JP2021529258A - 焼結ダイアタッチ及び類似した用途のためのナノ銅ペースト及びフィルム - Google Patents
焼結ダイアタッチ及び類似した用途のためのナノ銅ペースト及びフィルム Download PDFInfo
- Publication number
- JP2021529258A JP2021529258A JP2020572393A JP2020572393A JP2021529258A JP 2021529258 A JP2021529258 A JP 2021529258A JP 2020572393 A JP2020572393 A JP 2020572393A JP 2020572393 A JP2020572393 A JP 2020572393A JP 2021529258 A JP2021529258 A JP 2021529258A
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- Prior art keywords
- sintered
- paste
- powder
- sintered powder
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000843 powder Substances 0.000 claims abstract description 103
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000010949 copper Substances 0.000 claims abstract description 61
- 229910052802 copper Inorganic materials 0.000 claims abstract description 60
- 239000002245 particle Substances 0.000 claims abstract description 59
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims description 54
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 17
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000011230 binding agent Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 14
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 13
- 229910001431 copper ion Inorganic materials 0.000 claims description 13
- 239000003638 chemical reducing agent Substances 0.000 claims description 12
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- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 claims description 7
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 claims description 7
- 229940116411 terpineol Drugs 0.000 claims description 7
- POYODSZSSBWJPD-UHFFFAOYSA-N 2-methylprop-2-enoyloxy 2-methylprop-2-eneperoxoate Chemical compound CC(=C)C(=O)OOOC(=O)C(C)=C POYODSZSSBWJPD-UHFFFAOYSA-N 0.000 claims description 6
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 claims description 6
- -1 distributors Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
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- 150000001879 copper Chemical class 0.000 claims description 4
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- 239000000243 solution Substances 0.000 description 24
- 230000003647 oxidation Effects 0.000 description 14
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 238000009826 distribution Methods 0.000 description 11
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- 238000005476 soldering Methods 0.000 description 11
- 230000002349 favourable effect Effects 0.000 description 10
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
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- 238000004626 scanning electron microscopy Methods 0.000 description 6
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- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 4
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- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
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- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
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- RXWOHFUULDINMC-UHFFFAOYSA-N 2-(3-nitrothiophen-2-yl)acetic acid Chemical compound OC(=O)CC=1SC=CC=1[N+]([O-])=O RXWOHFUULDINMC-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
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- VRAIHTAYLFXSJJ-UHFFFAOYSA-N alumane Chemical compound [AlH3].[AlH3] VRAIHTAYLFXSJJ-UHFFFAOYSA-N 0.000 description 1
- VTPOUKKGBUPOCH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu].[Cu].[Cu] VTPOUKKGBUPOCH-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
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- 125000003118 aryl group Chemical group 0.000 description 1
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- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 229940076286 cupric acetate Drugs 0.000 description 1
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
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- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
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- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
- B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
- B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
- B23K35/0244—Powders, particles or spheres; Preforms made therefrom
- B23K35/025—Pastes, creams, slurries
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B22F2301/00—Metallic composition of the powder or its coating
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Abstract
Description
粒子は、キャッピング剤で少なくとも部分的にコーティングされ、
粒子は、100nm以上のD10及び2000nm以下のD90を呈する。
分布の90%は、より小さい粒径を有し、10%はより大きい
粒径を有する。D10直径は、10%いっそう小さく、90%いっそう大きい。当該技術分野において従来のように、直径は等価球面直径に相当し、分布は体積分布に対応する。D10及びD90は、例えば、レーザー回折、動的光散乱、及びSEM画像解析などの当該技術分野において既知の好適な技術によって測定することができる。
70〜90重量%の焼結粉末と、
1〜3重量%の活性剤と、
0.5〜2重量%の分散剤と、
10〜15重量%の有機溶媒と、
任意に、1〜5重量%の結合剤を含む。
銅イオン及びキャッピング剤を含む溶液を提供する工程と、
溶液を還元剤と接触させて、焼結粉末を提供する工程と、
焼結粉末を回収する工程と、を含む。
銅イオン及びキャッピング剤を含む溶液を提供する工程と、
溶液を還元剤と接触させて、焼結粉末を提供する工程と、
焼結粉末を回収する工程と、を含む。
本明細書に記載の焼結粉末を提供する工程と、
焼結粉末を有機溶媒及び任意に活性剤、分散剤、キャッピング剤及び結合剤のうちの1つ以上を混合する工程と、を含む。
接合される2つ以上の作業片を提供する工程と、
本明細書に記載の焼結粉末及び/又は本明細書に記載の焼結ペースト及び/又は本明細書に記載の焼結フィルムを、2つ以上の作業片の近傍に提供する工程と、
焼結粉末及び/又は焼結ペースト及び/又は焼結フィルムを乾燥させる工程と、
焼結粉末及び/又は焼結ペースト及び/又は焼結フィルムを加熱して、金属を少なくとも部分的に焼結する工程と、を含む、方法。
焼結ペーストが、接合される作業片のうちの1つ以上の上にスクリーン印刷されて、スクリーン印刷パターンを形成し、
スクリーン印刷パターンにはんだが適用され、
任意に、スクリーン印刷パターンは、はんだが適用される前に無電解ニッケル浸漬金(ENIG)技術によってコーティングされる。
酢酸第二銅(100g)を脱塩水(1500mL)に溶解した。酢酸第二銅の水溶液にトリエタノールアミン(20g)を激しく撹拌しながら滴下し、次いで溶液を30分間撹拌した。次いで水酸化カリウム/水酸化ナトリウム(100mLの水中20gの水酸化カリウム)を加えて、溶液を塩基性(pH>7)にし、溶液を更に30分間撹拌した。この混合物に、過剰なヒドラジン水和物溶液(150mL)を、滴下漏斗を介して添加した。反応が相当の発熱を伴い、発泡を生じるため、予防を講じるべきである。したがって、反応の温度を20〜25℃に維持した水槽で反応を実施した。次いで、得られた溶液を6時間撹拌した。反応混合物の色は青みがかった緑から橙色に変化し、次いで最終的に淡褐色に変化した。次いで、溶液を1時間静置して、合成銅粒子を底部に沈殿させ、次いで得られた溶液(母液)をデカントした。次いで、合成粉末を過剰な水で十分に洗浄し、不要な反応物を除去した。次いで、洗浄した粉末をアセトンで洗浄する。粉末を35℃で乾燥させた。
実施例2.1:
上記合成されたナノ銅粉末(24g)を、高速ミキサー(1000rpm、1分)を用いてエポキシメタクリレートウレタン(0.279g)で分散させた。分散液に、トリエタノールアミン(85%、0.279g)、BYK 163(0.558g)、マロン酸(1.116g)及びテルピネオール(1.674g)を加え、高速ミキサーを用いて1000rpmで1分間混合した。次いで、得られた混合物を、EXAKT3ロールミルを使用して完全に粉砕した。次いで、収集した均質な印刷可能ペーストを、標準温度と圧力(STP)下で保管した。
上記合成されたナノ銅粉末(15g)を、高速軌道ミキサーを用いてエポキシメタクリレートウレタン(0.70g)で分散させた。分散液に、BYK(0.70g)を添加した。マロン酸のメタノール溶液(1.41gのメタノール中1.41gのマロン酸)を分散液に添加し、続いてテルピネオール(1.5g)を添加した。次いで、混合物を高速軌道混合物に入れ、3ロールミルで数分間粉砕して均質なペーストを得た。
上記合成されたナノ銅粉末(15g)を、高速軌道ミキサーを用いてエポキシメタクリレートウレタン(0.754g)で分散させた。分散液に、BYK(0.754g)を添加した。マロン酸(1.51g)を分散液に添加し、続いてテルピネオール(2.64g)を添加した。次いで、混合物を高速軌道混合物に入れ、3ロールミルで数分間粉砕して均質なペーストを得た。
上記合成されたナノ銅粉末(15g)を、高速軌道ミキサーを用いてエポキシメタクリレートウレタン(0.754g)で分散させた。分散液に、BYK(0.754g)を添加した。マロン酸(1.51g)を分散液に添加し、続いてギ酸(1.511g)及びテルピネオール(2.64g)を添加した。次いで、混合物を高速軌道混合物に入れ、3ロールミルで数分間粉砕して均質なペーストを得た。
銅ペーストは、テープキャスターの補助のもと、ポリエチレンテレフタレート(PET)フィルムにキャスティングした。フィルムの厚さを75μmに設定した。銅ペーストを100℃でテープキャスターに通した。フィルムのキャスティング時間は約25分であった。キャストされたフィルムの厚さは、約50〜60μmであった。
Dataconダイボンダーを使用して、ダイのフィルム転写プロセス(DTF)を実施した。3mmの×3mmの金でコーティングされたシリコンダイのスタンピング条件は、以下の表1の通りであった。
Carverプレスの圧盤の両方を175℃に維持した。シリコンウェハの積層は、5〜10MPaの圧力を使用することによって行われた。積層のクッション効果として、シリコンゴムを使用した。積層の滞留時間は、約3分である。フィルムのスタンプされた部分は、PETシート上にフィルムが残っていないことを示した。次いで、積層ウェハをUVテープに取り付け、ダイシング機を使用してダイシングした。
Carverプレスを使用して、自立型銅フィルムを作製した。キャストされたフィルムを、200℃で5〜10MPaの圧力でシリコンウェハ上に押し付けた。滞留時間は約2分であった。銅フィルムはシリコンウェハの形状をとり、シリコン内に拡散しなかった。これは次に、ポリマー基材からのフィルムの分離に至り、厚さ約30〜40μmの自立型フィルムをもたらす。9Vの電池がフィルム全体に接続されたときのナノ銅フィルムの導電性により、LEDが光を放った。フィルムの電気抵抗率は、2×10−8Ωmであることが判明した。
半導体又は他のダイ要素の取り付けは、直接結合銅(DBC)、直接板銅(DPC)、金属コアプリント回路基板(MCPCB)、FR4、銅リードフレーム、可撓性PCBなどの基材上にナノ銅ペーストを印刷し、続いて印刷された基材を60℃で20分間加熱することによって印刷領域を乾燥させることによって、達成することができる。次いで、このプロセスに、ダイボンダー又はピックアンドプレース機を介してダイの配置、及び圧力焼結を使用してCarverプレスで焼結することが続く。
ナノ銅ペーストを、セラミック、FR4及びPETで接着について試験した。ペーストを、DEKプリンタを使用して様々な基材に印刷し、次いで、ボックスオーブン内、窒素下で、1700℃で30分間硬化させた。次いで、典型的な引っ掻き接着テープ試験の方法によって印刷物を試験した。セラミックとFR4との接着性は5Bに分類され、一方PETに対する接着性は4Bに分類された。
合成されたナノ銅ペーストはまた、被スクリーン印刷の能力を有する。ペーストをメッシュスのクリーンでスクリーン印刷した。設計パターンは、DEKプリンタにおいて70のメッシュサイズのスクリーンを使用して作製した。
Claims (46)
- 銅粒子を含む焼結粉末であって、
前記粒子は、キャッピング剤で少なくとも部分的にコーティングされ、
前記粒子は、100nm以上のD10及び2000nm以下のD90を呈する、焼結粉末。 - ダイアタッチのための、請求項1に記載の焼結粉末。
- 前記キャッピング剤が、トリエタノールアミンを含む、請求項1又は2に記載の焼結粉末。
- 最大1重量%のキャッピング剤、好ましくは0.1〜0.5重量%のキャッピング剤、より好ましくは0.2〜0.4重量%のキャッピング剤を含む、請求項1〜3のいずれか一項に記載の焼結粉末。
- 前記粒子が、1000nm以下、好ましくは500nm以下、より好ましくは450nm以下のD90を示す、請求項1〜4のいずれか一項に記載の焼結粉末。
- 前記粒子が、125nm以上のD10及び450nm以下のD90を示す、請求項1〜5のいずれか一項に記載の焼結粉末。
- 前記粒子が、150nm以上のD10及び400nm以下のD90を示す、請求項1〜6のいずれか一項に記載の焼結粉末。
- 粉末成形体の形態である、請求項1〜7のいずれか一項に記載の焼結粉末。
- 請求項1〜8のいずれか一項に記載の焼結粉末を含む、焼結ペースト。
- 前記ペーストが、70〜90重量%の前記焼結粉末を含む、請求項9に記載の焼結ペースト。
- 前記ペーストが、1〜5重量%の結合剤を含む、請求項9又は10に記載の焼結ペースト。
- 前記結合剤がエポキシメタクリレートウレタンを含む、請求項9〜11のいずれか一項に記載の焼結ペースト。
- 前記ペーストが、0.5〜3重量%、好ましくは1〜3重量%の活性剤を含む、請求項9〜12のいずれか一項に記載の焼結ペースト。
- 前記活性剤がジカルボン酸を含む、請求項13に記載の焼結ペースト。
- 前記ジカルボン酸が、マロン酸を含む、請求項14に記載の焼結ペースト。
- 前記ペーストが、0.5〜2重量%の分散剤を含む、請求項9〜15のいずれか一項に記載の焼結ペースト。
- 前記分散剤が界面活性剤を含む、請求項16に記載の焼結ペースト。
- 前記ペーストが、10〜15重量%の有機溶媒を含む、請求項9〜17のいずれか一項に記載の焼結ペースト。
- 前記有機溶媒が、テルピネオールを含む、請求項18に記載の焼結ペースト。
- 前記ペーストが、
70〜90重量%の前記焼結粉末と、
1〜3重量%の活性剤と、
0.5〜2重量%の分散剤と、
10〜15重量%の有機溶媒と、
任意に、1〜5重量%の結合剤を含む、請求項9〜19のいずれか一項に記載の焼結ペースト。 - 前記ペーストが、印刷可能及び/又は分配可能及び/又はジェット可能及び/又はピン転写可能及び/又はスクリーン印刷可能である、請求項9〜20のいずれか一項に記載の焼結ペースト。
- 請求項9〜21のいずれか一項に記載の焼結ペーストを含む、焼結フィルム。
- 前記フィルムがウェハに予め適用される、請求項22に記載の焼結フィルム。
- 前記フィルムがポリマー基材上にある、請求項22に記載の焼結フィルム。
- 前記フィルムが自立型である、請求項22に記載の焼結フィルム。
- 焼結粉末、好ましくは、請求項1〜8のいずれか一項に記載の焼結粉末の製造方法であって、
銅イオン及びキャッピング剤を含む溶液を提供する工程と、
前記溶液を還元剤と接触させて、前記焼結粉末を提供する工程と、
前記焼結粉末を回収する工程と、を含む、方法。 - 前記溶液中の銅イオン:キャッピング剤のモル比が、1:1〜10:1、好ましくは2:1〜7:1、より好ましくは4:1〜6:1である、請求項26に記載の方法。
- 前記溶液中の前記銅イオンが銅塩の形態で提供され、前記銅塩が、酢酸銅を含む、請求項26又は27に記載の方法。
- 前記キャッピング剤がトリエタノールアミンを含む、請求項26〜28のいずれか一項に記載の方法。
- 前記溶液が7を超えるpHを有する、請求項26〜29のいずれか一項に記載の方法。
- 還元剤対銅イオンのモル比が1:1を超える、請求項26〜30のいずれか一項に記載の方法。
- 前記還元剤がヒドラジンを含む、請求項26〜31のいずれか一項に記載の方法。
- 銅イオン及びキャッピング剤を含む前記溶液が、5〜30時間、好ましくは10〜20時間、前記還元剤と接触させる、請求項26〜32のいずれか一項に記載の方法。
- 回収する工程が、前記焼結粉末から前記得られる溶液をデカントすること、前記焼結粉末を洗浄し、前記焼結粉末を乾燥させることのうちの1つ以上を含む、請求項26〜33のいずれか一項に記載の方法。
- 前記方法が、非不活性雰囲気、好ましくは空気中で実施される、請求項26〜34のいずれか一項に記載の方法。
- 請求項9〜21のいずれか一項に記載の焼結ペーストの製造方法であって、
請求項1〜8のいずれか一項に記載の焼結粉末を提供する工程と、
前記焼結粉末を有機溶媒及び任意に活性剤、分散剤、キャッピング剤及び結合剤のうちの1つ以上を混合する工程と、を含む、方法。 - 前記焼結ペーストを粉砕することを更に含む、請求項36に記載の方法。
- 前記焼結ペーストをフィルムにキャスティングすることを更に含む、請求項36又は37に記載の方法。
- 2つ以上の作業片間の接合部を形成する方法であって、
接合される2つ以上の作業片を提供する工程と、
請求項1〜8のいずれか一項に記載の焼結粉末、及び/又は請求項9〜21のいずれか一項に記載の焼結ペースト、及び/又は請求項22〜25のいずれか一項に記載の焼結フィルムを前記2つ以上の作業片の近傍にて提供する工程と、
前記焼結粉末及び/又は焼結ペースト及び/又は焼結フィルムを乾燥させる工程と、
前記焼結粉末及び/又は焼結ペースト及び/又は焼結フィルムを加熱して、前記金属を少なくとも部分的に焼結する工程と、を含む、方法。 - 前記2つ以上の作業片がダイ及び基材を含む、請求項39に記載の方法。
- 前記乾燥が、30〜100℃、好ましくは40〜80℃、より好ましくは50〜70℃の温度で実施される、請求項39又は40に記載の方法。
- 前記乾燥が、1〜60分、好ましくは5〜40分、より好ましくは10〜30分間実行される、請求項41に記載の方法。
- 前記加熱工程中に2〜18MPaの圧力、好ましくは3〜15MPa、より好ましくは5〜13MPa、更により好ましくは8〜12MPaが適用される、請求項39〜42のいずれか一項に記載の方法。
- 前記焼結ペーストが、接合される前記作業片のうちの1つ以上の上にスクリーン印刷されて、スクリーン印刷パターンを形成し、
前記スクリーン印刷パターンにはんだが適用され、
任意に、前記スクリーン印刷パターンは、前記はんだが適用される前に無電解ニッケル浸漬金(ENIG)技術によってコーティングされる、請求項39〜43のいずれか一項に記載の方法。 - 請求項1〜8のいずれか一項に記載の焼結粉末、及び/又は請求項9〜21のいずれか一項に記載の焼結ペースト、及び/又は請求項22〜25のいずれか一項に記載のフィルムの使用であって、ダイ取り付け、ウェハ−ウェハ結合、気密及び近密封封止、焼結粉末を含む焼結フィルム、及びバッキング層上のフィルムに形成された結合剤、分配、及び相互接続線の製造から選択される方法における使用。
- 請求項1〜8のいずれか一項に記載の焼結粉末、及び/又は請求項9〜21のいずれか一項に記載の焼結ペースト、及び/又は請求項22〜25のいずれか一項に記載の焼結フィルムを使用して形成される焼結接合部。
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CN112399896B (zh) | 2023-06-09 |
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KR20210034578A (ko) | 2021-03-30 |
TW202012070A (zh) | 2020-04-01 |
KR102486410B1 (ko) | 2023-01-09 |
CN112399896A (zh) | 2021-02-23 |
JP7110410B2 (ja) | 2022-08-01 |
EP3814035A1 (en) | 2021-05-05 |
TWI808208B (zh) | 2023-07-11 |
US20240282742A1 (en) | 2024-08-22 |
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