JPS649624A - Method of drying semiconductor device - Google Patents

Method of drying semiconductor device

Info

Publication number
JPS649624A
JPS649624A JP16583387A JP16583387A JPS649624A JP S649624 A JPS649624 A JP S649624A JP 16583387 A JP16583387 A JP 16583387A JP 16583387 A JP16583387 A JP 16583387A JP S649624 A JPS649624 A JP S649624A
Authority
JP
Japan
Prior art keywords
water
semiconductor device
liquid
droplets
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16583387A
Other languages
Japanese (ja)
Inventor
Koichiro Hori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16583387A priority Critical patent/JPS649624A/en
Publication of JPS649624A publication Critical patent/JPS649624A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To make it possible to dry quickly without enriching and concentrating impurities in liquid and in the surface of a semiconductor device to a concentration which poses problems in manufacturing and operation of the semiconductor device, by replacing water droplets, which are attached to the semiconductor device after washing with water, by liquid whose vapor pressure is higher than water, and freezing and drying the droplets in vacuum. CONSTITUTION:A semiconductor device 11 after washing with water is placed beneath nozzles 14. Liquid, e.g., 2-propanol or acetone, whose compatibility with water is high and vapor pressure is higher than that of water, is atomized through the nozzles 14. Water droplets, which are attached to the semiconductor device 11, are replaced. The semiconductor device 21, to which the droplets of the substituted liquid are attached, is moved to a stage 22 and cooled. Thus the attached liquid droplets are frozen. Then, a valve 27 is opend, and a gas in a chamber 23 is exhausted through an exhaust port 25. The inside is made to be a vacuum state, and the semiconductor device 21 is dried. At this time, the frozen liquid droplets are sublimated like the liquid droplets 4a-4c. Therefore, the impurities in the attached liquid are sublimated or remain at planar positions like arrows 5a-5c. The impurities are not enriched and concentrated to a concentration, which poses problems in manufacturing and operation of the semiconductor device. Since the water is replaced by, e.g., 2-propanol or acetone, whose vapor pressure, is higher than that of water, the device can be dried 3-4 times faster than the case, in which water is frozen and dried.
JP16583387A 1987-07-02 1987-07-02 Method of drying semiconductor device Pending JPS649624A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16583387A JPS649624A (en) 1987-07-02 1987-07-02 Method of drying semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16583387A JPS649624A (en) 1987-07-02 1987-07-02 Method of drying semiconductor device

Publications (1)

Publication Number Publication Date
JPS649624A true JPS649624A (en) 1989-01-12

Family

ID=15819867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16583387A Pending JPS649624A (en) 1987-07-02 1987-07-02 Method of drying semiconductor device

Country Status (1)

Country Link
JP (1) JPS649624A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04174268A (en) * 1990-11-02 1992-06-22 Hitachi Nakaseiki Ltd Vacuum freezing drier
JPH0611874A (en) * 1993-03-17 1994-01-21 Canon Inc Electrophotographic image forming member
US5348615A (en) * 1992-10-21 1994-09-20 Advanced Micro Devices, Inc. Selective planarization method using regelation
JP2007165528A (en) * 2005-12-13 2007-06-28 Dainippon Screen Mfg Co Ltd Substrate processing device and substrate processing method
JP2014523636A (en) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション Substrate freeze-drying apparatus and method
WO2022230669A1 (en) * 2021-04-28 2022-11-03 株式会社Screenホールディングス Substrate processing method and substrate processing device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04174268A (en) * 1990-11-02 1992-06-22 Hitachi Nakaseiki Ltd Vacuum freezing drier
US5348615A (en) * 1992-10-21 1994-09-20 Advanced Micro Devices, Inc. Selective planarization method using regelation
JPH0611874A (en) * 1993-03-17 1994-01-21 Canon Inc Electrophotographic image forming member
JP2007165528A (en) * 2005-12-13 2007-06-28 Dainippon Screen Mfg Co Ltd Substrate processing device and substrate processing method
JP2014523636A (en) * 2011-05-31 2014-09-11 ラム リサーチ コーポレーション Substrate freeze-drying apparatus and method
WO2022230669A1 (en) * 2021-04-28 2022-11-03 株式会社Screenホールディングス Substrate processing method and substrate processing device

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