JP2014523636A - 基板凍結乾燥装置及び方法 - Google Patents

基板凍結乾燥装置及び方法 Download PDF

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Publication number
JP2014523636A
JP2014523636A JP2014513642A JP2014513642A JP2014523636A JP 2014523636 A JP2014523636 A JP 2014523636A JP 2014513642 A JP2014513642 A JP 2014513642A JP 2014513642 A JP2014513642 A JP 2014513642A JP 2014523636 A JP2014523636 A JP 2014523636A
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chamber
substrate
electrostatic chuck
dry chemical
temperature
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Japanese (ja)
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JP2014523636A5 (https=
Inventor
シラド・ステファン・エム．
ハイムズ・ダイアン
シェップ・アラン・エム．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H10P72/0408—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

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  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2014513642A 2011-05-31 2012-05-29 基板凍結乾燥装置及び方法 Withdrawn JP2014523636A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161491727P 2011-05-31 2011-05-31
US61/491,727 2011-05-31
US13/273,090 US9673037B2 (en) 2011-05-31 2011-10-13 Substrate freeze dry apparatus and method
US13/273,090 2011-10-13
PCT/US2012/039855 WO2012166727A2 (en) 2011-05-31 2012-05-29 Substrate freeze dry apparatus and method

Publications (2)

Publication Number Publication Date
JP2014523636A true JP2014523636A (ja) 2014-09-11
JP2014523636A5 JP2014523636A5 (https=) 2015-07-09

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JP2014513642A Withdrawn JP2014523636A (ja) 2011-05-31 2012-05-29 基板凍結乾燥装置及び方法

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Country Link
US (1) US9673037B2 (https=)
JP (1) JP2014523636A (https=)
CN (1) CN103650116B (https=)
TW (1) TWI571948B (https=)
WO (1) WO2012166727A2 (https=)

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JP2013201302A (ja) * 2012-03-26 2013-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2016025233A (ja) * 2014-07-22 2016-02-08 株式会社東芝 基板処理装置、及び基板処理方法
JP2018107426A (ja) * 2016-12-26 2018-07-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2019062004A (ja) * 2017-09-25 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理液及び基板処理装置
WO2020218351A1 (ja) * 2019-04-25 2020-10-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、半導体製造方法、および、基板処理装置
JP2022546328A (ja) * 2019-08-21 2022-11-04 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面処理組成物及び表面処理方法
JP2024044802A (ja) * 2022-09-21 2024-04-02 キオクシア株式会社 基板処理方法および基板処理装置

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JP5622675B2 (ja) * 2011-07-05 2014-11-12 株式会社東芝 基板処理方法及び基板処理装置
US10069443B2 (en) * 2011-12-20 2018-09-04 Tokyo Electron Limited Dechuck control method and plasma processing apparatus
US11713924B2 (en) 2012-02-01 2023-08-01 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US12281847B2 (en) 2020-04-21 2025-04-22 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
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US10876792B2 (en) 2012-02-01 2020-12-29 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US10690413B2 (en) 2012-02-01 2020-06-23 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US9970708B2 (en) 2012-02-01 2018-05-15 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
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US12276454B2 (en) 2020-04-21 2025-04-15 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US12215925B2 (en) 2020-04-21 2025-02-04 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US8898928B2 (en) * 2012-10-11 2014-12-02 Lam Research Corporation Delamination drying apparatus and method
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JP6259299B2 (ja) * 2014-01-30 2018-01-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US10192751B2 (en) * 2015-10-15 2019-01-29 Lam Research Corporation Systems and methods for ultrahigh selective nitride etch
WO2017075554A1 (en) * 2015-10-29 2017-05-04 Golfetto Michael Methods freeze drying and composite materials
CN105467682A (zh) * 2016-01-15 2016-04-06 京东方科技集团股份有限公司 膜层结构、其制作方法、显示基板、背光源及显示装置
KR102008566B1 (ko) * 2016-05-24 2019-08-07 가부시키가이샤 스크린 홀딩스 기판 처리 장치 및 기판 처리 방법
EP3340280A1 (en) * 2016-12-26 2018-06-27 SCREEN Holdings Co., Ltd. Substrate treating apparatus and substrate treating method
JP6887253B2 (ja) 2017-01-06 2021-06-16 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法及び基板処理装置
CN108807670B (zh) * 2017-05-03 2020-04-28 京东方科技集团股份有限公司 一种薄膜的制备方法、阵列基板的制备方法及显示面板
JP7010629B2 (ja) * 2017-08-31 2022-01-26 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
JP6966899B2 (ja) * 2017-08-31 2021-11-17 株式会社Ｓｃｒｅｅｎホールディングス 基板乾燥方法および基板処理装置
US11302525B2 (en) * 2017-09-22 2022-04-12 SCREEN Holdings Co., Ltd. Substrate processing method and substrate processing apparatus
US11149345B2 (en) * 2017-12-11 2021-10-19 Applied Materials, Inc. Cryogenically cooled rotatable electrostatic chuck
US10957530B2 (en) 2017-12-19 2021-03-23 Micron Technology, Inc. Freezing a sacrificial material in forming a semiconductor
US10811267B2 (en) * 2017-12-21 2020-10-20 Micron Technology, Inc. Methods of processing semiconductor device structures and related systems
US10497559B2 (en) * 2018-03-28 2019-12-03 Taiwan Semiconductor Manufacturing Company Ltd. Method for dehydrating semiconductor structure and dehydrating method of the same
JP7336306B2 (ja) * 2018-10-23 2023-08-31 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
US12510296B2 (en) 2020-04-21 2025-12-30 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US12584689B2 (en) 2020-04-21 2026-03-24 Revive Electronics, LLC Methods and apparatuses for drying electronic devices
US11871667B2 (en) 2020-09-17 2024-01-09 Applied Materials, Inc. Methods and apparatus for warpage correction
CN113758157A (zh) * 2021-08-02 2021-12-07 南京研沃生物科技有限公司 一种微波真空冷冻干燥机及其介质分离处理方法
US11859153B2 (en) 2021-11-08 2024-01-02 Changxin Memory Technologies, Inc. Method for cleaning substrate and system for cleaning substrate
CN116092915B (zh) * 2021-11-08 2025-08-15 长鑫存储技术有限公司 一种衬底的清洁方法以及用于清洁衬底的系统

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Cited By (12)

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Publication number Priority date Publication date Assignee Title
JP2013201302A (ja) * 2012-03-26 2013-10-03 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2016025233A (ja) * 2014-07-22 2016-02-08 株式会社東芝 基板処理装置、及び基板処理方法
JP2018107426A (ja) * 2016-12-26 2018-07-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP7001423B2 (ja) 2016-12-26 2022-01-19 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置及び基板処理方法
JP2019062004A (ja) * 2017-09-25 2019-04-18 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理液及び基板処理装置
US11094565B2 (en) 2017-09-25 2021-08-17 SCREEN Holdings Co., Ltd. Substrate treating method, substrate treating liquid and substrate treating apparatus
WO2020218351A1 (ja) * 2019-04-25 2020-10-29 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、半導体製造方法、および、基板処理装置
JP2020181892A (ja) * 2019-04-25 2020-11-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、半導体製造方法、および、基板処理装置
JP7233294B2 (ja) 2019-04-25 2023-03-06 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、半導体製造方法、および、基板処理装置
JP2022546328A (ja) * 2019-08-21 2022-11-04 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 表面処理組成物及び表面処理方法
JP2024044802A (ja) * 2022-09-21 2024-04-02 キオクシア株式会社 基板処理方法および基板処理装置
JP7801196B2 (ja) 2022-09-21 2026-01-16 キオクシア株式会社 基板処理方法および基板処理装置

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