WO2016052392A1 - Ag下地層付パワーモジュール用基板及びパワーモジュール - Google Patents
Ag下地層付パワーモジュール用基板及びパワーモジュール Download PDFInfo
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- WO2016052392A1 WO2016052392A1 PCT/JP2015/077290 JP2015077290W WO2016052392A1 WO 2016052392 A1 WO2016052392 A1 WO 2016052392A1 JP 2015077290 W JP2015077290 W JP 2015077290W WO 2016052392 A1 WO2016052392 A1 WO 2016052392A1
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- Prior art keywords
- layer
- underlayer
- glass
- power module
- substrate
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Definitions
- the present invention relates to a power module substrate with an Ag underlayer in which a circuit layer is formed on one surface of an insulating layer, and a power module using the same.
- a semiconductor device such as an LED or a power module has a structure in which a semiconductor element is bonded on a circuit layer made of a conductive material.
- a power semiconductor element for high power control used to control wind power generation, electric vehicles, hybrid vehicles, and the like generates a large amount of heat. Therefore, as a substrate on which such a power semiconductor element is mounted, for example, an insulating layer made of a ceramic substrate such as AlN (aluminum nitride) or Al 2 O 3 (alumina), and a conductive layer on one surface of this insulating layer.
- a power module substrate including a circuit layer formed by disposing an excellent metal has been widely used. In such a power module substrate, a semiconductor element as a power element is mounted on the circuit layer via a solder material (see, for example, Patent Document 1).
- the metal constituting the circuit layer aluminum or an aluminum alloy, or copper or a copper alloy is generally used.
- a circuit layer made of aluminum or an aluminum alloy since a natural oxide film of aluminum is formed on the surface, it is difficult to perform good bonding with a semiconductor element using a solder material.
- a circuit layer made of copper or a copper alloy there is a possibility that the molten solder material reacts with copper and the components of the solder material enter the inside of the circuit layer to deteriorate the characteristics of the circuit layer. For this reason, conventionally, as shown in Patent Document 1, a Ni plating film is formed on the surface of a circuit layer, and then a semiconductor element is implemented by a solder material.
- Patent Document 2 proposes a technique for joining semiconductor elements using Ag nanopaste.
- Patent Documents 3 and 4 propose techniques for joining semiconductor elements using an oxide paste containing metal oxide particles and a reducing agent made of an organic substance.
- Patent Document 2 when a semiconductor element is bonded using an Ag nano paste without using a solder material, the bonding layer made of the Ag nano paste has a thickness larger than that of the solder material. Since it is formed thin, the stress at the time of thermal cycle load tends to act on the semiconductor element, and the semiconductor element itself may be damaged.
- Patent Documents 3 and 4 when a semiconductor element is bonded using a metal oxide and a reducing agent, the fired layer of the oxide paste is still formed thinly. The stress at the time of thermal cycle load tends to act on the semiconductor element, and the performance of the power module may be deteriorated.
- Patent Documents 5 to 7 after forming an Ag underlayer on a circuit layer made of aluminum or copper using a glass-containing Ag paste, the circuit layer and the semiconductor element are connected via a solder material or Ag paste.
- Techniques for joining have been proposed.
- a glass-containing Ag paste is applied to the surface of a circuit layer made of aluminum or copper and baked, thereby removing the oxide film formed on the surface of the circuit layer by reacting with glass to remove the Ag layer.
- a ground layer is formed, and a semiconductor element is bonded to the circuit layer on which the Ag underlayer is formed via a solder material.
- the Ag underlayer includes a glass layer formed by reacting glass with an oxide film of a circuit layer, and an Ag layer formed on the glass layer. Conductive particles are dispersed in the glass layer, and conduction of the glass layer is secured by the conductive particles.
- the glass content in the glass-containing Ag paste in order to improve the bonding reliability between the circuit layer and the Ag underlayer, it is effective to increase the glass content in the glass-containing Ag paste.
- the glass content in the glass-containing Ag paste when the glass content in the glass-containing Ag paste is increased, the glass layer becomes thicker in the Ag underlayer. Even when conductive particles are dispersed, the glass layer has a higher electrical resistance than an Ag layer or the like. For this reason, as the glass layer becomes thicker, the electrical resistance value of the Ag underlayer tends to increase, and it is difficult to balance both the bonding reliability and the electrical resistance value.
- An object of the present invention is to provide a power module substrate and a power module with an Ag underlayer reduced to a low level.
- a power module substrate with an Ag underlayer includes a circuit layer formed on one surface of an insulating layer, and the circuit.
- An Ag underlayer-provided power module substrate comprising an Ag underlayer formed in a layer, wherein the Ag underlayer is formed by laminating the glass layer on the circuit layer side and the glass layer.
- the Ag underlayer is composed of an Ag layer, and incident light is incident from a surface of the Ag layer opposite to the glass layer.
- a Raman spectrum obtained by Raman spectroscopy 3000 cm ⁇ 1 to 4000 cm ⁇ 1.
- the maximum value is set to I a strength at a wave number range, when the maximum value of the intensity at a wave number range of 550 cm -1 from 450 cm -1 was I B, is 1.1 or more I a / I B.
- the Ag underlayer whose Raman spectrum characteristics are within the above-described range is one in which the mobility of Ag ions in the Ag underlayer is increased.
- the resistance value can be greatly reduced. Therefore, it is possible to provide a power module substrate with an Ag underlayer in which the conductivity of the Ag underlayer is increased.
- the Ag underlayer has an electrical resistance value of 10 m ⁇ or less in the thickness direction.
- the electrical resistance value in the thickness direction of the Ag underlayer is 10 m ⁇ or less, the conductivity in the Ag underlayer is ensured, and the conduction loss is reduced by mounting the semiconductor element on the Ag underlayer.
- a power module can be obtained.
- the Ag underlayer is a fired body of glass-containing Ag paste. Thereby, it can comprise from a glass layer and the Ag layer laminated
- the surface on the opposite side of the Ag underlayer from the glass layer is a surface that has been subjected to conductivity enhancement treatment.
- the power module which is 1 aspect of this invention is equipped with the board
- the power module of this configuration even if the Ag underlayer has a glass layer, the electrical resistance value in the Ag underlayer can be greatly reduced. Therefore, it is possible to provide a power module that is excellent in bonding reliability and in which the circuit layer and the semiconductor element are securely bonded.
- the electrical resistance value in the Ag underlayer can be sufficiently reduced.
- a power module and a power module can be provided.
- FIG. 1 shows a power module 1 according to an embodiment of the present invention.
- the power module 1 includes a power module substrate 10 with an Ag underlayer, and a semiconductor element 3 bonded to one surface (the upper surface in FIG. 1) of the power module substrate 10 with an Ag underlayer via a bonding layer 2. And a heat sink 41 disposed on the other surface (lower side in FIG. 1) of the power module substrate 10 with an Ag underlayer.
- a power semiconductor element such as an IGBT or a light emitting element such as an LED can be used.
- a power module substrate 10 with an Ag underlayer includes a ceramic substrate 11 constituting an insulating layer, and a circuit layer 12 disposed on one surface (the upper surface in FIG. 2) of the ceramic substrate 11. And a metal layer 13 disposed on the other surface (lower surface in FIG. 2) of the ceramic substrate 11 and an Ag underlayer 30 formed on one surface of the circuit layer 12.
- the ceramic substrate 11 prevents electrical connection between the circuit layer 12 and the metal layer 13, and includes, for example, AlN (aluminum nitride), Si 3 N 4 (silicon nitride), Al 2 having high insulating properties.
- O 3 is composed of (alumina) or the like. In this embodiment, it is comprised with AlN (aluminum nitride) excellent in heat dissipation. Further, the thickness of the ceramic substrate 11 is set within a range of 0.2 to 1.5 mm, and in this embodiment is set to 0.635 mm.
- the circuit layer 12 is formed by joining a conductive metal plate 22 to one surface of the ceramic substrate 11.
- the circuit layer 12 is formed by joining an aluminum plate made of a rolled plate of aluminum (so-called 4N aluminum) having a purity of 99.99 mass% or more to the ceramic substrate 11.
- 4N aluminum a rolled plate of aluminum
- a circuit pattern is formed on the circuit layer 12, and one surface (the upper surface in FIG. 1) is a mounting surface on which the semiconductor element 3 is mounted.
- the thickness of the circuit layer 12 (metal plate 22) is set within a range of 0.2 mm to 3.0 mm, and is set to 0.6 mm in the present embodiment.
- the metal layer 13 is formed by bonding a metal plate 23 to the other surface of the ceramic substrate 11.
- the metal layer 13 is formed by joining an aluminum plate made of a rolled plate of aluminum (so-called 4N aluminum) having a purity of 99.99 mass% or more to the ceramic substrate 11.
- the thickness of the metal layer 13 (metal plate 23) is set within a range of 0.2 mm to 3.0 mm, and is set to 1.6 mm in the present embodiment.
- the Ag underlayer 30 is, for example, a fired body of a glass-containing Ag paste containing a glass component.
- the Ag underlayer 30 was formed on the glass layer 31 and the glass layer 31 formed on the circuit layer 12 side as shown in FIGS. 2 and 3 before the semiconductor element 3 is bonded. And an Ag layer 32.
- fine conductive particles 33 having a particle diameter of about several nanometers are dispersed.
- the conductive particles 33 are crystalline particles containing at least one of Ag and Al.
- the conductive particles 33 in the glass layer 31 are observed by using, for example, a transmission electron microscope (TEM). It is presumed that the conductive particles 33 are precipitated in the glass layer 31 during firing.
- TEM transmission electron microscope
- fine glass particles (not shown) having a particle size of about several nanometers are dispersed inside the Ag layer 32.
- the glass layer 31 and the Ag layer 32 are formed by moving the glass having softness and fluidity to the vicinity of the interface with the circuit layer 12 by the grain growth of Ag when the glass-containing Ag paste is sintered. It is considered to be.
- the circuit layer 12 is made of aluminum having a purity of 99.99 mass% or more, an aluminum oxide film 12A that is naturally generated in the atmosphere is formed on the surface of the circuit layer 12. .
- the aluminum oxide film 12A is removed, and the Ag underlayer 30 is directly formed on the circuit layer 12. That is, as shown in FIG. 3, the aluminum constituting the circuit layer 12 and the glass layer 31 are directly bonded.
- the aluminum oxide film 12A is removed by reacting with the glass in the glass-containing Ag paste.
- the oxide film dissolves in the glass as aluminum oxide. Some are precipitated as complex oxide crystals together with glass components such as Bi 2 O 3 and ZnO.
- the thickness to of the aluminum oxide film 12A that naturally occurs on the circuit layer 12 is 4 nm ⁇ to ⁇ 6 nm.
- the thickness tg of the glass layer 31 is 0.01 ⁇ m ⁇ tg ⁇ 5 ⁇ m
- the thickness ta of the Ag layer 32 before blasting described later is 1 ⁇ m ⁇ ta ⁇ 100 ⁇ m
- the total thickness t1 of the Ag underlayer 30 is 1. It is configured to satisfy 01 ⁇ m ⁇ t1 ⁇ 105 ⁇ m.
- the Ag underlayer 30 having such a configuration is obtained by Raman spectroscopy using incident Raman light (light source light) incident from a surface 30A opposite to the glass layer 31 of the Ag layer 32 using a Raman spectrometer.
- the maximum value of the intensity at a wave number range of 550 cm -1 from 450 cm -1 was I B, I a / I B is 1.1 or more.
- the I A / I B is preferably 1.2 or more, more preferably 1.5 or more.
- I A / I B is preferably as large as possible, but extremely increasing I A / I B causes an increase in cost. For this reason, I A / I B may be preferably 1.9 or less.
- the Ag underlayer 30 when incident light having a single wavelength is incident on the Ag underlayer 30, it collides with molecules constituting the Ag underlayer 30 and a part thereof is scattered. Most of the components of the scattered light are Rayleigh scattered light having the same wave number as the incident light, but a part thereof is Raman scattered light that is light having a wave number region different from that of the incident light. The energy gap between the incident light and the Raman scattered light reflects the molecular structure of the Ag underlayer 30.
- the specific wave number peak generated by the Raman spectrum of the Ag under layer 30 is generated by an oxide contained in the Ag under layer 30. It is thought that.
- the Raman spectrum changes according to the amount of Ag contained in the Ag underlayer 30. For example, in the range of wave number 3000 cm -1 ⁇ 4000 cm -1 around the wave number 3500 cm -1, the Raman spectrum is changed, the wave number peak occurs.
- the wave number peak in such a wave number region is Ag + due to ionization of Ag.
- wave number peak in the wave number range of 3000cm -1 ⁇ 4000cm -1 around the wave number 3500 cm -1 is associated with the mobility of the ions as a carrier, as the intensity of the wave peaks increases, Ag underlayer 30 It is shown that the conductivity of is improved.
- FIG. 9 shows a measurement example of a Raman spectrum obtained by Raman spectroscopy by using an Ag underlayer 30 containing 5 wt% of a glass component and making incident light incident from the surface 30 ⁇ / b> A of the Ag layer 32. According to the example of the measurement result shown in FIG. 9, a peak centered at a wave number of 3500 cm ⁇ 1 is observed.
- the surface (upper surface in FIG. 3) 30A of the Ag base layer 30 is a conductivity improving surface. That is, the conductivity of the Ag underlayer 30 is improved by performing a conductivity improving process on the surface of the Ag layer 32 opposite to the glass layer 31 to promote Ag ionization to Ag + . .
- I A / I B of the Raman spectrum obtained by the Raman spectroscopy described above can be set to 1.1 or more.
- the conductivity improving process is a blasting process. That is, in this embodiment, the conductivity improving surface is the blast surface 30A.
- the blast surface 30 ⁇ / b> A is formed by colliding blast abrasive grains against the Ag layer 32, and has concavo-convex shapes corresponding to the blast abrasive grains.
- the surface roughness Ra on the blast surface 30A is preferably 0.35 ⁇ m or more and 1.50 ⁇ m or less. If the surface roughness Ra is less than 0.35 ⁇ m, the blast treatment is insufficient and the electric resistance may not be lowered. When the surface roughness Ra exceeds 1.50 ⁇ m, the blast surface 30A becomes too rough, and there is a possibility that voids are generated when the semiconductor elements are joined by solder or the like and the thermal resistance is increased.
- the surface roughness Ra is more preferably 0.40 ⁇ m or more and 1.0 ⁇ m or less, but is not limited thereto.
- the pressure is applied to the Ag layer 32 by the blast process for forming the blast surface 30A, and the pores in the Ag layer 32 are crushed. Further, a portion where a part of the Ag layer 32 is in direct contact with the circuit layer 12 is formed.
- the conductivity improving process for example, Bi 2 O 3 —ZnO—B 2 O 3 is used as a glass component of the Ag underlayer 30.
- the cross-linked structure of B—O—B changes to a non-cross-linked structure B—O—
- Ag changes to Ag + .
- the electrical resistance value P in the thickness direction of the Ag underlayer 30 can be set to, for example, 10 m ⁇ or less by such conductivity improving treatment such as blasting.
- the electrical resistance value P in the thickness direction of the Ag underlayer 30 is preferably 5 m ⁇ or less, more preferably 1 m ⁇ or less, but is not limited thereto.
- the electrical resistance value P in the thickness direction of the Ag base layer 30 is preferably as small as possible. However, extremely reducing the electrical resistance value P causes an increase in cost. For this reason, the electrical resistance value P in the thickness direction of the Ag base layer 30 may be 0.4 m ⁇ or more.
- the electrical resistance value in the thickness direction of the Ag base layer 30 is the electrical resistance value between the upper surface of the Ag base layer 30 and the upper surface of the circuit layer 12. This is because the electrical resistance of 4N aluminum constituting the circuit layer 12 is very small compared to the electrical resistance in the thickness direction of the Ag base layer 30.
- the upper surface center point of the Ag underlayer 30 and the upper surface center point of the Ag underlayer 30 to the edge of the Ag underlayer 30 are shown. The electrical resistance between the point on the circuit layer 12 that is separated from the end of the Ag underlayer 30 by the same distance as the distance is measured.
- the joining layer 2 is provided between the semiconductor element 3 and the Ag base layer 30.
- An example of the bonding layer 2 is a solder layer.
- Examples of the solder material for forming the solder layer include Sn—Ag, Sn—In, and Sn—Ag—Cu.
- the heat sink 41 is for cooling the above-described power module substrate 10 with an Ag underlayer, and includes a flow path 42 for circulating a cooling medium (for example, cooling water).
- a cooling medium for example, cooling water
- the heat sink 41 is a multi-hole tube made of aluminum or an aluminum alloy.
- the metal layer 13 and the heat sink 41 are joined via a brazing material such as Al—Si.
- This glass-containing Ag paste contains Ag powder, glass powder, resin, solvent, and dispersant, and the content of the powder component composed of Ag powder and glass powder is the glass-containing Ag paste.
- the total content is 60% by mass or more and 90% by mass or less, and the remainder is a resin, a solvent, and a dispersant.
- content of the powder component which consists of Ag powder and glass powder is 85 mass% of the whole glass containing Ag paste.
- the viscosity of the glass-containing Ag paste is adjusted to 10 Pa ⁇ s or more and 500 Pa ⁇ s or less, more preferably 50 Pa ⁇ s or more and 300 Pa ⁇ s or less.
- the Ag powder has a particle size of 0.05 ⁇ m or more and 1.0 ⁇ m or less. In this embodiment, an Ag powder having an average particle size of 0.8 ⁇ m was used.
- the glass powder contains, for example, any one or more of lead oxide, zinc oxide, silicon oxide, boron oxide, phosphorus oxide and bismuth oxide, and the softening temperature is 600 ° C. or less. In the present embodiment, glass powder made of lead oxide, zinc oxide and boron oxide and having an average particle size of 0.5 ⁇ m was used.
- a solvent having a boiling point of 200 ° C. or more is suitable, and diethylene glycol dibutyl ether is used in this embodiment.
- the resin is used to adjust the viscosity of the glass-containing Ag paste, and those that decompose at 500 ° C. or higher are suitable.
- ethyl cellulose is used.
- a dicarboxylic acid-based dispersant is added.
- you may comprise a glass containing Ag paste, without adding a dispersing agent.
- This glass-containing Ag paste is prepared by premixing a mixed powder obtained by mixing Ag powder and glass powder and an organic mixture obtained by mixing a solvent and a resin together with a dispersing agent using a mixer, and then using the roll mill machine. After mixing while kneading, the resulting kneaded product is produced by filtering with a paste filter.
- a metal plate 22 to be the circuit layer 12 and a metal plate 23 to be the metal layer 13 are prepared, and these metal plates 22 and 23 are respectively placed on one surface and the other surface of the ceramic substrate 11 with a brazing material 26 interposed therebetween. Then, the metal plates 22 and 23 and the ceramic substrate 11 are joined by cooling after pressurizing and heating (circuit layer and metal layer forming step S01). In this circuit layer and metal layer forming step S01, an Al-7.5 mass% Si brazing foil was used as the brazing material 26, and the brazing temperature was set to 640 ° C. to 650 ° C.
- an Ag underlayer 30 is formed on one surface of the circuit layer 12 (Ag underlayer formation step S02).
- a glass-containing Ag paste is applied to one surface of the circuit layer 12 (application step S21).
- various means such as a screen printing method, an offset printing method, and a photosensitive process, are employable.
- the glass-containing Ag paste was formed in a pattern by a screen printing method.
- the glass-containing Ag paste is fired by being placed in a heating furnace (firing step S22).
- the firing temperature at this time is set to 350 ° C. to 645 ° C., for example.
- the Ag base layer 30 including the glass layer 31 and the Ag layer 32 is formed.
- the aluminum oxide film 12A naturally generated on the surface of the circuit layer 12 is melted and removed by the glass layer 31, and the glass layer 31 is directly formed on the circuit layer 12.
- fine conductive particles 33 having a particle size of about several nanometers are dispersed inside the glass layer 31.
- the conductive particles 33 are crystalline particles containing at least one of Ag or Al, and are presumed to have precipitated in the glass layer 31 during firing.
- blast process step S23 the surface of the Ag base layer 30 (Ag layer 32) opposite to the circuit layer 12 is subjected to a conductivity improving process, for example, a blast process to obtain a blast surface 30A (blast process step S23).
- a blast process to obtain a blast surface 30A
- glass particles such as silica having a new Mohs hardness of 2 to 7, ceramic particles, metal particles, resin beads or the like can be used as blast particles.
- glass particles are used.
- the particle size of a blast grain shall be in the range of 20 micrometers or more and 150 micrometers or less.
- the blast pressure is in the range of 0.05 MPa to 0.8 MPa
- the processing time is in the range of 1 second to 10 seconds.
- the power module substrate 10 with the Ag underlayer according to the present embodiment is manufactured.
- a heat sink 41 is laminated on the other surface side of the metal layer 13 via a brazing material, and the heat sink 41 and the metal layer 13 are joined by cooling after pressurization / heating (heat sink joining step S03).
- heat sink joining step S03 an Al-10 mass% Si brazing foil was used as the brazing material, and the brazing temperature was set to 590 ° C. to 610 ° C.
- a semiconductor element 3 such as a power semiconductor element such as an IGBT or a light emitting element such as an LED is placed on the blast surface 30A of the Ag base layer 30 via a solder material, and solder-bonded in a reduction furnace (semiconductor element bonding) Step S04).
- a reduction furnace semiconductor element bonding
- the glass layer 31 and the glass layer 31 are laminated on one surface of the circuit layer 12.
- An Ag underlayer 30 composed of the Ag layer 32 is formed, and the surface of the Ag underlayer 30 opposite to the circuit layer 12 is subjected to conductivity improvement processing, for example, blasting to form a blast surface 30A. Therefore, the ionization of Ag is promoted to become Ag + , and the conductivity of the Ag underlayer 30 is improved.
- the Ag underlayer 30 that has been subjected to the conductivity enhancement treatment is incident with incident light (light source light) from a surface 30A opposite to the glass layer 31 of the Ag layer 32, and has a Raman spectrum of 3000 cm obtained by Raman spectroscopy.
- incident light light source light
- the maximum value of the intensity at a wave number range of 4000 cm -1 from -1 and I a when the maximum value of the intensity at a wave number range of 550 cm -1 from 450 cm -1 was I B, I a / I B is 1.1
- I B I a / I B
- the blast treatment step S03 for forming the blast surface 30A pressure can be applied to the Ag layer 32, the pores inside the Ag layer 32 are crushed, and the circuit layer 12 and part of the Ag layer 32 are formed. A direct contact portion is formed, and the electrical resistance value in the Ag underlayer 30 can be greatly reduced.
- the glass particles having a new Mohs hardness in the range of 2 or more and 7 or less are used as the blasting abrasive grains in the blasting process S03, the Ag layer 32 is removed by the blasting process. Therefore, the pressure can be reliably applied to the Ag layer 32, and the electrical resistance value in the Ag underlayer 30 can be greatly reduced.
- the electrical resistance value in the thickness direction of the Ag underlayer 30 is 10 m ⁇ or less, the conductivity of the Ag underlayer 30 is ensured, and the semiconductor element 3 is connected to the Ag underlayer 30 via the bonding layer 2.
- the surface 30A opposite to the glass layer 31 of the Ag layer 32 is subjected to blasting as a conductivity improving process, but besides the blasting, Ag ionization of the Ag underlayer 30 is performed. Any treatment may be used as long as it is promoted to improve conductivity, and is not limited to a specific treatment method.
- the metal plate constituting the circuit layer and the metal layer has been described as a rolled plate of pure aluminum (4N aluminum) having a purity of 99.99 mass%, but is not limited thereto. You may be comprised with the other aluminum or aluminum alloy. Moreover, you may comprise the metal plate which comprises a circuit layer and a metal layer with copper or a copper alloy. Furthermore, a structure in which a copper plate and an aluminum plate are joined by solid phase diffusion bonding may be employed.
- a ceramic substrate made of AlN as an insulating layer, is not limited thereto, it may be used a ceramic substrate made of Si 3 N 4 or Al 2 O 3, or the like, insulating The insulating layer may be made of resin.
- a silver oxide paste, the paste containing silver particle, Ag powder A semiconductor element may be bonded onto the Ag underlayer using a conductive adhesive containing bismuth. In this case, since Ag is bonded to each other, the bonding reliability between the semiconductor element and the Ag underlayer can be improved.
- a silver oxide paste what contains silver oxide powder, a reducing agent, resin, a solvent, and an organometallic compound powder can be used.
- the content of the silver oxide powder is 60% by mass or more and 80% by mass or less of the entire silver oxide paste, and the content of the reducing agent is 5% by mass or more and 15% by mass or less of the entire silver oxide paste.
- the content is preferably 0% by mass or more and 10% by mass or less of the entire silver oxide paste, and the remainder is preferably a solvent.
- the heat sink is not limited to those exemplified in the present embodiment, and the structure of the heat sink is not particularly limited.
- a buffer layer may be provided between the heat sink and the metal layer.
- a plate made of aluminum, an aluminum alloy, or a composite material containing aluminum (for example, AlSiC) can be used.
- a metal plate was joined to one surface of the ceramic substrate to form a circuit layer.
- the ceramic substrate was AlN, and the size was 27 mm ⁇ 17 mm ⁇ 0.6 mm.
- the metal plate used as the circuit layer was made of the material shown in Table 1, and the size was 25 mm ⁇ 15 mm ⁇ 0.3 mm.
- an Al—Si brazing material was used as the bonding material.
- an active metal brazing material (Ag—Cu—Ti brazing material) was used as the bonding material.
- An Ag underlayer was formed by applying the glass-containing Ag paste described in the embodiment to the surface of the circuit layer and heat-treating it.
- the glass powder of the glass-containing Ag paste a Bi 2 O 3 90.6 wt%, the ZnO 2.6 wt%, the B 2 O 3 6.8 wt%, with lead-free glass powder containing.
- ethyl cellulose was used as the resin, and diethylene glycol dibutyl ether was used as the solvent.
- a dicarboxylic acid-based dispersant was added.
- the weight ratio A / G between the weight A of the Ag powder and the weight G of the glass powder in the glass-containing Ag paste and the coating amount were adjusted, and the thicknesses of the glass layer and the Ag layer were adjusted as shown in Table 1. It was adjusted.
- FIG. 8A shows an Ag underlayer before blasting
- FIG. 8B shows an Ag underlayer blasted under the conditions of Example 7 of the present invention
- FIG. 8C shows the conditions of Example 1 of the present invention. It is an Ag underlayer subjected to blasting. In Comparative Example 1-3, blasting was not performed.
- a tester manufactured by KEITHLEY: 2010 MULTITIMETER was used by the method described in FIGS.
- the electrical resistance value in the thickness direction of the Ag underlayer was measured.
- the electrical resistance is measured on a circuit layer that is separated from the Ag base layer edge by H when the upper surface center point of the Ag base layer is a distance H from the top center point of the Ag base layer to the Ag base layer edge. And went between.
- the surface roughness Ra of the Ag underlayer surface (blast surface) after the blasting treatment was measured.
- the measurement was performed using a laser microscope VK-X200 (manufactured by KEYENCE, and VK-Analyzer provided with the apparatus), the objective lens magnification was 20 times, three fields of view were measured, and the average value was defined as the surface roughness Ra.
- the surface roughness Ra was not measured.
- Example 1-12 in which the blast surface was formed by blasting the Ag underlayer, the electrical resistance value was lower than that of Comparative Example 1-3 having the same thickness of glass layer and Ag layer. It was.
- the maximum value of the intensity at a wave number range of 4000 cm -1 from 3000 cm -1 of the Raman spectrum and I A the maximum value of the intensity at a wave number range of 550 cm -1 from 450 cm -1 and I B I A / I B was 1.1 or more.
- I A / I B was less than 1.0. From the above, according to the present invention, it was confirmed that an Ag underlayer-provided power module substrate having an Ag underlayer with low electrical resistance can be provided.
- the power module of the present invention even if the Ag underlayer has a glass layer, the electrical resistance value in the Ag underlayer can be greatly reduced. Therefore, the power module of the present invention is suitable for a power semiconductor element for high power control used for controlling wind power generation, electric vehicles, hybrid vehicles and the like.
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Abstract
Description
本願は、2014年9月30日に、日本に出願された特願2014-200878号、及び2015年9月18日に、日本に出願された特願2015-185296号に基づき優先権を主張し、その内容をここに援用する。
風力発電、電気自動車、ハイブリッド自動車等を制御するために用いられる大電力制御用のパワー半導体素子は、発熱量が多い。そのため、このようなパワー半導体素子を搭載する基板としては、例えばAlN(窒化アルミニウム)、Al2O3(アルミナ)などのセラミックス基板からなる絶縁層と、この絶縁層の一方の面に導電性の優れた金属を配設して形成した回路層と、を備えたパワーモジュール用基板が、従来から広く用いられている。
そして、このようなパワーモジュール用基板は、その回路層上に、はんだ材を介してパワー素子としての半導体素子が搭載される(例えば、特許文献1参照)。
ここで、アルミニウム又はアルミニウム合金からなる回路層においては、表面にアルミニウムの自然酸化膜が形成されるため、はんだ材による半導体素子との接合を良好に行うことが困難であった。
また、銅又は銅合金からなる回路層においては、溶融したはんだ材と銅とが反応して回路層の内部にはんだ材の成分が侵入し、回路層の特性が劣化するおそれがあった。
このため、従来は、特許文献1に示すように、回路層の表面にNiめっき膜を形成した上で、はんだ材によって半導体素子を実施していた。
また、特許文献3、4には、金属酸化物粒子と有機物からなる還元剤とを含む酸化物ペーストを用いて半導体素子を接合する技術が提案されている。
また、特許文献3、4に開示されているように、金属酸化物と還元剤とを用いて半導体素子を接合した場合にも、やはり、酸化物ペーストの焼成層が薄く形成されることから、熱サイクル負荷時の応力が半導体素子に作用しやすくなり、パワーモジュールの性能が劣化するおそれがあった。
しかしながら、ガラス含有Agペースト中のガラス含有量を増加すると、Ag下地層においてガラス層が厚くなる。ガラス層は、導電性粒子が分散されていても、Ag層などと比較すると電気抵抗が高い。このため、ガラス層が厚くなるに従って、Ag下地層の電気抵抗値も大きくなる傾向にあり、接合信頼性と電気抵抗値との両方をバランスさせることが難しかった。このようにAg下地層の電気抵抗値が高いと、Ag下地層が形成された回路層と半導体素子とをはんだ材等を介して接合した際に、回路層と半導体素子等の電子部品との間の導電性を確保できなくなるおそれがあった。
この場合、Ag下地層の厚さ方向における電気抵抗値が10mΩ以下であることから、このAg下地層における導電性が確保され、Ag下地層上に半導体素子を搭載することにより、通電損失の少ないパワーモジュールを得ることができる。
これにより、ガラス層と、このガラス層に積層形成されたAg層とから構成することができ、Ag層によってガラス層の導電性を高めることができる。
これにより、Ag下地層の導電性が高められ、電気抵抗値を大幅に低減したAg下地層付パワーモジュール用基板を実現できる。
図1に、本発明の実施形態であるパワーモジュール1を示す。このパワーモジュール1は、Ag下地層付パワーモジュール用基板10と、このAg下地層付パワーモジュール用基板10の一方の面(図1において上面)に接合層2を介して接合された半導体素子3と、Ag下地層付パワーモジュール用基板10の他方の面(図1において下側)に配置されたヒートシンク41と、を備えている。半導体素子3としては、IGBT等のパワー半導体素子やLED等の発光素子を用いることができる。
ガラス層31内部には、粒径が数ナノメートル程度の微細な導電性粒子33が分散されている。この導電性粒子33は、Ag又はAlの少なくとも一方を含有する結晶性粒子とされている。なお、ガラス層31内の導電性粒子33は、例えば透過型電子顕微鏡(TEM)を用いることで観察される。導電性粒子33は、焼成の際にガラス層31内部に析出したものと推測される。
また、Ag層32の内部には、粒径が数ナノメートル程度の微細なガラス粒子(図示略)が分散されている。
なお、ガラス層31及びAg層32は、ガラス含有Agペーストが焼結する際、軟化し流動性を持ったガラスが、Agの粒成長により回路層12との界面近傍に移動させられることにより形成すると考えられている。
このガラス含有Agペーストは、Ag粉末と、ガラス粉末と、樹脂と、溶剤と、分散剤と、を含有しており、Ag粉末とガラス粉末とからなる粉末成分の含有量が、ガラス含有Agペースト全体の60質量%以上90質量%以下とされており、残部が樹脂、溶剤、分散剤とされている。
また、このガラス含有Agペーストは、その粘度が10Pa・s以上500Pa・s以下、より好ましくは50Pa・s以上300Pa・s以下に調整されている。
ガラス粉末は、例えば、酸化鉛、酸化亜鉛、酸化ケイ素、酸化ホウ素、酸化リン及び酸化ビスマスのいずれか1種又は2種以上を含有しており、その軟化温度が600℃以下とされている。本実施形態では、酸化鉛と酸化亜鉛と酸化ホウ素とからなり、平均粒径が0.5μmのガラス粉末を使用した。
また、Ag粉末の重量Aとガラス粉末の重量Gとの重量比A/Gは、80/20から99/1の範囲内に調整されており、本実施形態では、A/G=80/5とした。
樹脂は、ガラス含有Agペーストの粘度を調整するものであり、500℃以上で分解されるものが適している。本実施形態では、エチルセルロースを用いている。
また、本実施形態では、ジカルボン酸系の分散剤を添加している。なお、分散剤を添加することなくガラス含有Agペーストを構成してもよい。
まず、回路層12となる金属板22及び金属層13となる金属板23を準備し、これらの金属板22、23を、セラミックス基板11の一方の面及び他方の面にそれぞれろう材26を介して積層し、加圧・加熱後冷却することによって、金属板22、23とセラミックス基板11とを接合する(回路層及び金属層形成工程S01)。
なお、この回路層及び金属層形成工程S01においては、ろう材26として、Al-7.5mass%Siろう材箔を用いて、ろう付け温度を640℃~650℃に設定した。
このAg下地層形成工程S02においては、まず、回路層12の一方の面に、ガラス含有Agペーストを塗布する(塗布工程S21)。なお、ガラス含有Agペーストを塗布する際には、スクリーン印刷法、オフセット印刷法、感光性プロセス等の種々の手段を採用することができる。本実施形態では、スクリーン印刷法によってガラス含有Agペーストをパターン状に形成した。
この焼成工程S22により、ガラス層31とAg層32とを備えたAg下地層30が形成される。このとき、ガラス層31によって、回路層12の表面に自然発生していたアルミニウム酸化被膜12Aが溶融除去されることになり、回路層12に直接ガラス層31が形成される。また、ガラス層31の内部に、粒径が数ナノメートル程度の微細な導電性粒子33が分散される。この導電性粒子33は、Ag又はAlの少なくとも一方を含有する結晶性粒子とされており、焼成の際にガラス層31内部に析出したものと推測される。
このブラスト処理工程S23においては、ブラスト粒として新モース硬度2~7のシリカ等のガラス粒子、セラミック粒子、金属粒子、あるいは樹脂製ビーズ等を用いることができる。本実施形態では、ガラス粒子を用いている。また、ブラスト粒の粒径は、20μm以上150μm以下の範囲内とされている。
また、ブラスト圧力は、0.05MPa以上0.8MPa以下の範囲内、加工時間を1秒以上10秒以下の範囲内としている。
なお、このヒートシンク接合工程S03においては、ろう材として、Al-10mass%Siろう材箔を用いて、ろう付け温度を590℃~610℃に設定した。
このとき、はんだ材によって形成される接合層2には、Ag下地層30を構成するAg層32の一部又は全部が溶融する。
これにより、接合層2を介して半導体素子3が回路層12上に接合されたパワーモジュール1が製出される。
例えば、本実施形態では、Ag層32のガラス層31とは反対側の面30Aに導電性向上処理としてブラスト処理を行っているが、ブラスト処理以外にも、Ag下地層30のAgのイオン化を促進させて導電性を向上させる処理であればよく、特定の処理方法に限定されるものでは無い。
さらに、回路層及び金属層を構成する金属板を銅又は銅合金で構成した場合には、銅又は銅合金からなる金属板をセラミックス基板に接合する際に、直接接合法(DBC法)、活性金属ろう付け法、鋳造法等を適用することができる。
さらに、ヒートシンクと金属層との間に、緩衝層を設けても良い。緩衝層としては、アルミニウム又はアルミニウム合金若しくはアルミニウムを含む複合材(例えばAlSiC等)からなる板材を用いることができる。
なお、金属板がアルミニウム板の場合には、接合材としてAl-Si系ろう材を用いた。また、金属板が銅板の場合には、接合材として活性金属ろう材(Ag-Cu-Tiろう材)を用いた。
なお、ガラス含有Agペーストのガラス粉末として、Bi2O3を90.6質量%、ZnOを2.6質量%、B2O3を6.8質量%、を含む無鉛ガラス粉末を用いた。また、樹脂としてエチルセルロースを、溶剤としてジエチレングリコールジブチルエーテルを用いた。さらに、ジカルボン酸系の分散剤を添加した。
ここで、ガラス含有AgペーストにおけるAg粉末の重量Aとガラス粉末の重量Gとの重量比A/G、及び、塗布量を調整し、表1に示すようにガラス層とAg層の厚さを調整した。
なお、比較例1-3においては、ブラスト処理を実施しなかった。
以上の各評価結果を表1に示す。
本発明例1-12では、ラマンスペクトルの3000cm-1から4000cm-1の波数範囲における強度の最高値をIAとし、450cm-1から550cm-1の波数範囲における強度の最高値をIBとした時、IA/IBが1.1以上であった。一方、比較例1-3では、IA/IBが1.0未満であった。
以上のことから、本発明によれば、電気抵抗の低いAg下地層を備えたAg下地層付パワーモジュール用基板を提供可能であることが確認された。
10 Ag下地層付パワーモジュール用基板
11 セラミックス基板(絶縁層)
12 回路層
30 Ag下地層
30A ブラスト面(導電性向上処理面)
31 ガラス層
32 Ag層
Claims (5)
- 絶縁層の一方の面に形成された回路層と、前記回路層に形成されたAg下地層とを備えたAg下地層付パワーモジュール用基板であって、
前記Ag下地層は、前記回路層側に形成されたガラス層と、このガラス層に積層形成されたAg層とからなり、
前記Ag下地層は、前記Ag層の前記ガラス層とは反対側の面から入射光を入射させ、ラマン分光法によって得られたラマンスペクトルにおいて、3000cm-1から4000cm-1の波数範囲における強度の最高値をIAとし、450cm-1から550cm-1の波数範囲における強度の最高値をIBとした時、IA/IBが1.1以上であるAg下地層付パワーモジュール用基板。 - 前記Ag下地層は、その厚さ方向における電気抵抗値が10mΩ以下である請求項1に記載のAg下地層付パワーモジュール用基板。
- 前記Ag下地層は、ガラス含有Agペーストの焼成体である請求項1または2記載のAg下地層付パワーモジュール用基板。
- 前記Ag下地層のうち前記ガラス層とは反対側の面は、導電性向上処理が行われた面である請求項1ないし3いずれか一項記載のAg下地層付パワーモジュール用基板。
- 請求項1ないし4いずれか一項記載のAg下地層付パワーモジュール用基板と、半導体素子と、を備え、
前記半導体素子は、前記Ag下地層に対して接合層を介して接合されているパワーモジュール。
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