JP2014534620A5 - - Google Patents

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Publication number
JP2014534620A5
JP2014534620A5 JP2014533823A JP2014533823A JP2014534620A5 JP 2014534620 A5 JP2014534620 A5 JP 2014534620A5 JP 2014533823 A JP2014533823 A JP 2014533823A JP 2014533823 A JP2014533823 A JP 2014533823A JP 2014534620 A5 JP2014534620 A5 JP 2014534620A5
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JP
Japan
Prior art keywords
electrode
chuck
substrate
patterning device
dielectric member
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JP2014533823A
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English (en)
Japanese (ja)
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JP2014534620A (ja
JP6122856B2 (ja
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Priority claimed from PCT/EP2012/068386 external-priority patent/WO2013050243A1/en
Publication of JP2014534620A publication Critical patent/JP2014534620A/ja
Publication of JP2014534620A5 publication Critical patent/JP2014534620A5/ja
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Publication of JP6122856B2 publication Critical patent/JP6122856B2/ja
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JP2014533823A 2011-10-06 2012-09-19 チャック、リソグラフィ装置及びチャックを使用する方法 Active JP6122856B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201161544039P 2011-10-06 2011-10-06
US61/544,039 2011-10-06
PCT/EP2012/068386 WO2013050243A1 (en) 2011-10-06 2012-09-19 Chuck, lithography apparatus and method of using a chuck

Publications (3)

Publication Number Publication Date
JP2014534620A JP2014534620A (ja) 2014-12-18
JP2014534620A5 true JP2014534620A5 (enExample) 2015-11-05
JP6122856B2 JP6122856B2 (ja) 2017-04-26

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JP2014533823A Active JP6122856B2 (ja) 2011-10-06 2012-09-19 チャック、リソグラフィ装置及びチャックを使用する方法

Country Status (5)

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US (1) US9494875B2 (enExample)
EP (1) EP2764408B1 (enExample)
JP (1) JP6122856B2 (enExample)
TW (1) TWI571708B (enExample)
WO (1) WO2013050243A1 (enExample)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5973731B2 (ja) 2012-01-13 2016-08-23 東京エレクトロン株式会社 プラズマ処理装置及びヒータの温度制御方法
US9132436B2 (en) 2012-09-21 2015-09-15 Applied Materials, Inc. Chemical control features in wafer process equipment
US10256079B2 (en) 2013-02-08 2019-04-09 Applied Materials, Inc. Semiconductor processing systems having multiple plasma configurations
WO2015171207A1 (en) * 2014-05-09 2015-11-12 Applied Materials, Inc. Substrate carrier system and method for using the same
JP6378942B2 (ja) * 2014-06-12 2018-08-22 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6377975B2 (ja) * 2014-06-23 2018-08-22 新光電気工業株式会社 基板固定装置
US9966240B2 (en) 2014-10-14 2018-05-08 Applied Materials, Inc. Systems and methods for internal surface conditioning assessment in plasma processing equipment
US11637002B2 (en) 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
KR101910727B1 (ko) 2015-01-20 2018-10-22 엔지케이 인슐레이터 엘티디 웨이퍼 지지 구조체
US20160225652A1 (en) 2015-02-03 2016-08-04 Applied Materials, Inc. Low temperature chuck for plasma processing systems
WO2016148855A1 (en) * 2015-03-19 2016-09-22 Applied Materials, Inc. Method and apparatus for reducing radiation induced change in semiconductor structures
US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
KR102808134B1 (ko) * 2015-10-06 2025-05-14 에이에스엠엘 홀딩 엔.브이. 리소그래피 장치의 물체를 유지하는 척과 클램프 및 리소그래피 장치의 클램프에 의해 유지되는 물체의 온도를 제어하는 방법
DE102016101842A1 (de) 2016-02-03 2017-08-03 Helmut Fischer GmbH Institut für Elektronik und Messtechnik Vakuumspannvorrichtung zum Aufspannen von Werkstücken, Messvorrichtungen und Verfahren zum Prüfen von Werkstücken, insbesondere Wafern
KR102513443B1 (ko) * 2016-03-15 2023-03-24 삼성전자주식회사 정전 척 및 그를 포함하는 기판 처리 장치
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP7001715B2 (ja) * 2017-06-01 2022-01-20 エーエスエムエル ネザーランズ ビー．ブイ． パーティクル除去装置および関連システム
US10920320B2 (en) 2017-06-16 2021-02-16 Applied Materials, Inc. Plasma health determination in semiconductor substrate processing reactors
US10727080B2 (en) 2017-07-07 2020-07-28 Applied Materials, Inc. Tantalum-containing material removal
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
TWI626772B (zh) * 2017-11-13 2018-06-11 友達光電股份有限公司 轉置裝置
JP6899314B2 (ja) * 2017-11-17 2021-07-07 浜松ホトニクス株式会社 吸着方法
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10679870B2 (en) 2018-02-15 2020-06-09 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
JP7023744B2 (ja) * 2018-02-28 2022-02-22 キヤノン株式会社 インプリント方法及び製造方法
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10699879B2 (en) 2018-04-17 2020-06-30 Applied Materials, Inc. Two piece electrode assembly with gap for plasma control
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
US10872778B2 (en) 2018-07-06 2020-12-22 Applied Materials, Inc. Systems and methods utilizing solid-phase etchants
US10755941B2 (en) 2018-07-06 2020-08-25 Applied Materials, Inc. Self-limiting selective etching systems and methods
US10672642B2 (en) 2018-07-24 2020-06-02 Applied Materials, Inc. Systems and methods for pedestal configuration
US11049755B2 (en) * 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
KR102533089B1 (ko) * 2018-12-20 2023-05-17 에이에스엠엘 네델란즈 비.브이. 스테이지 장치
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US12300473B2 (en) 2019-03-08 2025-05-13 Applied Materials, Inc. Electrostatic chuck for high bias radio frequency (RF) power application in a plasma processing chamber
EP3977207A1 (en) * 2019-05-29 2022-04-06 ASML Holding N.V. Split double sided wafer and reticle clamps
US12189310B2 (en) 2019-12-31 2025-01-07 Asml Holding N.V. Systems and methods for manufacturing a double-sided electrostatic clamp
KR102701133B1 (ko) * 2020-03-06 2024-09-03 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
US11450546B2 (en) * 2020-04-09 2022-09-20 Applied Materials, Inc. Semiconductor substrate support with internal channels
TWD223375S (zh) * 2021-03-29 2023-02-01 大陸商北京北方華創微電子裝備有限公司 靜電卡盤
US20240412957A1 (en) * 2023-06-07 2024-12-12 Applied Materials, Inc. High temperature biasable heater with advanced far edge electrode, electrostatic chuck, and embedded ground electrode

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01152639A (ja) * 1987-12-10 1989-06-15 Canon Inc 吸着保持装置
JP2665242B2 (ja) * 1988-09-19 1997-10-22 東陶機器株式会社 静電チャック
DE69103915T2 (de) * 1990-01-25 1995-05-11 Applied Materials Inc Elektrostatische Klemmvorrichtung und Verfahren.
US5191506A (en) 1991-05-02 1993-03-02 International Business Machines Corporation Ceramic electrostatic chuck
JPH08172123A (ja) 1994-12-19 1996-07-02 Hitachi Ltd 静電吸着装置
JP3931357B2 (ja) 1995-10-18 2007-06-13 ソニー株式会社 半導体装置の製造方法
JP3814359B2 (ja) 1996-03-12 2006-08-30 キヤノン株式会社 Ｘ線投影露光装置及びデバイス製造方法
US5835334A (en) 1996-09-30 1998-11-10 Lam Research Variable high temperature chuck for high density plasma chemical vapor deposition
JP3323135B2 (ja) 1998-08-31 2002-09-09 京セラ株式会社 静電チャック
JP2000277595A (ja) 1999-03-25 2000-10-06 Ibiden Co Ltd 静電チャック
JP3831582B2 (ja) 2000-06-23 2006-10-11 三菱重工業株式会社 プラズマ処理装置の制御方法およびプラズマ処理装置
JP2002231799A (ja) * 2001-02-06 2002-08-16 Toto Ltd 静電チャック、静電チャックの吸着表面に形成された凹部への放電防止方法、およびその静電チャックを用いた基板固定加熱冷却装置
JP3742349B2 (ja) * 2002-02-15 2006-02-01 株式会社日立製作所 プラズマ処理装置
EP1359466A1 (en) * 2002-05-01 2003-11-05 ASML Netherlands B.V. Chuck, lithographic projection apparatus, method of manufacturing a chuck and device manufacturing method
JP4346877B2 (ja) * 2002-08-29 2009-10-21 東京エレクトロン株式会社 静電吸着装置および処理装置
US7105836B2 (en) * 2002-10-18 2006-09-12 Asml Holding N.V. Method and apparatus for cooling a reticle during lithographic exposure
JP2004158751A (ja) 2002-11-08 2004-06-03 Matsushita Electric Ind Co Ltd プラズマ処理装置
KR20040070008A (ko) 2003-01-29 2004-08-06 쿄세라 코포레이션 정전척
US7088431B2 (en) * 2003-12-17 2006-08-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7141763B2 (en) * 2004-03-26 2006-11-28 Tokyo Electron Limited Method and apparatus for rapid temperature change and control
US20070195482A1 (en) 2006-02-23 2007-08-23 Varian Semiconductor Equipment Associates, Inc. Johnsen-Rahbek electrostatic chuck driven with AC voltage
JP5183058B2 (ja) 2006-07-20 2013-04-17 アプライド マテリアルズ インコーポレイテッド 急速温度勾配コントロールによる基板処理
US9275887B2 (en) * 2006-07-20 2016-03-01 Applied Materials, Inc. Substrate processing with rapid temperature gradient control
JP4418032B2 (ja) 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
JP2009152475A (ja) 2007-12-21 2009-07-09 Shinko Electric Ind Co Ltd 基板温調固定装置
NL1036460A1 (nl) * 2008-02-20 2009-08-24 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP5519992B2 (ja) 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
US8593779B2 (en) 2010-01-05 2013-11-26 Nikon Corporation Hybrid electrostatic chuck

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