CN105556649A - 碳化硅单晶晶片的内应力评价方法和碳化硅单晶晶片的翘曲预测方法 - Google Patents
碳化硅单晶晶片的内应力评价方法和碳化硅单晶晶片的翘曲预测方法 Download PDFInfo
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- CN105556649A CN105556649A CN201480051759.0A CN201480051759A CN105556649A CN 105556649 A CN105556649 A CN 105556649A CN 201480051759 A CN201480051759 A CN 201480051759A CN 105556649 A CN105556649 A CN 105556649A
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- wafer
- warpage
- silicon carbide
- single crystal
- carbide single
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 77
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 74
- 238000000034 method Methods 0.000 title claims abstract description 61
- 238000001953 recrystallisation Methods 0.000 claims abstract description 14
- 238000011156 evaluation Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 77
- 238000001069 Raman spectroscopy Methods 0.000 claims description 73
- 238000000227 grinding Methods 0.000 claims description 49
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 238000004821 distillation Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000011218 segmentation Effects 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 136
- 230000008569 process Effects 0.000 description 15
- 229910003460 diamond Inorganic materials 0.000 description 12
- 239000010432 diamond Substances 0.000 description 12
- 238000005520 cutting process Methods 0.000 description 11
- 238000005498 polishing Methods 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 238000001835 Lely method Methods 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000006073 displacement reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052754 neon Inorganic materials 0.000 description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000007717 exclusion Effects 0.000 description 2
- 230000009972 noncorrosive effect Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 208000037656 Respiratory Sounds Diseases 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- -1 { 0001} Chemical compound 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/24—Measuring force or stress, in general by measuring variations of optical properties of material when it is stressed, e.g. by photoelastic stress analysis using infrared, visible light, ultraviolet
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
- G01N21/65—Raman scattering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/06—Illumination; Optics
- G01N2201/061—Sources
- G01N2201/06113—Coherent sources; lasers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims (5)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013195011A JP5944873B2 (ja) | 2013-09-20 | 2013-09-20 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
JP2013-195011 | 2013-09-20 | ||
PCT/JP2014/064525 WO2015040895A1 (ja) | 2013-09-20 | 2014-05-30 | 炭化珪素単結晶ウェハの内部応力評価方法、及び炭化珪素単結晶ウェハの反りの予測方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105556649A true CN105556649A (zh) | 2016-05-04 |
CN105556649B CN105556649B (zh) | 2018-03-02 |
Family
ID=52688558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480051759.0A Active CN105556649B (zh) | 2013-09-20 | 2014-05-30 | 碳化硅单晶晶片的内应力评价方法和碳化硅单晶晶片的翘曲预测方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10031089B2 (zh) |
EP (1) | EP3048641B1 (zh) |
JP (1) | JP5944873B2 (zh) |
KR (2) | KR20170031268A (zh) |
CN (1) | CN105556649B (zh) |
WO (1) | WO2015040895A1 (zh) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109196146A (zh) * | 2017-03-30 | 2019-01-11 | 昭和电工株式会社 | SiC单晶体的品质评价方法及利用该方法的碳化硅单晶锭的制造方法 |
CN110333224A (zh) * | 2019-07-15 | 2019-10-15 | 天津大学 | 改变拉曼光谱探测倾角的单晶硅主应力检测方法和装置 |
CN111433394A (zh) * | 2017-12-08 | 2020-07-17 | 住友电气工业株式会社 | 碳化硅衬底 |
CN112577647A (zh) * | 2020-11-26 | 2021-03-30 | 苏州长光华芯光电技术股份有限公司 | 一种半导体激光器芯片的应力测试系统及测试方法 |
CN113302522A (zh) * | 2019-01-17 | 2021-08-24 | 东海光学株式会社 | 光学制品的翘曲预测方法和程序 |
CN115981114A (zh) * | 2023-03-20 | 2023-04-18 | 青岛物元技术有限公司 | 光刻极限应力的确定方法及改善光刻工艺质量的方法 |
CN117144472A (zh) * | 2022-05-31 | 2023-12-01 | 株式会社力森诺科 | SiC基板和SiC外延晶片 |
US11859965B2 (en) | 2021-05-04 | 2024-01-02 | Globalwafers Co., Ltd. | Material analysis method |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106480504B (zh) * | 2016-12-09 | 2018-10-12 | 河北同光晶体有限公司 | 一种降低大直径SiC单晶内应力的炉后退火方法 |
CN107097148B (zh) * | 2017-06-13 | 2019-03-15 | 江苏吉星新材料有限公司 | 一种蓝宝石衬底片切片后的分类方法 |
JP6831764B2 (ja) * | 2017-09-26 | 2021-02-17 | クアーズテック株式会社 | 化合物半導体基板の評価方法、およびこれを用いた化合物半導体基板の製造方法 |
JP2019112261A (ja) * | 2017-12-22 | 2019-07-11 | 昭和電工株式会社 | SiC単結晶の加工方法及びSiCインゴットの製造方法 |
JP6436255B1 (ja) * | 2018-02-27 | 2018-12-12 | 株式会社Sumco | シリコンウェーハの反り量の予測方法およびシリコンウェーハの製造方法 |
US10593602B2 (en) * | 2018-04-27 | 2020-03-17 | Semiconductor Components Industries, Llc | Semiconductor substrate crack mitigation systems and related methods |
JPWO2021060368A1 (zh) * | 2019-09-27 | 2021-04-01 | ||
KR102195325B1 (ko) * | 2020-06-16 | 2020-12-24 | 에스케이씨 주식회사 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
KR102283879B1 (ko) | 2021-01-14 | 2021-07-29 | 에스케이씨 주식회사 | 탄화규소 웨이퍼의 제조방법, 탄화규소 웨이퍼 및 웨이퍼 제조용 시스템 |
TWI799940B (zh) * | 2021-08-10 | 2023-04-21 | 環球晶圓股份有限公司 | 碳化矽材料驗證方法及裝置 |
KR20230169018A (ko) | 2022-05-31 | 2023-12-15 | 가부시끼가이샤 레조낙 | SiC 에피택셜 웨이퍼 |
JP7132454B1 (ja) | 2022-05-31 | 2022-09-06 | 昭和電工株式会社 | SiC基板及びSiCエピタキシャルウェハ |
CN116657249A (zh) * | 2023-05-31 | 2023-08-29 | 上海天岳半导体材料有限公司 | 一种应力呈均向分布的碳化硅晶片及无损且精确测定晶片各向应力的方法 |
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2013
- 2013-09-20 JP JP2013195011A patent/JP5944873B2/ja active Active
-
2014
- 2014-05-30 KR KR1020177006844A patent/KR20170031268A/ko not_active Application Discontinuation
- 2014-05-30 KR KR1020167009961A patent/KR20160058867A/ko active Search and Examination
- 2014-05-30 US US15/023,254 patent/US10031089B2/en active Active
- 2014-05-30 CN CN201480051759.0A patent/CN105556649B/zh active Active
- 2014-05-30 WO PCT/JP2014/064525 patent/WO2015040895A1/ja active Application Filing
- 2014-05-30 EP EP14845966.2A patent/EP3048641B1/en active Active
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Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109196146A (zh) * | 2017-03-30 | 2019-01-11 | 昭和电工株式会社 | SiC单晶体的品质评价方法及利用该方法的碳化硅单晶锭的制造方法 |
CN109196146B (zh) * | 2017-03-30 | 2021-02-26 | 昭和电工株式会社 | SiC单晶体的品质评价方法及利用该方法的碳化硅单晶锭的制造方法 |
CN111433394B (zh) * | 2017-12-08 | 2022-06-21 | 住友电气工业株式会社 | 碳化硅衬底 |
CN111433394A (zh) * | 2017-12-08 | 2020-07-17 | 住友电气工业株式会社 | 碳化硅衬底 |
CN113302522A (zh) * | 2019-01-17 | 2021-08-24 | 东海光学株式会社 | 光学制品的翘曲预测方法和程序 |
CN110333224B (zh) * | 2019-07-15 | 2020-09-01 | 天津大学 | 改变拉曼光谱探测倾角的单晶硅主应力检测方法和装置 |
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CN105556649B (zh) | 2018-03-02 |
KR20170031268A (ko) | 2017-03-20 |
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US20160231256A1 (en) | 2016-08-11 |
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