行っており、表1、および図3ではSi面のデータを用いている。ラマン指数についてのSi面とC面の差は誤差範囲であり、面方位による傾向は見られなかった。XRDについても、円周方向応力に関しての面方位による差は1%未満であり、有意差ではなかった。
次に、実施例2として、昇華再結晶法により得られた複数のSiC単結晶インゴットより切断された、厚さ500μmの4インチウェハ(単結晶薄板)を16枚用意し、ラマン指数の測定を行った。ラマン測定の位置は実施例1と同様に、中心とエッジから2mmの2点である。なお、SiCのラマン散乱光ピークを測定する際、ラマン分光測定装置の入射レーザービームの焦点深さはウェハ表面から約10μmの深さとなるように調整した。焦点深さがこれより浅いと、スライスによる歪(原子構造の乱れ)により正しいラマンシフトの値を得ることができない。また、焦点深度がこれより深いと、ラマン散乱光がSiCに吸収されてしまうので、十分な信号強度が得られない。
実施例3では、実施例2で得られた反りとラマン指数の関係式を用いてウェハの反りを予想し、その後、実際に研磨を行って反りを実測した。
先ず、昇華再結晶法により得られた複数のSiC単結晶インゴットから切り出された、厚さ0.5mmの切断ウェハ(単結晶薄板)64枚の中から、実施例3用に7枚を無作為に抽出し、上記と同様にしてラマン指数の測定を行った。すなわち、測定個所は実施例1と同様に中心とエッジから2mmの2か所であり、測定面はSi面である。その結果を表3に示す。
Claims (5)
- 昇華再結晶法によって製造された炭化珪素単結晶ウェハの、主面内の2点で測定されたラマンシフト値の差分による、炭化珪素単結晶ウェハ内部応力の評価方法。
- 請求項1に記載の評価方法であって、中心で測定されたラマンシフト値(A)と外周部で測定されたラマンシフト値(B)とのラマンシフト差(A−B)を用いる評価方法。
- 昇華再結晶法によって製造された炭化珪素単結晶ウェハの反りを事前に予測する方法であって、炭化珪素単結晶ウェハを得る際の最終研磨よりも前に測定した、表裏面のいずれか一方の面内の2点のラマンシフト値の差分を用いて、研磨工程完了後のウェハの反りを見積る、炭化珪素単結晶ウェハの反りの予測方法。
- 昇華再結晶法により得られた炭化珪素単結晶インゴットをスライスした単結晶薄板の表裏面のいずれか一方の面内の2点で測定されたラマンシフト値の差分を用いる、請求項3に記載の炭化珪素単結晶ウェハの反りの予測方法。
- ラマンシフト値の差分と炭化珪素単結晶ウェハの反りとの関係を予め求めておき、得られた関係式をもとに、ラマンシフト値の差分から炭化珪素単結晶ウェハの反りを予測する、請求項3又は4に記載の炭化珪素単結晶ウェハの反りの予測方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013195011A JP5944873B2 (ja) | 2013-09-20 | 2013-09-20 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
US15/023,254 US10031089B2 (en) | 2013-09-20 | 2014-05-30 | Method for evaluating internal stress of silicon carbide monocrystalline wafer and method for predicting warpage in silicone carbide monocrystalline wafer |
PCT/JP2014/064525 WO2015040895A1 (ja) | 2013-09-20 | 2014-05-30 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
EP14845966.2A EP3048641B1 (en) | 2013-09-20 | 2014-05-30 | Method for predicting warpage in silicon carbide monocrystalline wafer |
KR1020177006844A KR20170031268A (ko) | 2013-09-20 | 2014-05-30 | 탄화규소 단결정 웨이퍼의 내부 응력 평가 방법, 및 탄화규소 단결정 웨이퍼의 휨의 예측 방법 |
CN201480051759.0A CN105556649B (zh) | 2013-09-20 | 2014-05-30 | 碳化硅单晶晶片的内应力评价方法和碳化硅单晶晶片的翘曲预测方法 |
KR1020167009961A KR20160058867A (ko) | 2013-09-20 | 2014-05-30 | 탄화규소 단결정 웨이퍼의 내부 응력 평가 방법, 및 탄화규소 단결정 웨이퍼의 휨의 예측 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013195011A JP5944873B2 (ja) | 2013-09-20 | 2013-09-20 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015059073A true JP2015059073A (ja) | 2015-03-30 |
JP5944873B2 JP5944873B2 (ja) | 2016-07-05 |
Family
ID=52688558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013195011A Active JP5944873B2 (ja) | 2013-09-20 | 2013-09-20 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10031089B2 (ja) |
EP (1) | EP3048641B1 (ja) |
JP (1) | JP5944873B2 (ja) |
KR (2) | KR20170031268A (ja) |
CN (1) | CN105556649B (ja) |
WO (1) | WO2015040895A1 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019060681A (ja) * | 2017-09-26 | 2019-04-18 | クアーズテック株式会社 | 化合物半導体基板の評価方法、およびこれを用いた化合物半導体基板の製造方法 |
WO2019111507A1 (ja) * | 2017-12-08 | 2019-06-13 | 住友電気工業株式会社 | 炭化珪素基板 |
JP2019112261A (ja) * | 2017-12-22 | 2019-07-11 | 昭和電工株式会社 | SiC単結晶の加工方法及びSiCインゴットの製造方法 |
JP7268784B1 (ja) | 2022-05-31 | 2023-05-08 | 株式会社レゾナック | SiC基板及びSiCエピタキシャルウェハ |
KR102606186B1 (ko) | 2022-05-31 | 2023-11-29 | 가부시끼가이샤 레조낙 | SiC 기판 및 SiC 에피택셜 웨이퍼 |
KR20230169018A (ko) | 2022-05-31 | 2023-12-15 | 가부시끼가이샤 레조낙 | SiC 에피택셜 웨이퍼 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106480504B (zh) * | 2016-12-09 | 2018-10-12 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
US11078596B2 (en) * | 2017-03-30 | 2021-08-03 | Showa Denko K.K. | Method for evaluating quality of SiC single crystal body and method for producing silicon carbide single crystal ingot using the same |
CN107097148B (zh) * | 2017-06-13 | 2019-03-15 | 江苏吉星新材料有限公司 | 一种蓝宝石衬底片切片后的分类方法 |
JP6436255B1 (ja) * | 2018-02-27 | 2018-12-12 | 株式会社Sumco | シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法 |
US10593602B2 (en) * | 2018-04-27 | 2020-03-17 | Semiconductor Components Industries, Llc | Semiconductor substrate crack mitigation systems and related methods |
JP7188754B2 (ja) * | 2019-01-17 | 2022-12-13 | 東海光学株式会社 | 光学製品の反り予測方法及びプログラム |
CN110333224B (zh) * | 2019-07-15 | 2020-09-01 | 天津大学 | 改变拉曼光谱探测倾角的单晶硅主应力检测方法和装置 |
JPWO2021060368A1 (ja) * | 2019-09-27 | 2021-04-01 | ||
KR102195325B1 (ko) * | 2020-06-16 | 2020-12-24 | 에스케이씨 주식회사 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
CN112577647B (zh) * | 2020-11-26 | 2022-04-12 | 苏州长光华芯光电技术股份有限公司 | 一种半导体激光器芯片的应力测试系统及测试方法 |
KR102283879B1 (ko) | 2021-01-14 | 2021-07-29 | 에스케이씨 주식회사 | 탄화규소 웨이퍼의 제조방법, 탄화규소 웨이퍼 및 웨이퍼 제조용 시스템 |
TWI785592B (zh) | 2021-05-04 | 2022-12-01 | 環球晶圓股份有限公司 | 材料分析方法 |
TWI799940B (zh) * | 2021-08-10 | 2023-04-21 | 環球晶圓股份有限公司 | 碳化矽材料驗證方法及裝置 |
CN115981114B (zh) * | 2023-03-20 | 2023-06-09 | 青岛物元技术有限公司 | 光刻极限应力的确定方法及改善光刻工艺质量的方法 |
CN116657249A (zh) * | 2023-05-31 | 2023-08-29 | 上海天岳半导体材料有限公司 | 一种应力呈均向分布的碳化硅晶片及无损且精确测定晶片各向应力的方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1179896A (ja) * | 1997-08-27 | 1999-03-23 | Denso Corp | 炭化珪素単結晶の製造方法 |
JP2011138932A (ja) * | 2009-12-28 | 2011-07-14 | Shin-Etsu Chemical Co Ltd | 応力を低減したsos基板 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0731908A1 (en) * | 1994-09-30 | 1996-09-18 | Renishaw plc | Methods and apparatus for indentation, scratch or tribological testing |
JP4054243B2 (ja) | 2002-10-10 | 2008-02-27 | 新日本製鐵株式会社 | 炭化珪素単結晶ウェハの製造方法、および炭化珪素単結晶ウェハ |
US20040134418A1 (en) * | 2002-11-08 | 2004-07-15 | Taisuke Hirooka | SiC substrate and method of manufacturing the same |
JP4661039B2 (ja) | 2003-09-12 | 2011-03-30 | 住友電気工業株式会社 | 炭化珪素基板の製造方法 |
JP3772883B2 (ja) | 2003-11-19 | 2006-05-10 | 松下電器産業株式会社 | ヒートポンプ装置の運転制御方法 |
JP4494856B2 (ja) * | 2004-04-28 | 2010-06-30 | 新日本製鐵株式会社 | 炭化珪素単結晶成長用種結晶とその製造方法及びそれを用いた結晶成長方法 |
GB0510497D0 (en) * | 2004-08-04 | 2005-06-29 | Horiba Ltd | Substrate examining device |
JP4473769B2 (ja) | 2005-04-14 | 2010-06-02 | 新日本製鐵株式会社 | 炭化珪素単結晶の焼鈍方法 |
JP2007147607A (ja) * | 2005-11-07 | 2007-06-14 | Toray Res Center:Kk | 試料の応力または歪みを測定する方法 |
US20080144001A1 (en) * | 2006-12-15 | 2008-06-19 | Bauke Heeg | Spectral imaging device |
WO2011026915A1 (en) * | 2009-09-02 | 2011-03-10 | Imec | Process for manufacturing a crystalline silicon layer |
TWI445055B (zh) * | 2012-02-16 | 2014-07-11 | Univ Nat Taiwan | 於矽基板上成長氮化物的製作方法 |
US9593019B2 (en) * | 2013-03-15 | 2017-03-14 | Guardian Industries Corp. | Methods for low-temperature graphene precipitation onto glass, and associated articles/devices |
US9194804B2 (en) * | 2013-09-03 | 2015-11-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stress analysis of 3-D structures using tip-enhanced Raman scattering technology |
-
2013
- 2013-09-20 JP JP2013195011A patent/JP5944873B2/ja active Active
-
2014
- 2014-05-30 KR KR1020177006844A patent/KR20170031268A/ko not_active Application Discontinuation
- 2014-05-30 KR KR1020167009961A patent/KR20160058867A/ko active Search and Examination
- 2014-05-30 US US15/023,254 patent/US10031089B2/en active Active
- 2014-05-30 CN CN201480051759.0A patent/CN105556649B/zh active Active
- 2014-05-30 WO PCT/JP2014/064525 patent/WO2015040895A1/ja active Application Filing
- 2014-05-30 EP EP14845966.2A patent/EP3048641B1/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1179896A (ja) * | 1997-08-27 | 1999-03-23 | Denso Corp | 炭化珪素単結晶の製造方法 |
JP2011138932A (ja) * | 2009-12-28 | 2011-07-14 | Shin-Etsu Chemical Co Ltd | 応力を低減したsos基板 |
Non-Patent Citations (1)
Title |
---|
JPN6015048739; S.NAKASHIMA, H.HARIMA: 'Raman Investigation of SiC Polytypes' Physica Status Solidi. A. Applied Research Vol.162, No.1, 1997, p.39, 51 * |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019060681A (ja) * | 2017-09-26 | 2019-04-18 | クアーズテック株式会社 | 化合物半導体基板の評価方法、およびこれを用いた化合物半導体基板の製造方法 |
JP7400879B2 (ja) | 2017-12-08 | 2023-12-19 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素エピタキシャル基板 |
WO2019111507A1 (ja) * | 2017-12-08 | 2019-06-13 | 住友電気工業株式会社 | 炭化珪素基板 |
JPWO2019111507A1 (ja) * | 2017-12-08 | 2020-11-26 | 住友電気工業株式会社 | 炭化珪素基板 |
US11342418B2 (en) | 2017-12-08 | 2022-05-24 | Sumitomo Electric Industries, Ltd. | Silicon carbide substrate |
JP2022120059A (ja) * | 2017-12-08 | 2022-08-17 | 住友電気工業株式会社 | 炭化珪素基板および炭化珪素エピタキシャル基板 |
JP2019112261A (ja) * | 2017-12-22 | 2019-07-11 | 昭和電工株式会社 | SiC単結晶の加工方法及びSiCインゴットの製造方法 |
JP7268784B1 (ja) | 2022-05-31 | 2023-05-08 | 株式会社レゾナック | SiC基板及びSiCエピタキシャルウェハ |
KR102610099B1 (ko) | 2022-05-31 | 2023-12-05 | 가부시끼가이샤 레조낙 | SiC 기판 및 SiC 에피택셜 웨이퍼 |
EP4286567A1 (en) | 2022-05-31 | 2023-12-06 | Resonac Corporation | Sic substrate and sic epitaxial wafer |
EP4286568A1 (en) | 2022-05-31 | 2023-12-06 | Resonac Corporation | Sic substrate and sic epitaxial wafer |
JP2023176670A (ja) * | 2022-05-31 | 2023-12-13 | 株式会社レゾナック | SiC基板及びSiCエピタキシャルウェハ |
KR20230169018A (ko) | 2022-05-31 | 2023-12-15 | 가부시끼가이샤 레조낙 | SiC 에피택셜 웨이퍼 |
KR102606186B1 (ko) | 2022-05-31 | 2023-11-29 | 가부시끼가이샤 레조낙 | SiC 기판 및 SiC 에피택셜 웨이퍼 |
US11866846B2 (en) | 2022-05-31 | 2024-01-09 | Resonac Corporation | SiC substrate and SiC epitaxial wafer |
Also Published As
Publication number | Publication date |
---|---|
CN105556649B (zh) | 2018-03-02 |
KR20170031268A (ko) | 2017-03-20 |
EP3048641A4 (en) | 2017-05-17 |
US20160231256A1 (en) | 2016-08-11 |
CN105556649A (zh) | 2016-05-04 |
WO2015040895A1 (ja) | 2015-03-26 |
JP5944873B2 (ja) | 2016-07-05 |
EP3048641B1 (en) | 2022-03-09 |
US10031089B2 (en) | 2018-07-24 |
EP3048641A1 (en) | 2016-07-27 |
KR20160058867A (ko) | 2016-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5944873B2 (ja) | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 | |
JP6251804B2 (ja) | バルク状炭化珪素単結晶の評価方法 | |
KR102160863B1 (ko) | 탄화규소 단결정 웨이퍼 | |
JP5014737B2 (ja) | SiC単結晶基板の製造方法 | |
JP5304712B2 (ja) | 炭化珪素単結晶ウェハ | |
US20210301421A1 (en) | SiC WAFER AND MANUFACTURING METHOD FOR SiC WAFER | |
CN113046825B (zh) | 一种高质量SiC单晶片及其制备方法 | |
US20240093406A1 (en) | SiC EPITAXIAL WAFER | |
JPWO2017126561A1 (ja) | 単結晶ダイヤモンド、単結晶ダイヤモンドの製造方法およびそれに用いられる化学気相堆積装置 | |
JP6981505B2 (ja) | 炭化珪素エピタキシャル基板の製造方法 | |
KR102606186B1 (ko) | SiC 기판 및 SiC 에피택셜 웨이퍼 | |
Jung et al. | Evolution of mechanically formed bow due to surface waviness and residual stress difference on sapphire (0001) substrate | |
JP6964388B2 (ja) | 炭化珪素エピタキシャル基板 | |
JP7216244B1 (ja) | 半導体デバイスの製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20150914 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20150914 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20151127 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20151208 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160205 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20160510 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20160526 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5944873 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |