JP2015056238A - 金属粒子ペースト、これを用いた硬化物、および半導体装置 - Google Patents
金属粒子ペースト、これを用いた硬化物、および半導体装置 Download PDFInfo
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- JP2015056238A JP2015056238A JP2013187709A JP2013187709A JP2015056238A JP 2015056238 A JP2015056238 A JP 2015056238A JP 2013187709 A JP2013187709 A JP 2013187709A JP 2013187709 A JP2013187709 A JP 2013187709A JP 2015056238 A JP2015056238 A JP 2015056238A
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- Prior art keywords
- metal
- particle paste
- metal particle
- particles
- polar solvent
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- 239000000126 substance Substances 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
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Classifications
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/09—Mixtures of metallic powders
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/264—Bi as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/282—Zn as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/28—Selection of soldering or welding materials proper with the principal constituent melting at less than 950 degrees C
- B23K35/286—Al as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3013—Au as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3033—Ni as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
- B23K35/322—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C a Pt-group metal as principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/32—Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
- B23K35/325—Ti as the principal constituent
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/3601—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest with inorganic compounds as principal constituents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B23K35/362—Selection of compositions of fluxes
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/047—Making non-ferrous alloys by powder metallurgy comprising intermetallic compounds
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
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- C22C5/06—Alloys based on silver
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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Abstract
Description
(b)グリコールエーテル類(例えば、エチレングリコールモノメチルエーテル、エチレングリコールモノエチルエーテル、エチレングリコールモノブチルエーテル、ジエチレングリコールモノメチルエーテル、ジエチレングリコールモノエチルエーテル、ジエチレングリコールモノブチルエーテル、トリエチレングリコールモノブチルエーテル、プロピレングリコールモノメチルエーテル、ジプロピレングリコールモノメチルエーテル、トリプロピレングリコールブチルエーテル等の(ポリ)アルキレングリコールモノアルキルエーテル;2−フェノキシエタノール等の(ポリ)アルキレングリコールモノアリールエーテル等)
(c)グリコールエステル類(例えば、酢酸カルビトール等の(ポリ)アルキレングリコールアセテート等)
(d)グリコールエーテルエステル類(例えば、エチレングリコールモノエチルエーテルアセテート、エチレングリコールモノメチルエーテルアセテート、ジエチレングリコールモノブチルエーテルアセテート、ジエチレングリコールモノエチルエーテルアセテート、プロピレングリコールモノメチルエーテルアセテート等の(ポリ)アルキレングリコールモノアルキルエーテルアセテート)
(e)エステル類(例えば、酢酸ベンジル、酢酸イソボルネオール、安息香酸メチル、安息香酸エチル等)
(f)アミノ化合物(モノエタノールアミン、ジエタノールアミン、トリエタノールアミン、N−メチルジエタノールアミン、N−エチルジエタノールアミン等)
(g)上記以外の脂肪族炭化水素類(例えば、テトラデカン、オクタデカン、ヘプタメチルノナン、テトラメチルペンタデカン等の飽和又は不飽和脂肪族炭化水素類)
(h)上記以外の芳香族炭化水素類(例えば、トルエン、キシレン等))
また、極性溶媒として水を用いることもできる。これらの極性溶媒は、分離せず均一に混合できる限り、2種以上組み合わせて使用してもよい。
極性溶媒へ可溶であって、所望の硬化物が形成可能であれば、第二の金属の含有量は特に限定されない。金属粒子ペースト中における第二の金属の量が、溶解度に対して小過剰量の場合でも、硬化物中で第一の金属の拡散を抑制する効果は確認されている。第二の金属は、量が少ないほど極性溶媒へ容易に溶解し、硬化物の強度や電気伝導性および熱伝導性へ及ぼす影響も小さい。
第一の金属としてAgを用い、第二の金属としてNiを用いて、金属粒子ペーストを調製した。第一の金属の粒子としては、粒子径20nm程度のAg粒子が含有されており、このAg粒子が極性溶媒としてのテルピネオール中に分散されている。ペースト中におけるAg粒子の量は、80質量%程度である。
表1に記載された金属粒子ペーストを用いて試験片を作製し、ダイシェア試験を行なった。まず、Cu貼りセラミック基板を用意し、アセトン中での超音波洗浄および塩酸中での酸洗いによる前処理を施した。なお、Cu膜は電極として用いられる。次いで、水洗し、乾燥してCu電極上の酸化膜を除去した。このCu電極上に0.05mm厚のメタルマスクを用い、金属粒子ペーストを4mm□のパターンに印刷した。
前述と同様の処理を施して、Cu電極表面の酸化膜が除去されたCu貼りセラミック基板を用意した。このCu貼りセラミック基板上に、前述と同様のメタルマスクを用いて金属粒子ペーストを8mm□のパターンに印刷した。それを100℃で30分乾燥させた後、印刷パターンの中央に7mm□のSiCチップを配置した。用いたSiCチップの裏面最表面には、Au電極が設けられている。ダイボンダを用いて窒素雰囲気中、300℃/5MPaで5分加熱加圧することにより接合して試験片を作製した。
断面組織中のボイド及び金属の面積は、市販の画像処理ソフトを用いて断面組織写真を二値化した後、それぞれの画素数から算出した。
このボイド面積比の値が1に近いほど、接合層6中におけるボイドが偏りなく存在していることになる。高温放置試験前(初期)においては、いずれの金属粒子ペーストを用いた試験片でもボイド面積比は1であった。
極性溶媒と、
前記極性溶媒中に分散され、第一の金属を含む粒子とを含有し、
前記極性溶媒中には、前記第一の金属とは異なる第二の金属が溶解されていることを特徴とする金属粒子ペースト。
前記第二の金属の濃度は、前記第一の金属に対して0.001原子%以上であることを特徴とする付記1に記載の金属粒子ペースト。
前記第一の金属は、Au、Pt、Pd、Ru、Rh、Ir、Ag、Cu、Ni、Zn、Bi、Fe、Mo、Al、Cr、およびVからなる群から選択されることを特徴とする付記1または2に記載の金属粒子ペースト。
前記第二の金属は、アルカリ土類金属、Ag、Cu、Cr、Ni、Nb、Mo、Sn、Bi、In、Sb、Ge、Co、Zn、Ti、Al、V、Y、Zr、Hf、Be、Mg、Mn、Fe、Zr、およびWからなる群から選択されることを特徴とする付記1〜3のいずれかに記載の金属粒子ペースト。
前記第二の金属の量は、前記極性溶媒に対する溶解度以下であることを特徴とする付記1〜4のいずれかに記載の金属粒子ペースト。
前記第二の金属は、金属単体または有機金属のイオンとして含有されていることを特徴とする付記1〜5のいずれかに記載の金属粒子ペースト。
前記第二の金属は、有機金属化合物または塩として添加されたものであることを特徴とする付記1〜5のいずれかに記載の金属粒子ペースト。
付記1〜7のいずれかに記載の金属粒子ペーストを乾燥させてなる乾燥物であって、前記第二の金属が析出した粒子を含むことを特徴とする乾燥物。
前記第一の金属を含む粒子は凝集体を形成し、個々の粒子の粒子径は500nm以下であり、前記第二の金属が析出した粒子の粒子径は100nm以下であることを特徴とする付記8に記載の乾燥物。
バインダーをさらに含有する付記8または9に記載の乾燥物。
付記1〜7のいずれかに記載の金属粒子ペースト、または付記8〜10のいずれかに記載の乾燥物を硬化させてなる硬化物であって、前記第一の金属の粒界及び粒界近傍に前記第二の金属が存在することを特徴とする硬化物。
配線を有する基板と、接合部を介して前記基板上に設けられた電子部品および/または電極とを具備する半導体装置であって、
前記配線、前記接合部、および前記電極の少なくとも1つに付記11に記載の硬化物を含むことを特徴とする半導体装置。
4…第二の金属が溶解された極性溶媒; 5…SiCチップ; 6…接合層
6a…上側層; 6b…下側層; 7…Cu貼りセラミック基板; 9…試験片
10…金属粒子ペースト; 12…金属粒子ペースト; 13…Cu電極
14…ボイド。
Claims (10)
- 極性溶媒と、
前記極性溶媒中に分散され、第一の金属を含む粒子とを含有し、
前記極性溶媒中には、前記第一の金属とは異なる第二の金属が溶解されていることを特徴とする金属粒子ペースト。 - 前記第二の金属の濃度は、前記第一の金属に対して0.001原子%以上であることを特徴とする請求項1に記載の金属粒子ペースト。
- 前記第一の金属は、Au、Pt、Pd、Ru、Rh、Ir、Ag、Cu、Ni、Zn、Bi、Fe、Mo、Al、Cr、およびVからなる群から選択されることを特徴とする請求項1または2に記載の金属粒子ペースト。
- 前記第二の金属は、アルカリ土類金属、Ag、Cu、Cr、Ni、Nb、Mo、Sn、Bi、In、Sb、Ge、Co、Zn、Ti、Al、V、Y、Zr、Hf、Be、Mg、Mn、Fe、Zr、およびWからなる群から選択されることを特徴とする請求項1〜3のいずれか1項に記載の金属粒子ペースト。
- 前記第二の金属の量は、前記極性溶媒に対する溶解度以下であることを特徴とする請求項1〜4のいずれか1項に記載の金属粒子ペースト。
- 前記第二の金属は、金属単体または有機金属のイオンとして含有されていることを特徴とする請求項1〜5のいずれか1項に記載の金属粒子ペースト。
- 前記第二の金属は、有機金属化合物または塩として添加されたものであることを特徴とする請求項1〜5のいずれか1項に記載の金属粒子ペースト。
- 請求項1〜7のいずれか1項に記載の金属粒子ペーストを乾燥させてなる乾燥物であって、前記第二の金属が析出した粒子を含むことを特徴とする乾燥物。
- 請求項1〜7のいずれか1項に記載の金属粒子ペースト、または請求項8に記載の乾燥物を硬化させてなる硬化物であって、前記第一の金属の粒界及び粒界近傍に前記第二の金属が存在することを特徴とする硬化物。
- 配線を有する基板と、接合部を介して前記基板上に設けられた電子部品および/または電極とを具備する半導体装置であって、
前記配線、前記接合部、および前記電極の少なくとも1つに請求項9に記載の硬化物を含むことを特徴とする半導体装置。
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US14/337,624 US10086478B2 (en) | 2013-09-10 | 2014-07-22 | Metallic particle paste, cured product using same, and semiconductor device |
EP14178910.7A EP2858101A3 (en) | 2013-09-10 | 2014-07-29 | Paste comprising first metal particles and a polar solvent with a second metal dissolved therein, cured product obtained therefrom, and semiconductor device comprising the cured product |
CN201410452753.6A CN104425055B (zh) | 2013-09-10 | 2014-09-05 | 金属粒子膏糊、使用了其的固化物及半导体装置 |
CN201710589627.9A CN107262958A (zh) | 2013-09-10 | 2014-09-05 | 金属粒子膏糊、使用了其的固化物及半导体装置 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018148168A (ja) * | 2017-03-09 | 2018-09-20 | 日立化成株式会社 | 半導体装置 |
US11342249B2 (en) | 2019-09-06 | 2022-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11476223B2 (en) | 2019-09-02 | 2022-10-18 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6667433B2 (ja) * | 2013-09-24 | 2020-03-18 | ヘレウス ドイチェラント ゲーエムベーハー ウント カンパニー カーゲー | 低温にて光沢のある積層構造を生成するためのプロセス |
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US11097378B2 (en) * | 2015-10-29 | 2021-08-24 | Zephyros, Inc. | Conductive nodes |
US9620466B1 (en) * | 2015-11-30 | 2017-04-11 | Infineon Technologies Ag | Method of manufacturing an electronic device having a contact pad with partially sealed pores |
SG11201906411TA (en) * | 2017-01-11 | 2019-08-27 | Hitachi Chemical Co Ltd | Copper paste for pressureless bonding, bonded body and semiconductor device |
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JP6561100B2 (ja) * | 2017-10-04 | 2019-08-14 | Jx金属株式会社 | 表面処理銅微粒子の製造方法 |
TWI665046B (zh) * | 2017-11-07 | 2019-07-11 | 財團法人金屬工業研究發展中心 | 輕金屬接合方法及其接合填料 |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006011180A1 (ja) * | 2004-06-23 | 2006-02-02 | Harima Chemicals, Inc. | 導電性金属ペースト |
WO2006070747A1 (ja) * | 2004-12-27 | 2006-07-06 | Mitsui Mining & Smelting Co., Ltd. | 導電性インク |
JP2008069374A (ja) * | 2006-09-12 | 2008-03-27 | Nippon Shokubai Co Ltd | 金属ナノ粒子分散体および金属被膜 |
JP2009295965A (ja) * | 2008-05-01 | 2009-12-17 | Xerox Corp | 導電性インク用の二金属ナノ粒子 |
JP2011034749A (ja) * | 2009-07-31 | 2011-02-17 | Tosoh Corp | 導電膜形成用組成物、及び導電膜形成方法 |
Family Cites Families (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882722A (en) | 1995-07-12 | 1999-03-16 | Partnerships Limited, Inc. | Electrical conductors formed from mixtures of metal powders and metallo-organic decompositions compounds |
TW396471B (en) * | 1997-06-04 | 2000-07-01 | Ibm | Electrodeposition of low temperature, high conductivity, powder materials for electrically conductive paste formulations |
TWI248384B (en) | 2000-06-12 | 2006-02-01 | Hitachi Ltd | Electronic device |
US6569252B1 (en) * | 2000-06-30 | 2003-05-27 | International Business Machines Corporation | Semi-aqueous solvent cleaning of paste processing residue from substrates |
JP4763237B2 (ja) | 2001-10-19 | 2011-08-31 | キャボット コーポレイション | 基板上に導電性電子部品を製造する方法 |
DE102004019567B3 (de) | 2004-04-22 | 2006-01-12 | Semikron Elektronik Gmbh & Co. Kg | Verfahren zur Befestigung von elektronischen Bauelementen auf einem Substrat |
JP2006202938A (ja) * | 2005-01-20 | 2006-08-03 | Kojiro Kobayashi | 半導体装置及びその製造方法 |
JP5309440B2 (ja) | 2005-11-15 | 2013-10-09 | 三菱マテリアル株式会社 | 太陽電池の電極形成用組成物及び該電極の形成方法並びに該形成方法により得られた電極を用いた太陽電池の製造方法 |
JP4638825B2 (ja) | 2006-02-01 | 2011-02-23 | 三井金属鉱業株式会社 | 多成分系金属粒子スラリー及びそのスラリーを用いた導電性インク又は導電性ペースト |
JP5151229B2 (ja) | 2007-02-23 | 2013-02-27 | 三菱マテリアル株式会社 | 太陽電池の電極形成用組成物及び該電極の形成方法並びに該形成方法により得られた電極を用いた太陽電池の製造方法 |
JP5076753B2 (ja) | 2007-09-05 | 2012-11-21 | 三菱マテリアル株式会社 | 高濃度金属ナノ粒子分散液の製造方法 |
JP2009097074A (ja) | 2007-09-27 | 2009-05-07 | Mitsuboshi Belting Ltd | 金属ナノ粒子ペーストおよびパターン形成方法 |
DE102008034946B4 (de) | 2008-07-26 | 2016-05-19 | Semikron Elektronik Gmbh & Co. Kg | Herstellungsverfahren eines Edelmetallverbindungsmittels |
WO2010114874A2 (en) | 2009-04-02 | 2010-10-07 | Ormet Circuits Inc. | Conductive compositions containing blended alloy fillers |
DE102009018541A1 (de) | 2009-04-24 | 2010-10-28 | W.C. Heraeus Gmbh | Kontaktierungsmittel und Verfahren zur Kontaktierung elektrischer Bauteile |
CN101908388B (zh) * | 2009-06-04 | 2013-01-23 | 财团法人工业技术研究院 | 纳米点状材料的形成方法 |
JP5580562B2 (ja) | 2009-09-09 | 2014-08-27 | 地方独立行政法人 大阪市立工業研究所 | 銀−銅系混合粉末及びそれを用いた接合方法 |
JP4928639B2 (ja) | 2010-03-15 | 2012-05-09 | Dowaエレクトロニクス株式会社 | 接合材およびそれを用いた接合方法 |
KR101755749B1 (ko) | 2010-03-19 | 2017-07-07 | 후루카와 덴키 고교 가부시키가이샤 | 도전 접속부재, 및 도전 접속부재의 제작방법 |
JP5311147B2 (ja) | 2010-08-25 | 2013-10-09 | 株式会社豊田中央研究所 | 表面被覆金属ナノ粒子、その製造方法、およびそれを含む金属ナノ粒子ペースト |
US9449734B2 (en) | 2010-08-27 | 2016-09-20 | Lg Chem, Ltd. | Conductive metal ink composition, and method for preparing a conductive pattern |
JP5316602B2 (ja) | 2010-12-16 | 2013-10-16 | 株式会社日本自動車部品総合研究所 | 熱拡散部材の接合構造、発熱体の冷却構造、及び熱拡散部材の接合方法 |
JP4771562B1 (ja) | 2011-02-10 | 2011-09-14 | 田中電子工業株式会社 | Ag−Au−Pd三元合金系ボンディングワイヤ |
JP5899623B2 (ja) * | 2011-02-10 | 2016-04-06 | 三菱マテリアル株式会社 | はんだ接合用積層体および接合体 |
JP2012248743A (ja) | 2011-05-30 | 2012-12-13 | Japan Display West Co Ltd | 半導体装置およびその製造方法、表示装置ならびに電子機器 |
DE102011109226A1 (de) * | 2011-08-02 | 2013-02-07 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Verbindungsschicht mit einem Sintermaterial, Verwendung einer Mischung zur Herstellung einer Verbindungsschicht, Verbindungsschicht mit einem Sintermaterial und Bauelement mit einer Verbindungsschicht |
JP2012124497A (ja) | 2011-12-26 | 2012-06-28 | Hitachi Metals Ltd | 半導体装置 |
-
2013
- 2013-09-10 JP JP2013187709A patent/JP6132716B2/ja active Active
-
2014
- 2014-07-22 US US14/337,624 patent/US10086478B2/en active Active
- 2014-07-29 EP EP14178910.7A patent/EP2858101A3/en not_active Withdrawn
- 2014-09-05 CN CN201710589627.9A patent/CN107262958A/zh not_active Withdrawn
- 2014-09-05 CN CN201410452753.6A patent/CN104425055B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006011180A1 (ja) * | 2004-06-23 | 2006-02-02 | Harima Chemicals, Inc. | 導電性金属ペースト |
WO2006070747A1 (ja) * | 2004-12-27 | 2006-07-06 | Mitsui Mining & Smelting Co., Ltd. | 導電性インク |
JP2008069374A (ja) * | 2006-09-12 | 2008-03-27 | Nippon Shokubai Co Ltd | 金属ナノ粒子分散体および金属被膜 |
JP2009295965A (ja) * | 2008-05-01 | 2009-12-17 | Xerox Corp | 導電性インク用の二金属ナノ粒子 |
JP2011034749A (ja) * | 2009-07-31 | 2011-02-17 | Tosoh Corp | 導電膜形成用組成物、及び導電膜形成方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018148168A (ja) * | 2017-03-09 | 2018-09-20 | 日立化成株式会社 | 半導体装置 |
US11476223B2 (en) | 2019-09-02 | 2022-10-18 | Kabushiki Kaisha Toshiba | Semiconductor device and manufacturing method thereof |
US11342249B2 (en) | 2019-09-06 | 2022-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device |
US11769715B2 (en) | 2019-09-06 | 2023-09-26 | Kabushiki Kaisha Toshiba | Semiconductor device |
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